Untitled
Abstract: No abstract text available
Text: 1SS193 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS193 Unit: mm Ultra High Speed Switching Application Small package : SC-59 Low forward voltage : VF 3 = 0.9V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance
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1SS193
SC-59
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1SS394
Abstract: No abstract text available
Text: 1SS394 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS394 High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM
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1SS394
O-236MOD
SC-59
1SS394
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1SS196
Abstract: No abstract text available
Text: 1SS196 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS196 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF 3 = 0.9V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ.)
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1SS196
SC-59
1SS196
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schematic diagram atx Power supply 500w
Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455
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P462-ND
P463-ND
LNG295LFCP2U
LNG395MFTP5U
US2011)
schematic diagram atx Power supply 500w
pioneer PAL 012A
1000w inverter PURE SINE WAVE schematic diagram
600va numeric ups circuit diagrams
winbond bios 25064
TLE 9180 infineon
smsc MEC 1300 nu
TBE schematic diagram inverter 2000w
DK55
circuit diagram of luminous 600va UPS
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1SS348
Abstract: No abstract text available
Text: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 3 = 0.56V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic
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1SS348
SC-59
TD-236MOD
1SS348
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Untitled
Abstract: No abstract text available
Text: 1SS394 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS394 High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF 2 = 0.23V (typ.) @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM
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1SS394
O-236MOD
SC-59
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PDF
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Untitled
Abstract: No abstract text available
Text: 1SS193 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS193 Unit: mm Ultra High Speed Switching Application l Small package : SC-59 l Low forward voltage : VF 3 = 0.9V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 0.9pF (typ.)
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1SS193
SC-59
O-236MOD
100mA
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PDF
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Untitled
Abstract: No abstract text available
Text: 1SS348 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS348 Low Voltage High Speed Switching Unit: mm l Low forward voltage : VF 3 = 0.56V (typ.) l Low reverse current : IR = 5µA (max) l Small package : SC-59 Maximum Ratings (Ta = 25°C) Characteristic
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1SS348
SC-59
TD-236MOD
100mA
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1SS344
Abstract: No abstract text available
Text: 1SS344 TOSHIBA Diode Silicon Epitaxial Schottky Planar Type 1SS344 Ultra High Speed Switching Application Unit in mm Low forward voltage : VF 3 = 0.50V (typ.) Fast reverse recovery time : trr = 20ns (typ.) High average forward current : IO = 0.5A (max) Maximum Ratings (Ta = 25°C)
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1SS344
961001EAA2'
1SS344
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1SS193
Abstract: No abstract text available
Text: 1SS193 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS193 Unit: mm Ultra High Speed Switching Application z Small package : SC-59 z Low forward voltage : VF 3 = 0.9V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 0.9pF (typ.)
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1SS193
SC-59
1SS193
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Untitled
Abstract: No abstract text available
Text: 1SS294 TO SHIBA TO SHIBA DIODE 1 SS294 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. + 0.5 2 . 5 - 0 .3 Low Forward Voltage : Vp 3 = 0.54V (Typ.) Low Reverse Current : Ir = 5 fu A (Max.) Small Package : SC-59 •
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1SS294
SS294
SC-59
O-236MOD
SC-59
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 1SS344 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS344 ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm + 0.5 2.5-0.3 • Low Forward Voltage : V p 3 = 0.50V (Typ.) • Fast Reverse Recovery Time : trr = 20ns (Typ.) • High Average Forward Current : I o = 0.5A (Max.)
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1SS344
961001EAA2'
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SS250 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE 1SS250 Unit in mm HIGH SPEED SW ITCHING APPLICATIONS. • Low Forward Voltage • Fast Reverse Recovery Time • Sm all Total Capacitance : C¡T = 1.5pF Typ. • Sm all Package : SC-59 + 0.5 2 . 5 - 0 .3
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1SS250
SC-59
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SS311 1 SS31 1 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm HIGH VO LTAG E, HIGH SPEED SW ITCHING APPLICATIONS. Low Forward Voltage High Voltage Fast Reverse Recovery Time Small Total Capacitance Small Package : Vp = 0.94V : VR = 400V : trr = 1.5/ j s
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1SS311
SC-59
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1SS344
Abstract: No abstract text available
Text: TOSHIBA 1SS344 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 SS344 ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm + 0.5 2.5 -0.3 • Low Forward Voltage : Vp 3 = 0.50V (Typ.) • Fast Reverse Recovery Time : trr = 20ns (Typ.) • High Average Forward Current : I q = 0.5A (Max.)
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1SS344
961001EAA2'
1SS344
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1SS348
Abstract: No abstract text available
Text: TOSHIBA 1SS348 TOSHIBA DIODE 1 SS348 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SWITCHING • • • + 0.5 2.5 -0.3 Low Forward Voltage : Vp 3 = 0.56V (Typ.) Low Reverse Current : Ir = 5/j A (Max.) Small Package : SC-59 + 0.25
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1SS348
100mA
961001EAA2
1SS348
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 1SS344 TOSHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1 Ç Ç 3 A 4 WÊÊF WÊÊF W ÊT • ■ ■ Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. • • • + 0.5 2 . 5 - 0 .3 Low Forward Voltage : Vp 3 = 0.50V (Typ.) Fast Reverse Recovery Time : trr = 20ns (Typ.)
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1SS344
1500S344
61001EA
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Untitled
Abstract: No abstract text available
Text: 1SS349 TOSHIBA TOSHIBA DIODE i SS349 SILICON EPITAXIAL SCH OTT KY BARRIER TYPE LOW VOLTAGE HIGH SPEED SWITCHING. • • • +0.5 2 5 -0.3 + 0.25 1.5 - 0-15 Low Forward Voltage : Vp 3 = 0.49V (Typ.) Low Reverse Current : I r = 50//A (Max.) Small Package
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1SS349
SS349
50//A
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et1203
Abstract: No abstract text available
Text: SILICON EPITAXIAL PIN TY P E 1SV128 Unit in mm V H F — UHF BAND RF A TTE N U A TO R APPLICATIONS. • • Small Package Small Total Capcitance : Cx = 0.25pF Typ.j M A X IM U M RATINGS (Ta = 25°C CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature
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1SV128
SC-59
100MHz
et1203
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Untitled
Abstract: No abstract text available
Text: 1SS307 T O SH IB A 1SS307 TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm GENERAL PUROPOSE RECTIFIER APPLICATIONS. • • • • Low Forward Voltage Low Reverse Current Small Total Capacitance Small Package + 0 .5 2 .5 - 0 . 3 VF = 1.0V Typ. lR = 0.1nA(Typ.)
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1SS307
SC-59
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 1SS348 TO SHIBA DIODE SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS348 Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING • • • + 0 .5 2 .5 - 0 .3 Low Forward Voltage : Vp 3 = 0.56V (Typ.) Low Reverse Current : Ir = 5,«A (Max.) Small Package
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1SS348
SC-59
O-236MOD
SC-59
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PDF
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Untitled
Abstract: No abstract text available
Text: 1SS349 TO SHIBA TO SHIBA DIODE 1 SS349 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm LO W VOLTAGE HIGH SPEED SW ITCHING. • • • Low Forward Voltage : Vp 3 = 0.49V (Typ.) Low Reverse Current : Ir = 50/j A (Max.) Small Package : SC-59 M A X IM U M RATINGS (Ta = 25°C)
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1SS349
SS349
SC-59
O-236MOD
SC-59
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Untitled
Abstract: No abstract text available
Text: 1SS394 TO SHIBA TO SHIBA DIODE HIGH SPEED SW ITCHING APPLICATION 1 SS394 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm + 0.5 2.5 - 0 . 3 • • h 0.25 1.5 -0 .1 5 Small Package Low Forward Voltage : Vp 2 —0.23V (Typ.) @Ip = 5:mA - e - 2 M A X IM U M RATINGS (Ta = 25°C)
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1SS394
SS394
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Untitled
Abstract: No abstract text available
Text: TO SHIBA 1SS193 1 S S 1 93 TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SW ITCHING APPLICATIO N. 2 .5 • • • • Small Package Low Forward Voltage Fast Reverse Recovery Time Small Total Capacitance + - 0.5 0.3 : SC-59 : Vp 3 = 0.9V (Typ.)
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1SS193
SC-59
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