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    12A P TRANSISTOR SMD Search Results

    12A P TRANSISTOR SMD Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    12A P TRANSISTOR SMD Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SMD TRANSISTOR 12a

    Abstract: smd transistor marking p3 SMD TRANSISTOR MARKING P2 SMD TRANSISTOR MARKING ed smd transistor marking p1 MOSFET TRANSISTOR SMD MARKING A1 STTA1206G smd transistor marking Av 12A p transistor smd STTA1206D
    Text: STTA1206G  TURBOSWITCH  ”A”. ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS 12A VRRM 600V trr typ 28ns VF (max) 1.5V K A IF(AV) K FEATURES AND BENEFITS SPECIFIC TO ”FREEWHEEL MODE” OPERATIONS: Freewheel or Booster Diode. ULTRA-FAST RECOVERY.


    Original     		STTA1206G SMD TRANSISTOR 12a smd transistor marking p3 SMD TRANSISTOR MARKING P2 SMD TRANSISTOR MARKING ed smd transistor marking p1 MOSFET TRANSISTOR SMD MARKING A1 STTA1206G smd transistor marking Av 12A p transistor smd STTA1206D PDF

    ISL-706

    Abstract: 5962R11212 HS-26CLV32RH ISL706 IS1825 IC free Intersil HS-1840ARH
    Text: P WERING SPACE Payload and Bus Satellite Systems, Launch Vehicles P WERING SPACE Intersil's history and experience in the All Intersil SMD products are MIL-PRF-38535/ space and defense industries spans almost QML compliant and are 100% burned in. six decades beginning with the founding


    Original     		MIL-PRF-38535/ D-85737 1-888-INTERSIL BR-558 ISL-706 5962R11212 HS-26CLV32RH ISL706 IS1825 IC free Intersil HS-1840ARH PDF

    transistor c373

    Abstract: c380 transistor transistor c375 transistor c380 o transistor c380 AN-994 IRGBC30MD2-S SMD-220 C380 ge Tx/c380 transistor
    Text: PD - 9.1143 IRGBC30MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses


    Original     		IRGBC30MD2-S 10kHz) SMD-220 C-380 transistor c373 c380 transistor transistor c375 transistor c380 o transistor c380 AN-994 IRGBC30MD2-S SMD-220 C380 ge Tx/c380 transistor PDF

    transistor c373

    Abstract: c380 transistor transistor c375 transistor c380 transistor c380 o AN-994 IRGBC30MD2-S SMD-220 transistor c374 C374
    Text: Previous Datasheet Index Next Data Sheet PD - 9.1143 IRGBC30MD2-S INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT C Features VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses


    Original     		IRGBC30MD2-S 10kHz) SMD-220 C-380 transistor c373 c380 transistor transistor c375 transistor c380 transistor c380 o AN-994 IRGBC30MD2-S SMD-220 transistor c374 C374 PDF

    IRHN7450SE

    Abstract: No abstract text available
    Text: PD - 91313B IRHN7450SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD Ω , (SEE) RAD HARD HEXFET 500Volt, 0.51Ω International Rectifier’s (SEE) RAD HARD technology HEXFETs demonstrate immunity to SEE failure. Additionally, under identical pre- and post-irrradiation


    Original     		91313B IRHN7450SE 500Volt, Rectifi10) IRHN7450SE PDF

    imsc012

    Abstract: UC3842 led driver Triac 3a 600v smd MICROSTEP l298 IMSC004 pwm led driver uc3842 IMST425 IMST400 scr 600v 12a TO-220 IMSB404
    Text: AUTOMATION AND ROBOTICS RECOMMENDED PRODUCTS FROM SGS-THOMSON POWER SUPPLY Type L78xx L79xx L78Mxx LM317 LM317MDT LM323 LM337 LM338K LM350K L78Sxx L78Lxx LM723 L4940Vxx L4941 LFxx LExxA/C LK115Dxx LD1117xx L4931 TLL31 MC1403 POWER SUPPLY Cont’d Description


    Original     		L78xx L79xx L78Mxx LM317 LM317MDT LM323 LM337 LM338K LM350K L78Sxx imsc012 UC3842 led driver Triac 3a 600v smd MICROSTEP l298 IMSC004 pwm led driver uc3842 IMST425 IMST400 scr 600v 12a TO-220 IMSB404 PDF

    DCM12S0A0S12PFA

    Abstract: 4514v
    Text: DCM12S0A0S12PFA FEATURES Š Š Š Š Š Š Š Š Š Š Š Š Š Š Š Š Delphi DCM, Non-Isolated Point of Load DC/DC Power Modules: 4.5~14Vin, 0.69-5.5V/12Aout The Delphi Series DCM, 4.5-14V input, single output, non-isolated Point of Load DC/DC converters are the latest


    Original     		DCM12S0A0S12PFA 12Vin, V/12A DCM12S0A0S12PFA 4514v PDF

    Untitled

    Abstract: No abstract text available
    Text: DCM04S0A0S12PFA FEATURES               High efficiency: 95% @ 5.0Vin, 3.3V/12A out Small size and low profile: 20.3x 11.4x 8.5mm 0.8”x 0.45”x 0.33” Surface mount packaging Standard footprint Voltage and resistor-based trim


    Original     		DCM04S0A0S12PFA V/12A QS9000, OHSAS18001 V/12Aout x6220 DCM04S0A0S12PFA PDF

    FSYE13A0D

    Abstract: FSYE13A0D1 FSYE13A0D3 FSYE13A0R FSYE13A0R1 FSYE13A0R3 2E12 MIL-STD-750 a3 4741 5
    Text: FSYE13A0D, FSYE13A0R Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.


    Original     		FSYE13A0D, FSYE13A0R FSYE13A0D FSYE13A0D1 FSYE13A0D3 FSYE13A0R FSYE13A0R1 FSYE13A0R3 2E12 MIL-STD-750 a3 4741 5 PDF

    dcm04

    Abstract: DCM04S0A0S12
    Text: DCM04S0A0S12PFA FEATURES Š Š Š Š Š Š Š Š Š Š Š Š Š Š Delphi DCM, Non-Isolated Point of Load DC/DC Power Modules: 2.4-5.5Vin, 0.6-3.3V/12Aout High efficiency: 95% @ 5.0Vin, 3.3V/12A out Small size and low profile: 20.3x 11.4x 8.5mm 0.8”x 0.45”x 0.33”


    Original     		DCM04S0A0S12PFA V/12A QS9000, OHSAS18001 V/12Aout x6220 DCM04S0A0S12PFA dcm04 DCM04S0A0S12 PDF

    Untitled

    Abstract: No abstract text available
    Text: DCM12S0A0S12NFA FEATURES                 Delphi DCM, Non-Isolated Point of Load DC/DC Power Modules: 4.5~14Vin, 0.69-5.0V/12Aout The Delphi Series DCM, 4.5-14V input, single output, non-isolated Point of Load DC/DC converters are the latest


    Original     		DCM12S0A0S12NFA 14Vin, V/12Aout x6220 DCM12S0A0S12NFA PDF

    68w Transistor smd

    Abstract: bbc 127 324 DIODE TRANSISTOR SMD 13W smd transistor yb lamp indicator 115vac 400hz 18w smd transistor RD 6BL relay 12v 1c/o kd smd transistor SGR642H
    Text: Willow Technologies Relay Selector 2002 Signal / Telecommunications Electromechanical HG4100 HG4516 HG4507 HG4078B SGR46G 1C/O 2C/O 1C/O 1C/O Switching Current 1A 2A 2A 5A Switching Voltage 125VAC / 60VDC 125VAC / 150VDC Breaking Capacity 62.5VA / 30W 50VA / 30W


    Original     		HG4100 HG4516 HG4507 HG4078B SGR46G 125VAC 60VDC 150VDC 24VDC 68w Transistor smd bbc 127 324 DIODE TRANSISTOR SMD 13W smd transistor yb lamp indicator 115vac 400hz 18w smd transistor RD 6BL relay 12v 1c/o kd smd transistor SGR642H PDF

    Untitled

    Abstract: No abstract text available
    Text: FSPYE230R, FSPYE230F TM Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the


    Original     		FSPYE230R, FSPYE230F PDF

    1E14

    Abstract: 2E12 FSPYE230D1 FSPYE230F FSPYE230R FSPYE230R3
    Text: FSPYE230R, FSPYE230F TM Data Sheet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Intersil Star*Power Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the


    Original     		FSPYE230R, FSPYE230F 1E14 2E12 FSPYE230D1 FSPYE230F FSPYE230R FSPYE230R3 PDF

    SMD transistor k22

    Abstract: SMD transistor k21 SMD TRANSISTOR 12a fast recovery diode 600v 12A k22 smd 12A transistor smd SMD K22 HFA40HF60 diode smd 600V soft recovery
    Text: International füg Rectifier HEXFRED P D -2 .3 8 1 Provisional Data Sheet HFA40HF60 u l t r a fa s t, s o f t RECOVERY DIODE Characteristics Vbr Units 600 V 'F AV 12 A trr 75 ns Qrr 375 nC 10 A 2.0 V 600V, 12A Features: — Ultrafast Recovery — Ultra Soft Recovery


    OCR Scan     		HFA40HF60 00A/ps, 200AIpS, SMD transistor k22 SMD transistor k21 SMD TRANSISTOR 12a fast recovery diode 600v 12A k22 smd 12A transistor smd SMD K22 diode smd 600V soft recovery PDF

    JTs smd diode

    Abstract: TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE smd transistor marking p3 12A p transistor smd 12A transistor smd SMD TRANSISTOR 12a smd transistor marking 1j transistor smd sG SMD TRANSISTOR MARKING P2 STTA1206D/DI/G
    Text: rz7 SGS-THOMSON ^ 7 # M O œ iL E O T M Û S S T T A 1206G TURBOSWITCH "A". ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCTS CHARACTERISTICS I f av 12A V rrm 600V trr (typ) 28ns Vf (max) 1.5V FEATURES AND BENEFITS • SPECIFIC TO ’’FREEWHEEL MODE” OPERA­


    OCR Scan     		1206G JTs smd diode TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE smd transistor marking p3 12A p transistor smd 12A transistor smd SMD TRANSISTOR 12a smd transistor marking 1j transistor smd sG SMD TRANSISTOR MARKING P2 STTA1206D/DI/G PDF

    SMD transistor k21

    Abstract: No abstract text available
    Text: International US Rectifier HEXFRED PD-2.381 Provisional Data Sheet HFA40HF60 ULTRA FAST, SOFT RECOVERY DIODE Features: — Ultrafast Recovery — Ultra Soft Recovery — Very Low Ir r m — Very Low Qrr — Guaranteed Avalanche — Specified at Operating Conditions


    OCR Scan     		HFA40HF60 HFA40HF60 00A/pS, 00A//1S, SMD transistor k21 PDF

    IRHN7450SE

    Abstract: No abstract text available
    Text: | p j j -0 p p q j-j q p q | Provisional Data Sheet No. PD-9.1313A I R Rectifier IRHN7450SE REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N-CHANNEL SINGLE EVENT EFFECT SEE RAD HARD 500 Volt, 0.51 Q, (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology


    OCR Scan     		IRHN7450SE IRHN7450SE PDF

    Untitled

    Abstract: No abstract text available
    Text: International IOR Rectifier Provisional Data Sheet No. PD-9.1313A IRHN7450SE REPETITIVE A V A LA N C H E AN D dv/dt RA TED HEXFET TRANSISTOR N -C H A N N E L S IN G L E E V E N T E F F E C T S E E R A D H A R D 500 Volt, 0.510 , (SEE) RAD HARD HEXFET International Rectifier’s (SEE) RAD HARD technology


    OCR Scan     		IRHN7450SE PDF

    transistor c925

    Abstract: smd transistor c928 transistor c923 c927 diode c928 DIODE C921 transistor smd qe c924 diode smd qe C925
    Text: P D - 9.1142 bitemational [«»IRectifier IRGBC30KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Ie • Short circuit rated -1 Ops @125°C, VqE= 15V • Switching-loss rating includes all "tail" losses


    OCR Scan     		IRGBC30KD2-S C-927 SMD-220 C-928 transistor c925 smd transistor c928 transistor c923 c927 diode c928 DIODE C921 transistor smd qe c924 diode smd qe C925 PDF

    smd transistor NG

    Abstract: No abstract text available
    Text: FSYE13A0D, FSYE13A0R M ay 1999 D ata S h eet Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs T h e D iscrete Products O pe ra tio n of Harris Sem ico n du cto r has d evelo ped a s e ries of R adiation H a rd e n e d M O S F E T s specifically d esig n ed for c o m m ercial and m ilitary spa c e


    OCR Scan     		FSYE13A0D, FSYE13A0R 1-800-4-HARRIS smd transistor NG PDF

    transistor c925

    Abstract: DIODE C921
    Text: P D - 9.1142 International [ËjüRectffier IRGBC30KD2-S Short Circuit Rated UltraFast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • Short circuit rated -10ns @125°C, VGe = 15V Switching-loss rating includes all "tail" losses


    OCR Scan     		IRGBC30KD2-S -10ns D020717 SMD-220 C-928 transistor c925 DIODE C921 PDF

    c380 transistor

    Abstract: transistor c380 transistor c373 transistor c380 o transistor c374 transistor T C380 transistor c377 smd transistor 18E
    Text: kitemational i« ]Rectifier P D - 9.1143 IRGBC30MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Short circuit rated -10ns @125°C, VGE = 15V • Switching-ioss rating includes all "tail" losses


    OCR Scan     		-10ns 10kHz) IRGBC30MD2-S C-379 SMD-220 C-380 c380 transistor transistor c380 transistor c373 transistor c380 o transistor c374 transistor T C380 transistor c377 smd transistor 18E PDF

    transistor c374

    Abstract: transistor c373 transistor c377
    Text: International [^Rectifier P D -9.1143 IRGBC30MD2-S Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces = 600V Short circuit rated -1 Ops @ 125°C, V qe = 15V Switching-loss rating includes all "tail" losses


    OCR Scan     		IRGBC30MD2-S 10kHz) high-volta379 SMD-220 C-380 transistor c374 transistor c373 transistor c377 PDF