Semiconductor 1346 transistor
Abstract: No abstract text available
Text: ON Semiconductort MPSW92 One Watt High Voltage Transistor ON Semiconductor Preferred Device PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −300 Vdc Collector −Base Voltage VCBO −300 Vdc Emitter −Base Voltage
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MPSW92
O-226AE)
Semiconductor 1346 transistor
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Untitled
Abstract: No abstract text available
Text: Product Bulletin OPI120TX/TXV September 1996 Hi-Rel Optically Coupled Isolator Types OPI120TX, OPI120TXV Features Absolute Maximum Ratings TA = 25o C unless otherwise noted • High current transfer ratio • 15 kV electrical isolation • Base lead provided for conventional
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OPI120TX/TXV
OPI120TX,
OPI120TXV
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3-bit counter
Abstract: MAX3664 MAX3675 MAX3680 MAX3680EAI
Text: 19-1210; Rev 1; 11/00 KIT ATION EVALU E L B A AVAIL +3.3V, 622Mbps, SDH/SONET 1:8 Deserializer with TTL Outputs _Features ♦ Single +3.3V Supply ♦ 622Mbps Serial to 77Mbps Parallel Conversion ♦ 165mW Power ♦ Synchronization Input for Data Realignment and
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622Mbps,
622Mbps
77Mbps
165mW
MAX3680EAI
MAX3680
3-bit counter
MAX3664
MAX3675
MAX3680
MAX3680EAI
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cross PD6
Abstract: 3-bit counter 3 bit counter shift register ttl
Text: 19-1210; Rev 0; 3/97 KIT ATION EVALU LE B A IL A AV +3.3V, 622Mbps, SDH/SONET 1:8 Deserializer with TTL Outputs _Features The MAX3680 deserializer is ideal for converting 622Mbps serial data to 8-bit-wide, 77Mbps parallel data in ATM and SDH/SONET applications. Operating
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622Mbps,
622Mbps
77Mbps
165mW
MAX3680
MAX3680
cross PD6
3-bit counter
3 bit counter
shift register ttl
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3-bit counter
Abstract: MAX3664 MAX3675 MAX3680 MAX3680EAI
Text: 19-1210; Rev 2; 7/04 KIT ATION EVALU E L B A AVAIL +3.3V, 622Mbps, SDH/SONET 1:8 Deserializer with TTL Outputs _Features ♦ Single +3.3V Supply _Applications _Ordering Information ♦ 622Mbps Serial to 77Mbps Parallel Conversion
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Original
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622Mbps,
622Mbps
77Mbps
165mW
MAX3680EAI
MAX3680EAI+
MO150.
3-bit counter
MAX3664
MAX3675
MAX3680
MAX3680EAI
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFG135A NPN Silicon RF Transistor • For low-distortion broadband output amplifier stages in antenna and telecommunications systems up to 2 GHz at collector currents from 70mA to 130mA • Power amplifiers for DECT and PCN systems • Integrated emitter ballast resistor
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BFG135A
130mA
BFG135A
Q62702-F1322
OT-223
GlE17b4
900MHz
0S35bOS
D1217b5
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FR180
Abstract: BFR180
Text: SIEMENS B F R 180 NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • f j = 7GH;: F = 2.1 dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!
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900MHz
Q62702-F1296
OT-23
FR180
BFR180
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a06 amplifier
Abstract: a06 transistor a06 transistor 165 MPS-A05 MPS-A06
Text: r— i Silicon Transistors I I B I MPS-A05 MPS-A06 The MPS-A05 and MPS-A06 are silicon planar epitaxial passivated NPN tran sistors designed for general purpose audio amplifier applications. a b s o lu te m a x im u m r a t i n g s : TA = 25°c unless otherwise specified
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MPS-A05
MPS-A06
MPS-A05
MPS-A06
100mA,
100mA)
300/Usee.
a06 amplifier
a06 transistor
a06 transistor 165
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CBC 184 transistor
Abstract: CBC 184 c transistor 2SA753 CBC 184 b transistor K 1357 t11g UPS 1353 10PS 2SA730 2SA731
Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English
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175MHz,
700MHz,
7c-25
/-700MHz,
2SA83B
CBC 184 transistor
CBC 184 c transistor
2SA753
CBC 184 b transistor
K 1357
t11g
UPS 1353
10PS
2SA730
2SA731
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1348 transistor
Abstract: 1346 transistor transistor 1346
Text: Philips Semiconductors Product specification N-channel enhancement mode MOS transistor FEATURES PHN103 PINNING - SOT96-1 S08 • High-speed switching PIN SYMBOL • No secondary breakdown 1 n.c • Very low on-state resistance. 2 s source 3 s source APPLICATIONS
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PHN103
OT96-1
1348 transistor
1346 transistor
transistor 1346
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BU 103t transistor
Abstract: IC LM234 134H-6 diode cross reference 1N457 lm3341 lm 234 diode
Text: Semiconductor May 1998 LM134/LM234/LM334 3-Terminal Adjustable Current Sources General Description LM 234-3 and LM 134-6/LM 234-6 are specified as true te m perature sensors with guaranteed initial accuracy of ±3°C and ±6°C , respectively. These devices are ideal in rem ote
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LM134/LM234/LM334
134/LM
234/LM
BU 103t transistor
IC LM234
134H-6
diode cross reference 1N457
lm3341
lm 234 diode
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cm 45-12
Abstract: Mrf621 transistor 1346 420 NPN Silicon RF Transistor VK200 vk200 rf choke
Text: MRF621 SILICON T h e R F L in e 45 W - 470 M Hz "CONTROLLED Q" RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . . .d es ig n e d fo r 1 2 .5 V o l t U H F large-signal a m p lifie r a p p lic a tio n s in industrial and c o m m e rc ia l
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MRF621
cm 45-12
Mrf621
transistor 1346
420 NPN Silicon RF Transistor
VK200
vk200 rf choke
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OP235TX
Abstract: OP235TXV OP804TX OP804TXV OPI120TX OPI120TXV
Text: 0 . OPTEK Product Bulletin OPI120TX/TXV September 1996 Hi-Rel Optically Coupled Isolator Types OPI120TX, OPI120TXV Features Absolute Maximum Ratings T a = 2 5 ° C unless otherw ise noted • High current transfer ratio • 15 kV electrical isolation • Base lead provided for conventional
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OPI120TX/TXV
OPI120TX,
OPI120TXV
MIL-PRF-19500
OPI120TX
OPI120TXV
OP235TX
OP235TXV)
OP804TX
OP804TXV)
OP235TXV
OP804TXV
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Untitled
Abstract: No abstract text available
Text: 0 .O P IE K Product Bulletin OPI120TX/TXV September 1996 Hi-Rel Optically Coupled Isolator Types OPI120TX, OPI120TXV Features Absolute Maximum Ratings T a = 25° C unless otherwise noted • High current transfer ratio • 15 kV electrical isolation • Base lead provided for conventional
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PDF
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OPI120TX/TXV
OPI120TX,
OPI120TXV
MIL-PRF-19500
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Untitled
Abstract: No abstract text available
Text: 0 . OPTEK P roduct B ulletin OPI120TX/TXV Septem ber 1996 Hi-Rel Optically Coupled Isolator Types OPI120TX, OPM2QTXV Features A b so lu te M axim um R atings Ta = 25° C unless otherwise noted • High current transfer ratio • 15 kV electrical isolation
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OPI120TX/TXV
OPI120TX,
MIL-PRF-19500
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Untitled
Abstract: No abstract text available
Text: AScn“ t'rg',Comp“” /UA78M15QB 3-Terminal Positive Voltage Regulator MIL-STD-883 July 1986— Rev 25 Aerospace and Defense Data Sheet Linear Products Connection Diagram 3-Lead TO-39 Can Top View Description The /jA 78M15QB 3-Terminal Medium Current Positive Volt
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/UA78M15QB
MIL-STD-883
78M15QB
JUA78M15QB
EQ006W
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eltec 406
Abstract: infrared pyroelectric, gas DETECTOR FLAME eltec eltec 406 me BOX9610 Pyroelectric Detectors pyroelectric TO-5 ELTEC INSTRUMENTS Light dependent resistors
Text: Model 40612 Pyroelectric IR Detector with Internal JFET and Load/Feedback Resistor E L -T E C Manufactured under one or more of the following U.S. patents: 3,839,640 - 4,218,620 - 4,326,663 - 4,384,207 - 4,437,003 - 4,441,023 - 4,523,095 Model 40612 consists of a single
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FormDS40612
3HTM041
eltec 406
infrared pyroelectric, gas
DETECTOR FLAME
eltec
eltec 406 me
BOX9610
Pyroelectric Detectors
pyroelectric TO-5
ELTEC INSTRUMENTS
Light dependent resistors
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eltec 406
Abstract: DETECTOR FLAME MOTION DETECTOR opamp "Pyroelectric Detector" eltec eltec 406 me eltec ELECTROLYTIC CAPACITOR JFET 104 flame detector J-FET TRANSISTOR
Text: Model 40612 Pyroelectric IR Detector with Internal JFET and Load/Feedback Resistor E L -T E C Manufactured under one or more of the following U.S. patents: 3,839,640 - 4,218,620 - 4,326,663 - 4,384,207 - 4,437,003 - 4,441,023 - 4,523,095 Model 40612 consists of a single
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FormDS40612
3HTM041
eltec 406
DETECTOR FLAME
MOTION DETECTOR opamp
"Pyroelectric Detector"
eltec
eltec 406 me
eltec ELECTROLYTIC CAPACITOR
JFET 104
flame detector
J-FET TRANSISTOR
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a78m15
Abstract: Sink11
Text: FAIRCHILD A S chlum berger Com pany /UA78M15QB 3-Terminal Positive Voltage Regulator MIL-STD-883 July 1986— Rev 2s A erospace and Defense Data Sheet Linear Products D escription C o nn ection Diagram 3 -L ead T O -39 Can T o p View The /¿A78M15QB 3-Terminal Medium Current Positive V olt
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/UA78M15QB
MIL-STD-883
A78M15QB
A78M15QB
a78m15
Sink11
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2N6052
Abstract: No abstract text available
Text: SEMTECH CORP 5ÛE D m 613^13=1 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK 00032^0 T2b 2N6051, 2N6052, 2N6058 2N6059 ‘ MAXIMUM RATINGS PARAM ETER SYM BO L C o lle cto r E m itter Voltage Vdc 80 2N6052, 2N6059 100 C o lle cto r B ase Voltage Vdc VCBO 80 2 N 6 0 5 1 , 2N6058
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2N6051,
2N6052,
2N6058
2N6059
00Q33D2
2N6058,
2N6052
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BUP 312
Abstract: buz 91 f BUP 303 IGBT DIODE BUZ 537 BUP 203
Text: SIEMENS Typenübersicht Selection Guide Leistungstransistoren Typ Type • BUZ 10 ■ BUZ 10L ■ BUZ10S2 ■ BUZ 11 ■ BUZ11A ■ BUZ11S2 ■ BUZ 11 AL ■ BUZ 12 ■ BUZ12A ■ BUZ 12AL BUZ 20 BUZ 21 BUZ 21L BUZ 22 BUZ 30A BUZ 31 BUZ 31L BUZ 32 BUZ 40B
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BUZ10S2
BUZ11A
BUZ11S2
BUZ12A
O-220
O-218
BUP 312
buz 91 f
BUP 303 IGBT
DIODE BUZ 537
BUP 203
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A571 TRANSISTOR
Abstract: BATTERY LEVEL INDICATOR CT918 transistor 1247 IC NE 555 UMA1018 UMA1000LT ic 1 ne 555 All Microphone SA612
Text: P hilips Sem iconductors Selection guide Alphanumerical index ALPHANUMERIC INDEX PAGE P 80C552/(P)83C552 single-chip 8-bit microcontroller 49 (P)80CL31/(P)80CL51 low-voltage single-chip 8-bit microcontroller 54 (P)80CL410/(P)83CL410 low-voltage/low-power single chip 8-bit microcontroller with l2C-bus
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80C552/
83C552
80CL31/
80CL51
80CL410/
83CL410
80CL580/
83CL580
83/87L51
83C654
A571 TRANSISTOR
BATTERY LEVEL INDICATOR
CT918
transistor 1247
IC NE 555
UMA1018
UMA1000LT
ic 1 ne 555
All Microphone
SA612
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CT914
Abstract: philips audio amplifier ic guide UMA1000LT P-Channel RF Amplifier Philips Semiconductors Selection Guide All Microphone CT918 "true Logarithmic Amplifier" TDA7050 bs107 transistor
Text: Philips Semiconductors Selection guide Functional index PAGE SPEECH/TRANSMISSION CIRCUITS PCA1070 programmable analog CMOS transmission IC TEA1060/1061 versatile telephone transmission circuits with dialler interface; 304 TEA1060: low-impedance input for dynamic and magnetic microphones;
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PCA1070
TEA1060/1061
TEA1060:
TEA1061:
TEA1062/A
TEA1064A
TEA1064B
TEA1065
TEA1066T
TEA1067
CT914
philips audio amplifier ic guide
UMA1000LT
P-Channel RF Amplifier
Philips Semiconductors Selection Guide
All Microphone
CT918
"true Logarithmic Amplifier"
TDA7050
bs107 transistor
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LM292
Abstract: No abstract text available
Text: LM392/LM2924 Low Power Operational Amplifier/Voltage Comparator General Description Features The LM392 series consists of 2 independent building block circuits. One is a high gain, internally frequency compensat ed operational amplifier, and the other is a precision voltage
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LM392/LM2924
LM392/LM2924
LM392
LM193
LM158
LM292
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