125-406 TRANSISTOR Search Results

125-406 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

125-406 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: 0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55ST FET Common Gate GENERAL DESCRIPTION The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of	Original	0405SC-1000M 0405SC-1000M 1000Watts, 150mA 300uS,	PDF
J294 Abstract: SIT Static Induction Transistor sit transistor Static Induction Transistor SIT electrolytic capacitor, .1uF 2.t transistor j294 "Static Induction Transistor" transistor sit "silicon carbide" FET transistor 1000W Text: 0405SC-1000M Rev F 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55ST FET Common Gate The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON CARBIDE STATIC INDUCTION TRANSISTOR (SIT) capable of	Original	0405SC-1000M 0405SC-1000M 1000Watts, 150mA 300uS, J294 SIT Static Induction Transistor sit transistor Static Induction Transistor SIT electrolytic capacitor, .1uF 2.t transistor j294 "Static Induction Transistor" transistor sit "silicon carbide" FET transistor 1000W	PDF
Untitled Abstract: No abstract text available Text: 0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55TW-FET Common Gate GENERAL DESCRIPTION The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION	Original	0405SC-2200M 0405SC-2200M 2200Watts, 55TW-FET 120mA	PDF
static induction transistor SIT Abstract: "silicon carbide" FET 1000uf electrolytic capacitor SIT Static Induction Transistor transistor 406 specification sit transistor 0405SC-1000M "Static Induction Transistor" x2404 1000UF 20V CAPACITOR Text: 0405SC-1000M Rev C 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET Common Gate 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON	Original	0405SC-1000M 0405SC-1000M 1000Watts, static induction transistor SIT "silicon carbide" FET 1000uf electrolytic capacitor SIT Static Induction Transistor transistor 406 specification sit transistor "Static Induction Transistor" x2404 1000UF 20V CAPACITOR	PDF
electrolytic capacitor, .1uF Abstract: electrolytic capacitor, 1uF SIT Static Induction Transistor capacitor 330pF ATC "silicon carbide" FET CHIP transistor 348 Static Induction Transistor SIT "Static Induction Transistor" 425-450MHz static induction transistor Text: 0405SC-2200M Rev A1 0405SC-2200M 2200Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55TW-FET Common Gate The 0405SC-2200M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION	Original	0405SC-2200M 0405SC-2200M 2200Watts, 55TW-FET 120mA electrolytic capacitor, .1uF electrolytic capacitor, 1uF SIT Static Induction Transistor capacitor 330pF ATC "silicon carbide" FET CHIP transistor 348 Static Induction Transistor SIT "Static Induction Transistor" 425-450MHz static induction transistor	PDF
Untitled Abstract: No abstract text available Text: 0405SC-1500M Rev B 0405SC-1500M 1500Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION CASE OUTLINE 55ST FET Common Gate GENERAL DESCRIPTION The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION	Original	0405SC-1500M 0405SC-1500M 1500Watts, 125mA	PDF
j130 fet Abstract: 33 J 250 capacitor transistor 1000W 1000uf electrolytic capacitor silicon carbide xl33 transistor 406 specification Text: 0405SC-1000M Rev B 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET Common Gate 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON	Original	0405SC-1000M 0405SC-1000M 1000Watts, j130 fet 33 J 250 capacitor transistor 1000W 1000uf electrolytic capacitor silicon carbide xl33 transistor 406 specification	PDF
SIT Static Induction Transistor Abstract: transistor 406 specification Static Induction Transistor SIT transistor sit "silicon carbide" FET static induction transistor "static induction transistor" sit transistor electrolytic capacitor, .1uF 0405SC-1500M Text: 0405SC-1500M Rev B 0405SC-1500M 1500Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55ST FET Common Gate The 0405SC-1500M is a Common Gate N-Channel DEPLETION MODE Class AB SILICON CARBIDE (SiC) STATIC INDUCTION	Original	0405SC-1500M 0405SC-1500M 1500Watts, 125mA SIT Static Induction Transistor transistor 406 specification Static Induction Transistor SIT transistor sit "silicon carbide" FET static induction transistor "static induction transistor" sit transistor electrolytic capacitor, .1uF	PDF
1000uf electrolytic capacitor Abstract: capacitor 60 pF silicon carbide 33 J 250 capacitor Static Induction Transistor SIT "Static Induction Transistor" transistor 406 specification j130 fet Text: 0405SC-1000M Rev A 0405SC-1000M 1000Watts, 125 Volts, Class AB 406 to 450 MHz Silicon Carbide SIT PRELIMINARY SPECIFICATION GENERAL DESCRIPTION CASE OUTLINE 55KT FET Common Gate 1 = Drain 2 = Gate 3 = Source The 0405SC-1000M is a Common Gate N-Channel Class AB SILICON	Original	0405SC-1000M 0405SC-1000M 1000Watts, 1000uf electrolytic capacitor capacitor 60 pF silicon carbide 33 J 250 capacitor Static Induction Transistor SIT "Static Induction Transistor" transistor 406 specification j130 fet	PDF
in 3003 TRANSISTOR Abstract: Transistor equivalents 8059-2G7 8059-2g9 8059-2G10 8059-2G5 8059-2G2 TRANSISTOR CATALOGUE 2G7 datasheet 2G7 socket Text: Data downloaded from http://www.anglia.com - the website of Anglia - tel: 01945 474747 Catalogue 1654741 Specialty Sockets Revised 1-04 Transistor & IC Low Profile Sockets 8059 Series 8059-2G7 FEATURES: PERFORMANCE SPECIFICATIONS: The 8059 Series TO-5 transistor sockets are manufactured with a beryllium	Original	8059-2G7 8059-2G4 8059-2G5 8059-4G4 8059-2G3 8059-2G6 8059-2G8 8059-2G9 8059-2G10 in 3003 TRANSISTOR Transistor equivalents 8059-2G7 8059-2g9 8059-2G10 8059-2G5 8059-2G2 TRANSISTOR CATALOGUE 2G7 datasheet 2G7 socket	PDF
8059-2G7 Abstract: s8059 dc 1692 in 3003 TRANSISTOR 8059 8059-2G4 transistor 115 To5 transistor 8059-2g9 8059-2G2 Text: 8059 Series Transistor & IC Low Profile Sockets 8059-2G7 FEATURES: PERFORMANCE SPECIFICATIONS: The 8059 Series TO-5 transistor sockets are manufactured with a beryllium copper precision four fingered inner contact and brass outer sleeve. Insulators are molded in five brilliant polyamide colors, for rapid visual	Original	8059-2G7 8059-2G4 8059-2G5 8059-2G2 8059-4G4 8059-2G3 8059-2G6 8059-2G8 8059-2G9 8059-2G7 s8059 dc 1692 in 3003 TRANSISTOR 8059 8059-2G4 transistor 115 To5 transistor 8059-2g9 8059-2G2	PDF
D4067 Abstract: No abstract text available Text: CD4067B, CD4097B Types CMOS Analog Multiplexers/Demultiplexers High-Voltage Types 2 0 -V o lt Rating Features: C D 406 7B — Single 16-Channel M u ltip lexe r/D e m u ltip lexer C D 409 7B — D ifferential 8-Channel M u ltip lexe r/D e m u ltip lexer • Low O N resistance: 125 i i (ty p .) over 15	OCR Scan	CD4067B, CD4097B 16-Channel 92CM-3309? D4067	PDF
1N5411 Abstract: npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756 Text: for HF-VHF-UHF-Microwave Applications RF Power Transistors R C A R F Power Transistors for 12.5 Volt Operation Hermetic Ceramic-Metal Stripline Package Flange TYPICAL OUTPUT POWER — WATTS 'j Hermetic Ceramic-Metal Coaxial Package (Large) Hermetic Ceramic-Metal	OCR Scan	CON-46 O-104 14-Lead 16-Lead 12-Lead 16-Lead O-220AB 1N5411 npn transistor RCA 467 CD4004T CA3051 CD4001D 40468A RCA 40822 40664 SCR rca 40583 2N5756	PDF
lg crt tv circuit diagram Abstract: lg crt tv diagram LG crt TV flyback transformer LG TV flyback transformer BU326A BU326 BU406 Transformer eht ctv eht transformer SGS-Thomson bu326 Text: - , la SGS-THOMSON M œ m iO T is K S BU326 BÜ326A . HIGH VOLTAGE POWER SWITCH ESCRIPTION te BU326 and BU326A are silicon muitiepitaxial ssa NPN transistors in Jedec TO-3 meta! case irticularly intended for switch-mode CTV supply ••stem. -.BSOLUTE MAXIMUM RATINGS	OCR Scan	BU326 BU326A BU326 BU326-BU326A 25x4x2 19x15x5 330il lg crt tv circuit diagram lg crt tv diagram LG crt TV flyback transformer LG TV flyback transformer BU406 Transformer eht ctv eht transformer SGS-Thomson bu326	PDF

IRF 850 Abstract: mje13005-1 transistors bu 407 13005 A 13005 ballast IRF 426 IRFP 450 application 13007 applications SGSP364 IRF 810 Text: L^mg SGS-THOMSON A / f MMiLKgWMtSS consum er TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION v CBO 'c v CEO T yp e N P N Package ptot hFE @ V (A) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400	OCR Scan		PDF
IRFP 740 Abstract: IRF 810 IRF 426 irf transistors irfp 730 BUZ 82 Diodes BUZ C 840 irf 840 Diodes BUZ 840 BU 102 Text: L^mg SGS-THOMSON consumer A / f M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6	OCR Scan	MTP3N60 MTH6N60 MTP6N60 IRFP 740 IRF 810 IRF 426 irf transistors irfp 730 BUZ 82 Diodes BUZ C 840 irf 840 Diodes BUZ 840 BU 102	PDF
darlington NPN 1000V 8a transistor Abstract: NPN Transistor 600V TO-220 darlington NPN 600V 8a transistor transistor BU 104 darlington NPN 600V 8a transistor ESM 16 pnp transistor 800v transistor 406 specification transistor BU 109 transistor buv 90 Text: SUPERSWITCH high power transistor M U 86 selector guide guide de sélection transistors grande puissance MU 86 SUPERSWITCH power transistor and darlington for TV applications selector guide guide de sélection transistors de puissance et darlingtons pour applications TV	OCR Scan	130CIV 109DP O-220 104DP CB-244 CB-285 darlington NPN 1000V 8a transistor NPN Transistor 600V TO-220 darlington NPN 600V 8a transistor transistor BU 104 darlington NPN 600V 8a transistor ESM 16 pnp transistor 800v transistor 406 specification transistor BU 109 transistor buv 90	PDF
pnp transistor 1000v Abstract: transistor buv 90 bux diode darlington NPN 1000V transistor pnp transistor 600V transistor ESM 30 buv PNP transistor BU 104 NPN Transistor VCEO 1000V transistor BUX 48 Text: SUPERSWITCH transistor TOP-3 selector guide guide de sélection transistors TOP-3 SUPERSWITCH \ V C E O sus \ v CEX THOMSON-CSF 60V 80V 90V 125 V 150V 400V 450V 120V 160V 180V 250V 200V 850V 1000V Case fC (sat) 40 A BU W 4ff 30 A BU W 49 20 A BUX 69 IS A	OCR Scan	BUV48 BUV47 CB-244 CB-285 pnp transistor 1000v transistor buv 90 bux diode darlington NPN 1000V transistor pnp transistor 600V transistor ESM 30 buv PNP transistor BU 104 NPN Transistor VCEO 1000V transistor BUX 48	PDF
transistor buv 90 Abstract: transistor ESM 3004 transistor ESM 16 transistor Buv 48 transistor ESM 30 transistor ESM 3000 transistor ESM transistor ESM 3001 transistor ESM 3006 transistor buv 46 C Text: SUPERSWITCH transistor T 0 -2 2 0 AB selector guide guide de sélection transistors TO-220 AB SUPERSWITCH \v c E O s u s \ VCEX 90V 120V 200V 400V 180V 240V 400V 850V Casa 'C(sat) 12 A 8 A 6 A BUV 26 BUV 27 BUV 28 2,5 A BUV 46 1 BUV 36 A w SUPERSWITCH power transistor TO-83 selector guide	OCR Scan	O-220 00V-600V 1000T 2060T CB-244 CB-285 transistor buv 90 transistor ESM 3004 transistor ESM 16 transistor Buv 48 transistor ESM 30 transistor ESM 3000 transistor ESM transistor ESM 3001 transistor ESM 3006 transistor buv 46 C	PDF
irfp 950 Abstract: tsd4m450v SGSP479 transistor BUZ45 SGSP369 BUZ74 STHV82 IRFP 740 IRF 950 SGSP239 Text: L^mg SGS-THOMSON A/f consumer M M iL K gW M tSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6	OCR Scan	SGS35MA050D1 TSD4M450V MTP3N60 MTP3N60FI MTH6N60FI MTP6N60 STHV82 STHV102 TSD5MG40V STHI07N50FI irfp 950 SGSP479 transistor BUZ45 SGSP369 BUZ74 IRFP 740 IRF 950 SGSP239	PDF
IRFP 740 Abstract: SGSP364 sgsp369 TSD4M250V IRF 810 IRFP150 SGS100MA010D1 TSD4M350V TSD4M351V 220 to 110 power Text: L^mg SGS-THOMSON A/f consumer MMiLKgWMtSS TV, MONITORS AND VCR CIRCUITS BIPOLAR POWER TRANSISTORS AND DARLINGTONS FOR MONOCHROME DEFLECTION 'c v CBO v CEO ptot A (V) (V) <W) 800 800 900 900 330 330 400 400 400 400 400 400 600 330 400 330 330 6 6 6 6 7 7	OCR Scan	IRF742FI IRF740 IRF740FI SGSP475 SGSP575 IRF350 IRFP350FI TSD4M350V IRF823 IRF823FI IRFP 740 SGSP364 sgsp369 TSD4M250V IRF 810 IRFP150 SGS100MA010D1 TSD4M351V 220 to 110 power	PDF
C 3311 transistor Abstract: NPN Transistor 5A 400V T-33-11 KSD5017 transistor BU408 samsung tv KSD5017 BU406 BU406H power TRANSISTOR 800V 5A Text: SAMSUNG S E M I C O N DUCTOR 14E INC D \| 7^4145 G0Q7bfla b NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSD5017 T-33-11 COLOR TV HORIZONTAL'OUTPUT APPLICATIONS T O 3P F High Collector-Base VWtage VCeo=1500V ABSOLUTE MAXIMUM RATINGS (Ta=25°C ) Characteristic	OCR Scan	KSD5017 G007baa -55-V150 T-33-11 BU406H BU408 G007bÃ BU406/406H/408 C 3311 transistor NPN Transistor 5A 400V T-33-11 KSD5017 transistor BU408 samsung tv KSD5017 BU406 BU406H power TRANSISTOR 800V 5A	PDF
transistor 373 Abstract: 8060 transistor Text: Catalog 1307612 J & IV IF * Specialty Sockets Revised 7-01 Transistor Sockets 8058 & 8060 Series 8060-1G11 8060-1G6 FEATURES: PERFORMANCE SPECIFICATIONS: The 8058/8060 family of teflon sockets, with beryllium copper contacts, offers many features which allow them to be utilized in the most severe	OCR Scan	8060-1G11 8060-1G6 MIL-S-83502/2 M1L-S-83502/5. transistor 373 8060 transistor	PDF
407D Abstract: BU 508D BU206 transistors bu 407 bu 1350 508D BU207 BU 526 BU326 BU208 Text: h teSAGriBB POWER TRANSISTORS Switching transistors for horizontal deflection and television switch-mode power supply Type VcBO V VcEO (V) lc (A) Ptot VcEsat (W ) (V) tf at lc (MS) (A) Case JEDEC BU 126 750 300 3,0 40 <5.0 <0.7 4.0 BU 204 BU 205 BU 206 1300	OCR Scan	BU207 O-220 O-218 407D BU 508D BU206 transistors bu 407 bu 1350 508D BU 526 BU326 BU208	PDF

125-406 TRANSISTOR Search Results

125-406 TRANSISTOR Result Highlights (5)

125-406 TRANSISTOR Datasheets Context Search

Untitled

J294

Untitled

static induction transistor SIT

electrolytic capacitor, .1uF

Untitled

j130 fet

SIT Static Induction Transistor

1000uf electrolytic capacitor

in 3003 TRANSISTOR

8059-2G7

D4067

1N5411

lg crt tv circuit diagram

IRF 850

IRFP 740

darlington NPN 1000V 8a transistor

pnp transistor 1000v

transistor buv 90

irfp 950

IRFP 740

C 3311 transistor

transistor 373

407D