13MJ Search Results

13MJ Result Highlights (2)

Part	ECAD Model	Manufacturer	Description	Download	Buy
LT1013MJGB		Texas Instruments	Dual Precision Operational Amplifier 8-CDIP -55 to 125
LT1013MJG		Texas Instruments	Dual Precision Operational Amplifier 8-CDIP -55 to 125

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Maxim Integrated Products MAX913MJA IC COMPARATOR 1 W/LATCH 8CERDIP
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DigiKey	MAX913MJA	Bag			10,000	1 - 10 - 100 - 1000 - 10000 $8.85	Buy Now
Texas Instruments LT1013MJG DUAL PRECISION OPERATIONAL AMPLI
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DigiKey	LT1013MJG	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
ComSIT USA	LT1013MJG		7			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Analog Devices Inc LT1213MJ8 IC OPAMP GP 2 CIRCUIT 8CERDIP
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DigiKey	LT1213MJ8	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC MXL1013MJ8 IC OPAMP GP 2 CIRCUIT 8CERDIP
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DigiKey	MXL1013MJ8	Bulk			31	1 - 10 - 100 $9.95 1000 $9.95 10000 $9.95	Buy Now
Texas Instruments LT1013MJGB DUAL PRECISION OPERATIONAL AMPLI
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DigiKey	LT1013MJGB	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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13MJ Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
NTE2374 Abstract: No abstract text available Text: NTE2374 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18A	Original	NTE2374 NTE2374	PDF
NTE2385 Abstract: No abstract text available Text: NTE2385 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0A	Original	NTE2385 NTE2385	PDF
NTE2379 Abstract: No abstract text available Text: NTE2379 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V	Original	NTE2379 NTE2379	PDF
NTE2904 Abstract: C62C Text: NTE2904 MOSFET N-Ch, Enhancement Mode High Speed Switch Features: D Advanced Process Technology D Ultra Low On-Resistance D Dynamic dv/dt Rating D +175°C Operating Temperature D Fast Switching D Fully Avalanche Rated Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID	Original	NTE2904 Dissipation32A, 00A/s, NTE2904 C62C	PDF
triac gate drive circuit Abstract: IGBT light DIMMER igbt dimmer IGBT/MOSFET Gate Drive driving mosfet/igbt with pulse transformer driver "reverse phase control" igbt dimmer TRIAC dimmer control an5183 reverse phase control igbt dimmer ZENER DIODE t2 Text: APPLICATION NOTE DRIVE CIRCUITS FOR POWER MOSFETs AND IGBTs by B. Maurice, L. Wuidart 1. INTRODUCTION Unlike the bipolar transistor, which is current driven, Power MOSFETs, with their insulated gates, are voltage driven. A basic knowledge of the principles	Original		PDF
N-Channel Enhancemen-Mode MOSFET Abstract: NTE2386 Text: NTE2386 MOSFET N–Channel Enhancemen Mode, High Speed Switch Description: The NTE2386 Power MOSFET features advantages such as voltage control, very fast switching, ease of paralleling and temperature stability, and is suited for applications such as switching power	Original	NTE2386 NTE2386 N-Channel Enhancemen-Mode MOSFET	PDF
NTE2397 Abstract: Transistor Mosfet N-CH 200V 40A Text: NTE2397 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A	Original	NTE2397 NTE2397 Transistor Mosfet N-CH 200V 40A	PDF
NTE2399 Abstract: No abstract text available Text: NTE2399 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.1A	Original	NTE2399 NTE2399	PDF
NTE2900 Abstract: NTE290 Text: NTE2900 MOSFET N–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14A	Original	NTE2900 NTE2900 NTE290	PDF
igbt dimmer Abstract: IGBT light DIMMER "reverse phase control" igbt dimmer reverse phase control igbt dimmer DRIVE CIRCUITS FOR POWER MOSFETs AND IGBTs light dimmer igbt STGP10N50 AN486 topologies pulse transformer driver IGBT APPLICATION LC filter dimmer Triac Text: APPLICATION NOTE DRIVE CIRCUITS FOR POWER MOSFETs AND IGBTs by B. Maurice, L. Wuidart 1. INTRODUCTION Unlike the bipolar transistor, which is current driven, Power MOSFETs, with their insulated gates, are voltage driven. A basic knowledge of the principles	Original		PDF
Untitled Abstract: No abstract text available Text: NTE2373 MOSFET P–Ch, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Continuous Drain Current VGS = 10V , ID TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11A	Original	NTE2373	PDF
TRIAC 97A6 Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1	OCR Scan	OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C	PDF
2601 Abstract: No abstract text available Text: PART NAME PART No. NEMA 4X ENCLOSURE NOTE: INDUSTRY STANDARDS! POLYCARBONATE LIGHT GRAY AND CLEAR U L94V -2 FLAMMABILITY RATING (UL FILE UV STABILIZED SERVICE TEMPERATURE RANGE: -40C TD ABS (DARK GRAY) UL94-HB FLAMMABILITY RATING (UL FILE SERVICE TEMPERATURE RANGE: -40C TD	OCR Scan	IE41613) E56070) PNR-2600, PNR-2601, PNR-2600-C PNR-2601-C PNR-2600-DG PNR-2601-DG UL94-HB PNR-2600 2601	PDF
Untitled Abstract: No abstract text available Text: 7 8 DRAWING MADE IN THIRD ANGLE PROJECTION THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. 6 5 3 4 2 ,19 LOC DIST DF ALL INTERNATIONAL RIGHTS RESERVED. 1 DO REVISIONS ZONE LTR DESCRIPTION L REV PER 0600-6687-97 JY	OCR Scan	13-MJ6-98 anpt3037 e/aiipt3037/ediimod	PDF