128*64
Abstract: AZ 280 chip AZ 280 memory WF128K64-XG4WX5 AH45
Text: WF128K64-XG4WX5 128Kx64 5V FLASH MODULE PRELIMINARY* FEATURES • Access Times of 60, 70, 90, 120, 150ns ■ Commercial, Industrial and Military Temperature Ranges ■ Packaging ■ 5 Volt Programming; 5V ±10% Supply ■ Low Power CMOS, 8mA Standby Typical
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WF128K64-XG4WX5
128Kx64
150ns
16KBytes
WF128K64-XG4WX5
128K64
128*64
AZ 280 chip
AZ 280 memory
AH45
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128*64
Abstract: transistor GW 93 H GW 94 H
Text: EDI2KG464128V 4 Megabyte Synchronous Card Edge DIMM Advanced 128Kx64, 3.3V Synchronous Flow-Through Module Features • 128Kx64 Synchronous • Flow-Through Architecture • Clock Controlled Registered Bank Enables E1\, E2\, E3, E4\ • Clock Controlled Registered Address
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EDI2KG464128V
4x128Kx64,
4x128Kx64
EDI2KG64128VxxD
01581USA
EDI2KG464128V
128*64
transistor GW 93 H
GW 94 H
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TC5118160
Abstract: msm-561 TMS444000 msm561 M5M418165 M5M418160 tms44c256 TC5117405 HY514264 HY514260
Text: New Page 1 DRAM 1Meg 1Mx1 256Kx4 FPM FPM Fujitsu MB81C100 MB81C4256 Goldstar GM71C100 GM71C4256 Hitachi HM511000 HM514256 Hyundai HY531000 HY534256 Micron MT4C1024 MT4C4256 Mitsubishi M5M41000 M5M44256 Nec UPD421000 UPD424256 Oki MSM511000 MSM514256 Samsung alt KM41C1000 KM44C256
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256Kx4
MB81C100
MB81C4256
GM71C100
GM71C4256
HM511000
HM514256
HY531000
HY534256
MT4C1024
TC5118160
msm-561
TMS444000
msm561
M5M418165
M5M418160
tms44c256
TC5117405
HY514264
HY514260
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0X144
Abstract: No abstract text available
Text: 45 AM S/UNI ATLAS 3200 ATM Layer Solution ASSP Data Sheet Released y, 20 03 06 :2 8: PM7325 id ay ,0 7F eb ru ar S/UNI® ATLAS™ 3200 in er In co n Fr OC-48 S/UNI ATM Layer Solution Released Issue No. 5: January 2003 Do wn lo ad e d by Co nt en tT ea
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OC-48
PMC-1990553,
PM7325
0X144
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64Kx64
Abstract: ethernet chip switch KS8998 8-Port Fast Ethernet Switch memory bandwidth
Text: KS8998 – Octal 10/100 Switch with PHY Introduction Highlights The KS8998 is an unmanaged 8-port 10/100 Fast Ethernet integrated switch controller with 8 built-in 10/100 Fast Ethernet physical layer transceivers. It has 2.4 Gbps inter-chip expansion capability. Along
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KS8998
KS8998
512KB
64Kx64
ethernet chip switch
8-Port Fast Ethernet Switch
memory bandwidth
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SB61S128K64A-5
Abstract: No abstract text available
Text: SB61S128K64A Silicon-BasedTechnology Ultra High-Speed PBSRAM 128Kx 64 SYNCHRONOUS PIPELINED-BURST CMOS SRAM Preliminary FEATURES: •Single ■Synchronous pipelined-operation 3.3V -5% and +10% power supply ■Internally self-timed WRITE cycle clock access time:
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SB61S128K64A
75ns/133MHz
4ns/125MHz
5ns/100MHz
128-pin
SB61S128K64A
608-bit
usi5779832
Tel886-3-5777897
SB61S128K64A-5
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Untitled
Abstract: No abstract text available
Text: ADVANCE INFORMATION IDT7MBV4153 IDT7MBV4154 128K x 64 FLOW THRU ZBT SRAM 128K x 64 PIPELINE ZBT SRAM Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • Low profile 160-lead AMP Free Height Surface Mount Board-to-Board Connector family 5mm-8mm plug options
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IDT7MBV4153
IDT7MBV4154
160-lead
IDT7MBV4153/54
7MBV4153
7MBV4154
544-SRAM
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Untitled
Abstract: No abstract text available
Text: White Electronic Designs EDI2GG464128V-D 128Kx64 SYNCHRONOUS SRAM CARD EDGE DIMM, 3.3V DESCRIPTION FEATURES 128Kx64 Synchronous The EDI2KG64128VxxD is a Synchronous SRAM, 60 position Card Edge DIMM 120 contacts Module, organized as 128Kx64. The Module contains eight
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EDI2GG464128V-D
4x128Kx64
EDI2KG64128VxxD
4x128Kx64.
14mmx20mm
EDI2GG464128V95D*
4x128Kx64
EDI2GG464128V10D*
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LH Research
Abstract: GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
Text: EDI2AG27264V 1 Megabyte Sync/Sync Burst, Small Outline DIMM ADVANCED Advanced 2x64Kx72, 3.3V Sync/Sync Burst Flow-Through Module Features • 2x64Kx72 Synchronous, Synchronous Burst • Flow-Through Architecture • Linear Burst MODE • Clock Controlled Registered Bank
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EDI2AG27264V
2x64Kx72,
2x64Kx72
EDI2AG27264VxxD1
Module64Kx72
2x64Kx72
01581USA
EDI2AG27264V
LH Research
GW CSSRM1.PC-MFNQ-5C7E-1-700-R18
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EDI2GG464128V
Abstract: No abstract text available
Text: EDI2GG464128V 128Kx64 Synchronous SRAM CARD EDGE DIMM, 3.3V FEATURES • 128Kx64 Synchronous The EDI2GG464128VxxD is a Synchronous SRAM, 60 position Card Edge DIMM 120 contacts Module, organized as 128Kx64. The Module contains eight (8) Synchronous Burst Ram Devices,
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EDI2GG464128V
4x128Kx64
EDI2GG464128VxxD
4x128Kx64.
14mmx20mm
EDI2GG464128V95D*
EDI2GG464128V10D*
EDI2GG464128V11D
EDI2GG464128V12D
EDI2GG464128V
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Untitled
Abstract: No abstract text available
Text: EDI8F64128C ^ E D I 128KX64 SRAM Module ELECTRONIC D£StGN& NC.I 128KX64 Static RAM High Speed CMOS Cache Module Features 1 M Byte Secondary C ach e Module The EDI8F64128C is a high speed 1MByte secondary cache • For use with Intel Pentium Based System s
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EDI8F64128C
128KX64
EDI8F64128C
128Kx8
EDI8F64128C15MDC
EDI8F64128C20MDC
EDI8F64128C25MDC
01581USA
EDBF864128C
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zd 501
Abstract: D044 z DD54 TME 57 Z3A18 55ZJ
Text: ^ ED I EDI8F64128C ELECTRONIC D£StGN& NC.I 128KX64 SRAM Module 128KX64 Static RAM High Speed CMOS Cache Module Features 1MByte Secondary Cache Module The EDI8F64128C is a high speed 1MByte secondary cache • For use with Intel Pentium Based Systems module which is ideal for use with many Intel Pentium CPU-based
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EDI8F64128C
128Kx64
66MHz
CELP2X80CS3Z48
EDI8F64128C
EDI8F64128C20MDC
EDI8F64128C25MDC
01581USA
3S3D114
zd 501
D044 z
DD54
TME 57
Z3A18
55ZJ
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Untitled
Abstract: No abstract text available
Text: a WHITE /MICROELECTRONICS 128Kx64 5V FLASH MODULE WF128K64-XG4WX5 PRELIMINARY* FEATURES • A c ce ss Tim e s of 60, 70, 9 0 , 1 2 0 , 150ns ■ C o m m e rcial, Industrial and M i l i t a r y T e m p e ra tu r e Ranges ■ Packaging ■ 5 V o lt P rogram m ing; 5V ± 1 0 % Supply
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128Kx64
WF128K64-XG4WX5
150ns
128K64
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Untitled
Abstract: No abstract text available
Text: a M/HITE /MICROELECTRONICS 128Kx64 3.3V SRAM MODULE WS128K64V-XG4WX AD VAN CED * FEATURES • A c c e s s T im e s of 15, 17, 20, 25ns ■ 2V Data R etention D evices A v a ila b le Lo w Pow er V ersion ■ Packaging ■ T T L Com patible Inputs and Outputs
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128Kx64
WS128K64V-XG4WX
128K64V
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Untitled
Abstract: No abstract text available
Text: WH ITE /M IC R O E L E C T R O N IC S 128Kx64 3.3V SRAM MODULE W S128K64V-XG4W X ADVANCED* FEATURES • A c c e s s Tim es of 1 5 ,1 7 , 20, 25 n s ■ 2 V Data Retention D e vic e s A va ilab le Low Pow er Version ■ Packaging ■ TTL Com patible Inputs and O utputs
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S128K64V-XG4W
128Kx64
128Kx64,
256Kx32,
128K64V
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Untitled
Abstract: No abstract text available
Text: WF128K64-XG4WX 1/I/HITE /M IC R O E LE C TR O N IC S 128Kx64 5/12V FLASH MODULE ADVANCED* FEATURES • C o m m e rc ia l, In d u s tria l an d M ilit a r y T e m p e ra tu re R anges ■ A c c e s s T im e s of 150, 2 0 0 and 2 2 0 n S ■ 5 /1 2 V o lt P ro g ra m m in g ; 5V ± 1 0 % S u p p ly
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WF128K64-XG4WX
128Kx64
5/12V
AO-16
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Untitled
Abstract: No abstract text available
Text: WF128K64-XG4WX5 WHITE /MICROELECTRONICS □ 128Kx64 5V FLASH MODULE PRELIMINARY* FEATURES • A cce s s T im e s of 60, 70, 9 0 , 1 2 0 and 150nS C o m m e rcial, Industrial and M i I i t a r y T e m p e ra tu re Ranges ■ Packaging 5 V o lt Pro gra m m ing ; 5V ± 1 0 % Supply
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WF128K64-XG4WX5
128Kx64
128K64
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Untitled
Abstract: No abstract text available
Text: WHITE M I C R O E L E C T R O N I C S 128Kx64 5V FLASH MODULE WF128K64-XG4WX5 PRELIMINARY* FEATURES • Access Tim es o f 60, 70, 90, 1 2 0 ,1 50ns ■ C om m ercial, In d u stria l and M ilita ry T e m perature Ranges ■ Packaging ■ 5 V o lt Program m ing; 5V ±10% Supply
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WF128K64-XG4WX5
128Kx64
16KBytes
Erase/Pro07
F128K64-XG4W
128K64
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Untitled
Abstract: No abstract text available
Text: G2 WF128K64-XG4WX5 M/HITE /M IC R O E L E C T R O N IC S 128Kx64 5V FLASH MODULE PRELIMINARY* FEATURES • A c c e s s T im e s o f 6 0, 7 0, 9 0 ,1 2 0 a n d 150nS ■ C o m m e rc ia l, In d u s tria l and M ilit a r y T e m p e ra tu re R anges ■ P a cka ging
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WF128K64-XG4WX5
128Kx64
150nS
128K64
-55eC
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Untitled
Abstract: No abstract text available
Text: a WF128K64-XG4WX5 WHITE /MICROELECTRONICS 128Kx64 5V FLASH MODULE PRELIMINARY* FEATURES • A c ce ss Tim e s of 60, 70, 9 0 , 1 2 0 , 150ns ■ C o m m e rcial, Industrial and M i l i t a r y T e m p e ra tu r e Ranges ■ Packaging ■ 5 V o lt P rogram m ing; 5V + 1 0 % Supply
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WF128K64-XG4WX5
128Kx64
150ns
16KBytes
128K64
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Untitled
Abstract: No abstract text available
Text: 128K x 64 FLOW THRU ZBT SRAM 128K x 64 PIPELINE ZBT SRAM ADVANCE INFORMATION IDT7MB V41 53 IDT7MBV4154 FEATURES: DESCRIPTION: • Low profile 160-lead AMP Free Height Surface Mount Board-to-Board Connectorfam ily 5mm-8mm plug options • High speed - 50 MHz flow thru, 100 MHz pipeline
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IDT7MBV4154
160-lead
IDT7MBV4153/54
V4153
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Untitled
Abstract: No abstract text available
Text: Features • Organization Automatic and direct precharge Burst read, single write operation - 131,072 words x 64 bits x 2 banks • Fully synchronous Can assert random column address in every cycle - All signals referenced to positive edge of clock LVTTL compatible I/O
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128-pin
AS4LC256K64S0-133QC
256K64S0-100QC
AS4LC256K64S0
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CC1029
Abstract: No abstract text available
Text: ADVANCE INFORMATION IDT7MBV4153 IDT7MBV4154 128K x 64 FLOW THRU ZBT SRAM 128K x 64 PIPELINE ZBT SRAM lit e g is t e d D evize T echn oJogy, l i e . FEATURES: DESCRIPTION: • Low profile 160-lead AMP Free Height Surface Mount Board-to-Board Connectorfam ily 5mm-8mm plug options
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IDT7MBV4153
IDT7MBV4154
160-lead
IDT7MBV4153/54
7MBV4153
7MBV4154
544-SRAM
CC1029
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Untitled
Abstract: No abstract text available
Text: ^EDI ECH2AG27264V 1Megabyte Sync/Sync Burst, SmallOutline DIMM •ELECTRONIC DESISM5, INC ADVANCED 2x64Kx72, 3.3V Module Features Sync/Sync Burst Flow-Through • 2x64Kx72 Synchronous, Synchronous Burst The EDI2AG27264VxxD1 is a Synchronous/Synchro • Flow-Through Architecture
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ECH2AG27264V
2x64Kx72,
EDI2AG27264VxxD1
2x64Kx72.
JEDEC14mmx20mmTQFP
EDI22AG
264V85D1
EDI22AG27
264V9D1
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