syntron rectifier
Abstract: 2CL2FP SM3F HGUF10 WESTINGHOUSE RECTIFIERS ct 4a05 4a05 Syntron syntron diode 2CL106
Text: B D O O O N TH O T C R O EM P Y O VE Manufacturers of • ■ ■ ■ ■ CAN’T FIND WHAT YOU NEED? CALL US. CUSTOM DESIGN IS OUR SPECIALTY. HIGH VOLTAGE DIODES MOVS TVSS DEVICES SELENIUM SUPPRESSORS SILICON CARBIDE SUPPRESSORS ■ HIGH VOLTAGE HIGH CURRENT ASSEMBLIES
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Untitled
Abstract: No abstract text available
Text: WILLAS FM120-M+ SCS520STHRU FM1200-M+ SOD-523 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features Schottky barrier Diode process design, excellent power dissipation offers
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OD-523
OD-123+
FM120-M+
SCS520STHRU
FM1200-M+
OD-123H
FM120-MH
FM130-MH
FM140-MH
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schottky diode marking A7 SOD
Abstract: No abstract text available
Text: WILLAS FM120-M+ THRU DAN217U FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Package outline Features SWITCHING DIODE • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.
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OT-323
FM120-MH
FM130-MH
FM140-MH
FM150-MH
FM160-MH
FM180-MH
FM1100-MH
FM1150-MH
FM1200-MH
schottky diode marking A7 SOD
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1N5827
Abstract: 1N5828 1N5826 1N5827 equivalent 1N5828 equivalent
Text: MOTOROLA Order this document by 1N5826/D SEMICONDUCTOR TECHNICAL DATA Designer's Data Sheet 1N5826 1N5827 1N5828 Power Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal,
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1N5826/D
1N5826
1N5827
1N5828
1N5826
1N5828
1N5827
1N5827 equivalent
1N5828 equivalent
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MARKING CODE A25
Abstract: No abstract text available
Text: WILLAS FM120-M+ BAS70W-0x THRU FM1200-M+ SOT-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse
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OT-323
OD-123+
FM120-M+
BAS70W-0
FM1200-M+
OD-123H
FM120-MH
FM130-MH
FM140-MH
FM150-MH
MARKING CODE A25
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DIODE SOD-323 BAT54
Abstract: SOD323 diode schottky code marking 37
Text: WILLAS FM120-M+ BAT54:6THRU FM1200-M+ SOD-323 Plastic-Encapsulate Diodes 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse
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OD-323
OD-123+
FM120-M+
BAT54
FM1200-M+
OD-123H
FM120-MH
FM130-MH
FM140-MH
FM150-MH
DIODE SOD-323 BAT54
SOD323 diode schottky code marking 37
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bridge faston 250
Abstract: KBPC10 KBPC15 KBPC25 KBPC2504PF KBPC35 KBPC3508S KBPC25-04
Text: FCI Semiconductor KBPC10.35XX Series Preliminary Data Sheet 10 to 35 AMP Single Phase Silicon Bridges_ «« Description KBPC10.35XX Series KBPCXXXXS series KBPCXXXXMW KBPCXXXXPF KBPCXXXXPW Features O O O Built in Integral Heat Sink UL Recognition Available
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OCR Scan
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KBPC10.
KBPC25XX
bridge faston 250
KBPC10
KBPC15
KBPC25
KBPC2504PF
KBPC35
KBPC3508S
KBPC25-04
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CMSD2004S
Abstract: No abstract text available
Text: WILLAS FM120-M+ MMBD2004SW THRU SOT-323 Plastic-Encapsulate Diodes FM1200-M+ 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Pb Free Product SOD-123+ PACKAGE Package outline Features • Batch process design, excellent power dissipation offers better reverse
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FM120-M+
MMBD2004SW
OT-323
FM1200-M+
OD-123+
CMSD2004S
FM120-MH
FM130-MH
FM140-MH
FM150-MH
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1n5819 equivalent
Abstract: No abstract text available
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
1N5817
1N5818
1n5819 equivalent
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diode cross reference
Abstract: IN5408 equivalent DIOTEC Electronics IN5408 diode 1N4008 PBL302 rgp20 17 diode rectifier 1N4000 1n4004 1n4002 RP602 PBP205
Text: DIOTEC ELECTRONICS CORPORATION PRODUCT GUIDE TRUE VOID FREE VACUUM DIE SOLDERING SOFT GLASS DIODES HIGH VOLTAGE ULTRA FAST RECOVERY DISH DIODES TVS PRESS FIT WEB SITE: www.diotec-usa.com E-MAIL: [email protected] DIOTEC ELECTRONICS CORP. THE RECTIFIER SPECIALISTS
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Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP 5ÖE D 204^107 QQ001S7 0 ^ HIDIX DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 Data Sheet No.: FSDP-102-A1 0 3 '1 3 1 AMP FAST RECOVERY SILICON DIODES VOLTAGE RANGE 50 to 1000 Volts
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OCR Scan
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QQ001S7
FSDP-102-A1
DO-41
DO-41,
MIL-STD-202,
DB25/T
DB25/W
DB25P/T
DB25P/W
O-220
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Untitled
Abstract: No abstract text available
Text: E DIOTEr ELECTRONICS CORP SflE D DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax:(310)767-7958 • 2flim G7 GOODlbl S I T H I D I X Data Sheet No.: FSDP-102-A3 ' T ' ,0'3> 1 AMP HIGH RELIABILITY FAST RECOVERY DIODES
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OCR Scan
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FSDP-102-A3
DO-41
DB25/T
DB25/W
DB25P/T
DB25P/W
O-220
O-247)
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bridge faston 250
Abstract: diodes bridge 10 Amp KBPC2504PF KBPC10 KBPC10XX KBPC15 KBPC1502PWU KBPC25 KBPC35 KBPC3508MW
Text: KBPC10XX . . . 40XX Series 10 to 40 Amp SINGLE PHASE SILICON BRIDGE Data Sheet Description Features n BUILT-IN INTEGRAL HEAT SINK n UP TO 400 AMP SURGE OVERLOAD RATING n UL RECOGNITION AVAILABLE n OPTION OF WIRE LEADS OR FASTON TERMINALS Electrical Characteristics @ 25o C.
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KBPC10XX
KBPC10
KBPC15
KBPC25
KBPC35
KBPC40
bridge faston 250
diodes bridge 10 Amp
KBPC2504PF
KBPC10
KBPC10XX
KBPC15
KBPC1502PWU
KBPC25
KBPC35
KBPC3508MW
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diode marking 74 SOD123
Abstract: diode sod-123 marking code b3 schottky diode sod-123 marking code 120 sod123 B3 diode sod-123 marking code 120 ON SEMICONDUCTOR MARKING DIAGRAM SOD-123
Text: MBR0530T1, MBR0530T3 Preferred Devices Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR0530T1,
MBR0530T3
OD-123
OD-123
diode marking 74 SOD123
diode sod-123 marking code b3
schottky diode sod-123 marking code 120
sod123 B3
diode sod-123 marking code 120
ON SEMICONDUCTOR MARKING DIAGRAM SOD-123
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QRD2412001
Abstract: No abstract text available
Text: QRD2412001 120 Amp PRELIMINARY Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 724 925-7272 TM POW-R-BLOK Dual DIODE Module 120 Amperes / Up to 2400 Volts Description: Powerex Dual Diode Modules are designed for use in applications requiring rectification and isolated
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QRD2412001
QRD01
QRD2412001
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IN4004G
Abstract: IN4007g IN4001G IN4003G IN4006G 12,000 volt 50 amp diode 1N4002G IN4005G IN4007 DB3 748
Text: DIOTEC ELECTRONICS CORP r v T P U Á .L , SfiE ]> I 204^107 nix GG00137 ETO DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310) 767-7958 Data Sheet No.: GPPD-100-A 'T - D l - \ 3 1 AMP SOFT GLASS-PASSIVATED SILICON DIODES
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OCR Scan
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GG00137
GPPD-100-A
DO-41,
MIL-STD-202,
DB25/T
DB25/W
DB25P/T
DB25P/W
T0-220
O-247)
IN4004G
IN4007g
IN4001G
IN4003G
IN4006G
12,000 volt 50 amp diode
1N4002G
IN4005G
IN4007
DB3 748
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1N5817
Abstract: 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
r14525
1N5817/D
1N5817RL
1N5818
1N5818RL
1N5819RL
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1n5819 equivalent
Abstract: 1n5819
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
1N5817
1N5818
1n5819 equivalent
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datasheets diode 1n5818
Abstract: 1N5817 1N5817RL 1N5818 1N5818RL 1N5819 1N5819RL 1N5817-19
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
r14525
1N5817/D
datasheets diode 1n5818
1N5817RL
1N5818
1N5818RL
1N5819RL
1N5817-19
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Untitled
Abstract: No abstract text available
Text: DIOTEC ELECTRONICS CORP n T P u i . u SfiE ] • 204^107 GGGG137 ETO M P I X DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310)767-1052 Fax:(310) 767-7958 Data Sheet No.: GPPD-100-A <-t- oj i _ . o »• v 1 AMP SOFT GLASS-PASSIVATED SILICON DIODES
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OCR Scan
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GGGG137
GPPD-100-A
DO-41
DB25/T
DB25/W
DB25P/T
DB25P/W
O-220
O-247)
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Untitled
Abstract: No abstract text available
Text: DI OT EC E L E C T R O N I C S CORP SfiE V EflMTlO? GGOGIST ^bl « » I X DIOTEC ELECTRONICS CORP. 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 Data Sheet No.: FSDP-102-A2 ' - n 0 3 -1 3 1 AMP FAST RECOVERY SOFT GLASS-PASSIVATED DIODES
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OCR Scan
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FSDP-102-A2
DO-41
DO-41,
DB25/T
DB25/W
DB25P/T
DB25P/W
O-220
O-247)
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RP100G
Abstract: RP101G RP102G RP104G RP106G RP108G RP110G 275 A 23 200 E
Text: DIOTEC ELECTRONICS CORP SfiE V EflMTlO? GGOGIST ^bl « » I X DIOTEC ELECTRONICS CORP. Data Sheet No.: FSDP-102-A2 18020 Hobart Blvd., Unit B Gardena, CA 90248 Tel.: 310 767-1052 Fax: (310)767-7958 ' - n 0 3 -1 3 1 AMP FAST RECOVERY SOFT GLASS-PASSIVATED DIODES
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OCR Scan
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FSDP-102-A2
DO-41,
MIL-STD-202,
DB25/T
DB25/W
DB25P/T
DB25P/W
T0-220
O-247)
RP100G
RP101G
RP102G
RP104G
RP106G
RP108G
RP110G
275 A 23 200 E
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U840 diode motorola
Abstract: motorola u860 diode DIODE u1560 b2045 aka u1560 DIODE u860 diode u1560 diode U3J U820 diode fast recovery diode ses5001
Text: DL151/D Rev. 3, Nov-2000 Rectifier Device Data Rectifier Device Data DL151/D Rev. 3, Oct–2000 SCILLC, 2000 Previous Edition 1995 “All Rights Reserved’’ This book presents technical data for ON Semiconductor’s broad line of rectifiers. Complete specifications are provided in
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DL151/D
Nov-2000
r14525
U840 diode motorola
motorola u860 diode
DIODE u1560
b2045 aka
u1560 DIODE
u860 diode
u1560
diode U3J
U820 diode
fast recovery diode ses5001
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"Power Diode"
Abstract: 5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS 10 Ampere Schottky bridge 1N5817 diode FULL WAVE RECTIFIER CIRCUITS Full wave rectifier datasheet 1N5818RLG 1N5819 1N5817 1N5817G
Text: 1N5817, 1N5818, 1N5819 1N5817 and 1N5819 are Preferred Devices Axial Lead Rectifiers This series employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features chrome barrier metal, epitaxial construction with oxide passivation
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1N5817,
1N5818,
1N5819
1N5817
1N5819
1N5817/D
"Power Diode"
5.0 Amp. SCHOTTKY BRIDGE RECTIFIERS
10 Ampere Schottky bridge
1N5817 diode
FULL WAVE RECTIFIER CIRCUITS
Full wave rectifier datasheet
1N5818RLG
1N5817G
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