Untitled
Abstract: No abstract text available
Text: APT13GP120BDQ1 G 1200V TYPICAL PERFORMANCE CURVES APT13GP120BDQ1 APT13GP120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching
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APT13GP120BDQ1
APT13GP120BDQ1
APT13GP120BDQ1G*
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IC 7414 datasheet
Abstract: IC 7414 APT13GP120BDF1 T0-247 13A 600V TO247 IGBT
Text: APT13GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
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APT13GP120BDF1
O-247
Collec059)
IC 7414 datasheet
IC 7414
APT13GP120BDF1
T0-247
13A 600V TO247 IGBT
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PDF
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Untitled
Abstract: No abstract text available
Text: APT44GA60B APT44GA60S 600V High Speed PT IGBT TO APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT44GA60B
APT44GA60S
APT44GA60S
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PDF
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T0-247
Abstract: APT13GP120B igbt driver 600V 13A 600V TO247
Text: APT13GP120B APT13GP120B TYPICAL PERFORMANCE CURVES 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
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APT13GP120B
O-247
T0-247
APT13GP120B
igbt driver 600V
13A 600V TO247
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PDF
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transistor 12n60c
Abstract: 12N60c equivalent 30N120D1 13N50 equivalent 12n60c MOSFET 1200v 30a MOSFET 1000v 30a 30n120d CS20-22MOF1 12N60c MOSFET
Text: ISOPLUS Summary Title Page Isolated Discrete Packages A4 - 1 ISOPLUS247TM A4 - 2 ISOPLUS i4-PACTM A4 - 3 ISOPLUS247 – ISOPLUS i4-PACTM Isolated Discrete Packages ISOPLUS247™ is the DCB isolated version of the PLUS247™-package TO247 without a mounting hole . The design
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ISOPLUS247TM
ISOPLUS247TM
PLUS247TM-package
FBO16-08N
FBE22-06N1
21-05QC
22-08N
75-01F
21-08i01
transistor 12n60c
12N60c equivalent
30N120D1
13N50 equivalent
12n60c
MOSFET 1200v 30a
MOSFET 1000v 30a
30n120d
CS20-22MOF1
12N60c MOSFET
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APT44GA60B
Abstract: APT44GA60S MIC4452
Text: APT44GA60B APT44GA60S 600V High Speed PT IGBT TO APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT44GA60B
APT44GA60S
APT44GA60B
APT44GA60S
MIC4452
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PDF
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APT44GA60B
Abstract: APT44GA60S MIC4452
Text: APT44GA60B APT44GA60S 600V High Speed PT IGBT TO APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT44GA60B
APT44GA60S
APT44GA60B
APT44GA60S
MIC4452
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PDF
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65a3
Abstract: APT13GP120B T0-247
Text: APT13GP120B 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
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APT13GP120B
O-247
Collector-Em059)
65a3
APT13GP120B
T0-247
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PDF
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Untitled
Abstract: No abstract text available
Text: APT44GA60B APT44GA60S 600V High Speed PT IGBT TO APT44GA60S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -24 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT44GA60B
APT44GA60S
switchin51
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PDF
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transistor 7412
Abstract: 7412 datasheet IC 7412 datasheet APT13GP120B APT13GP120BG APT13GP120S APT13GP120SG
Text: 1200V APT13GP120B_S G APT13GP120B APT13GP120S APT13GP120BG* APT13GP120SG* TYPICAL PERFORMANCE CURVES *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® B TO The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch
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APT13GP120B
APT13GP120S
APT13GP120BG*
APT13GP120SG*
transistor 7412
7412 datasheet
IC 7412 datasheet
APT13GP120B
APT13GP120BG
APT13GP120S
APT13GP120SG
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PDF
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APT13GP120BSC
Abstract: T0-247
Text: APT13GP120BSC 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
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APT13GP120BSC
O-247
Col610)
APT13GP120BSC
T0-247
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PDF
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Untitled
Abstract: No abstract text available
Text: APT13GP120BDF1 APT13GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode
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APT13GP120BDF1
O-247
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PDF
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Untitled
Abstract: No abstract text available
Text: APT13GP120BDQ1 G 1200V TYPICAL PERFORMANCE CURVES APT13GP120BDQ1 APT13GP120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching
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APT13GP120BDQ1
APT13GP120BDQ1
APT13GP120BDQ1G*
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PDF
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IC 7446 A
Abstract: ic 7446 data sheet ic 7446 7446 data sheet IC 7446 datasheet 7446 APT13GP120BDQ1 APT13GP120BDQ1G 1200v 30A to247
Text: APT13GP120BDQ1 G 1200V TYPICAL PERFORMANCE CURVES APT13GP120BDQ1 APT13GP120BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT ® TO -2 47 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching
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APT13GP120BDQ1
APT13GP120BDQ1
APT13GP120BDQ1G*
IC 7446 A
ic 7446
data sheet ic 7446
7446 data sheet
IC 7446 datasheet
7446
APT13GP120BDQ1G
1200v 30A to247
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T5 transistor TO-247
Abstract: IRG4PSC71K
Text: PD - 91683A IRG4PSC71K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High abort circuit rating IGBTs, optimized for
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1683A
IRG4PSC71K
O-247
O-264,
O-247,
O-264
T5 transistor TO-247
IRG4PSC71K
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Untitled
Abstract: No abstract text available
Text: PD - 91683B IRG4PSC71K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High abort circuit rating IGBTs, optimized for motorcontrol
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91683B
IRG4PSC71K
O-247
O-264,
O-247,
O-264
Super-247Â
O-274AA
O-274AA)
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PDF
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transistor 58w
Abstract: IRG4PSC71K
Text: PD - 91683 IRG4PSC71K PRELIMINARY Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High abort circuit rating IGBTs, optimized for
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IRG4PSC71K
O-247
O-264,
O-247,
O-264
Super-247
transistor 58w
IRG4PSC71K
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PDF
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IRG4PSC71U
Abstract: T5 transistor TO-247
Text: PD - 91681A IRG4PSC71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter
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1681A
IRG4PSC71U
40kHz
200kHz
Super-247
O-247
IRG4PSC71U
T5 transistor TO-247
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IRFPS37N50A
Abstract: IRG4PSC71K
Text: PD - 91683B IRG4PSC71K Short Circuit Rated UltraFast IGBT INSULATED GATE BIPOLAR TRANSISTOR C Features • Hole-less clip/pressure mount package compatible with TO-247 and TO-264, with reinforced pins • High abort circuit rating IGBTs, optimized for motorcontrol
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91683B
IRG4PSC71K
O-247
O-264,
O-247,
O-264
Super-247
O-274AA
O-274AA)
IRFPS37N50A
IRG4PSC71K
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PDF
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IRG4PSC71U
Abstract: No abstract text available
Text: PD - 91681 IRG4PSC71U UltraFast Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter
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IRG4PSC71U
40kHz
200kHz
Super-247
O-247
Super-247
IRG4PSC71U
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PDF
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APT44GA60B
Abstract: APT44GA60BD30 APT44GA60SD30 MIC4452 SD30
Text: APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT T APT44GA60SD30 O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT44GA60BD30
APT44GA60SD30
APT44GA60B
APT44GA60BD30
APT44GA60SD30
MIC4452
SD30
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PDF
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Untitled
Abstract: No abstract text available
Text: APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT FEATURES APT44GA60SD30C TO -24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise
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APT44GA60BD30C
APT44GA60SD30C
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474J
Abstract: No abstract text available
Text: APT44GA60BD30 APT44GA60SD30 600V High Speed PT IGBT T APT44GA60SD30 O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff D 3 PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT44GA60BD30
APT44GA60SD30
474J
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PDF
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APT44GA60BD30C
Abstract: Fast Recovery Bridge Rectifier, 60A, 600V APT44GA60SD30C APT44GA60B MIC4452 rectifier bridge 300v 30a
Text: APT44GA60BD30C APT44GA60SD30C 600V High Speed PT IGBT POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is TO APT44GA60SD30C -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise
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APT44GA60BD30C
APT44GA60SD30C
APT44GA60BD30C
Fast Recovery Bridge Rectifier, 60A, 600V
APT44GA60SD30C
APT44GA60B
MIC4452
rectifier bridge 300v 30a
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