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    15 GHZ POWER AMPLIFIER Search Results

    15 GHZ POWER AMPLIFIER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation

    15 GHZ POWER AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SLNA-180-30-35-SMA DATA SHEET 500 MHz to 18 GHz, Medium Power Broadband Amplifier with 15 dBm, 33 dB Gain and SMA SLNA-180-30-35-SMA is a 15 dBm power amplifier designed for operation in the 0.5 GHz to 18 GHz frequency range. The amplifier utilizes high power devices that


    Original     		PDF SLNA-180-30-35-SMA SLNA-180-30-35-SMA 12Volts, 220mA) -broadband-amplifier-slna-180-30-35-sma-p

    isolator 2 2.1 GHz

    Abstract: No abstract text available
    Text: HMC-C008 v05.1007 AMPLIFIERS 1 15 WATT POWER AMPLIFIER MODULE, 1.8 - 2.2 GHz Features P1dB Output Power: 15 Watts from 1.8 to 2.2 GHz Gain: 40 dB min Noise Figure: 6 dB Thermally Compensated and Protected Reverse Polarity Protected TTL DC Power Enable Unconditionally Stable


    Original     		PDF HMC-C008 HMC-C008 6061-T6 MIL-C-5541, HMC-C008HV115 HMC-C008HV230 isolator 2 2.1 GHz

    isolator 2 2.1 GHz

    Abstract: No abstract text available
    Text: OBSOLETE PRODUCT HMC-C008 v05.1007 15 WATT POWER AMPLIFIER MODULE, 1.8 - 2.2 GHz AMPLFIERS Features P1dB Output Power: 15 Watts from 1.8 to 2.2 GHz Gain: 40 dB min Noise Figure: 6 dB Thermally Compensated and Protected Reverse Polarity Protected TTL DC Power Enable


    Original     		PDF HMC-C008 HMC-C008 6061-T6 MIL-C-5541, HMC-C008HV115 HMC-C008HV230 isolator 2 2.1 GHz

    2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

    Abstract: 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM HMC-C008 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM microwave isolator 15 watt power supply circuit diagram
    Text: HMC-C008 v03.1205 AMPLIFIERS - CONNECTORIZED MODULES 9 15 WATT POWER AMPLIFIER MODULE, 1.8 - 2.2 GHz Features P1dB Output Power: 15 Watts from 1.8 to 2.2 GHz Gain: 40 dB min Noise Figure: 6 dB Thermally Compensated and Protected Reverse Polarity Protected


    Original     		PDF HMC-C008 HMC-C008 MIL-C-5541, HMC-C008HV115 HMC-C008HV230 2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM microwave isolator 15 watt power supply circuit diagram

    microwave amplifier 2.4 ghz 10 watts

    Abstract: isolator 2 2.1 GHz
    Text: HMC-C008 v03.1205 AMPLIFIERS - CONNECTORIZED MODULES 16 15 WATT POWER AMPLIFIER MODULE, 1.8 - 2.2 GHz Features P1dB Output Power: 15 Watts from 1.8 to 2.2 GHz Gain: 40 dB min Noise Figure: 6 dB Thermally Compensated and Protected Reverse Polarity Protected


    Original     		PDF HMC-C008 HMC-C008 6061-T6 MIL-C-5541, HMC-C008HV115 HMC-C008HV230 microwave amplifier 2.4 ghz 10 watts isolator 2 2.1 GHz

    circulator 2.3 2.7 GHz

    Abstract: HMC-C008 2 Watt rf Amplifier 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 15 watt power supply circuit diagram
    Text: HMC-C008 v05.1007 CONNECTORIZED MODULES - AMPLIFIERS 9 15 WATT POWER AMPLIFIER MODULE, 1.8 - 2.2 GHz Features P1dB Output Power: 15 Watts from 1.8 to 2.2 GHz Gain: 40 dB min Noise Figure: 6 dB Thermally Compensated and Protected Reverse Polarity Protected


    Original     		PDF HMC-C008 HMC-C008 MIL-C-5541, HMC-C008HV115 HMC-C008HV230 circulator 2.3 2.7 GHz 2 Watt rf Amplifier 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 15 watt power supply circuit diagram

    2.4 GHz rf amplifier 100w

    Abstract: 50 watt amplifier circuit diagram 15 watt power supply circuit diagram HMC-C008 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 2.4 ghz 20 WATTS POWER AMPLIFIER SCHEMATIC 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC 2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM
    Text: HMC-C008 v04.0906 AMPLIFIERS 1 15 WATT POWER AMPLIFIER MODULE, 1.8 - 2.2 GHz Features P1dB Output Power: 15 Watts from 1.8 to 2.2 GHz Gain: 40 dB min Noise Figure: 6 dB Thermally Compensated and Protected Reverse Polarity Protected TTL DC Power Enable Unconditionally Stable


    Original     		PDF HMC-C008 HMC-C008 6061-T6 MIL-C-5541, HMC-C008HV115 HMC-C008HV230 2.4 GHz rf amplifier 100w 50 watt amplifier circuit diagram 15 watt power supply circuit diagram 2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM 2.4 ghz 20 WATTS POWER AMPLIFIER SCHEMATIC 2.4 ghz 50 WATTS POWER AMPLIFIER SCHEMATIC 2.4 ghz 4 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

    S8851

    Abstract: TOSHIBA MICROWAVE AMPLIFIER toshiba control code
    Text: TOSHIBA S8851 MICROWAVE POWER GaAs FET Power GaAs FETs Packaged Features • High power - P1dB = 24 dBm at f = 15 GHz • High gain - G1dB = 8 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    Original     		PDF S8851 15GHz S8851 TOSHIBA MICROWAVE AMPLIFIER toshiba control code

    S8850A

    Abstract: S8850 S-8850
    Text: TOSHIBA S8850A MICROWAVE POWER GaAs FET Power GaAs FETs Packaged Features • High power - P1dB = 21.5 dBm at f = 15 GHz • High gain - G1dB = 9.0 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    Original     		PDF S8850A S8850A S8850 S-8850

    S8855

    Abstract: TOSHIBA MICROWAVE AMPLIFIER toshiba fet toshiba control code
    Text: TOSHIBA S8855 MICROWAVE POWER GaAs FET Power GaAs FETs Packaged Features • High power - P1dB = 31.5 dBm at f = 15 GHz • High gain - G1dB = 6.5 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    Original     		PDF S8855 15GHz S8855 TOSHIBA MICROWAVE AMPLIFIER toshiba fet toshiba control code

    LP3000

    Abstract: LP3000P100 LP3000-P100-1 LP3000-P100-2 LP3000-P100-3 filtronic Solid State
    Text: Filtronic LP3000P100 PACKAGED 2W POWER PHEMT Solid State FEATURES • • • • GATE +33.0 dBm Typical Power at 15 GHz 10 dB Typical Power Gain at 15 GHz Low Intermodulation Distortion 45% Power-Added-Efficiency SOURCE DRAIN DESCRIPTION AND APPLICATIONS


    Original     		PDF LP3000P100 LP3000P100 LP3000 MIL-STD-1686 MIL-HDBK-263. DSS-028 LP3000-P100-1 LP3000-P100-2 LP3000-P100-3 filtronic Solid State

    toshiba fet

    Abstract: S8853 toshiba control code
    Text: TOSHIBA S8853 MICROWAVE POWER GaAs FET Power GaAs FETs Packaged Features • High power - P1dB = 28 dBm at f = 15 GHz • High gain - G1dB = 7 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    Original     		PDF S8853 15GHz S8853 toshiba fet toshiba control code

    Untitled

    Abstract: No abstract text available
    Text: 15 dBm P1dB, 500 MHz to 18 GHz, Medium Power Broadband Amplifier, 33 dB Gain, SMA TECHNICAL DATA SHEET PE15A3263 The PE15A3263 is a 15 dBm power amplifier designed for operation in the 0.5 GHz to 18 GHz frequency range. The amplifier utilizes high power devices that provide excellent linearity and high gain. High efficiency operation is achieved by using hybrid


    Original     		PDF PE15A3263 PE15A3263 band-amplifier-33-db-gain-sma-pe15a3263-p

    Untitled

    Abstract: No abstract text available
    Text: HMC-C021 v01.0906 WIDEBAND POWER AMPLIFIER MODULE, 21 - 31 GHz AMPLIFIERS 1 Features Gain: 15 dB @ 27 GHz P1dB Output Power: +24 dBm @ 27 GHz Noise Figure: 5 dB @ 27 GHz Spurious-Free Operation ypical Applications Typical Regulated Supply and Bias Sequencing


    Original     		PDF HMC-C021 HMC-C020 HMC-C021

    chip 66 low noise amplifier

    Abstract: No abstract text available
    Text: HMC462 v00.0703 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC462 Wideband LNA is ideal for: Noise Figure: 2 dB @ 10 GHz • Telecom Infrastructure Gain: 15 dB • Microwave Radio & VSAT P1dB Output Power: +15 dBm @ 10 GHz


    Original     		PDF HMC462 HMC462 025mm chip 66 low noise amplifier

    HMC-C020

    Abstract: HMC-C021
    Text: HMC-C021 v01.0906 WIDEBAND POWER AMPLIFIER MODULE, 21 - 31 GHz AMPLIFIERS 1 Features Gain: 15 dB @ 27 GHz P1dB Output Power: +24 dBm @ 27 GHz Noise Figure: 5 dB @ 27 GHz Spurious-Free Operation Typical Applications Regulated Supply and Bias Sequencing Hermetically Sealed Module


    Original     		PDF HMC-C021 HMC-C020 HMC-C021

    schematic diagram 32 VDC POWER SUPPLY

    Abstract: HMC-C020 HMC-C021
    Text: HMC-C021 v01.0906 WIDEBAND POWER AMPLIFIER MODULE, 21 - 31 GHz CONNECTORIZED MODULES - AMPLIFIERS 9 Features Gain: 15 dB @ 27 GHz P1dB Output Power: +24 dBm @ 27 GHz Noise Figure: 5 dB @ 27 GHz Spurious-Free Operation ypical Applications Typical Regulated Supply and Bias Sequencing


    Original     		PDF HMC-C021 HMC-C020 HMC-C021 schematic diagram 32 VDC POWER SUPPLY

    Untitled

    Abstract: No abstract text available
    Text: HMC-C021 v03.0310 WIDEBAND POWER AMPLIFIER MODULE, 21 - 31 GHz AMPLIFIERS 1 Features Gain: 15 dB @ 27 GHz P1dB Output Power: +24 dBm @ 27 GHz Noise Figure: 5 dB @ 27 GHz Spurious-Free Operation Typical Applications Regulated Supply and Bias Sequencing Hermetically Sealed Module


    Original     		PDF HMC-C021 HMC-C020 HMC-C021 231CCSF

    Untitled

    Abstract: No abstract text available
    Text: HMC462 v00.0703 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 2.0 - 20.0 GHz AMPLIFIERS - CHIP 1 Typical Applications Features The HMC462 Wideband LNA is ideal for: Noise Figure: 2 dB @ 10 GHz • Telecom Infrastructure Gain: 15 dB • Microwave Radio & VSAT P1dB Output Power: +15 dBm @ 10 GHz


    Original     		PDF HMC462 HMC462 025mm

    Untitled

    Abstract: No abstract text available
    Text: HMC-C021 v00.0606 WIDEBAND POWER AMPLIFIER MODULE, 21 - 31 GHz AMPLIFIERS 1 Features Gain: 15 dB @ 27 GHz P1dB Output Power: +24 dBm @ 27 GHz Noise Figure: 5 dB @ 27 GHz Spurious-Free Operation Typical Applications Regulated Supply and Bias Sequencing Hermetically Sealed Module


    Original     		PDF HMC-C021 HMC-C020 HMC-C021

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET S8855 Power GaAs FETs Chip Form Features • High power - P1dB = 31.5 dBm at f= 15 GHz • High gain - G idB = 6.5 dB a tf = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF S8855 15GHz 002221b

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET S8850A Power GaAs FETs Chip Form Features • High power - pidB = 21.5 dBm a tf = 15 GHz • High gain - G-^g = 9.0 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF S8850A 222D1

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET S8851 Power GaAs FETs Chip Form Features • High power - PidB = 24 dBm a tf = 15 GHz • High gain - G-|dB —8 dB at f = 15 GHz • Suitable for Ku-Band amplifier • Ion implantation RF Performance Specifications (Ta = 25° C)


    OCR Scan     		PDF S8851

    PC2708T

    Abstract: No abstract text available
    Text: DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUIT «PC2708T 2.9 GHz MIDDLE POWER WIDE BAND AMPLIFIER SILICON BIPOLAR MONOLITHIC INTEGRATED CIRCUIT FEATURES • High power gain 15 dB TYP. @ f = 1 GHz Excellent frequency response: 2.9 Ghz TYP. @ 3 dB down below the gain at 0.1 GHz


    OCR Scan     		PDF PC2708T //PC2708T-E3 P15-00-3 WS60-00-1 C10535E) PC2708T