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    Hitachi DSA002750

    Abstract: No abstract text available
    Text: HM62W9127HB Series 1 M High Speed SRAM 128-kword x 9-bit ADE-203-792A (Z) Preliminary Rev. 0.1 Nov. 1997 Description The HM62W9127HB is an asynchronous 3.3 V operation high speed static RAM organized as 131072word × 9-bit. It realize high speed access time (25/30 ns) with employing 0.8 µm shrink CMOS process


    Original     		HM62W9127HB 128-kword ADE-203-792A 131072word 400-mil 36-pin Hitachi DSA002750 PDF

    Untitled

    Abstract: No abstract text available
    Text: HN58V1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0146-0800Z (Previous ADE-203-314G (Z) Rev. 7.0) Rev. 8.00 Nov. 28. 2003 Description Renesas Technology's HN58V1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced


    Original     		HN58V1001 128-kword REJ03C0146-0800Z ADE-203-314G 131072word 128-byte PDF

    Untitled

    Abstract: No abstract text available
    Text: HN58C1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0145-0800Z (Previous ADE-203-028G (Z) Rev.7.0) Rev. 8.00 Nov. 27. 2003 Description Renesas Technology's HN58C1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced


    Original     		HN58C1001 128-kword REJ03C0145-0800Z ADE-203-028G 131072word 128-byte PDF

    HN58C1001 Series

    Abstract: HN58C1001-15 HN58C1001 HN58C1001P-15 HN58C1001FP-15 HN58C1001FP-15E HN58C1001T-15 HN58C1001T-15E REJ03C0145-0800Z
    Text: HN58C1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0145-0800Z (Previous ADE-203-028G (Z) Rev.7.0) Rev. 8.00 Nov. 27. 2003 Description Renesas Technology's HN58C1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced


    Original     		HN58C1001 128-kword REJ03C0145-0800Z ADE-203-028G 131072word 128-byte HN58C1001 Series HN58C1001-15 HN58C1001P-15 HN58C1001FP-15 HN58C1001FP-15E HN58C1001T-15 HN58C1001T-15E REJ03C0145-0800Z PDF

    Renesas mnos

    Abstract: No abstract text available
    Text: HN58C1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0145-0800Z (Previous ADE-203-028G (Z) Rev.7.0) Rev. 8.00 Nov. 27. 2003 Description Renesas Technology's HN58C1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced


    Original     		HN58C1001 128-kword REJ03C0145-0800Z ADE-203-028G 131072word 128-byte Renesas mnos PDF

    HN27C101P

    Abstract: HN27C101AP-12 HN27C101AP-15 HN27C101AP-20 HN27C101AP-25 HN27C101ATT HN27C301AP HN27C301AP-12 HN27C301AP-15
    Text: HN27C101AP/AFP/ATT Series HN27C301AP/AFP Series 131072-word ✕ 8-bit CMOS One Time Electrically Programmable ROM The HN27C101AP/AFP/ATT series are 131072word ✕ 8-bit one time electrically programmable ROM. Initially, all bits of the HN27C101AP/AFP/ATT, HN27C301AP /AFP


    Original     		HN27C101AP/AFP/ATT HN27C301AP/AFP 131072-word 131072word HN27C101AP/AFP/ATT, HN27C301AP 32-pin HN27C101ATT HN27C101AP-12 HN27C101P HN27C101AP-12 HN27C101AP-15 HN27C101AP-20 HN27C101AP-25 HN27C301AP-12 HN27C301AP-15 PDF

    Untitled

    Abstract: No abstract text available
    Text: HM62W9127HB Series 131072-word x 9-bit High Speed CMOS Static RAM HITACHI ADE-203-792 Z Preliminary, Rev. 0.0 Jun. 9, 1997 Description The HM62W9127HB is an asynchronous 3.3 V operation high speed static RAM organized as 131072word x 9-bit. It realize high speed access time (25/30 ns) with employing 0.8 (Am shrink CMOS process


    OCR Scan     		HM62W9127HB 131072-word ADE-203-792 131072word 400-mil 36-pin 9127HBJP/LJP PDF

    Renesas mnos

    Abstract: No abstract text available
    Text: HN58V1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0146-0800Z (Previous ADE-203-314G (Z) Rev. 7.0) Rev. 8.00 Nov. 28. 2003 Description Renesas Technology's HN58V1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced


    Original     		HN58V1001 128-kword REJ03C0146-0800Z ADE-203-314G 131072word 128-byte Renesas mnos PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY CXK5T81OOOATM/AYM/AM/ATN/AYN -10LLX/12LLX 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5T81 OOOATM/AYM/AM/ATN/AYN is a high speed CMOS static RAM organized as 131072words by 8-bits. Special feature are low power consumption and high speed.


    OCR Scan     		CXK5T81OOOATM/AYM/AM/ATN/AYN -10LLX/12LLX 131072-word CXK5T81 131072words -10LLX -12LLX PDF

    HN58V1001

    Abstract: HN58V1001T HN58V1001FP-25 HN58V1001FP-25E HN58V1001T-25 HN58V1001T-25E
    Text: HN58V1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0146-0800Z (Previous ADE-203-314G (Z) Rev. 7.0) Rev. 8.00 Nov. 28. 2003 Description Renesas Technology's HN58V1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced


    Original     		HN58V1001 128-kword REJ03C0146-0800Z ADE-203-314G 131072word 128-byte HN58V1001T HN58V1001FP-25 HN58V1001FP-25E HN58V1001T-25 HN58V1001T-25E PDF

    581000P

    Abstract: CXK581
    Text: SONY» C X K 5 8 1 0 0 0 P / M -10L/12L/15L -10LL712LL/15LL 131072-word X 8-bit High Speed CMOS Static RAM Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this


    OCR Scan     		-10L/12L/15L -10LL712LL/15LL 131072-word CXK581000P/M CXK581000P/M-10L/1OLL 100ns CXK581000P/M-12L/12LL 120ns CXK581000P/M-15L/15LL 150ns 581000P CXK581 PDF

    Untitled

    Abstract: No abstract text available
    Text: H I T A C H I / L O G I C / A R R A Y S / N E f l E O E D • 4 4 ^ 2 0 3 0 0 l 4 7 b S HN27C301P/FP Series- T -W -13- I S 131072-word x 8-bit CMOS One Time Electrically Programmable ROM The HN27C301P Series are 131072-word x 8-bit one time electrically programmable ROM. Initially, all bits of the


    OCR Scan     		HN27C301P/FP 131072-word HN27C301P PDF

    27C301G

    Abstract: No abstract text available
    Text: HN27C301G Series 131072-word X 8-bit CMOS U .V . Erasable and Programmable ROM • FEA TU R ES • Single Power S u p p ly . + 5V ±5% • Fast H igh -R eliability Program Mode and Fast High- R eliability Page Program Mode


    OCR Scan     		HN27C301G 131072-word 27C301G PDF

    A13G

    Abstract: CXK5T81000ATN CXK5T81000AYN 5 pin A13E power supply circuit 24v ac to 3.6v dc mcoe
    Text: SONY | CXK5T81OOOATN/AYN - 1 0 L L X / 1 2 L L X 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5T81 OOOATN/AYN is a high Preliminary speed CMOS static RAM organized as 131072-words by 8 -bits. Special feature are low power consumption and


    OCR Scan     		CXK5T81OOOATN/AYN 131072-word CXK5T81 131072-words -10LLX -12LLX -10LLX 100ns A13G CXK5T81000ATN CXK5T81000AYN 5 pin A13E power supply circuit 24v ac to 3.6v dc mcoe PDF

    LE28C1001M

    Abstract: LE28C1001T TSOP32
    Text: Ordering number : EN*5129A CMOS LSI LE28C1001M, T-90/12/15 1MEG 131072 words x 8 bits Flash Memory Preliminary Overview Package Dimensions The LE28C1001M, T series ICs are 1 MEG flash memory products that feature a 131072-word × 8-bit organization and 5 V single-voltage power supply operation. CMOS


    Original     		LE28C1001M, T-90/12/15 131072-word 128-byte 3205-SOP32 LE28C1001M] LE28C1001M LE28C1001T TSOP32 PDF

    Untitled

    Abstract: No abstract text available
    Text: HM62W8128 Seríes Product Preview 131072-Word x 8-Bit High Speed CMOS Static RAM Ordering Information Description Typ e No. A ccess tim e H M 62W 8128LP-10 100 ns H M 62W 8128LP-12 120 ns H M 62W 8128LP-1O L 100 ns H M 6 2W 81 28 LP-12 L 120 ns H M 62W 8128LP-1O SL


    OCR Scan     		HM62W8128 131072-Word 8128LP-10 8128LP-12 8128LP-1O LP-12 8128LFP-10 PDF

    Untitled

    Abstract: No abstract text available
    Text: HM62W8127H Series HM62W9127H Series 131072-word x 8/9-bit High Speed CMOS Static RAM HITACHI Rev. 0.0 Dec. 1, 1995 Description The HM62W8127H/HM62W9127H is an asynchronous 3.3 V operation high speed static RAM organized as 131,072-word 8/9-bit. It realize high speed access time 30/35/45 ns with employing 0.8 (Am CMOS


    OCR Scan     		HM62W8127H HM62W9127H 131072-word HM62W8127H/HM62W9127H 072-word 400-mil 32/36-pin HM62W8127HJP/HLJP PDF

    Untitled

    Abstract: No abstract text available
    Text: HM628127HB Series 131072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-350C Z Rev. 3.0 Nov. 19, 1996 Description The HM628127HB is an asyncronous high speed static RAM organized as 128-k word x 8-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am shrink CMOS process and high speed circuit


    OCR Scan     		HM628127HB 131072-word ADE-203-350C 128-k HM628127HB 400-mil 32-pin HM628127HB-25 PDF

    628128

    Abstract: No abstract text available
    Text: A K M 628128 Series 131072-Word x 8-Bit High Speed CMOS Static RAM The A K M 628128 is a CMOS static RAM o rg anized 128- kword x 8-bit. It realizes higher density, higher p erfo rm ance and low p o w e r consum ption by em ploying 0 .8 |im H i-C M O S A K M 628128P Series


    OCR Scan     		131072-Word 628128P 6281eselect 628128 PDF

    Untitled

    Abstract: No abstract text available
    Text: HM628127HB Series 131072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-350B Z Rev. 2.0 Jun. 27, 1996 Description The HM628127HB is an asyncronous high speed static RAM organized as 128-k word X 8-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am shrink CMOS process and high speed circuit


    OCR Scan     		HM628127HB 131072-word ADE-203-350B 128-k 400-mil 32-pin HM628127HB-25 PDF

    Untitled

    Abstract: No abstract text available
    Text: HM62W8127HB Series 131072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-414 A (Z) Preliminary Rev. 0.1 Jul. 18, 1996 Description The HM62W8127HB is an asyncronous high speed static RAM organized as 128-k word X 8-bit. It realize high speed access time (25/30 ns) with employing 0.8 (Am shrink CMOS process and high speed


    OCR Scan     		HM62W8127HB 131072-word ADE-203-414 128-k 400-mil 32-pin PDF

    HM538123B Series

    Abstract: No abstract text available
    Text: HM538123B Series 131072-word x 8-bit Multiport CMOS Video RAM HITACHI ADE-203-231C Z Rev. 3.0 Apr. 24, 1995 Description The HM538123B is a 1-Mbit multiport video RAM equipped with a 128-kword 8-bit dynamic RAM and a 256-word 8-bit SAM (serial access memory). Its RAM and SAM operate independently and


    OCR Scan     		HM538123B 131072-word ADE-203-231C 128-kword 256-word 128-word HM538123B Series PDF

    M5M4V4S40CTP-12

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs SDRAM Rev. 0.3 M5M4V4S40CTP-12, -15 Feb ‘97 Preliminary 4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM PRELIMINARY Some of contents are described for general products and are subject to change without notice. DESCRIPTION FEATURES - Single 3.3v±0.3v power supply


    Original     		M5M4V4S40CTP-12, 131072-WORD 16-BIT) 83MHz 67MHz M5M4V4S40CTP-12 PDF

    32PIN

    Abstract: CXK5V81000ATM TSOP032-P-0820-A
    Text: CXK5V81000ATM -85LLX/10LLX 131072-word x 8-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description The CXK5V81000ATM is a high speed CMOS static RAM organized as 131072-words by 8-bits. A polysilicon TFT cell technology realized


    Original     		CXK5V81000ATM -85LLX/10LLX 131072-word 131072-words -85LLX -10LLX 100ns CXK5V81000ATM 32PIN TSOP032-P-0820-A PDF