Untitled
Abstract: No abstract text available
Text: ECG004 The Communications Edge TM InGaP HBT Gain Block Product Features Product Description Functional Diagram GND • DC – 6 GHz • +13.5 dBm P1dB at 1 GHz • +28 dBm OIP3 at 1 GHz • 16.2 dB Gain at 1 GHz • 3.2 dB Noise Figure at 2 GHz • Available in SOT-363, SOT-86,
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ECG004
OT-363,
OT-86,
OT-89
ECG004
1-800-WJ1-4401
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pj 989
Abstract: P4H1 232A2 6412a 1YZ85
Text: %:8H1<1@6:B&I646&+3884J&!87K&L I898<M8:&$NN" !"#$%&' "#$*+,-)./&012345678&!898178: 5143&;<=:>78?&+8@A141714B&CD"E&?F<G O864P:8A • !"#$%&'('%)'(*%+','-"."(/0%1234%5-"(676 ■ 89:%,$;(;&*(*+(;) ■ ■ ■ ■ @&
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3884J&
A141714B
O864P
H1Q18?
69R628
6761H6MH8
69R84&
Z12I1Z0%
pj 989
P4H1
232A2
6412a
1YZ85
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MMIC marking CODE l sot 86
Abstract: No abstract text available
Text: ECG004 The Communications Edge TM InGaP HBT Gain Block Product Features Product Description Functional Diagram GND • DC – 6 GHz • +13.5 dBm P1dB at 1 GHz • +28 dBm OIP3 at 1 GHz • 16.2 dB Gain at 1 GHz • 3.2 dB Noise Figure at 2 GHz • Available in SOT-363, SOT-86,
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ECG004
OT-363,
OT-86,
OT-89
ECG004
1-800-WJ1-4401
MMIC marking CODE l sot 86
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ECG004C
Abstract: No abstract text available
Text: ECG004 The Communications Edge TM Product Information InGaP HBT Gain Block Product Features x DC – 6 GHz Product Description x +28 dBm OIP3 at 1 GHz x 16.2 dB Gain at 1 GHz The ECG004 consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT process technology
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ECG004
ECG004
OT-89
1-800-WJ1-4401
ECG004C
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ECG004B-G
Abstract: No abstract text available
Text: ECG004 The Communications Edge TM InGaP HBT Gain Block Product Features Product Description • +13.5 dBm P1dB at 1 GHz • +28 dBm OIP3 at 1 GHz • 16.2 dB Gain at 1 GHz • 3.2 dB Noise Figure at 2 GHz • Lead-free / green SOT-89 pkg • Internally matched to 50 Ω
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ECG004
OT-89
ECG004
1-800-WJ1-4401
ECG004B-G
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AG302-86G
Abstract: No abstract text available
Text: ECG004 The Communications Edge TM Product Information InGaP HBT Gain Block Product Features x DC – 6 GHz Product Description x +28 dBm OIP3 at 1 GHz x 16.2 dB Gain at 1 GHz The ECG004 consists of Darlington pair amplifiers using the high reliability InGaP/GaAs HBT process technology
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ECG004
ECG004
1-800-WJ1-4401
AG302-86G
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Operational amplifier 10358
Abstract: MMIC "SOT 89" marking 12 86 ECG004 MMIC marking CODE l sot 86 ECG004B
Text: ECG004 The Communications Edge TM Product Information InGaP HBT Gain Block Product Features x DC – 6 GHz x +13.5 dBm P1dB at 1 GHz x +28 dBm OIP3 at 1 GHz x 16.2 dB Gain at 1 GHz x 3.2 dB Noise Figure at 2 GHz x Available in SOT-363, SOT-86, SOT-89 and lead-free / green
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ECG004
ECG004
1-800-WJ1-4401
Operational amplifier 10358
MMIC "SOT 89" marking 12 86
MMIC marking CODE l sot 86
ECG004B
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marking 25 mmic sot-89
Abstract: E004G
Text: ECG004 The Communications Edge TM InGaP HBT Gain Block Product Features Product Description Functional Diagram GND • DC – 6 GHz • +13.5 dBm P1dB at 1 GHz • +28 dBm OIP3 at 1 GHz • 16.2 dB Gain at 1 GHz • 3.2 dB Noise Figure at 2 GHz • Available in SOT-363, SOT-86,
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ECG004
OT-363,
OT-86,
OT-89
ECG004
1-800-WJ1-4401
marking 25 mmic sot-89
E004G
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WT11M
Abstract: TV8-516R T10-14R T10-10R TV14-38R TV14-8R TV18-6R TV18-516R TV18-14R T14-6R
Text: T&B Crimp Terminals Overview T&B Crimp Terminals and Splices T&B Crimp Terminals and Splices are designed specifically for inexpensive insulated and non-insulated electrical terminations. This terminal product group is perfect for most commercial applications. T&B
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T18-8R
T18-10R
T14-6R
T14-8R
T14-10R
T10-6R
T10-8R
T10-10R
T10-14R
T18-6R-1.
WT11M
TV8-516R
T10-14R
TV14-38R
TV14-8R
TV18-6R
TV18-516R
TV18-14R
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TAJE107M025
Abstract: 3216 footprint IPC Ta2O5 phase diagram TLJG107M004 TPS 1028 CWR09 CWR11 CWR19 CWR29 TS16949
Text: www.avx.com AVX Tantalum and Niobium Oxide Capacitors Version 10.5 Contents SECTION 1: SURFACE MOUNT COMMERCIAL TANTALUM Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-3
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S-TL0M410-C
TAJE107M025
3216 footprint IPC
Ta2O5 phase diagram
TLJG107M004
TPS 1028
CWR09
CWR11
CWR19
CWR29
TS16949
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HR5000
Abstract: U10-2 SMD CAPACITOR 1206 2.2Mf 16V smd code 12.00 Jn 1K100 NOJB107M006 FXXXX Plastic Mold CRYSTAL SMD TCJD106M050 CWR11
Text: www.avx.com AVX Tantalum and Niobium Oxide Capacitors Version 10.10 Contents SECTION 1: SURFACE MOUNT COMMERCIAL TANTALUM Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-3
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S-TL0M1010-C
HR5000
U10-2
SMD CAPACITOR 1206 2.2Mf 16V
smd code 12.00 Jn
1K100
NOJB107M006
FXXXX
Plastic Mold CRYSTAL SMD
TCJD106M050
CWR11
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kyocera 433 k
Abstract: avx smt catalogue 1 watt axial resistor k103 INFRARED laser 6y47 s7-200 TLCJ226M003 S2000A TACK334M016
Text: www.avx.com AVX Tantalum and Niobium Oxide Capacitors Version 12.6 Contents SECTION 1: SURFACE MOUNT COMMERCIAL TANTALUM Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2-3
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S-TL0M612-C
kyocera 433 k
avx smt catalogue
1 watt axial resistor
k103
INFRARED laser
6y47
s7-200
TLCJ226M003
S2000A
TACK334M016
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WT11M
Abstract: WT111 11823 die TV18-6LF T108L T188F T18-6F T18-10F T14-6F T14-8F
Text: T&B Crimp Terminals Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Catalog Numbering System . . . . . . . . . . 2 Ring Terminals Vinyl Insulated Ring Terminals . . . . . . . . 3 Non-Insulated Ring Terminals . . . . . . . . . 3 Fork Terminals
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WT111
WT111M
WT11M
11823 die
TV18-6LF
T108L
T188F
T18-6F
T18-10F
T14-6F
T14-8F
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62792
Abstract: 300/SCR 131- 6 WJ 66
Text: uuU RA66 / SMRA66 10 to 1000 MHz TO-8B1 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN - THREE STAGES: 37.0 dB TYP. LOW NOISE: <3.5 dB (TYP.) MEDIUM OUTPUT LEVEL: > +15.5 dBm (TYP.) HIGH REVERSE ISOLATION: >50 dB (TYP) Outline Drawings
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SMRA66
018-OCO2
VSW354
1-800-WJ1-4401
62792
300/SCR 131- 6 WJ 66
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WJ-A78
Abstract: No abstract text available
Text: uuU A78 / SMA78 5 to 300 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH DYNAMIC RANGE: +114 dB/1 MHz HIGH OUTPUT: +19.0 dBm TYR HIGH THIRD ORDER IP: +35 dBm (TYR) LOW NOISE FIGURE: 3.5 dB (TYR) IB Outline Drawings A78 Specifications*
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SMA78
50-OHM
1-800-WJ1
WJ-A78
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J 6920
Abstract: J 6920 FET 188 053
Text: uuU PA48 / SMPA48 1.0 TO 4.0 GHz TO-8B2 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT ULTRAWIDE BANDWIDTH: 0.8-4.2 GHz TYR HIGH OUTPUT LEVEL: +24.0 dBm (TYP.) HIGH GAIN: 16.0 dB (TYR) GaAs FET AMPLIFIER Outline Drawings PA48 Specifications’1
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SMPA48
50-ohm
1-800-WJ1-4401
J 6920
J 6920 FET
188 053
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wj-CA36-1
Abstract: WJ-A36 131- 6 WJ 67
Text: uuU A36-1 / SMA36-1 100 to 2300 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN - TWO STAGES: 16.2 dB TYP. LOW VSWR: <1.6:1 (TYP.) MEDIUM OUTPUT LEVEL: +12.0 dBm (TYP.) Outline Drawings A36-1 0 200 (5.06} Specifications*
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A36-1
SMA36-1
A36-1
50-ohm
1-800-WJ1-4401
wj-CA36-1
WJ-A36
131- 6 WJ 67
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Untitled
Abstract: No abstract text available
Text: L u ti A57/SMA57 10 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ MEDIUM OUTPUT LEVEL: +14 dBm TYP. ♦ HIGH THIRD ORDER I.P.: +28.0 dBm (TYP.) T< SPlfSSlfii Outline Drawings A 57 Specifications* Characteristics Typical 0° to 50 °C
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A57/SMA57
50-ohm
J1-4401
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WJ-CA37
Abstract: bc 162 transistor WJ-A37
Text: uuU A37 / SMA37 10 to 2000 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH OUTPUT LEVEL: +15 dBm TYP. HIGH THIRD ORDER I.P.: +28 dBm (TYP.) WIDE POWER SUPPLY RANGE: +5 TO +15 VOLTS Outline Drawings A 37 Specifications* 0 200
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SMA37
50-ohm
WJ-CA37
WJ-A37
1-800-WJ1-4401
bc 162 transistor
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transistor BC 339
Abstract: wj-a87
Text: uuJ A87-2 / SMA87-2 10 to 300 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT LOW NOISE FIGURE: 3.0 dB TYR HIGH EFFIEIENCY: 15 mA@ +5 Vdc (TYR) HIGH OUTPUT POWER AT 5 VOLTS: +11 dBm (TYP.) ♦ LOW VSWR: <1.5.1 (TYR) Outline Drawings
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A87-2
SMA87-2
A87-2
1-800-WJ1-4401
transistor BC 339
wj-a87
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WJ-A18-1
Abstract: No abstract text available
Text: uuü A181/SMA181 10 to 500 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH REVERSE ISOLATION: 22 dB TYR HIGH OUTPUT POWER: +22 dBm (TYP.) HIGH THIRD ORDER I.P.: +35 dBm (TYP.) Specifications’* Characteristics Frequency (Min.)
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A181/SMA181
50-ohm
GRO83
1-800-WJ1-4401
WJ-A18-1
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transistor BC 157
Abstract: WJ-A34 wj a34
Text: u j U A34/SMA34 100 to 2000 MHz TO-8 CASCADABLE AMPLIFIER ♦ AVAILABLE IN SURFACE MOUNT ♦ HIGH GAIN - TWO STAGES: 16 dB TYP. ♦ ULTRALOW PHASE DEVIATION FROM LINEARITY: < ±3° ; 500-2000 MHz ♦ LOW VSWR: <1.5:1 (TYP.) ♦ MEDIUM LEVEL OUTPUT: +7 dBm (TYP.)
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A34/SMA34
50-ohm
ran967
J1-4401
transistor BC 157
WJ-A34
wj a34
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transistor BC 157
Abstract: 13000 transistor TO-220
Text: u u U A66 / SMA66 10 to 1200 MHz TO-8 CASCADABLE AMPLIFIER ♦ ♦ ♦ ♦ ♦ AVAILABLE IN SURFACE MOUNT HIGH GAIN -TWO STAGES: 23.5 dB TYP. LOW NOISE: <3.8 dB (TYP.) HIGH OUTPUT LEVEL: +15.0 dBm (TYP.) WIDE POWER SUPPLY RANGE: 5 TO 15 VOLTS Outline Drawings
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SMA66
1-800-WJ1-4401
transistor BC 157
13000 transistor TO-220
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LM331
Abstract: LM331 f to v converter LM131 1Hz-100kHz LM231 LM131A LM331AH aeks LM331A H06C
Text: — 400 — LM131/A, LM231/A, LM331/A T + D Î , A Î S Œ * A Î ) 'B f E I C j : t « t 5 V -.F 3 ? -c, 7 ) M i r - ;u j g ¡ 6 * f c |i , 1H z Â>ü 1 0 0 k H z <7)*EH"CSâÆT è ?». tti tilt * — -7'S- 3 l / 7 ? I i i è S : i t t e ' ) , 3 T T L n.fäVU&Wj&tzl t 40V i f i O
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LM131/A,
LM231/A,
LM331/A
100kHz
50ppm/r
10kHz
LM131AK,
LM131H,
LM231AH,
LU231H,
LM331
LM331 f to v converter
LM131
1Hz-100kHz
LM231
LM131A
LM331AH
aeks
LM331A
H06C
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