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Catalog Datasheet	MFG & Type	PDF	Document Tags
diode k 1140 Abstract: D225 Diode 130P03LS Text: 130P03LS G OptiMOS -P Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 13 mΩ ID -22.5 A • Logic level • 150°C operating temperature • Avalanche rated PG-TDSON-8 • Vgs=25V, specially suited for notebook applications	Original	PDF	BSC130P03LS 130P03LS diode k 1140 D225 Diode 130P03LS
D225 Diode Abstract: No abstract text available Text: 130P03LS G OptiMOS -P Power-Transistor TM Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 13 mΩ ID -22.5 A • Logic level • 150°C operating temperature • Avalanche rated PG-TDSON-8 • Vgs=25V, specially suited for notebook applications	Original	PDF	BSC130P03LS 130P03LS D225 Diode
Untitled Abstract: No abstract text available Text: 130P03LS G OptiMOS -P Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 13 mΩ ID -22.5 A • Logic level • 150°C operating temperature • Avalanche rated PG-TDSON-8 • Vgs=25V, specially suited for notebook applications	Original	PDF	BSC130P03LS 130P03LS
D225 Diode Abstract: No abstract text available Text: 130P03LS G OptiMOS -P Power-Transistor Product Summary Features • P-Channel • Enhancement mode VDS -30 V RDS on ,max 13 mW ID -22.5 A • Logic level • 150°C operating temperature • Avalanche rated; RoHS compliant PG-TDSON-8 • Vgs=25V, specially suited for notebook applications	Original	PDF	BSC130P03LS IEC61249-2-21 130P03LS D225 Diode
D225 Diode Abstract: D225 Diode 100 IEC61249-2-21 Text: 130P03LS G OptiMOS -P Power-Transistor Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 13 mΩ ID -22.5 A • Logic level • 150°C operating temperature • Avalanche rated; RoHS compliant PG-TDSON-8 • Vgs=25V, specially suited for notebook applications	Original	PDF	BSC130P03LS IEC61249-2-21 130P03LS D225 Diode D225 Diode 100 IEC61249-2-21
D225 Diode Abstract: 130P03LS Text: 130P03LS G OptiMOS -P Power-Transistor Product Summary Features • P-Channel • Enhancement mode VDS -30 V RDS on ,max 13 mW ID -22.5 A • Logic level • 150°C operating temperature • Avalanche rated; RoHS compliant PG-TDSON-8 • Vgs=25V, specially suited for notebook applications	Original	PDF	BSC130P03LS IEC61249-2-21 130P03LS D225 Diode 130P03LS
D225 Diode Abstract: 130P03LS D225 Diode 100 d225 Text: 130P03LS G OptiMOS -P Power-Transistor TM Product Summary Features • P-Channel • Enhancement mode V DS -30 V R DS on ,max 13 mΩ ID -22.5 A • Logic level • 150°C operating temperature • Avalanche rated PG-TDSON-8 • Vgs=25V, specially suited for notebook applications	Original	PDF	BSC130P03LS 130P03LS D225 Diode 130P03LS D225 Diode 100 d225