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    1450MΩ Price and Stock

    Advanced Cable Ties Inc AL-14-50-MH-0-C

    CBL TIE LOCKING BLK 50LB 1.208'
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    DigiKey AL-14-50-MH-0-C Bulk 4,300 100
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    • 1000 $0.06784
    • 10000 $0.05531
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    Powell Electronics AL-14-50-MH-0-C 2,760 1,000
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    Advanced Cable Ties Inc AL-14-50-MD-22-C

    CBL TIE LOCKING TEAL 50LB 1.196'
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    DigiKey AL-14-50-MD-22-C Bulk 3,500 100
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    Powell Electronics AL-14-50-MD-22-C 660 1,000
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    Advanced Cable Ties Inc AL-14-50-MH-9-C

    CBL TIE LOCKING NAT 50LB 1.208'
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    DigiKey AL-14-50-MH-9-C Bulk 1,800 100
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    • 100 $0.081
    • 1000 $0.06603
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    Powell Electronics AL-14-50-MH-9-C 660 1,000
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    AC Connectors S1450M50-RU-050

    50ft 14-50P/SS2-50R Rubber Cord
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    DigiKey S1450M50-RU-050 Ammo Pack 25
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    AC Connectors S1450M50-RU-075

    75ft 14-50P/SS2-50R Rubber Cord
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    DigiKey S1450M50-RU-075 Ammo Pack 25
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    1450MΩ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MOSFET

    Abstract: No abstract text available
    Text: ACE1550B P-Channel Enhancement Mode Field Effect Transistor Description The ACE1550B combines advanced trench MOSFET technology with a low resistance package to provide This device is ideal for Power Supply Converter Circuits and Load/Power Switching Cell Phones,


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    PDF ACE1550B ACE1550B 1450mÎ MOSFET

    Untitled

    Abstract: No abstract text available
    Text: シングル P チャンネル MOSFET ELM5E401PA-S •概要 ■特長 ELM5E401PA-S は低入力容量 低電圧駆動、 低 ・ Vds=-20V ON 抵抗という特性を備えた大電流 MOS FET です。 ・ Id=-0.7A ・ Rds on = 620mΩ (Vgs=-4.5V) ・ Rds(on) = 860mΩ (Vgs=-2.5V)


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    PDF ELM5E401PA-S 1450mÎ AFP1013

    AFP1013

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM5E401PA-S •General description ■Features ELM5E401PA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • ■Maximum absolute ratings Parameter Drain-source voltage


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    PDF ELM5E401PA-S ELM5E401PA-S 1450mÎ AFP1013 AFP1013

    ELM5E401PA

    Abstract: No abstract text available
    Text: 单 P 沟道 MOSFET ELM5E401PA-S •概要 ■特点 ELM5E401PA-S 是 P 沟道低输入电容,低工作电 •Vds=-20V 压,低导通电阻的大电流 MOSFET。 ·Id=-0.7A ·Rds on = 620mΩ (Vgs=-4.5V) ·Rds(on) = 860mΩ (Vgs=-2.5V) ·Rds(on) = 1450mΩ (Vgs=-1.8V)


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    PDF ELM5E401PA-S 1450mÎ AFP1013 ELM5E401PA

    ASTX-11

    Abstract: ABS06
    Text: ABRAC O N P RO DUC T CATAL O G September 2013 Crystals Real-Time Clocks Oscillators Filters Precision Timing RF & Microwave Magnetics & Capacitors Engineered Solutions Oscillators ASG 7.0 x 5.0 x 2.0mm Precision Timing Solutions ABLNO 9.2 x 14.8 x 5.5 mm SMT


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    PDF ABS07 100MHz 70MHz C2013-01214 ASTX-11 ABS06

    Untitled

    Abstract: No abstract text available
    Text: Single P-channel MOSFET ELM5E401PA-S •General description ■Features ELM5E401PA-S uses advanced trench technology to provide excellent Rds on , low gate charge and low gate resistance. • • • • • Vds=-20V Id=-0.7A Rds(on) = 620mΩ (Vgs=-4.5V) Rds(on) = 860mΩ (Vgs=-2.5V)


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    PDF ELM5E401PA-S ELM5E401PA-S 1450mÎ AFP1013