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    IXYS Corporation IXGH12N60BD1

    IGBT 600V 24A 100W TO247AD
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    12N60BD Datasheets Context Search

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    12n60b

    Abstract: 12n60bd1 12N60BD
    Text: IXGA 12N60BD1 IXGP 12N60BD1 HiPerFASTTM IGBT Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 600 V VGES Continuous ±20 V VGEM Transient ±30 V IC25 TC = 25°C 24 A IC90 TC = 90°C 12 A ICM TC = 25°C, 1 ms


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    PDF 12N60BD1 O-220 12n60b 12n60bd1 12N60BD

    Untitled

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGH 12N60BD1 VDSS ID25 VCE sat tfi(typ) = 600 V = 24 A = 2.1 V = 120 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient


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    PDF 12N60BD1 O-247

    12N60BD1

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGA 12N60BD1 IXGP 12N60BD1 VCES IC25 VCE sat tfi(typ) = 600 V = 24 A = 2.1 V = 120 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20


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    PDF 12N60BD1 12N60BD1 O-220 O-263

    12n60b

    Abstract: No abstract text available
    Text: HiPerFASTTM IGBT IXGH 12N60BD1 VDSS ID25 VCE sat tfi(typ) = 600 V = 24 A = 2.1 V = 120 ns Preliminary data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 600 V VCGR T J = 25°C to 150°C; RGE = 1 MW 600 V VGES Continuous ±20 V VGEM Transient


    Original
    PDF 12N60BD1 O-247 12n60b

    12n60c

    Abstract: 60n60 igbt 20N30 diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60
    Text: HiPerFASTTM IGBT G-Series Contents IGBT VCES V 300 Low VCE sat 600 1000 TO-220 IC VCE(sat) (IXGP) TC = max 25 °C TC=25 °C A V PLUS247 (IXGX) 1.6 1.8 60 1.6 1.8 IXGH 30N30 IXGH 40N30 40 1.7 IXGH 31N60 75 ¬ 1.6 75 ¬ 1.6 ä ä ä IXGH 20N30 IXGH 28N30 TO-268 ISOPLUS247TM


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    PDF O-220 O-263 O-247 PLUS247 O-268 ISOPLUS247TM O-264 20N30 28N30 30N30 12n60c 60n60 igbt diode b242 31N60 ixgk50n60bu1 50n60bd1 Diode 12 b2 120n60 60N60

    Untitled

    Abstract: No abstract text available
    Text: □IXYS Advanced Technical Information HiPerFAST IGBT IXGH 12N60BD1 VDSS = 600 V 24 A ^D25 V = 2.1 V v CE sat 120 ns ^fi(typ) ” Symbol TestC onditions V C ES Tj = 25°C to 150°C 600 V V CGR Tj = 25°C to 150°C; RGE = 1 M£i 600 V V G ES Continuous


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    PDF 12N60BD1