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    145AA Search Results

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    145AA Price and Stock

    Bulgin H3145AAWAEX

    SWITCH DETECTOR SPST-NC 5A 250V
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    Mouser Electronics H3145AAWAEX
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    RS H3145AAWAEX Bulk 16 Weeks 500
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    TME H3145AAWAEX 500
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    Bulgin H3145AABAEX

    SWITCH DETECTOR SPST-NC 5A 250V
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    DigiKey H3145AABAEX Bulk 500
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    RS H3145AABAEX Bulk 16 Weeks 500
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    TME H3145AABAEX 500
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    Bulgin H3145AAPAEX

    SWITCH DETECTOR SPST-NC 5A 250V
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    DigiKey H3145AAPAEX Bulk 500
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    Mouser Electronics H3145AAPAEX
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    RS H3145AAPAEX Bulk 16 Weeks 500
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    TME H3145AAPAEX 500
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    Tai-Saw Technology Co Ltd TQ0145AA0000

    RF ANT 1574MHZ CERAMIC PATCH PIN
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    DigiKey TQ0145AA0000 Box 200
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    3M Interconnect 8F36-CES0145A-AB

    TWIN AXIAL CABLE ASSEMBLY FOR IN
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    DigiKey 8F36-CES0145A-AB Bulk 500
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    Avnet Americas 8F36-CES0145A-AB Bulk 28 Weeks, 6 Days 500
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    145AA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    145AA

    Abstract: marking 2x
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS ÍÍ ICEPAK 6.3x4.9 − C PAD CASE 145AA−01 ISSUE O DATE 11 NOV 2008 SCALE 2:1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. COPLANARITY APPLIES TO THE FLANGES


    Original
    145AA-01 145AA 145AA marking 2x PDF

    C4890

    Abstract: 145AA
    Text: NTMKC4890N Power MOSFET 30 V, 155 A, Single N−Channel, ICEPAK Features • • • • • • • Low Package Inductance Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses


    Original
    NTMKC4890N 145AA NTMKC4890N/D C4890 145AA PDF

    bcm2835

    Abstract: BROADCOM BCM2835
    Text: 1 1 1 1 1 1 BCM2835 ARM Peripherals 2012 Broadcom Corporation. All rights reserved Broadcom Europe Ltd. 406 Science Park Milton Road Cambridge CB4 0WW Table of Contents 11 Introduction 1.11 Overview 1.21 Address map 1.2.11 Diagrammatic overview 1.2.21 ARM virtual addresses standard Linux kernel only


    Original
    BCM2835 BROADCOM BCM2835 PDF

    C4890

    Abstract: 145AA
    Text: NTMKC4890N Power MOSFET 30 V, 155 A, Single N−Channel, ICEPAK Features • • • • • • • Low Package Inductance Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses


    Original
    NTMKC4890N NTMKC4890N/D C4890 145AA PDF

    BLW24

    Abstract: BLY38 BLY88 bly91 BLY-38 BLX66 bly power transistor TRANSISTOR BFW 16 BLY36 Transistor BFw 92
    Text: BLW24 SILICON NPN VHF POWER TRANSISTOR HIGH POWER OUTPUT STAGE FOR FM/AM APPLICATIONS • • • • 17 W@ 175 MHz 8 dB Gain Distributed Construction I nerdigital Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 60 V


    OCR Scan
    BLW24 O-1175 O-117 T0-60CE S0-104 SO-104 BLW24 BLY38 BLY88 bly91 BLY-38 BLX66 bly power transistor TRANSISTOR BFW 16 BLY36 Transistor BFw 92 PDF

    SO-104

    Abstract: BLW11 blw 30 or bfw 30 BLW21 BLY 67 BLY-38 BLY34 bly 55 bly 63 BLY87
    Text: VHF-, UHF-ANWENDUNGEN VHF-, UHF APPLICATIONS 3 - 12 Typ type f MHz BFW 16 BFW 17 BFX 89 BFY 90 CATV CATV CATV CATV BLW11 BLW 12 BLW 13 BLW 14 CATV 470 470 470 13 13 13 0,1 0,75 2 0,66 3,75 7 BLW BLW BLW BLW 16 17 18 19 175 175 175 175 13 13 13 13 0,1 0,1 0,5


    OCR Scan
    BLW11 O-131 O-129 O-117 SO-104 blw 30 or bfw 30 BLW21 BLY 67 BLY-38 BLY34 bly 55 bly 63 BLY87 PDF

    BFW 11 oa

    Abstract: bly78 BLW18 BLW11 bly92a bly93a BLY38 bly34 BLY60 BLY53
    Text: BLW18 SILIC O N NPN VH F POWER T R A N S IST O R electrical characteristics at 25 °C case temperature unless otherwise noted PAR AM ETE R V IBR)CER lc = 50 m A , R b e = 1 0 Í2 L V CEO C o lle ctor-E m itte r Breakdown Voltage I q = 50 m A , Iß = o See N ote 1


    OCR Scan
    BLW18 VCB-13V, O-117 T0-60CE S0-104 SO-104 BFW 11 oa bly78 BLW18 BLW11 bly92a bly93a BLY38 bly34 BLY60 BLY53 PDF

    BLW20

    Abstract: TRANSISTOR BFW 16 BLW24 BLW19 BLW11 BLX67 BLY93A bly91 61 TRANSISTOR BLY53A
    Text: BLW20 SIL IC O N NPN V H F POWER T R A N SIST O R 873 HUGH GAIN OUTPUT FOR 13 V FM APPLICATIONS « » » 25 W at 175 MHz Designed to withstand all VSWR at Rated Output Distributed Construction mechanical data absolute maximum ratings Tease93 25 °C Collector-Base V o lta g e . 36 V


    OCR Scan
    BLW20 32-UNC-2A-Thread O-117 T0-60CE S0-104 SO-104 BLW20 TRANSISTOR BFW 16 BLW24 BLW19 BLW11 BLX67 BLY93A bly91 61 TRANSISTOR BLY53A PDF

    BLY93A

    Abstract: BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63
    Text: BLW23 SILICON NPN VH F POWER TRANSISTOR • • • 5 W at 175 MHz, 28 V Minimum Gain 13 dB Designed to Withstand Infinite VSWR at Rated Output mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 55 V


    OCR Scan
    BLW23 8/32-UNC-2A-Thread O-117 O-117 T0-60CE S0-104 SO-104 BLY93A BLY78 BLY34 BLY97A BLY-38 BLW11 BLY91 BLW25 BLW19 bly 63 PDF

    BLY78

    Abstract: BLY87 bly91 BLY93A TRANSISTOR BFW 11 Transistor BFX 90 BLY34 BLW12 BLY91A BLY53
    Text: BLW12 SILICO N NPN VH F POWER TRANSISTOR HIGH G AIN DRIVER FOR 13 V FM APPLICATIONS • • • • 750 mW at 470 MHz Min, Gain 10 dB Studless Stripline Package Distributed Construction mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e . 36 V


    OCR Scan
    BLW12 O-117 T0-60CE S0-104 SO-104 BLY78 BLY87 bly91 BLY93A TRANSISTOR BFW 11 Transistor BFX 90 BLY34 BLW12 BLY91A BLY53 PDF

    TRANSISTOR BFW 11

    Abstract: BLW11 BLW13 BLY92 BLX67 BLY34 BLY97 transistor BFW 10 BLY53A BFy 90 transistor
    Text: BLW13 S IL IC O N NPN V H F POWER T R A N SIST O R H IG H G A IN D R IV E R FOR 13 V FM A P P L IC A TIO N S • 3.7 5 W at 470 M Hz • Minim um Gain 7 dB • • Stripline Package Distributed Construction mechanical data TO-129 absolute maximum ratings Tease * 2 5 °C


    OCR Scan
    BLW13 O-117 T0-60CE S0-104 SO-104 TRANSISTOR BFW 11 BLW11 BLW13 BLY92 BLX67 BLY34 BLY97 transistor BFW 10 BLY53A BFy 90 transistor PDF

    BLW 12v

    Abstract: TO-131 Package BLY85 BLW11 BLW17 BLY53 bly53a BLY 67 BLY60 BLX67
    Text: BLW17 SIL IC O N NPN V H F POWER T R A N SIST O R 271 HIGH G AIN MEDIUM POWER VH F AM PLIFIER • • • • 2 W@ 175 MHz 13 dB Gain Stripline Package Interdigital Geometry mechanical specification absolute maximum ratings T Ca s e ~ 25 °C Collector-Base V o lta g e .36 V


    OCR Scan
    BLW17 BLW 12v TO-131 Package BLY85 BLW11 BLY53 bly53a BLY 67 BLY60 BLX67 PDF

    blw 30 or bfw 30

    Abstract: TRANSISTOR BFW 11 BLY83 BLY78 bly91 BLY-38 BLW11 blw 93 BLY76 BLY53
    Text: BLW 22 SILICON NPN VHF POWER TRANSISTOR 873 FOR HIGH LEV EL C ATV APPLICATIONS • • • Typical f T 1000 MHz Cross M odulation Typically — 80 dB Inter Modulation Typically — 52 dB mechanical data absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .40 V


    OCR Scan
    O-117 O-117 T0-60CE S0-104 SO-104 blw 30 or bfw 30 TRANSISTOR BFW 11 BLY83 BLY78 bly91 BLY-38 BLW11 blw 93 BLY76 BLY53 PDF

    BLW16

    Abstract: BLW25 S0104 BLY78 BLY85 Transistor BFX 59 BFW 100 transistor bly93a BLY-38 BLW11
    Text: BLW16 SILICON NPN VHF POWER TRANSISTOR 271 HIGH GAIN VH F MEDIUM POWER TRANSISTOR • • • • 1.4 W at 175 MHz Greater than 10 dB Gain Distributed Construction Interdigital Geometry mechanical data absolute maximum ratings T^ase s 25 °C Collector-Base V o lt a g e .36 V


    OCR Scan
    BLW16 O-117 T0-60CE S0-104 SO-104 BLW16 BLW25 S0104 BLY78 BLY85 Transistor BFX 59 BFW 100 transistor bly93a BLY-38 BLW11 PDF

    BLY 33 transistor

    Abstract: BLW11 BFW 100 transistor BFY 52 transistor bfw 11 BFy 90 transistor Transistor BFX 59 transistor BFW 10 BLY 97 transistor texas rf power transistor
    Text: BLW11 SILICON NPN VH F/UH F POWER TRANSISTOR Ideal for C A T V Applications Typical Gain Bandwidth Product —1.35 GHz 11 dB Gain @ 20 0 M H z. In Broadband Circuit Low Distortion Low Noise mechanical data absolute maximum ratings (Tease ” 2 5 °C ) . . .


    OCR Scan
    BLW11 O-117 T0-60CE S0-104 SO-104 BLY 33 transistor BLW11 BFW 100 transistor BFY 52 transistor bfw 11 BFy 90 transistor Transistor BFX 59 transistor BFW 10 BLY 97 transistor texas rf power transistor PDF

    BLW25

    Abstract: bly91 BLY93 BLY78 BLY-38 BLY-53 BLW11 BLw vhf BLY79 BLY88
    Text: BLW25 SIL IC O N NPN VH F POWER T R A N SIST O R High Gain Output for 13 V A M Applications 40 W a t 175 M H z M inim um Gain 7 dB. mechanical specifications absolute maximum ratings Tease = 25 °C Collector-Base V o lt a g e .60 V


    OCR Scan
    BLW25 O-145 toxi175 O-117 T0-60CE S0-104 SO-104 BLW25 bly91 BLY93 BLY78 BLY-38 BLY-53 BLW11 BLw vhf BLY79 BLY88 PDF

    BLY93

    Abstract: bly89 BLY78 bly91 BLX65 bly93a BFY 94 transistor bly 78 BLW11 BLY88
    Text: BLW14 SILICON NPN VHF POWER TRANSISTOR 873 H IG H G A IN O U TP U T FOR 13 V FM A P P L IC A TIO N S • 7 W a t 470 M H z • Stripline Package • Distributed Construction mechanical data TO-129 absolute maximum ratings Tease = 25 °C Collector-Base V o lta g e .36 V


    OCR Scan
    BLW14 O-129 O-117 T0-60CE S0-104 SO-104 BLY93 bly89 BLY78 bly91 BLX65 bly93a BFY 94 transistor bly 78 BLW11 BLY88 PDF