Untitled
Abstract: No abstract text available
Text: 15 dBm P1dB, 500 MHz to 18 GHz, Medium Power Broadband Amplifier, 33 dB Gain, SMA TECHNICAL DATA SHEET PE15A3263 The PE15A3263 is a 15 dBm power amplifier designed for operation in the 0.5 GHz to 18 GHz frequency range. The amplifier utilizes high power devices that provide excellent linearity and high gain. High efficiency operation is achieved by using hybrid
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PE15A3263
PE15A3263
band-amplifier-33-db-gain-sma-pe15a3263-p
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S8851
Abstract: TOSHIBA MICROWAVE AMPLIFIER toshiba control code
Text: TOSHIBA S8851 MICROWAVE POWER GaAs FET Power GaAs FETs Packaged Features • High power - P1dB = 24 dBm at f = 15 GHz • High gain - G1dB = 8 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)
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S8851
15GHz
S8851
TOSHIBA MICROWAVE AMPLIFIER
toshiba control code
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S8850A
Abstract: S8850 S-8850
Text: TOSHIBA S8850A MICROWAVE POWER GaAs FET Power GaAs FETs Packaged Features • High power - P1dB = 21.5 dBm at f = 15 GHz • High gain - G1dB = 9.0 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)
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S8850A
S8850A
S8850
S-8850
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S8855
Abstract: TOSHIBA MICROWAVE AMPLIFIER toshiba fet toshiba control code
Text: TOSHIBA S8855 MICROWAVE POWER GaAs FET Power GaAs FETs Packaged Features • High power - P1dB = 31.5 dBm at f = 15 GHz • High gain - G1dB = 6.5 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)
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S8855
15GHz
S8855
TOSHIBA MICROWAVE AMPLIFIER
toshiba fet
toshiba control code
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toshiba fet
Abstract: S8853 toshiba control code
Text: TOSHIBA S8853 MICROWAVE POWER GaAs FET Power GaAs FETs Packaged Features • High power - P1dB = 28 dBm at f = 15 GHz • High gain - G1dB = 7 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)
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S8853
15GHz
S8853
toshiba fet
toshiba control code
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Untitled
Abstract: No abstract text available
Text: Model # BXHF1083 High Frequency Microwave Amplifier Frequency Range: 5-15 GHz Features • High Frequency and Broad Bandwidth: 5-15 GHz • High Output Power: 26 dBm Typical • Laser Welded Housing for Ultimate Environmental Protection • Internal Voltage Regulator
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BXHF1083
BXHF1083
MIL-STD-883
SXHF1083.
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HMMC-5003
Abstract: agilent HMMC
Text: 4 GHz Wideband Preamplifier/Amplifier Technical Data HMMC-5003 Features • Frequency Range: DC – 4 GHz • Flat Response: ±0.75 dB 5 MHz – 4 GHz • High Gain: 11 dB • High Isolation: -37 dB • Return Loss: Input -15 dB Output -15 dB • High Power Output:
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HMMC-5003
HMMC-5003
5968-4445E
agilent HMMC
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chip die npn transistor
Abstract: ma4t856
Text: Moderate Power High fT NPN Silicon Transistor MA4T856 Series V3.00 Package Outline Features • High Output Power - 16 dBm P1dB @ 1 GHz - 10 dBm P1dB @ 2 GHz • High Gain Bandwidth Product • 8-9 GHz fT • High Power Gain - |S21E|2 = 15 dB @ 1 GHz - |S21E|2 = 9 dB @ 2 GHz
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MA4T856
OT-23
OT-143
chip die npn transistor
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Untitled
Abstract: No abstract text available
Text: Moderate Power High fT NPN Silicon Transistor MP4T856 Series Package Outline Features • High Output Power - 16 dBm P1dB @ 1 GHz - 10 dBm P1dB @ 2 GHz • High Gain Bandwidth Product • 8-9 GHz fT • High Power Gain - |S21E|2 = 15 dB @ 1 GHz - |S21E|2 = 9 dB @ 2 GHz
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MP4T856
OT-23
OT-143
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Untitled
Abstract: No abstract text available
Text: SLNA-180-30-35-SMA DATA SHEET 500 MHz to 18 GHz, Medium Power Broadband Amplifier with 15 dBm, 33 dB Gain and SMA SLNA-180-30-35-SMA is a 15 dBm power amplifier designed for operation in the 0.5 GHz to 18 GHz frequency range. The amplifier utilizes high power devices that
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SLNA-180-30-35-SMA
SLNA-180-30-35-SMA
12Volts,
220mA)
-broadband-amplifier-slna-180-30-35-sma-p
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AM42-0040
Abstract: CR-15
Text: GaAs MMIC VSAT Power Amplifier, 2W, 5.9-6.4 GHz AM42-0040 AM42-0040 GaAs MMIC VSAT Power Amplifier, 2W 5.9 - 6.4 GHz Features • • • • • CR-15 High Linear Gain: 30 dB Typ. High Saturated Output Power: +33 dBm Typ. High Power Added Efficiency: 26% Typ.
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AM42-0040
CR-15
AM42-0040
CR-15
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AM42-0039
Abstract: CR-15
Text: GaAs MMIC VSAT Power Amplifier, 2W, 6.40-7.025 GHz AM42-0039 AM42-0039 GaAs MMIC VSAT Power Amplifier, 2W 6.40 - 7.025 GHz Features • • • • • CR-15 High Linear Gain: 30 dB Typ. High Saturated Output Power: +33 dBm Typ. High Power Added Efficiency: 22% Typ.
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AM42-0039
CR-15
AM42-0039
CR-15
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AM42-0041
Abstract: CR-15 IDS500
Text: GaAs MMIC VSAT Power Amplifier, 0.5W, 14.0-14.5 GHz AM42-0041 AM42-0041 GaAs MMIC VSAT Power Amplifier, 0.5W 14.0 - 14.5 GHz Features • • • • • CR-15 High Linear Gain: 28 dB Typ. High Saturated Output Power: +28 dBm Typ. High Power Added Efficiency: 22% Typ.
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AM42-0041
CR-15
AM42-0041
CR-15
IDS500
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET S8855 Power GaAs FETs Chip Form Features • High power - P1dB = 31.5 dBm at f= 15 GHz • High gain - G idB = 6.5 dB a tf = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)
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S8855
15GHz
002221b
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET S8851 Power GaAs FETs Chip Form Features • High power - PidB = 24 dBm a tf = 15 GHz • High gain - G-|dB —8 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)
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S8851
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET S8853 Power GaAs FETs Chip Form Features • High power - P idB = 28 dBm at f= 15 GHz • High gain - GidB = 7 dB at f = 15 GHz • Suitable for Ku-Bar\d amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)
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S8853
15GHz
S8853
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A1203
Abstract: JS8851-AS MW1011
Text: TOSHIBA MICROWAVE POWER GaAs FET JS8851-AS Power GaAs FETs Chip Form Features • High power - P1dB = 24 dBm at f = 15 GHz • High gain - G1dB = 8 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)
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JS8851-AS
24dBmatf
15GHz
18GHz
15GHz
A1203
JS8851-AS
MW1011
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S8850A
Abstract: S8850 Microwave Semiconductor s88
Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8850A TECHNICAL DATA FEATURES: • HIGH POWER P^cjB = 21.5dBm at f = 15 GHz ■ SUITABLE FOR Ku-BAND AMPLIFIER ■ HIGH GAIN G1dB = 9 . ° dB at f = 15 GHz ■ ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C
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S8850A
S885QA
S8850A
S8850
Microwave Semiconductor s88
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S8853
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8853 TECHNICAL DATA FEATURES: • ■ HIGH POWER P-jdB = 2 8 dBm at f = 15 GHz HIGH GAIN G1dB = 7 dB at f = 15 GHz ■ SUITABLE FOR Ku-BAND AMPLIFIER ■ ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C
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S8853
S8853
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S8851
Abstract: S885T
Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8851 TECHNICAL DATA FEATURES: • HIGH POWER P^dB“ 24 dBm at f = 15 GHz ■ ■ HIGH GAIN G1dB = 8 dB ■ SUITABLE FOR Ku-BAND AMPLIFIER ION IMPLANTATION at f = 15 GHz RF PERFORMANCE SPECIFICATIONS Ta = 25° C
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S8851
S885T
15GHz
S8851
S885T
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S8855
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR S8855 TECHNICAL DATA FEATURES: • ■ HIGH POWER p1 d B ~ 31.5 dBm at f = 15 GHz HIGH GAIN G|dB = 6.5 dB at f = 15 GHz SUITABLE FOR Ku-BAND AMPLIFIER ION IMPLANTATION RF PERFORMANCE SPECIFICATIONS Ta = 25° C
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S8855
15GHz
-S8855-
S8855
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET JS8853-AS Power GaAs FETs Chip Form Features • High power - P1dB = 28 dBm at f = 15 GHz • High gain - G1de = 7 d B a t f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)
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JS8853-AS
18GHz
15GHz
MW10120196
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET JS8850A-AS Power GaAs FETs Chip Form Features • High power - P-idB = 21.5 dBm at f = 15 GHz • High gain - G1dB = 9 d B a t f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)
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JS8850A-AS
15GHz
18GHz
H7E50
MW10100196
TGT72SÃ
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PC2708T
Abstract: No abstract text available
Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT «PC2708T 2.9 GHz MIDDLE POWER WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • High power gain 15 dB TYP. @ f = 1 GHz Excellent frequency response: 2.9 Ghz TYP. @ 3 dB down below the gain at 0.1 GHz
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PC2708T
//PC2708T-E3
P15-00-3
WS60-00-1
C10535E)
PC2708T
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