T108
Abstract: SMT6 T108 T246 sMT6 T100 T106 T110 T116 T146 T148
Text: Transistors Packaging Packaging FSurface-mount type Package Code packaging specification direction Basic ordering unit TL Embossed tape Pin 1 is nearest to the sprocket hole. 13000 pcs TBL Embossed tape Pin 1 is nearest to the sprocket hole. 15000 pcs T106
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transistor bf 760
Abstract: MCH4008 945 npn
Text: MCH4008 Ordering number : ENN8395 NPN Epitaxial Planar Silicon Transistor MCH4008 UHF to C Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage. High gain : NF=1.1dB typ f=2GHz .
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MCH4008
ENN8395
20GHz
S21e2
transistor bf 760
MCH4008
945 npn
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MCH4008
Abstract: TB 2920
Text: MCH4008 Ordering number : ENN8395 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4008 UHF to C Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage.
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MCH4008
ENN8395
20GHz
S21e2
MCH4008
TB 2920
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mje 3007
Abstract: No abstract text available
Text: Ordering number : ENA0389A MCH4009 RF Transistor 3.5V, 40mA, fT=25GHz, NPN Single MCPH4 http://onsemi.com Features • • • • • Low-noise use : NF=1.1dB typ f=2GHz High cut-off frequency : fT=25GHz typ (VCE=3V) Low operating voltage High gain : |S21e|2=17dB typ (f=2GHz)
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ENA0389A
MCH4009
25GHz,
25GHz
A0389-15/15
mje 3007
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sanyo eg 8500
Abstract: transistor 9747 MCH4009
Text: MCH4009 Ordering number : ENA0389 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage.
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MCH4009
ENA0389
25GHz
A0389-13/13
sanyo eg 8500
transistor 9747
MCH4009
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sanyo eg 8500
Abstract: sanyo 14500 82306 MCH4009 MJE 13500 marking GG
Text: MCH4009 Ordering number : ENA0389 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage.
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MCH4009
ENA0389
25GHz
S21e2
A0389-13/13
sanyo eg 8500
sanyo 14500
82306
MCH4009
MJE 13500
marking GG
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Untitled
Abstract: No abstract text available
Text: MCH4009 Ordering number : ENA0389 NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • Low-noise use : High cut-off frequency : Low operating voltage. High gain : NF=1.1dB typ f=2GHz .
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MCH4009
ENA0389
25GHz
A0389-13/13
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Untitled
Abstract: No abstract text available
Text: MCH4009 Ordering number : ENA0389A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • • Low-noise use : NF=1.1dB typ f=2GHz High cut-off frequency : fT=25GHz typ (VCE=3V)
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MCH4009
ENA0389A
25GHz
A038915/15
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NE64400
Abstract: 11744 502
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION FEATURES The NE644 is a series of NPN silicon transistors designed foruse in low-noise, small signal amplifiers up to 6 GHz. The series features excellent power gain with very low noise figures. NE644 transistors are available in chip form or in
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NE64400
NE64408
NE644
NE64400,
NE64400
IS12S2
11744 502
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mje 3007
Abstract: 264 bf 6032 TB 1226 EN ENA0389A mch4009 MJE 13500
Text: MCH4009 Ordering number : ENA0389A SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor MCH4009 UHF to X Band Low-Noise Amplifier and OSC Applications Features • • • • • Low-noise use : NF=1.1dB typ f=2GHz High cut-off frequency : fT=25GHz typ (VCE=3V)
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ENA0389A
MCH4009
25GHz
A038915/15
mje 3007
264 bf 6032
TB 1226 EN
ENA0389A
mch4009
MJE 13500
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13000 BR transistor
Abstract: 13000 transistor TRANSISTOR 13000 J308 J309 SMPJ308 SMPJ309
Text: Databook.fxp 1/13/99 2:09 PM Page B-61 B-61 01/99 J308, J309 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Mixers ¥ Oscillators ¥ VHF/UHF Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current
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226AA
SMPJ308,
SMPJ309
13000 BR transistor
13000 transistor
TRANSISTOR 13000
J308
J309
SMPJ308
SMPJ309
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Untitled
Abstract: No abstract text available
Text: B 61 9-9 7 1308, J309 N -C H A N N E L SILICON JUNCTION FIELD-EFFECT TRANSISTOR • MIXERS • OSCILLATOR • VHF/UHF AMPLIFIERS Absolute maximum ratings at Ta = 25‘ C Reverse Gate Source & Reverse Gate Drain Voltage 360 mW 3 .2 7 m W /°C Power Derating
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T0-226AA
462fc
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transistor d 2389
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET_ \|F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm
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NE24283B
NE24283B
transistor d 2389
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TRANSISTOR K 2191
Abstract: nec 2761
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE434S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE434S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm
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NE434S01
NE434S01
NE434S01-T1
NE434S01-T1B
IR30-00
TRANSISTOR K 2191
nec 2761
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2SK281
Abstract: 203l2 NE218 NE21889 NE21800
Text: NEC/ L427414 OOOlblH Q 1SE D CALIFORNIA NEC T - 3 ,h lS LOW NOISE X-BAND G aAs MESFET NE21800 NE21889 FEATURES DESCRIPTION AND APPLICATIONS • V E R Y H IG H fmax: 60 G H z The NE218 is a 1 pm recessed gate gallium arsenide GaAs n-channel field effect transistor (FET). Offering low noise figure
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Lj457414
NE21800
NE21889
NE218
NE21800)
2SK281
203l2
NE21889
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Untitled
Abstract: No abstract text available
Text: DA TA SH EET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE429M01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE429M01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS, TVRO and another commercial systems.
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NE429M01
NE429M01
NE429M01-T1
Fin/50
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NE334S01
Abstract: transistor C 2240 K 1358 fet transistor
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE334S01 C BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE334S01 is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons.
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NE334S01
NE334S01
NE334S01-T1
NE334S01-T1B
IR30-00
transistor C 2240
K 1358 fet transistor
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estamat pfc12
Abstract: ESTAMAT power factor ESTAMAT estamat pfc 6 power factor controller esta power factor controller ESTAMAT PFC6 SUMMATION current transformer vishay interactive INTERACTIVE . VISHAY
Text: VISHAY I N T E R T E C H N O L O G Y , I N C . INTERACTIVE data book ESTAmat PFC vishay ESTA vse-db0050-0509 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0050-0509
estamat pfc12
ESTAMAT power factor
ESTAMAT
estamat pfc 6
power factor controller
esta power factor controller
ESTAMAT PFC6
SUMMATION current transformer
vishay interactive
INTERACTIVE . VISHAY
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ALL LAPTOP MOTHERBOARD CIRCUIT DIAGRAM
Abstract: LAPTOP CIRCUIT DIAGRAM MOTHERBOARD
Text: CY2292 Three-PLL General Purpose EPROM Programmable Clock Generator Features Benefits Three integrated phase-locked loops Generates up to 3 custom frequencies from external sources EPROM programmability Easy customization and fast turnaround Factory-programmable CY2292 or field-programmable Programming support available for all opportunities
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CY2292
CY2292)
CY2292F)
16-pin
ALL LAPTOP MOTHERBOARD CIRCUIT DIAGRAM
LAPTOP CIRCUIT DIAGRAM MOTHERBOARD
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NEC k 2134 transistor
Abstract: nec k 3115 transistor NEC D 587 KU 612 NEC k 3115 transistor NEC D 587 transistor NEC D 588 NEC m 2134 transistor P12778EJ1VODSOO transistor KU 612
Text: PRELIMINARY DATA SHEET_ M F f / HETERO JUNCTION FIELD EFFECT TRANSISTOR / NE24283B C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE24283B is a Herero Junction FET that utilizes the Unit : mm
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NE24283B
NE24283B
NEC k 2134 transistor
nec k 3115
transistor NEC D 587
KU 612
NEC k 3115 transistor
NEC D 587
transistor NEC D 588
NEC m 2134 transistor
P12778EJ1VODSOO
transistor KU 612
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ALL LAPTOP MOTHERBOARD CIRCUIT DIAGRAM
Abstract: LAPTOP CIRCUIT DIAGRAM MOTHERBOARD
Text: 5 CY2292 Three-PLL General-Purpose EPROM Programmable Clock Generator Features Benefits Three integrated phase-locked loops Generates up to 3 custom frequencies from external sources EPROM programmability Easy customization and fast turnaround Factory-programmable CY2292 or field-programmable Programming support available for all opportunities
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CY2292
CY2292)
CY2292F)
16-pin
CY2292
ALL LAPTOP MOTHERBOARD CIRCUIT DIAGRAM
LAPTOP CIRCUIT DIAGRAM MOTHERBOARD
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laptop motherboard circuit diagram
Abstract: 4 MHz crystal 13000 transistor laptop motherboard resistors TRANSISTOR 13000 xtal 32.768 CY2295 ICD2023 ICD2028 CY2291
Text: CY2291 Three-PLL General Purpose EPROM Programmable Clock Generator Features Benefits Three integrated phase-locked loops Generates up to 3 custom frequencies from external sources EPROM programmability Easy customization and fast turnaround Factory-programmable CY2291 or field-programmable Programming support available for all opportunities
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CY2291
CY2291)
CY2291F)
laptop motherboard circuit diagram
4 MHz crystal
13000 transistor
laptop motherboard resistors
TRANSISTOR 13000
xtal 32.768
CY2295
ICD2023
ICD2028
CY2291
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NEC Ga FET
Abstract: Nec K 872 NE325S01 AM/SSC 9500 ic data
Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE325S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero Junction FET that utilizes the hetero junction to create high m obility electrons. Its excellent low noise and high associated gain make it suitable for DBS
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NE325S01
NE325S01
NE325S01-T1
NE325S01-T1B
IR30-00
NEC Ga FET
Nec K 872
AM/SSC 9500 ic data
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CY2291
Abstract: CY2291F CY2291FI CY2291I CY2292 CY2295 ICD2023 ICD2028 laptop intel MOTHERBOARD CIRCUIT diagram ALL LAPTOP MOTHERBOARD CIRCUIT DIAGRAM
Text: 5 CY2291 Three-PLL General Purpose EPROM Programmable Clock Generator Features Benefits Three integrated phase-locked loops Generates up to 3 custom frequencies from external sources EPROM programmability Easy customization and fast turnaround Factory-programmable CY2291 or field-programmable Programming support available for all opportunities
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CY2291
CY2291)
CY2291F)
CY2291
CY2291F
CY2291FI
CY2291I
CY2292
CY2295
ICD2023
ICD2028
laptop intel MOTHERBOARD CIRCUIT diagram
ALL LAPTOP MOTHERBOARD CIRCUIT DIAGRAM
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