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    13001 SWITCHING CIRCUIT Search Results

    13001 SWITCHING CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TBAW56 Toshiba Electronic Devices & Storage Corporation Switching Diode, 80 V, 0.215 A, SOT23 Visit Toshiba Electronic Devices & Storage Corporation
    HN1D05FE Toshiba Electronic Devices & Storage Corporation Switching Diode, 400 V, 0.1 A, ES6 Visit Toshiba Electronic Devices & Storage Corporation
    ICL7662CBD-0 Rochester Electronics LLC Switched Capacitor Converter, 10kHz Switching Freq-Max, CMOS, PDSO14, SOIC-14 Visit Rochester Electronics LLC Buy
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation

    13001 SWITCHING CIRCUIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    RF65-12S

    Abstract: RF62-26S JENNINGS rfid-26s JENNINGS RF72-26S RF63-26S RF63 MIL-R-83725 RF65D-12S RF62 rf622
    Text: SPDT Vacuum Relays RF 62, 63, 65 SPECIFICATIONS Model Number Test Voltage kV Peak 60 Hz Rated Operating Voltage (kV Peak) DC or 60 Hz 2.5 MHz 16 MHz 32 MHz Continous Current, Carry (Amps, RMS) DC or 60 Hz 2.5 MHz 16 MHz 32 MHz Contact Capacitance (pF) Between Open Contacts


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    PDF RF65-12S RF62-26S M83725/16-002 M83725/16-004 M83725/16-001 M83725/16-003 M83725/13-001 M83725/13-002 RF63-26S RF65-12S RF62-26S JENNINGS rfid-26s JENNINGS RF72-26S RF63-26S RF63 MIL-R-83725 RF65D-12S RF62 rf622

    2CMA180806R1000

    Abstract: dbb 23000 ycym 2X2X0,8 2CMA132635R1000 din 43864 rs232 kwh 2CMA180807R1000 2CMA180844R1000 2CMA180804R1000 2CMA180800R1000 2CMA180852R1000
    Text: DELTAplus DIN Rail Mounted electricity meters Technical Documentation DELTAplus Table of Contents DELTAplus General Description . 4 Chapter 1: Assortment . 5


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    PDF 2CMC481002D0008/29567 SE-611 2CMA180806R1000 dbb 23000 ycym 2X2X0,8 2CMA132635R1000 din 43864 rs232 kwh 2CMA180807R1000 2CMA180844R1000 2CMA180804R1000 2CMA180800R1000 2CMA180852R1000

    SSP7404NA

    Abstract: MosFET
    Text: SSP7404NA 35A, 30V, RDS ON 2.8 mΩ Ω N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOP-8PP FEATURES Low RDS(on) trench technology. Low thermal impedance. Fast switching speed.


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    PDF SSP7404NA 27BSC 30-Dec-2013 SSP7404NA MosFET

    13001 TRANSISTOR sw

    Abstract: 13001 TRANSISTOR 13001 SW 8A 13001 TRANSISTOR JAPAN transistor 2sd2645 2SD2645 TA-3088 c s 13001 TRANSISTOR all transistor 13001 13001 switching 5V 1A supply
    Text: Ordering number : ENN6897A 2SD2645 NPN Triple Diffused Planar Silicon Transistor 2SD2645 Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).


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    PDF ENN6897A 2SD2645 2SD2645] 13001 TRANSISTOR sw 13001 TRANSISTOR 13001 SW 8A 13001 TRANSISTOR JAPAN transistor 2sd2645 2SD2645 TA-3088 c s 13001 TRANSISTOR all transistor 13001 13001 switching 5V 1A supply

    13001 switching 5V 1A supply

    Abstract: 13001 TRANSISTOR 13001 TRANSISTOR JAPAN 13001 SW 8A 13001 TRANSISTOR equivalent sw 13001 transistor 13001 2SD2645 D1503 all transistor 13001
    Text: 2SD2645 Ordering number : ENN6897B NPN Triple Diffused Planar Silicon Transistor 2SD2645 Color TV Horizontal Deflection Output Applications Features • • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).


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    PDF 2SD2645 ENN6897B 13001 switching 5V 1A supply 13001 TRANSISTOR 13001 TRANSISTOR JAPAN 13001 SW 8A 13001 TRANSISTOR equivalent sw 13001 transistor 13001 2SD2645 D1503 all transistor 13001

    13001 TRANSISTOR

    Abstract: 13001 SW 8A transistor 2sd2645 2SD2645 13001 switching 5V 1A supply c s 13001 TRANSISTOR transistor s 13001 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN transistor 13001
    Text: Ordering number : ENN6897 2SD2645 NPN Triple Diffused Planar Silicon Transistor 2SD2645 Color TV Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process). Adoption of MBIT process.


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    PDF ENN6897 2SD2645 2SD2645] 13001 TRANSISTOR 13001 SW 8A transistor 2sd2645 2SD2645 13001 switching 5V 1A supply c s 13001 TRANSISTOR transistor s 13001 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN transistor 13001

    13001 TRANSISTOR

    Abstract: 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN 13001 TRANSISTOR sw transistor s 13001 c s 13001 TRANSISTOR 13001 npn 13001 SW 8A 2SC5690 all transistor 13001
    Text: Ordering number : ENN6896 2SC5690 NPN Triple Diffused Planar Silicon Transistor 2SC5690 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).


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    PDF ENN6896 2SC5690 2SC5690] 13001 TRANSISTOR 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN 13001 TRANSISTOR sw transistor s 13001 c s 13001 TRANSISTOR 13001 npn 13001 SW 8A 2SC5690 all transistor 13001

    Untitled

    Abstract: No abstract text available
    Text: Analog Power AM7404NA N-Channel 30-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 30 Typical Applications: • Synchronous Buck DC/DC Conversion • Synchronous Rectification • Power Routing and ORing


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    PDF AM7404NA AM7404NA

    jk 13001

    Abstract: tr 13001 13001 SD marking jk ENN6863 MCH3310 ta306 ta-306
    Text: Ordering number : ENN6863 MCH3310 P-Channel Silicon MOSFET MCH3310 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2167 [MCH3310] 0.25 • 0.3 0.15 2 0.65 0.25 1 2.1


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    PDF ENN6863 MCH3310 MCH3310] jk 13001 tr 13001 13001 SD marking jk ENN6863 MCH3310 ta306 ta-306

    13001 TRANSISTOR

    Abstract: transistor s 13001 2SC5690 c s 13001 TRANSISTOR 13001 npn 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN 13001 TRANSISTOR sw 13001 SW 8A TA-3087
    Text: Ordering number : ENN6896A 2SC5690 NPN Triple Diffused Planar Silicon Transistor 2SC5690 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • High speed. High breakdown voltage VCBO=1500V . High reliability(Adoption of HVP process).


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    PDF ENN6896A 2SC5690 2SC5690] 13001 TRANSISTOR transistor s 13001 2SC5690 c s 13001 TRANSISTOR 13001 npn 13001 TRANSISTOR equivalent 13001 TRANSISTOR JAPAN 13001 TRANSISTOR sw 13001 SW 8A TA-3087

    13001 SD

    Abstract: tr 13001 sw 13001 13001 data MCH3412
    Text: Ordering number : ENN6901 MCH3412 N-Channel Silicon MOSFET MCH3412 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resinstance. Ultrahigh-speed switching. 4V drive. unit : mm 2167 [MCH3412] 0.25 • 0.3 0.15 2 0.65 0.25 1


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    PDF ENN6901 MCH3412 MCH3412] 13001 SD tr 13001 sw 13001 13001 data MCH3412

    6610

    Abstract: sw 13001 tr 13001 2SK2864 TA3092
    Text: Ordering number : ENN6610 2SK2864 N-Channel Silicon MOSFET 2SK2864 Ultrahigh-Speed Switching Applications • • Low ON-resistance. unit : mm Ultrahigh-speed switching. 2128 Enables simplified fabrication, high-density mounting, and miniaturization in end products due to the surface


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    PDF ENN6610 2SK2864 2SK2864] 6610 sw 13001 tr 13001 2SK2864 TA3092

    TA-3061

    Abstract: tr 13001 MCH3410 68641 13001 SW 8A
    Text: Ordering number : ENN6864 MCH3410 N-Channel Silicon MOSFET MCH3410 Ultrahigh-Speed Switching Applications Features • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2167 [MCH3410] 0.25 • 0.3 0.15 2 0.65 0.25 1 2.1


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    PDF ENN6864 MCH3410 MCH3410] TA-3061 tr 13001 MCH3410 68641 13001 SW 8A

    13001 switching 5V 1A supply

    Abstract: CPH3414 TA-306 13001 s 60 IT02706
    Text: Ordering number : ENN6862 CPH3414 N-Channel Silicon MOSFET CPH3414 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. unit : mm 2152A [CPH3414] 2.9 0.6 3 0.2 0.15 0.4 2 1 0.6


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    PDF ENN6862 CPH3414 CPH3414] 13001 switching 5V 1A supply CPH3414 TA-306 13001 s 60 IT02706

    13001 LZ

    Abstract: SR 13001 PA 13001
    Text: Advance information •■ II AS4VC1M16E5 2.5V 1Mx 16 CMOS lntelliwatt,v DRAM EDO Features • Organization: 1 ,0 4 8 ,5 7 6 w ords • H igh speed X • 10 24 refresh cycles, 16 m s refresh interval 16 bits - RAS-only or CAS-before-RAS refresh or self refresh


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    PDF AS4VC1M16E5 42-pin 44/50-pin AS4VC1M16E5-50JC AS4VC1M16E5-50TC AS4VC1M16E5-60JC AS4VC1M16E5-60TC 13001 LZ SR 13001 PA 13001

    PA 13001

    Abstract: 13001 switching 13001 equivalent c s x 13001 H 06 tsc 3001 256KX16 Rmw46 RS 13001 13001 s 60 HA 13001
    Text: Advance information •■ AS4VC256K16E0 1 2.5V 2 5 6 K X 16 CMOS DRAM EDO Features • O rganization: 2 6 2 ,1 4 4 w o rd s x 16 bits • H igh speed - 4 5 / 6 0 ns RAS access tim e - 2 0 / 2 5 ns c o lu m n address access tim e - 14 / 1 6 ns CAS access tim e


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    PDF AS4VC256K16E0 256KX16 40-pin 40/44-pin AS4VC256K1Ã AS4VC256K16E0-45JC AS4VC256K16E0-60JC AS4VC256K16E0-45TC PA 13001 13001 switching 13001 equivalent c s x 13001 H 06 tsc 3001 Rmw46 RS 13001 13001 s 60 HA 13001

    D 13009 K

    Abstract: 13000 SERIES 13009 K A13001 Series-3000 13009 l 13009 applications AC 130-03
    Text: Switchcraft 300 LEV-R SWITCHES - SERIES 3000 AND 13000 SWITCHCRAFT, INC. 5555 N. Elston Ave. • C h ica g o , IL 60630 • 773 792-2700 • FAX: 773 792-2129 • w w w .sw itch cra ft.co m LEVER SWITCHES continued LEV-R® SWITCH SERIES 3000, 13000 fr - K H 3 LOCK W tW


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    PDF DQD5173 D 13009 K 13000 SERIES 13009 K A13001 Series-3000 13009 l 13009 applications AC 130-03

    75325

    Abstract: 116PIN 13001b si 13001 SG7532N
    Text: LIN Doc #: 55325 •VI T h e I I n f i n i t e K i l l t P I I o w e o f i\ I ( n n i\ o I ( v a S Q t i o uad N n ot S o u r c e R / D S ual ink ecommended for DESCRIPTION N KEY D e m o r y ew D ri ver esigns FEATURES 600m A OUTPUT CAPABILITY A lthough u se d ex tensively in


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    PDF 116-pin MIL-STD-883 SG7532N SG7532J SG55325J SG55325J/883B SG55325F SG55325F/883B 75325 116PIN 13001b si 13001 SG7532N

    2sd2645

    Abstract: transistor s 13001 13001 HF
    Text: Ordering number : ENN6897 NPN Triple Diffused Planar Silicon Transistor 2SD2645 ISA/iYO Color TV Horizontal Deflection Output Applications Features • • • • • Package Dimensions High speed. High breakdown voltage VCBO= 1500V . High reliability(Adoption of HVP process).


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    PDF ENN6897 2SD2645 2SD2645] 2sd2645 transistor s 13001 13001 HF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6896 NPN Triple Diffused Planar Silicon Transistor 2SC5690 ISAfiYOi Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features • • • • • Package Dimensions High speed. High breakdown voltage VCBO= 1500V .


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    PDF ENN6896 2SC5690 2SC5690]

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6610 ] N-Channel Silicon MOSFET 2SK2864 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. unit : mm • Ultrahigh-speed switching. 2128 • Enables simplified fabrication, high-density mounting,


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    PDF ENN6610 2SK2864 2SK2864] 10fjs,

    jk 13001 E

    Abstract: jk 13001 TA 68634 th 2167 jk 13001 h
    Text: Ordering number : ENN6863 P-Channel Silicon MOSFET MCH3310 ISAfiYOl Ultrahigh-Speed Switching Applications Package Dimensions Features unit : mm 2167 • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. [MCH3310] 0 .1 5 . 0 .3 _ 311 o ïïtr -


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    PDF ENN6863 MCH3310 MCH3310] jk 13001 E jk 13001 TA 68634 th 2167 jk 13001 h

    N13001

    Abstract: No abstract text available
    Text: I Ordering number : ENN6862~| N-Channel Silicon MOSFET CPH3414 Ultrahigh-Speed Switching Applications Features Package Dimensions unit : mm • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. 2152 A Specifications Absolute Maximum Ratings at Ta=25°C


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    PDF ENN6862~ CPH3414 N13001

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6612 | N-Channel Silicon Junction FET EC3A01B Capacitor Microphone Applications Features Package Dimensions • Ultrasmall l 006 size , thin (0.5m m) leadless package, • Especially suited for use in audio, telephone capacitor unit : mm


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    PDF ENN6612 EC3A01B EC3A01B] E-CSP1006