1351 NPN TRANSISTOR
Abstract: LT1351 LT1351CMS8 LT1351CN8 LT1351CS8 LT1354 LT1365 transistor 1351 Transistor g29
Text: LT1351 250µA, 3MHz, 200V/µs Operational Amplifier U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1351 is a low power, high speed, high slew rate operational amplifier with outstanding AC and DC performance. The LT1351 features lower supply current, lower
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LT1351
LT1351
ch351
LTC201
2000pF
20nA/2000pF
10mV/ms
8pC/2000pF
1351 NPN TRANSISTOR
LT1351CMS8
LT1351CN8
LT1351CS8
LT1354
LT1365
transistor 1351
Transistor g29
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Untitled
Abstract: No abstract text available
Text: LT1351 250µA, 3MHz, 200V/µs Operational Amplifier U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1351 is a low power, high speed, high slew rate operational amplifier with outstanding AC and DC performance. The LT1351 features lower supply current, lower
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Original
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LT1351
LT1351
LTC201
2000pF
20nA/2000pF
10mV/ms
8pC/2000pF
LT1352/LT1353
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LT1351
Abstract: LT1351CN8 LT1351CS8 LT1354 LT1365 transistor 1351
Text: LT1351 250µA, 3MHz, 200V/µs Operational Amplifier U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1351 is a low power, high speed, high slew rate operational amplifier with outstanding AC and DC performance. The LT1351 features lower supply current, lower
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Original
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LT1351
LT1351
254mm)
LT1352/LT1353
LT1354
12MHz,
LT1351CN8
LT1351CS8
LT1354
LT1365
transistor 1351
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Untitled
Abstract: No abstract text available
Text: OPTEK Product Bulletin OPI150TX September 1996 Optically Coupled Isolators Types OPI150TX, OPI150TXV Features • High current transfer ratio • 50kV electrical isolation • Base contact lead for conventional transistor biasing • Components processed to Optek’s
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OPI150TX
OPI150TX,
OPI150TXV
MIL-PRF-19500
00Q31ba
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Untitled
Abstract: No abstract text available
Text: LT1351 r j u n e TECH NO LO G Y 250|nA, 3MHz, 200V/p.s O p e ra tio n a l A m p lifier F€OTUR€S DCSCRIPTIOfl • 3MHz Gain Bandwidth ■ 200V/jis Slew Rate ■ 250fiA Supply Current ■ C-Load Op Amp Drives All Capacitive Loads ■ Unity-Gain Stable
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LT1351
00V/p
LT1351
152mm)
254mm)
LT1352/LT1353
LT1354
250nA,
00V/ps
12MHz,
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Untitled
Abstract: No abstract text available
Text: r r u r LT135.1 m TECHNOLOGY 250|liA, 3MHz, 200V/fis Operational Amplifier F€ATUR€S DCSCRIPTIOn • 3MHz Gain Bandwidth ■ 200V/jas Slew Rate ■ 250|oA Supply Current The LT 1351 is a low power, high speed, high slew rate operational amplifier with outstanding AC and DC perfor
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LT135
00V/fis
00V/jas
LT1351
110pF
1N4148
SST177
551fl4bA
LT1351
20nA/2000pF
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Untitled
Abstract: No abstract text available
Text: r r u n m TECHNOLOGY _ LT1351 250nA, 3MHz, 200V/|as O p eration al Am plifier F€RTUR€S DCSCRIPTIOn • 3MHz Gain Bandwidth ■ 200V/|as Slew Rate ■ 250,uA Supply Current ■ Available in Tiny MSOP Package The LT 1351 is a low power, high speed, high slew rate
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OCR Scan
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LT1351
250nA,
LT1351
20nA/2000pF
10mV/ms
8pC/2000pF
LT1352/LT1353
00V/ns
LT1354
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PDF
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OP235TX
Abstract: OP235TXV OP804TX OP804TXV OPI150TX OPI150TXV
Text: 0 P roduct B ulletin OPI150TX Septem ber 1996 OPIEK Optically Coupled Isolators Types OPI15QTX, OPI150TXV • High current transfer ratio • 50kV electrical isolation • Base contact lead for conventional transistor biasing • Components processed to Optek’s
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OPI150TX
OPI150TX,
OPI150TXV
MIL-PRF-19500
OPI150TXV
OP235TX
OP235TXV)
OP804TX
OP804TXV)
OP235TXV
OP804TXV
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ST25C
Abstract: st 25 c transistor electronic ballast for T12 but54 BVW32 transistor a09 transistor 800V 1A Scans-0014927 A08A 14TI
Text: TELEFUNKEN ELECTRONIC 17E D • 6 ti S 0 0 cib OOORSEi BUT 54 T m O J I P W K iiiS electronic Cwbv*ttchnotog« Silicon NPN Power Transistor r - 3 5 - is Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique
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00DRS51
flBES100
VB-12SV
ST25C
st 25 c
transistor electronic ballast for T12
but54
BVW32
transistor a09
transistor 800V 1A
Scans-0014927
A08A
14TI
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFG 193 NPN Silicon RF Transistor • For low noise, high-gain amplifiers up to 2GHz • For linear broadband amplifiers • fy = 8GHz F = 1 .3 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code
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900MHz
BFG193
Q62702-F1291
OT-223
235b05
Q12177D
D1E1771
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PDF
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780cb
Abstract: A138-00 1351F
Text: PDA REFERENCE DESIGN Evaluation Kit Hardware Manual Contents Introduction. 334 Specification.
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RS232
Jul94
780cb
A138-00
1351F
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Untitled
Abstract: No abstract text available
Text: r r u n m TECHNOLOGY _ LT1351 250nA, 3MHz, 200V/jas O p e ra tio n a l A m p lifie r F€RTUR€S D C S C R IP TIO n • 3MHz Gain Bandwidth ■ 200V/ijs Slew Rate ■ 250|jA Supply Current ■ Available in Tiny MSOP Package The LT 1351 is a low power, high speed, high slew rate
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OCR Scan
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LT1351
250nA,
00V/jas
LT1351
20nA/2000pF
10mV/ms
8pC/2000pF
LT1352/LT1353
LT1354
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PDF
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MPSA20 transistor
Abstract: MPS-A20
Text: Silicon r - - j Ief= I r^ j Transistors M PS-A 20 The MPS-A20 is a silicon planar epitaxial passivated NPN transistor, designed for general purpose am plifier applications. i_ L T J a b s o lu te m a x im u m ratings: VCEO VCBO VEB q SEATING PLANE V olts
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MPS-A20
MPS-A20
MPSA20 transistor
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFR 180W NPN Silicon RF Transistor • For low-power amplifiers in mobile communication systems pager at collector currents from 0.2mA to 2.5mA • = 7GHz F = 2.1 dB at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!
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900MHz
OT-323
Q62702-F1490
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PDF
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Untitled
Abstract: No abstract text available
Text: @OPTEK Product Bulletin OPI150TX September 1996 Optically Coupled Isolators Types OPI150TX, OPI150TXV Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • High current transfer ratio • 50kV electrical isolation • Base contact lead for conventional
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OCR Scan
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OPI150TX
OPI150TX,
OPI150TXV
MIL-PRF-19500
50kVDC
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PDF
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OP804TXV
Abstract: OPI150 OP235TX OP235TXV OP804TX OPI150TX OPI150TXV
Text: OPTEK Product Bulletin OPI150TX September 1996 Optically Coupled Isolators Types OPI150TX, QPI150TXV Absolute Maximum Ratings Ta = 25° C u n le s s o th e rw is e note d • High current transfer ratio • 50kV electrical isolation • Base contact lead for conventional
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OCR Scan
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OPI150TX
OPI150TX,
OPI150TXV
MIL-PRF-19500
OPI150TXV
OP235TX
OP235TXV)
OP804TX
OP804TXV)
OP804TXV
OPI150
OP235TXV
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PDF
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transistor smd 12p
Abstract: transistor 12p smd smd transistor at t21 transistor smd t21 smd transistor 12p smd transistor 2x5 B7 smd transistor BLT81 transistor ft 960 smd 12p
Text: Philips Semiconductors ^ 711Dfi5b D0b^3flg P12 BlPHIN Product specification UHF power transistor BLT81 QUICK REFERENCE DATA FEATURES RF performance at Ts < 60 °C in a common emitter test circuit note 1 . • SMD encapsulation MODE OF OPERATION f (MHz) CW class-B, narrow band
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711002b
BLT81
OT223
MSC092
MRCQ89
transistor smd 12p
transistor 12p smd
smd transistor at t21
transistor smd t21
smd transistor 12p
smd transistor 2x5
B7 smd transistor
transistor ft 960
smd 12p
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PDF
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transistor BC 245
Abstract: transistor BC 245 c ST25C transistor bc 138 FC4A TRANSISTOR BC 137 but54 TELEFUNKEN 12A3 T0126
Text: TELEFUNKEN ELECTRONIC 17E D • 6 ti S 0 0 cib OOORSEi BUT 54 T m O JIP W K iiiS electronic Cwbv*ttchnotog« Silicon NPN Power Transistor r - 3 5 - is Application: Switching mode power supply, electronic ballast Features: • In multi diffusion technique • Short switching time
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00DRS51
flBES100
T0126
15A3DIN
transistor BC 245
transistor BC 245 c
ST25C
transistor bc 138
FC4A
TRANSISTOR BC 137
but54
TELEFUNKEN
12A3
T0126
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PDF
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2N6054
Abstract: 2N6056
Text: SEMTECH CÔRP SÔE D • 313^13^ 0003304 OST « S E 100 WATT 8 AM P CONTINUOUS, 16 AM P PEAK 2N 6054, 2n6056 ‘ MAXIMUM RATINGS PARAM ETER SYM BO L C o lle cto r E m itter Voltage C o lle cto r B ase Voltage E m itte r B ase Voltage V dc VcBO 80 Vdc ho
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2N6054,
2N6056
2N6056)
2N6054)
00033CH
2N6054
2N6056
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PDF
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5413C
Abstract: d54 marking 2SB736 2SB736A 2SD780 2SD780A 1h3-e
Text: NEC i j Í ? r / \ f 7 S ilico n T ra n sisto rs 2 S D 7 8 0 ,7 8 0 A N P N x Id * b 7 .9 NPN Silicon Epitaxial Transistor Audio Frequency Amplifier í# f i / FEATURES P ACK AG E DIMENSIONS O jg / h ^ ^ - C * W U n it - mm) 7"'J -y KICffl t L T t l t t .
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2SD780,
2SD780A
2SB736,
2SB736A
2SD780
2SD780A
5413C
d54 marking
2SB736
1h3-e
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PDF
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Untitled
Abstract: No abstract text available
Text: /XA78S40QB Universal Switching Regulator Subsystem FA IR C HILD A Schlumberger Company MIL-STD-883 July 1986 — Rev 15 Aerospace and Defense Data Sheet Linear Products Description Connection Diagram 16-Lead DIP Top View The >jA78S40QB is a monolithic regulator subsystem con
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/XA78S40QB
MIL-STD-883
16-Lead
A78S40QB
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PDF
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a78s40
Abstract: 40 v 20 amp, diode "Power Diode" CR04
Text: juA78S40QB FAIRCHILD A Schlum berger Com pany Universal Switching Regulator Subsystem MIL-STD-883 July 1986 — Rev 15 Aerospace and Defense Data Sheet Linear Products Description Connection Diagram 16-Lead DIP Top View The iiA78S 40Q B is a m onolithic regulator subsystem con
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MIL-STD-883
juA78S40QB
/LtA78S40QB
a78s40
40 v 20 amp, diode
"Power Diode"
CR04
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PDF
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W1P 59 transistor
Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors
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197/197X
S310N
W1P 59 transistor
W1p 48 TRANSISTOR
transistor w1P 83
ICM AP 1703
transistor SMD marked RNW
transistor BD139 PH 71
W1P 66 transistor
transistor w1P 91
Pnp transistor smd ba rn
w1p npn
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PDF
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Text: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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