OPB0604
Abstract: 839 transistor
Text: Silicon Photo Transistor OPB0604 1. Structure 1.1 Chip Size : 0.60mm X 0.45mm 1.2 Chip thickness : 220±30um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 130um : Emitter Electrode : Base Electrode
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OPB0604
130um
000lux
2856K.
500uA
RL-1000
OPB0604
839 transistor
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Untitled
Abstract: No abstract text available
Text: Silicon Photo Transistor OPB1104 1. Structure 1.1 Chip Size : 0.42mm X 1.17mm 1.2 Chip thickness : 280 20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 130um - Base : 60um X 60um 1.6 Active Area : 0.31mm X 0.46mm
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OPB1104
130um
500uA
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Untitled
Abstract: No abstract text available
Text: Silicon Photo Transistor OPB0604 1. Structure 1.1 Chip Size : 0.60mm X 0.45mm 1.2 Chip thickness : 220 30um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 130um : Emitter Electrode : Base Electrode
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OPB0604
130um
000lux
2856K.
RL-1000
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OPB1104
Abstract: No abstract text available
Text: Silicon Photo Transistor OPB1104 1. Structure 1.1 Chip Size : 0.42mm X 1.17mm 1.2 Chip thickness : 280±20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 130um - Base : 60um X 60um 1.6 Active Area : 0.31mm X 0.46mm
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OPB1104
130um
500uA
OPB1104
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Crystal 32 MHz 12 pF
Abstract: No abstract text available
Text: PL610-6x 1.8V to 3.3V XO IC’s for 312.5kHz to 60MHz, with Standby FEATURES DESCRIPTION • Single IC to cover up to 60MHz output frequency. Direct oscillation operation Input Frequency: Fundamental crystal: o 10MHz to 60MHz Output Frequency: LVCMOS
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PL610-6x
60MHz,
60MHz
10MHz
60MHz
40MHz
PL610-6x
25kHz
60MHz.
Crystal 32 MHz 12 pF
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marking xt 12
Abstract: MTC1
Text: 1.8V to 3.3V XO IC’s for 156.25kHz to 60MHz, with Standby FEATURES DESCRIPTION • Single IC to cover up to 60MHz output frequency. Direct oscillation operation Input Frequency: Fundamental crystal: o 5MHz to 60MHz Output Frequency: LVCMOS o 156.25kHz to 60MHz 2.5V & 3.3V
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25kHz
60MHz,
60MHz
60MHz
40MHz
PL610-6x
marking xt 12
MTC1
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Untitled
Abstract: No abstract text available
Text: ED-016IRA AlGaAs/GaAs IrED Chips 940 nm Features : Typical Applications : • AlGaAs/GaAs wafer • Good spectral matched to si detector • High power • Low forward voltage • Remote Controller • Pperipheral Device • Photocoupler • Photointerrupter
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ED-016IRA
130um
370um
280um
385um
385um
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880nm
Abstract: No abstract text available
Text: ED-216IR AlGaAs/AlGaAs IrED Chips 880 nm Features : Typical Applications : •N side up • Industrial Infrared Equipment Outline Dimensions : Unit: um 385 370 n-Electrode n-AlGaAs epi layer 385 n-Electrode 130 255 p-AlGaAs epi layer Emission area p-Electrode
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ED-216IR
130um
370um
255um
385um
385um
880nm
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Untitled
Abstract: No abstract text available
Text: NJU6221 Series PRELIMINARY 1.8V Operating Voltage Fundamental Quartz Crystal Oscillator IC with Input Tolerant Function !GENERAL DESCRIPTION The NJU6221 series is a C-MOS quartz crystal oscillator IC realized excellent frequency stability for fundamental up to
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NJU6221
60MHz)
f0/16,
f0/32
f0/64
63VDD
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OPA8535HN
Abstract: No abstract text available
Text: OPA8535HN Infrared LED Chip High Speed / N Side-Up GaAlAs/GaAlAs 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol
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OPA8535HN
--------------------130um
OPA8535HN
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OPA8732HP
Abstract: No abstract text available
Text: OPA8732HP F Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs (N Type) Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage
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OPA8732HP
--------------------130um
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OPA6611
Abstract: No abstract text available
Text: OPA6611 Red LED Chip N Side-Up GaAlAs/GaAs 1. Material Substrate GaAs P Type Epitaxial Layer GaAlAs(N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Min Forward Voltage Typ Unit
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OPA6611
10mil
10mil
12mil
12mil
130um
11mil
OPA6611
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OPA9447
Abstract: No abstract text available
Text: Infrared LED Chip OPA9447 GaAlAs/GaAs 1. Material Substrate Epitaxial Layer GaAs N Type GaAlAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol 3. Electro-Optical Characteristics Forward Voltage VF Min Reverse Voltage
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OPA9447
100mA
130um
--------------------------11milx
--------------------------11mil
OPA9447
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OPA9448
Abstract: 110MIL
Text: Infrared LED Chip OPA9448 GaAlAs/GaAs 1. Material Substrate Epitaxial Layer GaAs N Type GaAlAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol 3. Electro-Optical Characteristics Forward Voltage VF Min Reverse Voltage
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OPA9448
100mA
130um
--------------------------11mix
--------------------------11mil
OPA9448
110MIL
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OPA8512HP
Abstract: No abstract text available
Text: OPA8512HP Infrared LED Chip High Speed GaAlAs/GaAlAs 1. Material Substrate GaAlAs N Type Removed Epitaxial Layer GaAlAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Forward Voltage
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OPA8512HP
--------------------130um
OPA8512HP
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OPA9433LT
Abstract: No abstract text available
Text: Infrared LED Chip OPA9433LT GaAs/GaAs 1. Material Substrate GaAs N Type Epitaxial Layer GaAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol Min VF(1) Forward Voltage VF(2) Reverse Voltage
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OPA9433LT
100mA
--------------------130um
OPA9433LT
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OPA9437EU
Abstract: Au Sn eutectic
Text: Infrared LED Chip OPA9437EU GaAlAs/GaAs 1. Material Substrate GaAs P Type Epitaxial Layer GaAlAs(N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy (Au/Sn Eutectic Metal) Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF
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OPA9437EU
100mA
14mil
15mil
130um
14mil
OPA9437EU
Au Sn eutectic
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OPA9443
Abstract: No abstract text available
Text: Infrared LED Chip OPA9443 GaAlAs/GaAs 1. Material Substrate Epitaxial Layer GaAs N Type GaAlAs(P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol 3. Electro-Optical Characteristics Forward Voltage VF Min Typ Max Unit
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OPA9443
100mA
130um
--------------------------11mil
OPA9443
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48MLP
Abstract: 48-LQFP-0707 H bridge driver sg FAN8702 FAN8702B FAN8702MP FAN8702MPX mobile phone camera 2 channel h-bridge motor driver "DC Drive" motor control IRIS
Text: www.fairchildsemi.com FAN8702/FAN8702B/FAN8702MP 6 Channel DSC Motor Driver Features Description • • • • • • • • • • The FAN8702 is designed for portable equipment such as DSC and mobile phone camera. It consists of 2 constant current and 4 constant voltage drive blocks suitable for shutter, auto-focus, iris and zoom motor drive.
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FAN8702/FAN8702B/FAN8702MP
FAN8702
600mA
48-LQFP-0707
48MLP7X7
48MLP
48-LQFP-0707
H bridge driver sg
FAN8702B
FAN8702MP
FAN8702MPX
mobile phone camera
2 channel h-bridge motor driver
"DC Drive" motor control IRIS
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Untitled
Abstract: No abstract text available
Text: Infrared LED Chip OPA9433 GaAs/GaAs 1. Material Substrate GaAs N Type Epitaxial Layer GaAs (P/N Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF Reverse Voltage
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OPA9433
100mA
130um
--------------------11mil
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5053
Abstract: No abstract text available
Text: 5053 series Crystal Oscillator Module ICs OVERVIEW The 5053 series are miniature crystal oscillator module ICs supported 80MHz to 170MHz fundamental oscillation mode. The Oscillator circuit stage has voltage regulator drive, significantly reducing current consumption and crystal current, compared with
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80MHz
170MHz
ND13016-E-01
5053
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Untitled
Abstract: No abstract text available
Text: Infrared LED Chip OPA9425AL GaAs/GaAs 1. Material Substrate GaAs Epitaxial Layer GaAs 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Aluminum Alloy (N Type) (P/N Type) Parameter Symbol Min 3. Electro-Optical Characteristics Forward Voltage VF VR Reverse Voltage
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OPA9425AL
10mil
130um
10mil
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Untitled
Abstract: No abstract text available
Text: Infrared LED Chip OPA9428M GaAlAs/GaAs 1. Material Substrate Epitaxial Layer 2. Electrode N Cathode Side Gold Alloy P(Anode) Side Gold Alloy GaAs (N Type) GaAlAs(P/N Type) Parameter Symbol 3. Electro-Optical Characteristics Forward Voltage VF Min Reverse Voltage
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OPA9428M
100mA
130um
--------------------------11m
--------------------------11mil
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Untitled
Abstract: No abstract text available
Text: OPA8930HN Infrared LED Chip GaAlAs/GaAlAs High Speed / N Side-Up 1. Material Substrate GaAlAs P Type Removed Epitaxial Layer GaAlAs (N/P Type) 2. Electrode N(Cathode) Side Gold Alloy P(Anode) Side Gold Alloy 3. Electro-Optical Characteristics Parameter Symbol
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OPA8930HN
--------------------130um
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