OM6529SS
Abstract: OM6530SS
Text: OM6529SS OM6530SS INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC ISOLATED SIP PACKAGE 1000 Volt, 15 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • • • • • • • • Two Isolated IGBTs In A Hermetic SIP Package High Input Impedance
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OM6529SS
OM6530SS
MIL-S-19500,
OM6529SS
OM6530SS
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OM6531SS
Abstract: OM6532SS
Text: OM6531SS OM6532SS INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC ISOLATED SIP PACKAGE 1000 Volt, 15 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • • • • • • • • Two Isolated IGBTs In A Hermetic SIP Package High Input Impedance
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OM6531SS
OM6532SS
MIL-S-19500,
OM6531SS
OM6532SS
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UPS schematics
Abstract: 35 VOLT 3 AMP smps schematics OM6527SC OM6528SC
Text: OM6527SC OM6528SC INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-258AA PACKAGE 1000 Volt, 15 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • • • • • • • • Isolated IGBTs In A Hermetic Package High Input Impedance Low On-Voltage
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OM6527SC
OM6528SC
O-258AA
MIL-S-19500,
OM6527SC
UPS schematics
35 VOLT 3 AMP smps schematics
OM6528SC
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IGBT 50 amp 1000 volt
Abstract: CQ-111 100 Amp current 1300 volt diode 12 VOLT 100 AMP smps IGBT 250 amp smps 12 volt OM9038SF OM9039SF 12 VOLT 150 AMP smps 150 VOLT 10 AMP smps
Text: OM9038SF OM9039SF H-BRIDGE, MULTI-CHIP IGBT MODULE IN A HERMETIC ISOLATED PACKAGE 500 And 1000 Volt, 20 And 15 Amp IGBT Module With Soft Recovery Rectifier, H-Bridge Configuration FEATURES • • • • • • 12-Pin Hermetic Power Package Isolated Heat Sink Design
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OM9038SF
OM9039SF
12-Pin
IGBT 50 amp 1000 volt
CQ-111
100 Amp current 1300 volt diode
12 VOLT 100 AMP smps
IGBT 250 amp
smps 12 volt
OM9038SF
OM9039SF
12 VOLT 150 AMP smps
150 VOLT 10 AMP smps
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SMD Diode S140
Abstract: transistor a 949 100 Amp current 1300 volt diode DIODE SMD S140 JMV1206S450T551 250 B 340 smd Transistor JMV0603S300T101 JMV0805S180T351 JMV0402S5R6T301 JMV1812
Text: MULTILAYER CHIP VARISTOR RoHS JMV S & E Series: SMD Surge Protection ü INTRODUCTION FEATURES Metal Oxide based chip varistors (JMVs) are used for transient voltage suppression. JMVs have non-linear voltage-current behavior, which is similar to that of Zener Diode. Each grain in
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1812S380
1812S260
1812S220
00E-08
00E-07
00E-06
00E-05
00E-04
00E-03
00E-02
SMD Diode S140
transistor a 949
100 Amp current 1300 volt diode
DIODE SMD S140
JMV1206S450T551
250 B 340 smd Transistor
JMV0603S300T101
JMV0805S180T351
JMV0402S5R6T301
JMV1812
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Untitled
Abstract: No abstract text available
Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability at 125°C Ultra Low Thermal Resistance
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ISO-9001
MIL-PRF-38534
25KHz
MSK4357
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use igbt for 3 phase induction motor
Abstract: 3 phase brushless 400v
Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance
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ISO-9001
MIL-PRF-38534
25KHz
MSK4357
use igbt for 3 phase induction motor
3 phase brushless 400v
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Untitled
Abstract: No abstract text available
Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance
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ISO-9001
MIL-PRF-38534
25KHz
MSK4357
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MSK4357
Abstract: 1000 Amp current diode
Text: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance Integral Free Wheeling Fast Recovery Epitaxial Diode (FRED)
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MIL-PRF-38534
25KHz
MSK4357
1000 Amp current diode
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10 amp igbt 1000 volt
Abstract: No abstract text available
Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. 28 AMP, 500 VOLT IGBT PLUS DIODE SMART POWER 3-PHASE MOTOR DRIVE POWER HYBRID 4357 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 MIL-PRF-38534 CERTIFIED FEATURES: 500V, 28 Amp Capability Ultra Low Thermal Resistance
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ISO-9001
MIL-PRF-38534
25KHz
MSK4357
10 amp igbt 1000 volt
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15 amp 1000 Volt Diode
Abstract: 125OC
Text: SB039C015-0.5-W-Ag Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 0.5 Amp, 0.32VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier
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SB039C015-0
125OC
SCD0966-1
15 amp 1000 Volt Diode
125OC
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15 amp 1000 Volt Diode
Abstract: 125OC
Text: SB039C015-1-W-Ag Schottky cr Barrier Diode Wafer 39 Mils, 15 Volt, 1 Amp, 0.35VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier
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SB039C015-1-W-Ag
125OC
SCD0963-1
15 amp 1000 Volt Diode
125OC
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125OC
Abstract: SB035C015 15 amp 1000 Volt Diode
Text: SB035C015 - 0.5-W-Ag Schottky cr Barrier Diode Wafer 35 Mils, 15 Volt, 0.5 Amp, 0.33VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier
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SB035C015
125OC
SCD0962-1
125OC
15 amp 1000 Volt Diode
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125OC
Abstract: Schottky diode wafer
Text: SB035C015-1-W-Ag Schottky cr Barrier Diode Wafer 35 Mils, 15 Volt, 1 Amp, 0.36VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage Supplied as Wafers Chromium Barrier
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SB035C015-1-W-Ag
SB065C040-1-W-Ag
125OC
SCD0961-1
125OC
Schottky diode wafer
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MYXDS1200-15ABS
Abstract: silicon carbide
Text: Silicon Carbide Schottky Diode 1200 Volt 15 Amp Hermetic MYXDS1200-15ABS y r a in Product Overview Features Benefits • High voltage 1200V isolation in a small package outline • Essentially no switching losses • Higher efficiency • Reduction of heat sink requirements
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MYXDS1200-15ABS
O-257
MYXDS1200-15ABS
silicon carbide
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15 amp 1000 Volt Diode
Abstract: 106C015-30 125OC um99
Text: SB157/106C015-30-W-Ag/Al Schottky cr Barrier Diode Wafer 157 x 106 Mils, 15 Volt, 30 Amp, 0.38VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" or Cr-Al Suffix Al . Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage
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SB157/106C015-30-W-Ag/Al
125OC
SCD0981-1
15 amp 1000 Volt Diode
106C015-30
um99
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125OC
Abstract: No abstract text available
Text: SB157/106C015-20-W-Ag/Al Schottky cr Barrier Diode Wafer 157 x 106 Mils, 15 Volt, 20 Amp, 0.37VF. Data Sheet Features Cr-Al-Ni-Ag - Suffix "Ag" or Cr-Al Suffix Al . Oxide Passivated Junction Very Low Forward Voltage 125 º C Junction Operating Low Reverse Leakage
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SB157/106C015-20-W-Ag/Al
125OC
SCD0972-1
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Untitled
Abstract: No abstract text available
Text: OM6529SS OM653QSS INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC ISOLATED SIP PACKAGE 1000 Volt, 15 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Two Isolated IGBTs In A Hermetic SIP Package High Input Impedance Low On-Voltage High Current Capability
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OM6529SS
OM653QSS
MIL-S-19500,
150-C
OM6529SS
QM6530SS
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12 VOLT 150 AMP smps
Abstract: OM6531SS OM6532SS
Text: OM6531SS OM6532SS INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC ISOLATED SIP PACKAGE 1000 Volt, 15 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • Two Isolated IGBTs In A Hermetic SIP Package • High Input Impedance • Low On-Voltage
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OM6531SS
OM6532SS
MIL-S-19500,
-15Ap/S
12 VOLT 150 AMP smps
OM6532SS
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S 170 MOSFET TRANSISTOR
Abstract: 100 Amp current 1300 volt diode OM6529SS
Text: OM6529SS OM653QSS INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC ISOLATED SIP PACKAGE 1000 Volt, 15 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES Two Isolated IG BTs In A Hermetic SIP Package High Input Impedance Low On-Voltage High Current Capability
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OM6529SS
OM653QSS
MIL-S-19500,
S 170 MOSFET TRANSISTOR
100 Amp current 1300 volt diode
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Untitled
Abstract: No abstract text available
Text: OM6527SC OM6528SC INSULATED GATE BIPOLAR TRANSISTOR IGBT IN A HERMETIC TO-258AA PACKAGE n in 1000 Volt, 15 Amp, N-Channel IGBT In A Hermetic Metal Package FEATURES • • • • • • • • Isolated IGBTs In A Hermetic Package High Input Impedance
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OM6527SC
OM6528SC
O-258AA
MIL-S-19500,
OM6527SC
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OM9038SF
Abstract: OM9039SF 12 VOLT 100 AMP smps diode v3e
Text: OM9038SF OM9039SF H-BRIDGE, MULTI-CHIP IGBT MODULE IN A HERMETIC ISOLATED PACKAGE 500 And 1000 Volt, 20 And 15 Amp IGBT Module With Soft Recovery Rectifier, H-Bridge Configuration FEATURES • • • • • • 12-Pin Hermetic Power Package Isolated Heat Sink Design
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12-Pin
OM9038SF
0M9Q39SF
OM9039SF
12 VOLT 100 AMP smps
diode v3e
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Untitled
Abstract: No abstract text available
Text: OM9038SF OM9039SF H-BRIDGE, MULTI-CHIP IGBT MODULE IN A HERMETIC ISOLATED PACKAGE 500 And 1000 Volt, 20 And 15 Amp IGBT Module With Soft Recovery Rectifier, H-Bridge Configuration FEATURES • • • • • • 12-Pin Hermetic Power Package Isolated Heat Sink Design
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OM9038SF
OM9039SF
12-Pin
12PLCS.
305Oswfcud
534-5776FAX
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TRS601
Abstract: No abstract text available
Text: 3869720 GENERAL DIODE CORF ¿3 GTS C 07C 00250 D 7- 33 -^/ _ mLaondacto%± GENERAL DIODE CORP ~ 07 DE | 3öb17aD DDDOaSD 0 100 Ea m e s Stre e t < 6 1 7 J Ï7 2 -7 5 2 0 F r a m in g h a m , M a ss a c h u se t ts 0 1 7 0 1 SILICON NPN - Power Transistors
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b17aD
TRS601
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