IXXH50N60B3D1
Abstract: No abstract text available
Text: IXXH50N60B3D1 XPTTM 600V IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat tfi(typ) = Extreme Light Punch Through IGBT for 5-30kHz Switching 600V 50A 1.80V 135ns TO-247 Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M
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IXXH50N60B3D1
IC110
5-30kHz
135ns
O-247
IF110
IXXH50N60B3D1
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D06F150S
Abstract: SDS06F150S
Text: SDS06F150S POWER RECTIFIER TO-220F FEATURES * High Voltage and High Reliability * High Speed Switching Trr=135ns * Low VF in Turn on (VF=1.3V at IF=6A) * Suitable for Damper Diode in Horizontal Deflection Circuits 1 2 MECHANICAL CHARACTERISTICS * Case: Epoxi, Molded
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SDS06F150S
O-220F
135ns)
50units
D06F150S
D06F150S
SDS06F150S
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IXXH50N60B3D1
Abstract: No abstract text available
Text: Advance Technical Information XPTTM IGBT 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) IXXH50N60B3D1 Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 50A 1.80V 135ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IC110
IXXH50N60B3D1
135ns
O-247
IF110
50N60B3D1
IXXH50N60B3D1
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Untitled
Abstract: No abstract text available
Text: Advance Information KM23V128000TY CMOS MASK ROM 128M-Bit 16Mx8 /8Mx16 CMOS MASK ROM FEATURES GENERAL DESCRIPTION • Switchable organization 16,777,216 x 8(byte mode) 8,388,608 x 16(word mode) • Fast access time 3.3V Operation : 120ns(Max.) 3.0V Operation : 135ns(Max.)
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KM23V128000TY
128M-Bit
16Mx8
/8Mx16)
120ns
135ns
40/35mA
48-TSOP1-1218
KM23V128000TY
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dtv56f
Abstract: DTV56 DTV56B ITO-220 VFP10
Text: DTV56, DTV56F, DTV56B Vishay Semiconductors New Product formerly General Semiconductor High Voltage Damper Diodes Reverse Voltage 1500V Forward Current 10A Reverse Recovery Time 135ns ITO-220AC DTV56F 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72)
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DTV56,
DTV56F,
DTV56B
135ns
ITO-220AC
DTV56F)
O-220AC
DTV56)
30-Oct-02
dtv56f
DTV56
DTV56B
ITO-220
VFP10
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single phase full controlled rectifier component list
Abstract: D10F150S D10F1 SDS10F150S
Text: SDS10F150S POWER RECTIFIER FEATURES TO-220F * High Voltage and High Reliability * High Speed Switching Trr=135ns * Low VF in Turn on (VF=1.3V at IF=10A) * Suitable for Damper Diode in Horizontal Deflection Circuits 1 2 MECHANICAL CHARACTERISTICS * Case: Epoxi, Molded
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SDS10F150S
O-220F
135ns)
50units
D10F150S
single phase full controlled rectifier component list
D10F150S
D10F1
SDS10F150S
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IXXH50N60B3D1
Abstract: 50N60B3D1 18A100
Text: Advance Technical Information IXXH50N60B3D1 XPTTM IGBT 600V GenX3TM w/ Diode VCES IC110 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 5-30 kHz Switching = = ≤ = 600V 50A 1.80V 135ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C
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IXXH50N60B3D1
IC110
135ns
O-247
IF110
062in.
50N60B3D1
IXXH50N60B3D1
18A100
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135NSF
Abstract: No abstract text available
Text: 135NSF R Naina Semiconductor Ltd. Fast Recovery Diodes, 135A Features • • • • • Diffused Series Industrial grade Excellent surge capabilities Available in Normal and Reverse polarity Optional Avalanche Characteristic Electrical Specifications (TA = 250C, unless otherwise noted)
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135NSF
DO-205AA
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Untitled
Abstract: No abstract text available
Text: Product Folder Sample & Buy Support & Community Tools & Software Technical Documents TPS54340 SLVSBK0B – OCTOBER 2012 – REVISED MARCH 2014 TPS54340 42 V Input, 3.5 A, Step Down DC-DC Converter with Eco-mode 1 Features 3 Description • • The TPS54340 is a 42 V, 3.5 A, step down regulator
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TPS54340
TPS54340
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Untitled
Abstract: No abstract text available
Text: LAN9217 16-bit High-Performance Single-Chip 10/100 Ethernet Controller with HP Auto-MDIX Support PRODUCT FEATURES Datasheet Highlights Target Applications Video distribution systems, multi-room PVR Cable, satellite, and IP set-top boxes
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LAN9217
16-bit
LAN9218
10BASE-T
100BASE-TX
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Untitled
Abstract: No abstract text available
Text: LAN9218i High-Performance Single-Chip 10/100 Ethernet Controller with HP Auto-MDIX and Industrial Temperature Support PRODUCT FEATURES Datasheet Highlights Target Applications Video distribution systems, multi-room PVR
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LAN9218i
32-bit
16-bit
LAN9218
10BASE-T
100BASE-TX
886-LAN9218I-MT
LAN9218I-MT
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max 8770
Abstract: 256R 5962-9096601MRA ADC0802 ADC0802L INS8080A LC0001D NSC800
Text: MILITARY DATA SHEET Original Creation Date: 08/24/95 Last Update Date: 09/18/95 Last Major Revision Date: 08/24/95 MNADC0802L-X REV 0A0 8-BIT uP COMPATIBLE A/D CONVERTER General Description The ADC0802, is a CMOS 8-bit successive approximation A/D converter that uses a
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MNADC0802L-X
ADC0802,
NSC800
INS8080A
275nS.
5743HR
J20ARM
max 8770
256R
5962-9096601MRA
ADC0802
ADC0802L
LC0001D
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Untitled
Abstract: No abstract text available
Text: CM300DY-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 Dual IGBTMOD H-Series Module 300 Amperes/1200 Volts A B P - DIA. (4 TYP.) C2E1 C1 R L F C1 E1 C E2 E2 C2 M G G K E N K K R H S - M6 THD. (3 TYP) N D .110 TAB
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CM300DY-24H
Amperes/1200
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D10F150S
Abstract: No abstract text available
Text: POWER RECTIFIER SDS10F150S FEATURES * * * * High Voltage and High Reliability High Speed Switching Trr=135ns Low V F in Turn on (VF=1.3V at lF=10A) Suitable for Damper Diode in Horizontal Deflection Circuits MECHANICAL CHARACTERISTICS * * * * Case: Epoxi, Molded
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SDS10F150S
135ns)
50units
D10F150S
D10F150S
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D10F1
Abstract: D10F150S
Text: POWER RECTIFIER SDS10F150S FEATURES * * * * High Voltage and High Reliability High Speed Switching Trr=135ns Low V F in Turn on (VF=1,3V at IF= 10A) Suitable for Damper Diode in Horizontal Deflection Circuits MECHANICAL CHARACTERISTICS * * * * Case: Epoxi, Molded
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SDS10F150S
135ns)
50units
D10F150S
D10F1
D10F150S
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D06F150S
Abstract: d06f
Text: POWER RECTIFIER SDS06F150S FEATURES * * * * High Voltage and High Reliability High Speed Switching Trr=135ns Low V F in Turn on (VF=1,3V at lF=6A) Suitable for Damper Diode in Horizontal Deflection Circuits MECHANICAL CHARACTERISTICS * * * * Case: Epoxi, Molded
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SDS06F150S
135ns)
50units
D06F150S
D06F150S
d06f
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TDC1009
Abstract: tmc2009j3v 2009J3C TMC2009 TMC2009C1V TMC2009J3C 2009j3
Text: TMC2009 C M O S Multiplier-Accumulator 12x12 Bit, 135ns The T M C 2 0 0 9 is a high-speed 1 2 x 1 2 bit parallel m ultiplier-accum ulator w h ic h operates at a 135ns cycle tim e 7.4M H z multiply-accum ulate rate . The input data Features • Low Pow er Consumption C M O S Process
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TMC2009
12x12
135ns
TMC2009
135ns
24-bit
27-bit
12-bit
TDC1009
tmc2009j3v
2009J3C
TMC2009C1V
TMC2009J3C
2009j3
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D06F150S
Abstract: marking 3FW
Text: POWER RECTIFIER SDS06F150S FEATURES * * * * High Voltage and High Reliability High Speed Switching Trr=135ns Low V F in Turn on (VF=1,3V at lF=6A) Suitable for Damper Diode in Horizontal Deflection Circuits MECHANICAL CHARACTERISTICS * * * * Case: Epoxi, Molded
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SDS06F150S
135ns)
50units
D06F150S
D06F150S
marking 3FW
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Untitled
Abstract: No abstract text available
Text: TMC2009 T R Y C M O S Multiplier-Accumulator F e a tu r e s 1 2 x 1 2 • Low Power Consum ption CMOS Process B it, 1 3 5 n s The T M C 2 0 0 9 is a high-speed 1 2 x 1 2 bit parallel m ultiplier-accum ulator w h ich operates at a 135ns cycle tim e 7.4M Hz m ultiply-accum ulate rate . The input data
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TMC2009
TDC1009
135ns
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D10F150S
Abstract: marking FGW high power rectifier diode single marking 1AJ ncdt SDS10F150S
Text: POWER RECTIFIER SDS10F150S FEATURES * * * * High Voltage and High Reliability High Speed Switching Trr=135ns Low V F in Turn on (VF=1,3V at lF=10A) Suitable for Damper Diode in Horizontal Deflection Circuits M ECHANICAL CHARACTERISTICS * * * * Case: Epoxi, Molded
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SDS10F150S
135ns)
50units
D10F150S
O-22QF
D10F150S
marking FGW
high power rectifier diode single
marking 1AJ
ncdt
SDS10F150S
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TC51832FL10
Abstract: TC51832 TC51832FL-10 TC51832PL-10 256IC 832P
Text: 832P/S 832 P/S 832P/S 32,768 WORD x 3 BIT CMOS PSEUDO STATIC RAM IDESCRIPTION] The TC51832 Family is a 256IC bit high-speed CMOS Pseudo-Static RAM organized as 32,768 words by 8 bits. The TC51832 Family utilizes one transistor dynamic memory cell array with
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832P/S
832P/S
TC51832
256IC
TC51832P
plastic/SP/F/PL/SPL/FL-12
DIP28-P-300)
TC51832FL10
TC51832FL-10
TC51832PL-10
832P
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TC511632
Abstract: TC511632FL
Text: TOSHIBA TC511632FL/FTL-70/85/10 PRELIMINARY SILICON GATE CMOS 32,768 WORD x 16 BIT CMOS PSEUDO STATIC RAM Description The T C 5 1 1632FL7FTL is a 5 1 2K b t high speed C M O S p s e u d o static RAM organized as 3 2 ,7 6 8 w o rd s by 16 bits. The T C 511632FL7F TL utilizes a o n e tra n s is to r dyn a m ic m e m o ry cell w ith C M O S peripheral circuitry to p rovide high capacity, high
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TC511632FL/FTL-70/85/10
1632FL7FTL
511632FL7F
1632FLVFTL
TC511632
TC511632FL
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ideall crystal oscillator in microcontroller
Abstract: No abstract text available
Text: DE | 25Mb324 DDDDSbl 1 • ~D0561 CRYSTAL SEM IC ON DU CT OR DI , i r — bm*b& I'rir tm m m a m sra m D CSZ5116 tm m àm& m mm m r , Semiconductor Corporation 16-Bit 50kHz Sampling A/D Converter Features General Description • . • Monolithic CMOS A/D Converter
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SS4b32M
CSZ5116
16-Bit,
50kHz
50kHz
-104dB
120mW
CSZ5112/CSZ5114
CSZ5116
ideall crystal oscillator in microcontroller
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Untitled
Abstract: No abstract text available
Text: I CRYSTAL SEMIC ON DU CT OR DI DEBESMbBEM □000SG3 ^ C SZ 5112 Semiconductor Corporation T - ^ / ~ /O " / 2 - 12-Bit, 100kHz Sam pling A /D C o n v e rte r Features General Description The CSZ5112 CMOS analog-to-dlgltal converter is an ideal front end for single- or multi-channel digital signal
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DE12S4L3-S4
CSZ5112
12-Bit,
100kHz
100kHz
-87dB
120mW
CSZ5114/CSZ5116
CSZ5112
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