NEC semiconductor
Abstract: NEC MARKING surface diode ir30 2ds223
Text: '$7$ 6+ 7 6,/,&21 75$16,6725 6' 131 6,/,&21 (3,7$;,$/ 75$16,6725 25 /2:)5(48(1&< 32:(5 $03/,),(56 PACKAGE DRAWING (UNIT: mm) The 2SD2230 is an element realizing ultra low VCE(sat). This transistor is ideal for muting such as stereo recorders, VCRs,
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2SD2230
C11531E)
NEC semiconductor
NEC MARKING surface
diode ir30
2ds223
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FL 210 transistor
Abstract: CTX210602
Text: TOP VIEW 2.54 REF 4 PLCS RECOMMENDED PCB PAD LAYOUT 2.54 (4 PLCS) 3.0 REF 21.0 MAX 1 10 2 3 10.16 REF 4 16.5 MAX 1.74 (7 PLCS) 6 5 0.584 SQ REF (7 PLCS) 8.42 11.9 21.0 28.7 26.0 MAX ELECTRICAL CHARACTERISTICS Turns ratio @ (10 - 2)/(3 - 2): 131 – 135 Turns ratio @ (10 - 2)/(2 - 1): 131 – 135
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CTX210602
FL 210 transistor
CTX210602
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2SB1150
Abstract: D1317 2SB115
Text: '$7$ 6+ 7 6,/,&21 32:(5 75$16,6725 6' 131 6,/,&21 (3,7$;,$/ 75$16,6725 '$5/,1*721 &211(&7,21 25 /2:)5(48(1&< 32:(5 $03/,),(56 FEATURES PACKAGE DRAWING (UNIT: mm) • On-chip Zener diode • High DC current gain due to Darlington connection • Large current capacity and low VCE(sat)
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O-126
2SB1150
2SB1150
D1317
2SB115
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Untitled
Abstract: No abstract text available
Text: '$7$ 6+ 7 COMPOUND TRANSISTOR %$/0 RQFKLS UHVLVWRU 131 VLOLFRQ HSLWD[LDO WUDQVLVWRU RU PLGVSHHG VZLWFKLQJ FEATURES PACKAGE DRAWING (UNIT: mm) • On-chip bias resistor (R = 4.7 kΩ, R = 4.7 kΩ) • Complementary transistor with BN1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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Untitled
Abstract: No abstract text available
Text: '$7$ 6+ 7 COMPOUND TRANSISTOR %$/0 RQFKLS UHVLVWRU 131 VLOLFRQ HSLWD[LDO WUDQVLVWRU RU PLGVSHHG VZLWFKLQJ FEATURES PACKAGE DRAWING (UNIT: mm) • On-chip bias resistor (R = 4.7 kΩ, R = 4.7 kΩ) • Complementary transistor with BN1L3M ABSOLUTE MAXIMUM RATINGS (Ta = 25°°C)
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CE1F3P
Abstract: D1617
Text: '$7$ 6+ 7 &203281' 75$16,6725 &( 3 RQFKLS UHVLVWRU 131 VLOLFRQ HSLWD[LDO WUDQVLVWRU )RU PLGVSHHG VZLWFKLQJ The CE1F3P is a transistor of on-chip high hFE resistor incorporating dumper diode in collector to emitter and zener diode in collector to base as protect elements. This transistor is ideal for
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cycle50
CE1F3P
D1617
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Siemens SRS 20
Abstract: No abstract text available
Text: SIEMENS SIPMOS Small-Signal Transistors BSS 101 BSS 131 VDS = 240 V /D = 0 .1 3 /0 .1 0 A ^DSIonl = 1 6 0 • N channel • Enhancement mode • Packages: TO-92, SOT-231 Type Marking Ordering code for version on bulk Ordering code for version in tap e2)
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OT-231)
Q62702-S484
Q62702-S554
Q62702-S493
Q62702-S565
SIK00104
Siemens SRS 20
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Untitled
Abstract: No abstract text available
Text: SSE D N AMER PHILIPS/DISCRETE ^53=131 D0H025S 1 P o w e rM O S tra n s is to r B U K 4 2 6-80 0 A B U K 426-800B r - 3 1-// GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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D0H025S
426-800B
BUK426
-800A
-800B
26-800A
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CTX110602
Abstract: No abstract text available
Text: TOP VIEW 2.54 REF 4 PLCS RECOMMENDED PCB PAD LAYOUT 2.54 (4 PLCS) 3.0 REF PCB CUTOUT 21.0 MAX 1 10 2 3 10.16 REF 4 16.5 MAX 1.74 (7 PLCS) 6 5 0.584 SQ REF (7 PLCS) 8.42 16.6 11.9 21.0 28.7 26.0 MAX ELECTRICAL CHARACTERISTICS Turns ratio @ (10 - 2)/(2 - 1): 131 - 135
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CTX110602
CTX110602
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Ug 78A
Abstract: BUZ78 BUZ 78
Text: SIEM EN S SIPMOS Power MOS Transistor Vos lD = 800 V = 1 .5 A ^ D S o n = 8 BUZ 78 Q • N channel • E nhancem ent mode • Package: T O -2 2 0 A B 1) Type Ordering code BUZ 78 C 6 70 78-A 131 8-A2 Maximum Ratings Parameter Symbol Values Unit D rain-so urce voltage
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Untitled
Abstract: No abstract text available
Text: 4 3 D5 2 7 1 0053003 TFT • SI HARRIS HAS IRF130/ 131/ 132/133 IRF130R/1 31 R /132R /133R N -C hannel Power MOSFETs Avalanche Energy Rated* May 1992 Package Features TO-2Q4AA • 12A and 14A, 80V - 100V • rDS on = 0 .1 6 fi and 0 .2 3 ft SOURCE • Single Pulse Avalanche Energy Rated*
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IRF130/
IRF130R/1
/132R
/133R
IRF130,
1RF131,
IRF132,
IRF133
IRF130R,
IRF131R,
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Untitled
Abstract: No abstract text available
Text: N AMER P H I L I P S / D I S C R E T E ^ 53= 131 0 0 3 6 7 1 4 000 b ^ E 1> IAPX BFQ43 BFQ43S V.H.F. POWER TRANSISTORS N-P-N silicon planar epitaxial transistors intended fo r use in class-A, B or C operated mobile transmitters w ith a nominal supply voltage o f 13,5 V. The transistors are resistance stabilized and guaranteed to w ith
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BFQ43
BFQ43S
BFQ43
BLW31
BFQ43S
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74LS247
Abstract: 75492 TTL 74ls247 ttl 74141 9T TRANSISTOR 74LS248 MA5558 D135 D141 D143
Text: FAIRCHILD LOGIC/CONNECTION DIAGRAMS INTERFACE I26 75492, 9664 124 9613 [14 □ 13 □ 12 □ 11 □ 10 □ 9 □ 8 □ 8 OUTPUT A □ Vcc □ OUT B 7 2 +IN A Q 3 -IN A ^ 4 GND 6 □ +IN B 5 □ -IN B 2 OUT D Vss OUT C OUT C IN C I27 I28 mA5SS 131 7528, 7529
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mA2240
mA555
74LS247
75492
TTL 74ls247
ttl 74141
9T TRANSISTOR
74LS248
MA5558
D135
D141
D143
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CNX62
Abstract: BS415
Text: N AMER PHILIPS/DISCRETE 2SE D • ^53*131 GOHIOO? .1 ■ CNX62 r - 4 1 - g s HIGH-VO LTAGE O PTO CO U PLER T h e C N X 6 2 is an optocoupler consisting of an infrared emitting G aA s diode and a silicon npn phototransistor in a dual-in-line D IL plastic envelope. T h e base is not connected.
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CNX62
CNX62
bbS3T31
T-41-83
BS415
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BSJ110
Abstract: BSJ109 BSJ108
Text: •I P h ilip .S e m ic o n d u c to r. R ^ ^53=131 □□53755 077 p H 1 L lp s/Jil^ RZ^ tra n sisto re 8 '1'0 0 " ' k 1' ’ ' 6" 60* FE A T U R E S p - . Q U IC K R E F E R E N C E DATA SYM BOL • Interchangeability of drain and source connections
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BSJ108;
BSJ109;
BSJ110
BSJ108
BSJ109
BSJ108)
BSJ109)
BSJ110)
bb53T31
BSJ110
BSJ109
BSJ108
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16 sot 23
Abstract: BSS 130 marking SRs SOT E6327 Q62702-S565 Q67000-S229 marking BSs K3530
Text: BSS 131 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 131 240 V 0.1 A 16 Ω SOT-23 SRs Type BSS 131 BSS 131 Ordering Code Q62702-S565
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OT-23
Q62702-S565
Q67000-S229
E6327
E6433
Sep-13-1996
16 sot 23
BSS 130
marking SRs SOT
E6327
Q62702-S565
Q67000-S229
marking BSs
K3530
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Q62702-S565
Abstract: E6327 Q67000-S229 marking BSs marking SRs SOT SRs SOT23
Text: BSS 131 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • VGS th = 0.8.2.0V Pin 1 Pin 2 G Pin 3 S Type VDS ID RDS(on) Package Marking BSS 131 240 V 0.1 A 16 Ω SOT-23 SRs Type BSS 131 BSS 131 Ordering Code Q62702-S565
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OT-23
Q62702-S565
Q67000-S229
E6327
E6433
Q62702-S565
E6327
Q67000-S229
marking BSs
marking SRs SOT
SRs SOT23
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Siemens SRS 20
Abstract: marking BSs sot23 n1215 marking SRs SOT marking BSs sot23 siemens
Text: SIEMENS B S S 131 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 1 Pin 2 G Type BSS 131 Vbs 240 V b 0.1 A Type BSS 131 BSS 131 Ordering Code Q62702-S565 Q67000-S229 flDS(on) 16 Q Pin 3 S Package
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OT-23
Q62702-S565
Q67000-S229
E6327
E6433
OT-23
Siemens SRS 20
marking BSs sot23
n1215
marking SRs SOT
marking BSs sot23 siemens
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2n7588
Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.
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Untitled
Abstract: No abstract text available
Text: BSS 131 Infine on technologies SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.2.0V Pin 2 Pin 1 G Pin 3 S Type Vbs fc ffDS(on) Package Marking BSS 131 240 V 0.1 A 16Î2 SOT-23 SRs Type BSS 131 BSS 131
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OT-23
Q62702-S565
Q67000-S229
E6327
E6433
S35bQ5
Q133777
SQT-89
B535bQ5
D13377Ã
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T1P137
Abstract: P131T
Text: TIP130>T,P131' T,P132 III 'W i y 'l l L TIP135, TIP136, T1P137 TIP130, 131, 132 TIP135, 136,137 NPN PLASTIC POWER TRANSISTORS PNP PLASTIC POWER TRANSISTORS Power Darlingtons and Switching Applications DIM A B C D E F G H JH _ J K L M i N MIN MAX 16,51 10.67
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TIP135,
TIP136,
T1P137
TIP130
TIP130,
T1P137
P131T
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MMBR951L
Abstract: BR951L MRF951 mrf9511l
Text: MOTOROLA SEM ICO NDUCTOR TECHNICAL DATA MRF951 M M BR951L M RF9511L The RF Line NPN Silicon Low Noise, High-Frequency Transistors Iq = 100 mA LOW NOISE HIGH FREQUENCY TRANSISTORS . . . d e sig ned for u se in high gain, lo w n o ise sm all-signal am p lifiers. This series features
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MRF951
BR951L
RF9511L
MRF951
MMBR951L
mrf9511l
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Untitled
Abstract: No abstract text available
Text: AMER P H IL IP S /D IS C R E T E OLE D ^53=131 001SD0S a DhVtLUPM fcNI U A IA LV2931E50S This data sheet contains advance information and specifications are subject to change without notice. y v r 3 3 - 0 ? - MICROWAVE LINEAR POWER TRANSISTOR NPN silicon planar microwave power transistor intended for use in common-emitter class-A
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001SD0S
LV2931E50S
bbSBT31
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MMBR951L
Abstract: MRF9511LT1 MRF951 sot-23 marking 7z NF 028
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF951 M M BR951LT1 M M BR951ALT1 M RF9511LT1 The RF Line NPN Silicon Low N oise, H igh-Frequency Transistors Iq = 100 mA LOW NOISE HIGH-FREQUENCY TRANSISTORS . . . designed for use in high gain, low noise small-signal amplifiers. This series
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MRF951
BR951LT1
BR951ALT1
RF9511LT1
MRF951
OT-23
MMBR951LT1,
MMBR951ALT1
OT-143
MRF9511LT1
MMBR951L
sot-23 marking 7z
NF 028
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