Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    12V P-CHANNEL POWER MOSFET Search Results

    12V P-CHANNEL POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    12V P-CHANNEL POWER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: RF1K49092 Data Sheet 3.5A/2.5A, 12V, 0.050/0.130 Ohm, Logic Level, Complementary LittleFET Power MOSFET August 1999 File Number 3968.5 Features • 3.5A, 12V N-Channel 2.5A, 12V (P-Channel) [ /Title (RF1K This complementary power MOSFET is manufactured using


    Original     		PDF RF1K49092

    RF1K49093

    Abstract: AN9321 AN9322 MS-012AA RF1K4909396 TB334
    Text: RF1K49093 Data Sheet August 1999 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET File Number 3969.5 Features • 2.5A, 12V This Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses


    Original     		PDF RF1K49093 RF1K49093 AN9321 AN9322 MS-012AA RF1K4909396 TB334

    RF1K4909396

    Abstract: delta motor RF1K49093 AN9321 AN9322 MS-012AA TB334
    Text: RF1K49093 Data Sheet August 1999 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET File Number 3969.5 Features • 2.5A, 12V This Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses


    Original     		PDF RF1K49093 RF1K4909396 delta motor RF1K49093 AN9321 AN9322 MS-012AA TB334

    relay 12v dc 5 chan

    Abstract: No abstract text available
    Text: RF1K49093 Data Sheet August 1999 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET File Number 3969.5 Features • 2.5A, 12V Title This Dual P-Channel power MOSFET is manufactured using F1K4 an advanced MegaFET process. This process, which uses


    Original     		PDF RF1K49093 relay 12v dc 5 chan

    RF1K49093

    Abstract: RF1K4909396 AN9321 AN9322 MS-012AA TB334
    Text: RF1K49093 Data Sheet January 2002 2.5A, 12V, 0.130 Ohm, Logic Level, Dual P-Channel LittleFET Power MOSFET Features • 2.5A, 12V This Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits,


    Original     		PDF RF1K49093 130opment. RF1K49093 RF1K4909396 AN9321 AN9322 MS-012AA TB334

    p-channel pspice model

    Abstract: AN9321 AN9322 MS-012AA RF1K49092 RF1K4909296
    Text: RF1K49092 S E M I C O N D U C T O R January 1997 3.5A/2.5A, 12V, Avalanche Rated, Logic Level, Complementary LittleFET Enhancement Mode Power MOSFET Features Description • 3.5A, 12V N-Channel 2.5A, 12V (P-Channel) • UIS Rating Curve The RF1K49092 complementary power MOSFET is


    Original     		PDF RF1K49092 RF1K49092 1e-30 61e-4 09e-6) 10e-3 99e-6) 82e-3 47e-7) p-channel pspice model AN9321 AN9322 MS-012AA RF1K4909296

    F7101

    Abstract: IRF7101 IRF7338
    Text: PD - 94372C IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω P-CHANNEL MOSFET


    Original     		PDF 94372C IRF7338 EIA-481 EIA-541. F7101 IRF7101 IRF7338

    IRF7338

    Abstract: MOSFET N-CHANNEL 60v 60A
    Text: PD - 94372B IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω P-CHANNEL MOSFET


    Original     		PDF 94372B IRF7338 EIA-481 EIA-541. IRF7338 MOSFET N-CHANNEL 60v 60A

    F7101

    Abstract: IRF7101 IRF7338
    Text: PD - 94372A IRF7338 HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S1 G1 S2 G2 N-CHANNEL MOSFET 1 8 D1 2 7 D1 3 6 D2 4 5 D2 P-CHANNEL MOSFET VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω


    Original     		PDF 4372A IRF7338 EIA-481 EIA-541. F7101 IRF7101 IRF7338

    RF1K49093

    Abstract: AN7254 AN9321 AN9322 MS-012AA RF1K4909396
    Text: RF1K49093 S E M I C O N D U C T O R 2.5A, 12V, Avalanche Rated, Logic Level, Dual P-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Features Description • 2.5A, 12V The RF1K49093 Dual P-Channel power MOSFET is manufactured using an advanced MegaFET process. This process, which uses feature sizes approaching those of LSI


    Original     		PDF RF1K49093 RF1K49093 1e-30 61e-4 09e-6) 10e-3 99e-6) 82e-3 47e-7) AN7254 AN9321 AN9322 MS-012AA RF1K4909396

    EIA-541

    Abstract: F7101 IRF7101 IRF7338PBF
    Text: PD - 95197 IRF7338PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free S1 N-CHANNEL MOSFET 1 8 D1 G1 2 7 D1 S2 3 6 D2 4 5 D2 G2 VDSS N-Ch P-Ch 12V -12V RDS on 0.034Ω 0.150Ω


    Original     		PDF IRF7338PbF EIA-481 EIA-541. EIA-541 F7101 IRF7101 IRF7338PBF

    NS4160

    Abstract: FDR840P
    Text: FDR840P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .


    Original     		PDF FDR840P NS4160 FDR840P

    Untitled

    Abstract: No abstract text available
    Text: FDR840P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .


    Original     		PDF FDR840P

    F852

    Abstract: F63TNR FDR840P fd840 00416
    Text: FDR840P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .


    Original     		PDF FDR840P F852 F63TNR FDR840P fd840 00416

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3443 Power MOSFET P-CHANNEL 2.5-V G-S MOSFET  DESCRIPTION The UTC UT3443 is a P-channel power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low gate charge with a 12V gate


    Original     		PDF UT3443 UT3443 UT3443G-AG6-R OT-26 QW-R502-557

    NS4160

    Abstract: Si4463DY 4463 SO-8 4463 SO8 MOSFET
    Text: Si4463DY P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .


    Original     		PDF Si4463DY NS4160 4463 SO-8 4463 SO8 MOSFET

    4463 SO8 MOSFET

    Abstract: 4463 B
    Text: Si4463DY P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage 2.5V – 12V .


    Original     		PDF Si4463DY 4463 SO8 MOSFET 4463 B

    ultrasound piezoelectric transducer

    Abstract: TP5322K1-G TP5322N8 K1 switch SOT23 FET P-Channel Switch Converter 12V to 220V logic pulser TN2124K1 TP5322 p-channel mosfet sot-89
    Text: Product Summary Sheet TP5322 P-Channel Enhancement-Mode Vertical DMOS FET Ultrasound Pulser High Side Switch +90V 12V Up to 220V 0.1µF TP5322K1 Applications Low Power Converters High Side Switch TP5322K1 10nF Logic Input Control 12V Management Ultrasound


    Original     		PDF TP5322 TP5322K1 TN2124K1 TP5322 110pF. -220V ultrasound piezoelectric transducer TP5322K1-G TP5322N8 K1 switch SOT23 FET P-Channel Switch Converter 12V to 220V logic pulser TN2124K1 p-channel mosfet sot-89

    UT3443

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT3443 Preliminary Power MOSFET P-CHANNEL 2.5-V G-S MOSFET „ DESCRIPTION The UTC UT3443 is a P-channel power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low gate charge with a 12V gate


    Original     		PDF UT3443 UT3443 OT-26 UT3443L-AG6-R UT3443G-AG6-R QW-R502-557

    logic level complementary MOSFET

    Abstract: No abstract text available
    Text: RF1K49092 ÎSÎ HARRIS S E M I C O N D U CTÖR January 1997 3.5A/2.5A, 12V, Avalanche Rated, Logic Level, Complementary LittleFET Enhancement Mode Power MOSFET Features Description • 3.5A, 12V N-Channel 2.5A, 12V (P-Channel) • UIS Rating Curve The RF1K49092 complementary power MOSFET is


    OCR Scan     		PDF RF1K49092 RF1K49092 TA49092. Logic12V 050i2 S-012A RF1K4909296. MS-012AA logic level complementary MOSFET

    Untitled

    Abstract: No abstract text available
    Text: RF1K49093 HARRIS S E M I C O N D U C T O R 2.5A, 12V, Avalanche Rated, Logic Level, Dual P-Channel LittleFET Enhancement Mode Power MOSFET January 1997 Description Features 2.5 A, 12V The RF1K49093 Dual P-Channel power MOSFET is manu­ factured using an advanced MegaFET process. This pro­


    OCR Scan     		PDF RF1K49093 RF1K49093 85e-10 1e-30 09e-6) 99e-6) 82e-3 47e-7)

    Untitled

    Abstract: No abstract text available
    Text: HARRIS R S E M I C O N D U C T O R January 1997 F 1 K 4 9 9 2 3.5A/2.5A, 12V, Avalanche Rated, Logic Level, Complementary LittleFET Enhancement Mode Power MOSFET Features Description • 3.5A, 12V N-Channel 2.5A, 12V (P-Channel) • UIS Rating Curve


    OCR Scan     		PDF RF1K49092 85e-10 1e-30 09e-6) 99e-6) 82e-3 47e-7)

    bc 331

    Abstract: mosfet ir 840 irlms4502 P 838 X MOSFET diode marking code YF IRLMS5703 IRLMS6702 Micro6 Package marking JB diode D 042 silicon rectifier diode
    Text: P D -93759 International IOR Rectifier IRLMS4502 HEXFET Power MOSFET • • • • Ultra Low O n-R esistance P-Channel M O SFET Surface M ount A vailable in Tape & Reel V dss = -12V RüS on = 0.042Î2 Description These P-Channel MOSFETs from International Rectifier


    OCR Scan     		PDF PD-93759 IRLMS4502 OT-23. EIA-481 EIA-541. bc 331 mosfet ir 840 irlms4502 P 838 X MOSFET diode marking code YF IRLMS5703 IRLMS6702 Micro6 Package marking JB diode D 042 silicon rectifier diode

    Untitled

    Abstract: No abstract text available
    Text: PD-91849D International IOR Rectifier IRF7233 HEXFET Power MOSFET • • • • Ultra Low O n-R esistance P-Channel M O SFET Surface Mount A vailable in Tape & Reel V dss = -12V RüS on = 0.020Q, Description These P-Channel MOSFETs from International Rectifier


    OCR Scan     		PDF PD-91849D IRF7233