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    C11040

    Abstract: No abstract text available
    Text: New Product SiB437EDKT Vishay Siliconix P-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () ID (A) 0.034 at VGS = - 4.5 V - 9a 0.063 at VGS = - 1.8 V -5 0.084 at VGS = - 1.5 V -3 0.180 at VGS = - 1.2 V -1 • Halogen-free According to IEC 61249-2-21


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    PDF SiB437EDKT SC-75 2002/95/EC SC-75-6L-Single 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 C11040

    CA-4050

    Abstract: ca5100
    Text: CA Vishay Dale Wirewound Resistors, Commercial Power, Axial Lead FEATURES • High performance for low cost • Auto insertable • CA0001, CA0002 and CA5000 models are supplied with a high temperature silicone coating for additional environmental protection


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    PDF CA0001, CA0002 CA5000 2002/95/EC CA0001 CA4000 CA-4050 ca5100

    Untitled

    Abstract: No abstract text available
    Text: New Product SiB404DK Vishay Siliconix N-Channel 12 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)a 0.019 at VGS = 4.5 V 9 VDS (V) 12 0.022 at VGS = 2.5 V 9 0.026 at VGS = 1.8 V 9 0.065 at VGS = 1.2 V 3 • Halogen-free According to IEC 61249-2-21


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    PDF SiB404DK SC-75 2002/95/EC SC-75-6L-Single SiB404DK-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Device Orientation Vishay Siliconix TR Device Orientation for TO-252 DEVICE ORIENTATION PACKAGE METHOD TO-252 TR Note • The TR designator is not inflected in the part number or ordering information. User Direction of Feed Revision control of this drawing is maintained through Document Control.


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    PDF O-252 O-252 X11-0006, 14-Febr-11 PACK-0007-26 14-Feb-11

    marking code vishay SILICONIX

    Abstract: SIA915DJ
    Text: New Product SiA915DJ Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.087 at VGS = - 10 V - 4.5a 0.145 at VGS = - 4.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


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    PDF SiA915DJ SC-70 2002/95/EC SC-70-6 SiA915DJ-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 marking code vishay SILICONIX

    N-Channel mosfet sot-363

    Abstract: No abstract text available
    Text: Si1539CDL Vishay Siliconix N- and P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 30 P-Channel - 30 RDS(on) () ID (A)a 0.388 at VGS = 10 V 0.7 0.525 at VGS = 4.5 V 0.6 0.890 at VGS = - 10 V - 0.5 1.7 at VGS = - 4.5 V - 0.3 Qg (Typ.)


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    PDF Si1539CDL OT-363 SC-70 Si1539CDL-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 N-Channel mosfet sot-363

    67341

    Abstract: si4403C si4403
    Text: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21


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    PDF Si4403CDY 2002/95/EC Si4403CDY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 67341 si4403C si4403

    TSOP752

    Abstract: TSOP75230 TSOP75233 TSOP75236 TSOP75238 TSOP75240 TSOP75256 TSOP754
    Text: TSOP752., TSOP754. Vishay Semiconductors IR Receiver Modules for Remote Control Systems FEATURES • Very low supply current • Photo detector and preamplifier in one package • Internal filter for PCM frequency • Supply voltage: 2.5 V to 5.5 V • Improved immunity against ambient light


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    PDF TSOP752. TSOP754. 2002/95/EC 2002/96/EC 11-Mar-11 TSOP752 TSOP75230 TSOP75233 TSOP75236 TSOP75238 TSOP75240 TSOP75256 TSOP754

    Untitled

    Abstract: No abstract text available
    Text: RMK 55N, RMK 515N Vishay Sfernice Wirebondable High Precision Single Value Chip Resistors FEATURES • Precise tolerance from ± 0.01 % to ± 1 %  Wide resistance ranges from 1 k to 2 M Actual Size The demand for high precision, high stability resistive chips


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    PDF 2002/95/0EC 18-Jul-08

    E123

    Abstract: No abstract text available
    Text: VS-60EPU06PbF, VS-60APU06PbF Vishay Semiconductors Ultrafast Soft Recovery Diode, 60 A FRED Pt FEATURES • Ultrafast recovery time • Low forward voltage drop • 175 °C operating junction temperature TO-247AC modified TO-247AC Cathode to base 2 Cathode


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    PDF VS-60EPU06PbF, VS-60APU06PbF O-247AC O-247AC 2002/95/EC VS-60EPU06PbF O-247AC, 11-Mar-11 E123

    Untitled

    Abstract: No abstract text available
    Text: TSOP753., TSOP755. Vishay Semiconductors IR Receiver Modules for Remote Control Systems FEATURES • Very low supply current • Photo detector and preamplifier in one package • Compatible also with short burst dataformats • Supply voltage: 2.5 V to 5.5 V


    Original
    PDF TSOP753. TSOP755. 2002/95/EC 2002/96/EC 18-Jul-08

    SIA915DJ

    Abstract: No abstract text available
    Text: New Product SiA915DJ Vishay Siliconix Dual P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () ID (A) 0.087 at VGS = - 10 V - 4.5a 0.145 at VGS = - 4.5 V - 4.5a • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


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    PDF SiA915DJ SC-70 2002/95/EC SC-70-6 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    sir662dp

    Abstract: No abstract text available
    Text: New Product SiR662DP Vishay Siliconix N-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) a RDS(on) () 60 ID (A) 0.0027 at VGS = 10 V 60 0.0035 at VGS = 4.5 V 60 Qg (Typ.) 30 nC PowerPAK SO-8 S 6.15 mm APPLICATIONS 5.15 mm 1 S 2 • • • •


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    PDF SiR662DP 2002/95/EC SiR662DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SQ1912EEH Vishay Siliconix Automotive Dual N-Channel 20 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedd • Typical ESD Protection: 800 V • Compliant to RoHS Directive 2002/95/EC


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    PDF SQ1912EEH OT-363 SC-70 AEC-Q101 2002/95/EC SC-70 SQ1912EEH-T1-GE3 25any 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si7392ADP Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 RDS(on) () ID (A) 0.0075 at VGS = 10 V 30 0.0115 at VGS = 4.5 V 30 Qg (Typ.) 12 PowerPAK SO-8 S 6.15 mm 5.15 mm 1 D S 2 APPLICATIONS S 3 • High-Side DC/DC Conversion


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    PDF Si7392ADP 2002/95/EC Si7392ADP-T1-E3 Si7392ADP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7138DP Vishay Siliconix N-Channel 60 V D-S Reduced Qgd, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A)a 0.0078 at VGS = 10 V 30 0.009 at VGS = 6 V 30 Qg (Typ.) 55 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


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    PDF Si7138DP 2002/95/EC Si7138DP-T1-E3 Si7138DP-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si7138DP Vishay Siliconix N-Channel 60 V D-S Reduced Qgd, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A)a 0.0078 at VGS = 10 V 30 0.009 at VGS = 6 V 30 Qg (Typ.) 55 PowerPAK SO-8 • Halogen-free According to IEC 61249-2-21


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    PDF Si7138DP 2002/95/EC Si7138DP-T1-E3 Si7138DP-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SQ7002K Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 1.30 RDS(on) () at VGS = 4.5 V 1.90 ID (A) 0.32 Configuration Single D TO-236 SOT-23 G • Halogen-free According to IEC 61249-2-21


    Original
    PDF SQ7002K O-236 OT-23 AEC-Q101 2002/95/EC OT-23 SQ7002K-T1-GE3 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: CA Vishay Dale Wirewound Resistors, Commercial Power, Axial Lead FEATURES • High performance for low cost • Auto insertable • CA0001, CA0002 and CA5000 models are supplied with a high temperature silicone coating for additional environmental protection


    Original
    PDF CA0001, CA0002 CA5000 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si7430DP Vishay Siliconix N-Channel 150 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 150 0.045 at VGS = 10 V 26 0.047 at VGS = 8 V 25 • Halogen-free According to IEC 61249-2-21 Definition • Extremely Low Qgd for Reduced dV/dt, Qgd and


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    PDF Si7430DP 2002/95/EC Si7430DP-T1-E3 Si7430DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    TSOP75538

    Abstract: TSOP75338 sony lcd tv circuit diagram free TSOP753 TSOP75330 TSOP75333 TSOP75336 TSOP75340 TSOP75356 TSOP755
    Text: TSOP753., TSOP755. Vishay Semiconductors IR Receiver Modules for Remote Control Systems FEATURES • Very low supply current • Photo detector and preamplifier in one package • Compatible also with short burst dataformats • Supply voltage: 2.5 V to 5.5 V


    Original
    PDF TSOP753. TSOP755. 2002/95/EC 2002/96/EC 11-Mar-11 TSOP75538 TSOP75338 sony lcd tv circuit diagram free TSOP753 TSOP75330 TSOP75333 TSOP75336 TSOP75340 TSOP75356 TSOP755

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4403CDY Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () ID (A)d 0.0155 at VGS = - 4.5 V - 13.4 VDS (V) - 20 0.0195 at VGS = - 2.5 V - 12 0.0250 at VGS = - 1.8 V - 10.5 • Halogen-free According to IEC 61249-2-21


    Original
    PDF Si4403CDY 2002/95/EC Si4403CDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si7674DP Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) 30 0.0033 at VGS = 10 V 40 0.0046 at VGS = 4.5 V 40 Qg (Typ.) 37 nC PowerPAK SO-8 S 6.15 mm 5.15 mm 1 APPLICATIONS S 2 • Halogen-free According to IEC 61249-2-21


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    PDF Si7674DP 2002/95/EC Si7674DP-T1-E3 Si7674DP-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: REVISIONS D fiA iV lS G MADE IN AMERICAN PH O iEC T'O N B1 COZ^Máx B2 REVISED PER ECO-09-0221 78 ECR-10-022530 i 1 DWN DATE DESCRIPTION LTR APVD AEG KK 25SEP09 14FEB11 KK HMR !=P Jio a jC C T <*8> 3í í r 0 0 5 C1lA $3 i / * i 0,1 s D1A" (S W ns %}—


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    PDF 25SEP09 ECO-09-0221 ECR-10-022530 14FEB11