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    1310NM 2MW NEC Search Results

    1310NM 2MW NEC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    D12320VTE20V Renesas Electronics Corporation Microcontrollers for General Purpose System Control Applications (Non Promotion), TFQFP, / Visit Renesas Electronics Corporation
    D12324SVF25V Renesas Electronics Corporation Microcontrollers for General Purpose System Control Applications (Non Promotion), FQFP, /Tray Visit Renesas Electronics Corporation
    D12373RVFQ33V Renesas Electronics Corporation Microcontrollers for General Purpose System Control Applications (Non Promotion), LQFP, /Tray Visit Renesas Electronics Corporation
    D12670VFC33V Renesas Electronics Corporation High-end Microcontrollers for Automotive Control and Factory Automation Applications (Non Promotion), FQFP, /Tray Visit Renesas Electronics Corporation
    DF2111BVT10BV Renesas Electronics Corporation Microcontrollers for Office Equipment Applications (Non Promotion) Visit Renesas Electronics Corporation

    1310NM 2MW NEC Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    field transistor 1550nm

    Abstract: FAH0477
    Text: FAH0477 Series Rev.3: [Mar.2005] 1310nm/2mW, 1550nm/2mW Dual FP Laser Diode Modules for OTDR Data Sheet Preliminary FAH0477 1. DESCRIPTION The FAH0477 consists of a 1310nm & 1550nm FP- LD, a single-mode fiber and a SC/PC connector and a dual LD package. These modules are dual LD Modules for OTDR applications.


    Original     		FAH0477 1310nm/2mW, 1550nm/2mW FAH0477 1310nm 1550nm 1310nm) 1550nm) CDLE04-22 field transistor 1550nm PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.2 March 11, 2002 OD-8311N 1310nm SMT-LD Module 2mW FEATURES n n n n n n n Surface Mountable by I.R. Reflow Solder. Small Size Flat Ceramic Package : 7.6 x 12.7 x 3 mm. Optical Output Power : Pf = 2 mW. Central Wavelength : λc = 1310 nm. Wide Operating Temperature Range : − 40 to + 85°C.


    Original     		OD-8311N 1310nm SW1-290 PDF

    laser diode DVD 300mw

    Abstract: MF-2500FXC 785nm mitsubishi mitsubishi ic. 5201 DVD LENS circuit diagrams 1550nm Laser Diode butterfly laser diode DVD 100mw D4030 FU-423SLD laser diode for optical communication
    Text: OPTICAL DEVICES Features Great Variety of Product Line-up Wavelength: 650 nm to 1600 nm Product form: TO-CAN, Chip-on-Carrier, Module High Speed, High Power, High Performance Bitrate to 40 Gbps High Power to 300 mW Application Map 1 Technology Trend 3 Laser Diode for Information


    Original     		H-CP606-E laser diode DVD 300mw MF-2500FXC 785nm mitsubishi mitsubishi ic. 5201 DVD LENS circuit diagrams 1550nm Laser Diode butterfly laser diode DVD 100mw D4030 FU-423SLD laser diode for optical communication PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.2 March 11, 2002 OD-8310N 1310nm SMT-LD Module 1mW FEATURES n n n n n n n Surface Mountable by I.R. Reflow Solder. Small Size Flat Ceramic Package : 7.6 x 12.7 x 3 mm. Optical Output Power : Pf = 1 mW. Central Wavelength : λc = 1310 nm. Wide Operating Temperature Range : − 40 to + 85°C.


    Original     		OD-8310N 1310nm SW1-290 PDF

    FU-456RDF

    Abstract: ML9XX46 laser diode DVD 300mw FU-357RPA 650nm laser diode 200mw ML7XX46 APD 10gbps 1550nm Laser Diode with butterfly pin package sirio FU-68SDF-V3M series
    Text: OPTICAL DEVICES Features Great Variety of Product Line-up Wavelength: 650nm to 1600nm Product form: TO-CAN, Chip-on-Carrier, Module High Speed, High Power, High Performance Bitrate to 40 Gbps High Power to 350mW Application Map 1 Technology Trend 3 Laser Diode for Information


    Original     		350mW 650nm 1600nm H-CT606-J KI-0807 FU-456RDF ML9XX46 laser diode DVD 300mw FU-357RPA 650nm laser diode 200mw ML7XX46 APD 10gbps 1550nm Laser Diode with butterfly pin package sirio FU-68SDF-V3M series PDF

    650nm laser diode 200mw

    Abstract: FU-456RDF laser diode DVD 300mw FU-357RPP laser FP TO-CAN for SFP SIRIO FU-357RPA laser DFB 1550nm 10mW PD8XX10 ML7XX46
    Text: OPTICAL DEVICES Features Great Variety of Product Line-up Wavelength: 650nm to 1600nm Product form: TO-CAN, Chip-on-Carrier, Module High Speed, High Power, High Performance Bitrate to 40 Gbps High Power to 350mW Application Map 1 Technology Trend 3 Laser Diode for Information


    Original     		350mW 650nm 1600nm H-CR606-G KI-0608 650nm laser diode 200mw FU-456RDF laser diode DVD 300mw FU-357RPP laser FP TO-CAN for SFP SIRIO FU-357RPA laser DFB 1550nm 10mW PD8XX10 ML7XX46 PDF

    C42V5964

    Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
    Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION


    Original     		M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 PDF

    dfb activation energy

    Abstract: "Hitachi Kodaira Semiconductor" EA-DFB 1455B HF8807 1310nm DFB BH LASER HL6348MG opnext l laser diode DVD 100mw HL6336G
    Text: Optodevice Data Book ODE-408-001I Rev.9 Mar. 2003 Opnext Japan, Inc. Safety Considerations Be sure to avoid direct exposure of human eyes to high power laser beams emitted from laser diodes. Even though barely visible and/or invisible to the human eye, they can be quite harmful. In particular, avoid looking directly into a


    Original     		ODE-408-001I HL1570AF HL1569AF dfb activation energy "Hitachi Kodaira Semiconductor" EA-DFB 1455B HF8807 1310nm DFB BH LASER HL6348MG opnext l laser diode DVD 100mw HL6336G PDF

    upc 1185 h

    Abstract: mobis Delay linear sweep generator using 555 timer Anritsu ML524B operation manual for vip tracking gsm and gps technology 26UA42 MU909014A1 nokia 2700 classic circuit diagram MF2400C MA8120E
    Text: Outline of Anritsu Corporation p.2 Quality, Reliability Assurance System, and Effort for Environmental Considerations p.3 How to Use This Catalog p.4 Sales, Shipping, and Service Information p.5 Sales Network p.6 Index p.7 Model Number Index p.9 New Products Descriptions


    Original     		AS3B119GM10M AS5B125EM50M AS6B118GM50M 1310nm) 1550nm) upc 1185 h mobis Delay linear sweep generator using 555 timer Anritsu ML524B operation manual for vip tracking gsm and gps technology 26UA42 MU909014A1 nokia 2700 classic circuit diagram MF2400C MA8120E PDF

    Untitled

    Abstract: No abstract text available
    Text: NEC O D - 8 3 4 5 1310m F P - L D M o d u l e 2mW OD-8345 is a high perform ance 1310nm M ultiple Q uantum Well (MQW) LD module. This device can achieve stable operation over wide tem perature range of -40 to +85 “C . An InGaAs PIN m onitor photodiode is


    OCR Scan     		1310m OD-8345 1310nm 1310nm OD-8345- OD-S328B. OD-S328B) bM275E5 PDF

    OD-S559

    Abstract: 1310nm 2mW nec
    Text: I NEC OD - S 5 5 9 131 Onm D F B - L D w i t h b u i l t - i n Mo d u 1 e o p t i c a l FEATURES • Operating frequency range • Distortion i s o l a t o r f=5MHz to 200MHz IM D2i-45dBc IMD35-65dBc RINS-145dB/Hz Pf=2.0mW A=1310nm Tc=-20 to 85°C • Noise


    OCR Scan     		200MHz IMD2i-45dBc IMD35-65dBc RINS-145dB/Hz 1310nm 85MHz, 25MHz bM27S25 OD-S559 OD-S559 1310nm 2mW nec PDF

    OD-S559

    Abstract: 1310nm 2mW nec
    Text: NEC 1 OD - S 5 5 9 131 O n m w i t h D F B - LD b u i l t - i n Mo d u 1 e o p t i c a l FEATURES • Operating frequency range • Distortion i s o l a t o r f=5MHz to 200MHz IM D2i-45dBc IMD35-65dBc RINS-145dB/Hz Pf=2.0mW A=1310nm Tc=-20 to 85°C • Noise


    OCR Scan     		200MHz IMD2i-45dBc IMD35-65dBc -145dB/Hz 1310nm 13MHz, 19MHz, 32NHz 25MHz OD-S559 1310nm 2mW nec PDF

    Untitled

    Abstract: No abstract text available
    Text: NEC n n - R a i i 1310m F P - L D M o d u l e O.lif OD-8344 is a high performance 13l0nm Multiple Quantum Well (MQW) LD module. This device can achieve stable operation over wide temperature range of -40 to +85 “C . An InGaAs PIN monitor photodiode is


    OCR Scan     		OD-8344 13l0nm 1310nm OD-8344- OD-S328B. OD-S328B) PDF