Untitled
Abstract: No abstract text available
Text: D!" 13 bit absolute encoder chip 0.45 mm EEEEEEEEEEEEEEEECFCA93298C OIT18C consists in a silicon phototransistor’s monolithic array of 13 elements. The phototransistors have a common collector, every emitter is available as a pad. The pitch of the silicon
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OIT18C
300-900nm.
030mm
12234556667832897A8B5C
OIT18C
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DEP 20203-Y
Abstract: No abstract text available
Text: !C 2-Axis +/-30deg Tilt Sensor EEEEEEEEEEEEEEEECFCA93298C Optoi OIAC2 is an absolute inclinometer, based on MEMS micro electro mechanical systems technology 3-Axis accelerometer. The device is able to sense tilt angles over ±30 degrees range in the pitch and roll axis.
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/-30deg
123553A69638
123553A6969B
12234556667832897A8B5C
DEP 20203-Y
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Untitled
Abstract: No abstract text available
Text: ! TO-18 Metal-Glass Packaged IR LED EEEEEEEEEEEEEEEECFCA93298C High quality GaAlAs IR LED with high intensity parallel beam of light. Special glass lens allows parallel beam with a medium divergence of ±5°. The metal can covered with glass lens guarantees the
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OIL10S04
12234556667832897A8B5C
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Untitled
Abstract: No abstract text available
Text: !" Precision Optical Reflective Sensor EEEEEEEEEEEEEEEECFCA93298C The OIER8 is a fully integrated module, designed for applications requiring an optical reflective sensor, especially for barcode reader. The device contains a 650nm visible LED as emitter and
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650nm
234567891A
12234556667832897A8B5C
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Encoders incremental
Abstract: No abstract text available
Text: D!" incremental encoder chip 6ch 0.45 mm EEEEEEEEEEEEEEEECFCA93298C OIT10C consists in a silicon phototransistor’s 6 channels monolithic array. The phototransistors have a common collector, every emitter is available as a pad. The pitch of the silicon
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OIT10C
300-900nm.
030mm
12234556667832897A8B5C
OIT10C
Encoders incremental
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Untitled
Abstract: No abstract text available
Text: 1 D1 OttoXLight FBG Sensor Interrogation system C C C EEEEEEEEEEEEEEEECFCA93298C C C OIMI1 is a new ultra-compact Fiber Bragg Grating sensor interrogation system, recently developed by CELM snc with the support of Optoi Group. System interfacing and data storage on the host computer
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2000sps,
F3000
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Untitled
Abstract: No abstract text available
Text: D!" incremental encoder chip 0.45 mm EEEEEEEEEEEEEEEECFCA93298C OIT15C consists in a silicon phototransistor’s monolithic array. The phototransistors have a common collector, every emitter is available as a pad. The pitch of the silicon arrays is 0.45 mm, while the component electrical pitch
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OIT15C
300-900nm.
030mm
12234556667832897A8B5C
OIT15C
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Untitled
Abstract: No abstract text available
Text: !" MONOLITHIC 9 NPN PHOTRANSISTOR ARRAY EEEEEEEEEEEEEEEECFCA93298C OIT26 consists in a silicon phototransistor’s monolithic array. The phototransistors have a common collector, every emitter is available as a pad. The pitch of the silicon arrays is 0.6 mm, while the component electrical pitch is
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OIT26
300-900nm.
030mm
12234556667832897A8B5C
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Untitled
Abstract: No abstract text available
Text: !"# 6 bit encoder chip 0.6 mm EEEEEEEEEEEEEEEECFCA93298C OIT24C consists in a silicon phototransistor’s monolithic array. The phototransistors have a common collector, every emitter is available as a pad. The pitch of the silicon arrays is 0.6 mm, while the component electrical pitch is
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OIT24C
300-900nm.
030mm
12234556667832897A8B5C
OIT24C
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Untitled
Abstract: No abstract text available
Text: !"# 2-Axis ±60deg Tilt Sensor Can Open Interface 1-Axis 360deg Tilt Sensor Can Open Interface EEEEEEEEEEEEEEEECFCA93298C Optoi OIAC3-X is a 1D or 2D inclination sensor, based on MEMS Micro Electro Mechanical Systems technology. The device is able to sense tilt angles very
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60deg
360deg
30deg
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Untitled
Abstract: No abstract text available
Text: D!"#$ incremental encoder chip 0.45 mm EEEEEEEEEEEEEEEECFCA93298C OIT12C consists in a silicon phototransistor’s monolithic array. The phototransistors have a common collector, every emitter is available as a pad. The pitch of the silicon arrays is 0.45 mm, while the component electrical pitch
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OIT12C
300-900nm.
030mm
12234556667832897A8B5C
OIT12C-X
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isfet ph SENSOR
Abstract: ISFET OIB40S01
Text: CCCCCCCCCCCCCCCCCC D ISFET SENSOR for pH measurement EEEEEEEEEEEEEEEECFCA93298C C The OII1 sensor consists of one silicon ISFET chip for pH measurement. The sensor makes use of the potentiometric measurement method. The potential difference developed in solution
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12234556667832897A8B5C
isfet ph SENSOR
ISFET
OIB40S01
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Untitled
Abstract: No abstract text available
Text: !" absolute/incremental encoder chip 0.6 mm EEEEEEEEEEEEEEEECFCA93298C OIT6C consists in monolithic arrays. two silicon phototransistor’s The phototransistors have a common collector, every emitter is available as a pad. The pitch of the silicon
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300-900nm.
030mm
12234556667832897A8B5C
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Untitled
Abstract: No abstract text available
Text: !" Reflective sensor EEEEEEEEEEEEEEEECFCA93298C The OIER3 reflective sensor consists in an infrared emitting diode and a double NPN silicon phototransistor. The components together are mounted side by side in a plastic black SMD housing. The black package avoids
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Untitled
Abstract: No abstract text available
Text: !" incremental encoder chip 9ch 0.45 mm EEEEEEEEEEEEEEEECFCA93298C OIT5C consists in a silicon phototransistor’s 9 channels monolithic array. The phototransistors have a common collector and every emitter is available as a pad. The pitch of the silicon
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300-900nm.
030mm
12234556667832897A8B5C
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Untitled
Abstract: No abstract text available
Text: !D monolithic 13 NPN phototransistor array EEEEEEEEEEEEEEEECFCA93298C Optical device consisting of a monolithic 13 silicon NPN phototransistor array chip with high gain uniformity for the output signals. The active area of each phototransistor is 0.2 x 0.45
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13-bits
030mm
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Untitled
Abstract: No abstract text available
Text: D Optoi-Bee Z-master EEEEEEEEEEEEEEEECFCA93298C Optoi-Bee Z-master consists in a 802.15.4 standard compliant 2.4GHz transmitter unit z-node OIS7 plus a master board (OIS8 or OIS12). The items together form a coordinator, which allows to build and supervise a
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OIS12)
OIS10-USB
RS485.
12234556667832897A8B5C
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Untitled
Abstract: No abstract text available
Text: ! TO-18 Metal-Glass Packaged IR LED EEEEEEEEEEEEEEEECFCA93298C High quality GaAlAs IR LED with high intensity parallel beam of light. Special glass lens allows parallel beam with a medium divergence of ±20°. The metal can covered with glass lens guarantees the
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OIL10S20
12234556667832897A8B5C
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Untitled
Abstract: No abstract text available
Text: !" Digital 660nm Transceiver for Industrial Fast Ethernet EEEEEEEEEEEEEEEECFCA93298C The OIER6 transceiver, lead free and RoHs compliant, allows to implement Fast Ethernet 100 Mbps or Ethernet (10 Mbps) over more than 50 meters POF fiber 0.5
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660nm
12234556667832897A8B5C
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Untitled
Abstract: No abstract text available
Text: !"#$ Optoi-Bee Z-slave LTH EEEEEEEEEEEEEEEECFCA93298C Optoi Z-slave LTH consists in a 802.15.4 standard compliant 2.4GHz transmitter unit z-node OIS7 plus a sensor board (sensor node OIS6 with Luminosity, Temperature and Humidity parameters), which is
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OIS10-USB
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Untitled
Abstract: No abstract text available
Text: !" incremental encoder chip 0.6 mm EEEEEEEEEEEEEEEECFCA93298C OIT8C consists monolithic array. in two silicon phototransistor’s The phototransistors have a common collector, every emitter is available as a pad. The pitch of the silicon arrays is 0.6 mm, while the component electrical pitch is
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300-900nm.
030mm
12234556667832897A8B5C
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Untitled
Abstract: No abstract text available
Text: !"#$ incremental encoder chip 0.6 mm EEEEEEEEEEEEEEEECFCA93298C OIT2C-X consists monolithic array. in a silicon phototransistor’s The phototransistors have a common collector, every emitter is available as a pad. The pitch of the silicon arrays is 0.6 mm, while the component electrical pitch is
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300-900nm.
030mm
12234556667832897A8B5C
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Untitled
Abstract: No abstract text available
Text: Optical Receiver with TTL Output EEEEEEEEEEEEEEEECFCA93298C New optical receiver based on a photoASIC device made by a CMOS microelectronic silicon photodiode with integrated electronics for standard TTL digital output. The photoASIC has been developed with high resolution
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100nF
030mm
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Untitled
Abstract: No abstract text available
Text: !" incremental encoder chip 1.2 mm EEEEEEEEEEEEEEEECFCA93298C OIT3C consists in three unique silicon phototransistors. They have a common collector and every emitter is available on a pad. The pitch of the silicon arrays is 1.2 mm, while the component electrical pitch is 1.27 mm.
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300-900nm.
030mm
12234556667832897A8B5C
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