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    130 MCP NAND DDR Search Results

    130 MCP NAND DDR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    54H30J Rochester Electronics LLC NAND Gate Visit Rochester Electronics LLC Buy
    DM74LS22J Rochester Electronics LLC DM74LS22 - NAND Logic Gate Visit Rochester Electronics LLC Buy
    54H30J/C Rochester Electronics LLC 54H30 - NAND Gate Visit Rochester Electronics LLC Buy
    946HM/C Rochester Electronics LLC 946 - NAND Gate Visit Rochester Electronics LLC Buy
    MC2101F Rochester Electronics LLC MC2101F - Dual NAND Logic Gate Visit Rochester Electronics LLC Buy

    130 MCP NAND DDR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MT29C4G48MAZAPAKQ-5

    Abstract: MT29C4G96MAZAPCJG-5 MT29C4G96M MT29C4G96MAZAPCJG-5IT MT29C4G48mazapakq MT29F8G16 lpddr2 mcp lpddr2 nand mcp MT29C8G96 samsung* lpddr2* pop package
    Text: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,


    Original     		PDF 168-Ball MT29C4G48MAYAPAKQ-5 MT29C4G48MAZAPAKQ-5 MT29C4G48MAZAPAKQ-6 MT29C4G96MAZAPCJG-5 MT29C4G96MAZAPCJG-6 MT29C8G96MAZAPDJV-5 MT29C8G96MAZAPDJV-6 09005aef83ba4387 MT29C4G96M MT29C4G96MAZAPCJG-5IT MT29C4G48mazapakq MT29F8G16 lpddr2 mcp lpddr2 nand mcp MT29C8G96 samsung* lpddr2* pop package

    MT29F4G08ABA

    Abstract: MT29F8G08A MT29F4G08ABAD MT29C4G96MAZ MT29F4G08ABB mt29f4g16aba MT29C4G96M MT29F4G08AB smd transistor marking BA1 MT29C8G96
    Text: Preliminary‡ Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYAPAKQ-5 IT, MT29C4G48MAZAPAKQ-5 IT, MT29C4G48MAZAPAKQ-6 IT, MT29C4G96MAZAPCJG-5 IT,


    Original     		PDF 168-Ball MT29C4G48MAYAPAKQ-5 MT29C4G48MAZAPAKQ-5 MT29C4G48MAZAPAKQ-6 MT29C4G96MAZAPCJG-5 MT29C4G96MAZAPCJG-6 MT29C8G96MAZAPDJV-5 MT29C8G96MAZAPDJV-6 09005aef83ba4387 MT29F4G08ABA MT29F8G08A MT29F4G08ABAD MT29C4G96MAZ MT29F4G08ABB mt29f4g16aba MT29C4G96M MT29F4G08AB smd transistor marking BA1 MT29C8G96

    MT29F4G08ABA

    Abstract: MT29C4G48 ELPIDA LPDDR2 POP MT29C4G48MAZBAAKQ-5
    Text: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAPŒ) MT29C4G48MAYBAAKQ-5 WT, MT29C4G48MAZBAAKQ-5 WT, MT29C4G96MAYBACJG-5 WT, MT29C4G96MAZBACJG-5 WT,


    Original     		PDF 168-Ball MT29C4G48MAYBAAKQ-5 MT29C4G48MAZBAAKQ-5 MT29C4G96MAYBACJG-5 MT29C4G96MAZBACJG-5 MT29C8G96MAYBADJV-5 MT29C8G96MAZBADJV-5 MT29F4G08ABA MT29C4G48 ELPIDA LPDDR2 POP

    MT29F4G08ABA

    Abstract: MT29F4G08A MT29F8G08A MT29F4G08AB MT29F4G08ABAD MT29C MT29F16G08A Micron MT29F8G08
    Text: Micron Confidential and Proprietary 168-Ball NAND Flash and LPDDR PoP TI OMAP MCP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package (PoP) MCP Combination Memory (TI OMAP ) MT29C4G48MAYBAAKQ-5 WT, MT29C4G48MAZBAAKQ-5 WT, MT29C4G96MAYBACJG-5 WT, MT29C4G96MAZBACJG-5 WT,


    Original     		PDF 168-Ball MT29C4G48MAYBAAKQ-5 MT29C4G48MAZBAAKQ-5 MT29C4G96MAYBACJG-5 MT29C4G96MAZBACJG-5 MT29C8G96MAYBADJV-5 MT29C8G96MAZBADJV-5 MT29F4G08ABA MT29F4G08A MT29F8G08A MT29F4G08AB MT29F4G08ABAD MT29C MT29F16G08A Micron MT29F8G08

    Flash MCp nand DRAM 107-ball

    Abstract: dq15d SAMSUNG MCP 130 MCP NAND DDR 512M nand mcp SAMSUNG MCp nand ddr KAG00J007M-FGG2 UtRAM Density nand mcp samsung ka
    Text: Advance Preliminary MCP MEMORY KAG00J007M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.6 October 2003 Advance Preliminary MCP MEMORY KAG00J007M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM


    Original     		PDF KAG00J007M-FGG2 256Mb 32Mx8) 4Mx16x4Banks) 107-Ball 80x13 Flash MCp nand DRAM 107-ball dq15d SAMSUNG MCP 130 MCP NAND DDR 512M nand mcp SAMSUNG MCp nand ddr KAG00J007M-FGG2 UtRAM Density nand mcp samsung ka

    SAMSUNG MCP

    Abstract: KAG00E007M-FGGV UtRAM Density samsung nor nand ddr mcp samsung mcp 107-ball Flash MCp nand DRAM 107-ball
    Text: Advance Preliminary MCP MEMORY KAG00E007M-FGGV MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.6 September 2003 Advance Preliminary MCP MEMORY KAG00E007M-FGGV Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM


    Original     		PDF KAG00E007M-FGGV 256Mb 16Mx16) 4Mx16x4Banks) 107-Ball 80x13 SAMSUNG MCP KAG00E007M-FGGV UtRAM Density samsung nor nand ddr mcp samsung mcp 107-ball Flash MCp nand DRAM 107-ball

    Samsung MCP

    Abstract: MCP NAND K5D5657ACM K5D5657ACM-F015 MCP 256M nand samsung mobile DDR
    Text: Advance Preliminary MCP MEMORY K5D5657ACM-F015 MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Preliminary MCP MEMORY K5D5657ACM-F015 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash / 256M Bit(4Mx16x4Banks) Mobile SDRAM


    Original     		PDF K5D5657ACM-F015 256Mb 32Mx8) 4Mx16x4Banks) 128Mb 107-Ball 80x13 Samsung MCP MCP NAND K5D5657ACM K5D5657ACM-F015 MCP 256M nand samsung mobile DDR

    toshiba toggle mode nand

    Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
    Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit


    Original     		PDF 64M128M 66MHz 100MHz 200MHz) 500/600MHz 800MHz 400MHz 800MHz) X16/X18X32 PhotoPC550 toshiba toggle mode nand TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP

    SAMSUNG MCP

    Abstract: Flash MCp nand DRAM 107-ball K5D5657DCM-F015 SAMSUNG 256Mb mcp Qualification Reliability dq15d samsung mcp 107-ball
    Text: Preliminary MCP MEMORY K5D5657DCM-F015 MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM -1- Revision 0.0 June 2003 Preliminary MCP MEMORY K5D5657DCM-F015 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash / 256M Bit(4Mx16x4Banks) Mobile SDRAM


    Original     		PDF K5D5657DCM-F015 256Mb 32Mx8) 4Mx16x4Banks) 107-Ball SAMSUNG MCP Flash MCp nand DRAM 107-ball K5D5657DCM-F015 SAMSUNG 256Mb mcp Qualification Reliability dq15d samsung mcp 107-ball

    toshiba emmc 4.4

    Abstract: toshiba 8GB Nand flash emmc toshiba emmc toshiba 16GB Nand flash emmc TCM9000MD TCM9200MD TOSHIBA eMMC CATALOG TC35893XBG RGB to MIPI DSI LCD toshiba 8GB Nand flash bga
    Text: 2008-9 SYSTEM CATALOG Mobile Solutions s e m i c o n d u c t o r h t t p : / / w w w. s e m i c o n . t o s h i b a . c o. j p / e n g Toshiba Semiconductor Devices for Mobile Applications Mobile communications via cellular phones and PDAs are changing the way we live.


    Original     		PDF SCE0008G E-28831 SCE0008H toshiba emmc 4.4 toshiba 8GB Nand flash emmc toshiba emmc toshiba 16GB Nand flash emmc TCM9000MD TCM9200MD TOSHIBA eMMC CATALOG TC35893XBG RGB to MIPI DSI LCD toshiba 8GB Nand flash bga

    SAMSUNG MCP

    Abstract: KAA00BB07M-DGUV UtRAM Density samsung nor nand ddr mcp nand sdram mcp M/BVS mcp ohm
    Text: Preliminary MCP MEMORY KAA00BB07M-DGUV Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash / 64M Bit (4Mx16) Burst UtRAM / 256M Bit (4Mx16x4Banks) Mobile SDRAM Revision History Revision No. History 0.0 Draft Date Initial draft - 256Mb NAND C-Die_Ver 2.6


    Original     		PDF KAA00BB07M-DGUV 16Mx16) 4Mx16) 4Mx16x4Banks) 256Mb 137-Ball 80x14 SAMSUNG MCP KAA00BB07M-DGUV UtRAM Density samsung nor nand ddr mcp nand sdram mcp M/BVS mcp ohm

    TCM9000MD

    Abstract: tcm9200md TC35894XBG tc358720xbg TC35893XBG MIPI bridge TC35894 MIPI DSI LCD TC358731XBG TC3587
    Text: システムカタログ 2008-9 システムカタログ ○○○○○○編 モバイルソリューション s e m i c o n d u c t o r h t tp://w w w.se micon.tosh iba.co.jp/ 東芝半導体モバイルソリューション 携帯電話をはじめとするモバイルコミュニケーションが私たちの生活を変えていきます。


    Original     		PDF TPS856 TLP848 TCS10/11 TC35711XBG ETC90521/JBTC90521 TC358720XBG TC358730XBG TC35890XBG SCJ0008F SCJ0008E TCM9000MD tcm9200md TC35894XBG tc358720xbg TC35893XBG MIPI bridge TC35894 MIPI DSI LCD TC358731XBG TC3587

    RISC-Processor s3c2410

    Abstract: MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B
    Text: A Section MEMORY Table of Contents SECTION A PAGE DRAM SDRAM 3a – 4a DDR SDRAM 5a – 6a DDR2 SDRAM 7a RDRAM 8a NETWORK DRAM 8a MOBILE SDRAM 9a GRAPHICS DDR SDRAM 10a DRAM ORDERING INFORMATION 11a –13a NAND FLASH COMPONENTS, SMART MEDIA, COMPACT FLASH


    Original     		PDF BR-04-ALL-005 BR-04-ALL-004 RISC-Processor s3c2410 MR16R1624DF0-CM8 arm9 samsung s3c2440 architecture chip 3351 dvd sp0411n K9W8G08U1M sandisk micro SD Card 2GB arm9 s3c2440 K9F1G08U0A K6X8008C2B

    sandisk micro sd card pin

    Abstract: MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi
    Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 L-11002-01 MITSUBISHI ELECTRIC CONTENTS 1. General 1 2. DRAM 9 3. Low Power SRAM


    Original     		PDF L-11002-01 L-11003-0I sandisk micro sd card pin MCP 1Gb nand 512mb dram 130 256K x 16 DRAM FPM cross reference Toshiba NAND MLC FLASH BGA TSOP 48 Package nand memory toshiba MCP 1Gb 512Mb 130 PC133 registered reference design L7103 02bjxx ulsi

    MARVELL PXA 930

    Abstract: 88AP320 PXA320 88ap310 88AP300 PXA312 pxa310 88AP303 marvell pxa310 xscale PXA310
    Text: Cover Marvell PXA3xx 88AP3xx Processor Family Electrical, Mechanical, and Thermal Functional Specification PXA30x Processor (88AP300, 88AP301, 88AP302, 88AP303) PXA31x Processor (88AP310, 88AP311, 88AP312) PXA32x Processor (88AP320, 88AP322) Doc. No. MV-S105156-00, Rev. 2.0 Version April 6, 2009 Released


    Original     		PDF 88AP3xx) PXA30x 88AP300, 88AP301, 88AP302, 88AP303) PXA31x 88AP310, 88AP311, 88AP312) MARVELL PXA 930 88AP320 PXA320 88ap310 88AP300 PXA312 pxa310 88AP303 marvell pxa310 xscale PXA310

    K9HDG08U1A

    Abstract: K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe
    Text: Product Selection Guide LCD, Memory and Storage - 1H 2011 Samsung Semiconductor, Inc Samsung continues to lead the industry with the broadest portfolio of memory products and technology. Its DRAM, flash, SRAM products are found in computers—from ultra-mobile notebooks


    Original     		PDF BR-11-ALL-001 K9HDG08U1A K9LCG08U0A k4g10325fe-hc04 KLM2G1DEHE-B101 K9WAG08U1B-PIB0 k9gag08u0e Ltn140at SAMSUNG HD502HJ hd204ui klm2g1dehe

    SMD TQFP microcontroller NEC

    Abstract: CMOS-9HD CB10VX CMOS-N5 ARM1136J PBGA 376 vhdl code pdf cisc processor CMOS-10HD ARM11 mpcore MCM NAND
    Text: ASIC T echn o l o gy H an dbo o k 2009 1 ARM, ARM7TDMI-S, ARM926EJ-S, ARM946E-S, ARM966E-S, ARM11 and ARM Cortex are trademarks of ARM Ltd. All other product, brand, or trade names used in this pamphlet are the trademarks or registered trademarks of their respective owners.


    Original     		PDF ARM926EJ-S, ARM946E-S, ARM966E-S, ARM11 A17023EE9V0PF00 SMD TQFP microcontroller NEC CMOS-9HD CB10VX CMOS-N5 ARM1136J PBGA 376 vhdl code pdf cisc processor CMOS-10HD ARM11 mpcore MCM NAND

    L24002

    Abstract: NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP
    Text: Future On Chips MITSUBISHI SEMICONDUCTORS MITSUBISHI ELECTRIC CORPORATION ULSI Memory Memory Series Series ULSI RAM/MCP/FLASH New Data Package http://www.mitsubishichips.com Jul. 2000 MITSUBISHI ELECTRIC L-11002-01 CONTENTS General Business Operation Network and Production Facilities


    Original     		PDF L-11002-01 64MDRAM 64MSDRAM 128MSDRAM 256MSDRAM 144MRDRAM L24002 NAND "read disturb" 1GB Toshiba 512 NAND MLC FLASH BGA PC133 registered reference design CMOS 0.8mm process cross Lithium battery CR2025 sony M2V28S30AVP M5M51008CFP

    RTL28

    Abstract: arm cortex a9 mpcore CMOS-9HD CB90L VHDL code for ADC and DAC SPI with FPGA 24KEc cortex a9 qfp ARM1136J Ethernet-MAC ic renesas ARM926EJ-STM
    Text: ASIC Technology Handbook www.renesas.eu ARM, ARM7TDMI-S, ARM926EJ-S, ARM946E-S, ARM966E-S, ARM11 and ARM Cortex are trademarks of ARM Ltd. 4KEc, 24KEm, 24KEc, 24KEf and 74Kf are trademarks of MIPS Technolgies. All other product, brand, or trade names used in this


    Original     		PDF ARM926EJ-S, ARM946E-S, ARM966E-S, ARM11 24KEm, 24KEc, 24KEf R05CS0001ED0101 RTL28 arm cortex a9 mpcore CMOS-9HD CB90L VHDL code for ADC and DAC SPI with FPGA 24KEc cortex a9 qfp ARM1136J Ethernet-MAC ic renesas ARM926EJ-STM

    MT29C4G48MAZBBAKQ-48 IT

    Abstract: MT29C8G96MAZBBDJV-48 IT MT29C4G96MAZBBCJG-48 mt29c4g96
    Text: Micron Confidential and Proprietary 168-Ball NAND Flash with LPDDR PoP Features NAND Flash and Mobile LPDDR 168-Ball Package-on-Package PoP Combination Memory (TI OMAP ) MT29C4G48MAZBBAKQ-48 IT: 4Gb x16 (NAND) with 2Gb x32 (LPDDR) MT29C4G96MAZBBCJG-48 IT: 4Gb x16 (NAND) with 4Gb x32 (LPDDR)


    Original     		PDF 168-Ball MT29C4G48MAZBBAKQ-48 MT29C4G96MAZBBCJG-48 MT29C8G96MAZBBDJV-48 09005aef855512a5 168ball MT29C4G48MAZBBAKQ-48 IT MT29C8G96MAZBBDJV-48 IT mt29c4g96

    MP5070

    Abstract: PXA32x ML-1162 pxa310 PXA320 ML-1117 kpc 817 PXA30x PXA31x PXA32x Processor PXA3xx marvell pxa310 pxa3xx
    Text: Specification Update PXA3xx 88AP3xx Processor Family 1. Introduction This document contains updates to the specifications for the PXA3xx (88AP3xx) Processor Family. This document is a compilation of device and documentation errata, specification clarifications, and specification changes. It is intended for


    Original     		PDF 88AP3xx) MV-S501088-00 MP5070 PXA32x ML-1162 pxa310 PXA320 ML-1117 kpc 817 PXA30x PXA31x PXA32x Processor PXA3xx marvell pxa310 pxa3xx

    Untitled

    Abstract: No abstract text available
    Text: EN71SN10F EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit • Device Packaging - 130 balls FBGA Area: 8x9 mm; Height: 1.0 mm • Operating Voltage


    Original     		PDF EN71SN10F 512-Mbit 16bit 16bit 32Down

    Untitled

    Abstract: No abstract text available
    Text: EN71SN10F EN71SN10F 1.8V NAND Flash + 1.8V Mobile DDR SDRAM Multi-Chip Package Features • Multi-Chip Package - NAND Flash Density: 1-Gbits - Mobile DDR SDRAM Density: 512-Mbit • Device Packaging - 130 balls FBGA Area: 8x9 mm; Height: 1.0 mm • Operating Voltage


    Original     		PDF EN71SN10F 512-Mbit 16bit 16bit 32Down

    mcz 300 1bd

    Abstract: SIT Static Induction Transistor HgCdTe philips igbt induction cooker UJT pin identification thyristor BT 161 Photo DIAC rct Thyristor dg23 transistor smd power IGBT MOSFET GTO SCR diode
    Text: 개정 신판 도해 반도체 가이드 개정신판 도해 반도체 가이드 개정 신판 도해 반도체 가이드 개정 신판 도해 반도체 가이드 발간에 즈음하여 Color and Visual Guide: Semiconductors Published by TOSHIBA CORPORATION


    Original     		PDF 128bit Division/e-Busin125 mcz 300 1bd SIT Static Induction Transistor HgCdTe philips igbt induction cooker UJT pin identification thyristor BT 161 Photo DIAC rct Thyristor dg23 transistor smd power IGBT MOSFET GTO SCR diode