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    abb press-pack igbt

    Abstract: 5slx12n4506
    Text: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4507 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1626-03 July 06 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide


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    12N4507 5SYA1626-03 sp4507 CH-5600 abb press-pack igbt 5slx12n4506 PDF

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    Abstract: No abstract text available
    Text: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4507 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1626-01 Sep 05 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide


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    12N4507 5SYA1626-01 r4507 CH-5600 PDF

    IGBT abb

    Abstract: abb press-pack igbt IGBT abb datasheets 5slx12n4506
    Text: VCE IC = = 4500 V 40 A IGBT-Die 5SMX 12N4507 Die size: 14.3 x 14.3 mm Doc. No. 5SYA1626-00 Aug.04 • • • • Low loss, rugged SPT technology Smooth switching for good EMC Emitter metallisation optimized for press-pack packaging Passivation: SIPOS and Silicon Nitride plus Polyimide


    Original
    12N4507 5SYA1626-00 speN4507 CH-5600 IGBT abb abb press-pack igbt IGBT abb datasheets 5slx12n4506 PDF