Hitachi DSA002750
Abstract: No abstract text available
Text: HM62W9127HB Series 1 M High Speed SRAM 128-kword x 9-bit ADE-203-792A (Z) Preliminary Rev. 0.1 Nov. 1997 Description The HM62W9127HB is an asynchronous 3.3 V operation high speed static RAM organized as 131072word × 9-bit. It realize high speed access time (25/30 ns) with employing 0.8 µm shrink CMOS process
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HM62W9127HB
128-kword
ADE-203-792A
131072word
400-mil
36-pin
Hitachi DSA002750
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PDF
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Untitled
Abstract: No abstract text available
Text: HN58V1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0146-0800Z (Previous ADE-203-314G (Z) Rev. 7.0) Rev. 8.00 Nov. 28. 2003 Description Renesas Technology's HN58V1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced
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HN58V1001
128-kword
REJ03C0146-0800Z
ADE-203-314G
131072word
128-byte
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PDF
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Untitled
Abstract: No abstract text available
Text: HN58C1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0145-0800Z (Previous ADE-203-028G (Z) Rev.7.0) Rev. 8.00 Nov. 27. 2003 Description Renesas Technology's HN58C1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced
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HN58C1001
128-kword
REJ03C0145-0800Z
ADE-203-028G
131072word
128-byte
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PDF
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HN58C1001 Series
Abstract: HN58C1001-15 HN58C1001 HN58C1001P-15 HN58C1001FP-15 HN58C1001FP-15E HN58C1001T-15 HN58C1001T-15E REJ03C0145-0800Z
Text: HN58C1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0145-0800Z (Previous ADE-203-028G (Z) Rev.7.0) Rev. 8.00 Nov. 27. 2003 Description Renesas Technology's HN58C1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced
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HN58C1001
128-kword
REJ03C0145-0800Z
ADE-203-028G
131072word
128-byte
HN58C1001 Series
HN58C1001-15
HN58C1001P-15
HN58C1001FP-15
HN58C1001FP-15E
HN58C1001T-15
HN58C1001T-15E
REJ03C0145-0800Z
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PDF
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Renesas mnos
Abstract: No abstract text available
Text: HN58C1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0145-0800Z (Previous ADE-203-028G (Z) Rev.7.0) Rev. 8.00 Nov. 27. 2003 Description Renesas Technology's HN58C1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced
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Original
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HN58C1001
128-kword
REJ03C0145-0800Z
ADE-203-028G
131072word
128-byte
Renesas mnos
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PDF
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HN27C101P
Abstract: HN27C101AP-12 HN27C101AP-15 HN27C101AP-20 HN27C101AP-25 HN27C101ATT HN27C301AP HN27C301AP-12 HN27C301AP-15
Text: HN27C101AP/AFP/ATT Series HN27C301AP/AFP Series 131072-word ✕ 8-bit CMOS One Time Electrically Programmable ROM The HN27C101AP/AFP/ATT series are 131072word ✕ 8-bit one time electrically programmable ROM. Initially, all bits of the HN27C101AP/AFP/ATT, HN27C301AP /AFP
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HN27C101AP/AFP/ATT
HN27C301AP/AFP
131072-word
131072word
HN27C101AP/AFP/ATT,
HN27C301AP
32-pin
HN27C101ATT
HN27C101AP-12
HN27C101P
HN27C101AP-12
HN27C101AP-15
HN27C101AP-20
HN27C101AP-25
HN27C301AP-12
HN27C301AP-15
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PDF
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Renesas mnos
Abstract: No abstract text available
Text: HN58V1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0146-0800Z (Previous ADE-203-314G (Z) Rev. 7.0) Rev. 8.00 Nov. 28. 2003 Description Renesas Technology's HN58V1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced
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Original
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HN58V1001
128-kword
REJ03C0146-0800Z
ADE-203-314G
131072word
128-byte
Renesas mnos
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PDF
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HN58V1001
Abstract: HN58V1001T HN58V1001FP-25 HN58V1001FP-25E HN58V1001T-25 HN58V1001T-25E
Text: HN58V1001 Series 1M EEPROM 128-kword x 8-bit Ready/Busy and RES function REJ03C0146-0800Z (Previous ADE-203-314G (Z) Rev. 7.0) Rev. 8.00 Nov. 28. 2003 Description Renesas Technology's HN58V1001 is an electrically erasable and programmable ROM organized as 131072word × 8-bit. It has realized high speed, low power consumption and high reliability by employing advanced
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Original
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HN58V1001
128-kword
REJ03C0146-0800Z
ADE-203-314G
131072word
128-byte
HN58V1001T
HN58V1001FP-25
HN58V1001FP-25E
HN58V1001T-25
HN58V1001T-25E
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DP-32
Abstract: HN58C1001 HN58C1001FP-15 HN58C1001P-15 HN58C1001T HN58C1001T-15
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
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D-85622
DP-32
HN58C1001
HN58C1001FP-15
HN58C1001P-15
HN58C1001T
HN58C1001T-15
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PDF
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LE28C1001M
Abstract: LE28C1001T TSOP32
Text: Ordering number : EN*5129A CMOS LSI LE28C1001M, T-90/12/15 1MEG 131072 words x 8 bits Flash Memory Preliminary Overview Package Dimensions The LE28C1001M, T series ICs are 1 MEG flash memory products that feature a 131072-word × 8-bit organization and 5 V single-voltage power supply operation. CMOS
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LE28C1001M,
T-90/12/15
131072-word
128-byte
3205-SOP32
LE28C1001M]
LE28C1001M
LE28C1001T
TSOP32
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PDF
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M5M4V4S40CTP-12
Abstract: No abstract text available
Text: MITSUBISHI LSIs SDRAM Rev. 0.3 M5M4V4S40CTP-12, -15 Feb ‘97 Preliminary 4M (2-BANK x 131072-WORD x 16-BIT) Synchronous DRAM PRELIMINARY Some of contents are described for general products and are subject to change without notice. DESCRIPTION FEATURES - Single 3.3v±0.3v power supply
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M5M4V4S40CTP-12,
131072-WORD
16-BIT)
83MHz
67MHz
M5M4V4S40CTP-12
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PDF
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32PIN
Abstract: CXK5V81000ATM TSOP032-P-0820-A
Text: CXK5V81000ATM -85LLX/10LLX 131072-word x 8-bit High Speed CMOS Static RAM For the availability of this product, please contact the sales office. Description The CXK5V81000ATM is a high speed CMOS static RAM organized as 131072-words by 8-bits. A polysilicon TFT cell technology realized
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CXK5V81000ATM
-85LLX/10LLX
131072-word
131072-words
-85LLX
-10LLX
100ns
CXK5V81000ATM
32PIN
TSOP032-P-0820-A
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PDF
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Untitled
Abstract: No abstract text available
Text: HM62W9127HB Series 131072-word x 9-bit High Speed CMOS Static RAM HITACHI ADE-203-792 Z Preliminary, Rev. 0.0 Jun. 9, 1997 Description The HM62W9127HB is an asynchronous 3.3 V operation high speed static RAM organized as 131072word x 9-bit. It realize high speed access time (25/30 ns) with employing 0.8 (Am shrink CMOS process
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OCR Scan
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HM62W9127HB
131072-word
ADE-203-792
131072word
400-mil
36-pin
9127HBJP/LJP
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PDF
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Untitled
Abstract: No abstract text available
Text: SONY CXK5T81OOOATM/AYM/AM/ATN/AYN -10LLX/12LLX 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5T81 OOOATM/AYM/AM/ATN/AYN is a high speed CMOS static RAM organized as 131072words by 8-bits. Special feature are low power consumption and high speed.
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CXK5T81OOOATM/AYM/AM/ATN/AYN
-10LLX/12LLX
131072-word
CXK5T81
131072words
-10LLX
-12LLX
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PDF
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Untitled
Abstract: No abstract text available
Text: H I T A C H I / L O G I C / A R R A Y S / N E f l E O E D • 4 4 ^ 2 0 3 0 0 l 4 7 b S HN27C301P/FP Series- T -W -13- I S 131072-word x 8-bit CMOS One Time Electrically Programmable ROM The HN27C301P Series are 131072-word x 8-bit one time electrically programmable ROM. Initially, all bits of the
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HN27C301P/FP
131072-word
HN27C301P
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PDF
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27C301G
Abstract: No abstract text available
Text: HN27C301G Series 131072-word X 8-bit CMOS U .V . Erasable and Programmable ROM • FEA TU R ES • Single Power S u p p ly . + 5V ±5% • Fast H igh -R eliability Program Mode and Fast High- R eliability Page Program Mode
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HN27C301G
131072-word
27C301G
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PDF
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A13G
Abstract: CXK5T81000ATN CXK5T81000AYN 5 pin A13E power supply circuit 24v ac to 3.6v dc mcoe
Text: SONY | CXK5T81OOOATN/AYN - 1 0 L L X / 1 2 L L X 131072-word x 8-bit High Speed CMOS Static RAM Description The CXK5T81 OOOATN/AYN is a high Preliminary speed CMOS static RAM organized as 131072-words by 8 -bits. Special feature are low power consumption and
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CXK5T81OOOATN/AYN
131072-word
CXK5T81
131072-words
-10LLX
-12LLX
-10LLX
100ns
A13G
CXK5T81000ATN
CXK5T81000AYN
5 pin A13E
power supply circuit 24v ac to 3.6v dc
mcoe
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PDF
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Untitled
Abstract: No abstract text available
Text: HM62W8128 Seríes Product Preview 131072-Word x 8-Bit High Speed CMOS Static RAM Ordering Information Description Typ e No. A ccess tim e H M 62W 8128LP-10 100 ns H M 62W 8128LP-12 120 ns H M 62W 8128LP-1O L 100 ns H M 6 2W 81 28 LP-12 L 120 ns H M 62W 8128LP-1O SL
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HM62W8128
131072-Word
8128LP-10
8128LP-12
8128LP-1O
LP-12
8128LFP-10
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PDF
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Untitled
Abstract: No abstract text available
Text: HM62W8127H Series HM62W9127H Series 131072-word x 8/9-bit High Speed CMOS Static RAM HITACHI Rev. 0.0 Dec. 1, 1995 Description The HM62W8127H/HM62W9127H is an asynchronous 3.3 V operation high speed static RAM organized as 131,072-word 8/9-bit. It realize high speed access time 30/35/45 ns with employing 0.8 (Am CMOS
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HM62W8127H
HM62W9127H
131072-word
HM62W8127H/HM62W9127H
072-word
400-mil
32/36-pin
HM62W8127HJP/HLJP
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PDF
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Untitled
Abstract: No abstract text available
Text: HM628127HB Series 131072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-350C Z Rev. 3.0 Nov. 19, 1996 Description The HM628127HB is an asyncronous high speed static RAM organized as 128-k word x 8-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am shrink CMOS process and high speed circuit
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OCR Scan
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HM628127HB
131072-word
ADE-203-350C
128-k
HM628127HB
400-mil
32-pin
HM628127HB-25
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PDF
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628128
Abstract: No abstract text available
Text: A K M 628128 Series 131072-Word x 8-Bit High Speed CMOS Static RAM The A K M 628128 is a CMOS static RAM o rg anized 128- kword x 8-bit. It realizes higher density, higher p erfo rm ance and low p o w e r consum ption by em ploying 0 .8 |im H i-C M O S A K M 628128P Series
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OCR Scan
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131072-Word
628128P
6281eselect
628128
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PDF
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Untitled
Abstract: No abstract text available
Text: HM628127HB Series 131072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-350B Z Rev. 2.0 Jun. 27, 1996 Description The HM628127HB is an asyncronous high speed static RAM organized as 128-k word X 8-bit. It realize high speed access time (15/20 ns) with employing 0.8 (Am shrink CMOS process and high speed circuit
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OCR Scan
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HM628127HB
131072-word
ADE-203-350B
128-k
400-mil
32-pin
HM628127HB-25
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PDF
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Untitled
Abstract: No abstract text available
Text: HM62W8127HB Series 131072-word x 8-bit High Speed CMOS Static RAM HITACHI ADE-203-414 A (Z) Preliminary Rev. 0.1 Jul. 18, 1996 Description The HM62W8127HB is an asyncronous high speed static RAM organized as 128-k word X 8-bit. It realize high speed access time (25/30 ns) with employing 0.8 (Am shrink CMOS process and high speed
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OCR Scan
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HM62W8127HB
131072-word
ADE-203-414
128-k
400-mil
32-pin
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PDF
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HM538123B Series
Abstract: No abstract text available
Text: HM538123B Series 131072-word x 8-bit Multiport CMOS Video RAM HITACHI ADE-203-231C Z Rev. 3.0 Apr. 24, 1995 Description The HM538123B is a 1-Mbit multiport video RAM equipped with a 128-kword 8-bit dynamic RAM and a 256-word 8-bit SAM (serial access memory). Its RAM and SAM operate independently and
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HM538123B
131072-word
ADE-203-231C
128-kword
256-word
128-word
HM538123B Series
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PDF
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