15 GHZ POWER AMPLIFIER OUTPUT POWER 37DBM Search Results

15 GHZ POWER AMPLIFIER OUTPUT POWER 37DBM Result Highlights (5)

Part	Manufacturer	Description
MGN1S1208MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-8V GAN
MGN1D120603MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-6/-3V GAN
MGN1S1212MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 12-12V GAN
MGN1S0508MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-8V GAN
MGN1S0512MC-R7	Murata Manufacturing Co Ltd	DC-DC 1W SM 5-12V GAN

15 GHZ POWER AMPLIFIER OUTPUT POWER 37DBM Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: TGA2594 27-31GHz 5W GaN Power Amplifier Applications • Satellite Communications Product Features          Functional Block Diagram Frequency Range: 27 – 31GHz Psat: 37dBm typical across frequency PAE: 28% Small Signal Gain: 23dB	Original	TGA2594 27-31GHz 31GHz 37dBm 25dBm/tone: -36dBc -45dBc 140mA, TGA2594	PDF
FMM5826X Abstract: Ka-band ED-4701 Text: FMM5826X Ka-Band Power Amplifier MMIC FEATURES •High Output Power; P1dB = 28 dBm Typ. •High Linear Gain; GL = 21 dB(Typ.) •Frequency Band ; 27.0 - 30.0 GHz •High Linearity ; OIP3 = 37dBm(typ.) •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5826X is a power amplifier MMIC that contains a threestage amplifier, internally matched, for standard communications	Original	FMM5826X 37dBm FMM5826X 1906B, Ka-band ED-4701	PDF
CGB8002-SC Abstract: CGB8002-SC-0G00 CGB8002-SC-0G0T Text: DC-2.8 GHz InGaP HBT 3.3V, Matched Gain Block Amplifier April 2008 - Rev 28-Apr-08 CGB8002-SC Features Functional Block Diagram SOT-89 14 dBm Linear Power @ 2140 MHz 17 dB Gain @ 2140 MHz 15 dB Gain @ 2700 MHz 37dBm OIP3 @ 2700 MHz 22 dBm P1dB @ 2140 MHz	Original	28-Apr-08 CGB8002-SC 37dBm OT-89 CGB8002-SC CGB8002-SC-0G00 CGB8002-SC-0G0T	PDF
Bookham Abstract: NN12 P35-5130-000-200 15 GHz power amplifier Output Power 37dBm Text: Data sheet Engineering Datasheet 8.5 – 10.5GHz Power Amplifier Features • 15dB Gain Typical • P-1dB; 37dBm typical @ 9.5GHz The P35-5130-000-200 is a high performance 8.510.5GHz Gallium Arsenide power amplifier, capable of output powers of 5 Watts. The die is fabricated using Caswell Technology's 0.20µm	Original	37dBm P35-5130-000-200 P35-5130-000-200 Retu56 462/SM/03248/200 Bookham NN12 15 GHz power amplifier Output Power 37dBm	PDF
"p1db 37dbm" Abstract: TGA1172 Text: Advance Product Information March 21, 2000 27 - 32 GHz 1W Power Amplifier TGA1172 Key Features • 0.25 um pHEMT Technology • 18 dB Gain at 28 GHz • 29 dBm Nominal P1dB • 37dBm OTOI typical at 28GHz • Input/Output RL < -10 dB • Bias 6 - 7V @ 630 mA	Original	TGA1172 37dBm 28GHz 0007-inch "p1db 37dbm" TGA1172	PDF
VP610 Abstract: TGA4502-EPU Text: Advance Product Information June 18th, 2002 17 - 27 GHz High Power Amplifier TGA4502-EPU Key Features • • • • • • • 0.25 um pHEMT Technology 22 dB Nominal Gain 29 dBm Nominal P1dB 37dBm Nominal OTOI 15 dB Nominal Return Loss Bias 7V @ 750 mA	Original	TGA4502-EPU 37dBm 750mA 0007-inch VP610 TGA4502-EPU	PDF
2068d Abstract: 05353 2068 D wafer 60g 3 diamonds manual 44033 amplifier FMA3011 MIL-HDBK-263 15 GHz power amplifier Output Power 37dBm d2bb Text: FMA3011 12.7-16GHZ MMIC POWER AMPLIFIER Datasheet v3.2 FUNCTIONAL SCHEMATIC: FEATURES: • • • • • Balanced Topology 37dBm OIP3 30dB Gain Input Return Loss <-15dB Output Return Loss <-15dB VDD RF Input RF Output GENERAL DESCRIPTION: The FMA3011 is a high performance 12.716GHz Gallium Arsenide monolithic power	Original	FMA3011 7-16GHZ 37dBm -15dB FMA3011 716GHz coupl60g. 2068d 05353 2068 D wafer 60g 3 diamonds manual 44033 amplifier MIL-HDBK-263 15 GHz power amplifier Output Power 37dBm d2bb	PDF
ImS21 Abstract: FMA3011 15100000 214-3556 2068d Text: FMA3011 Datasheet v4.0 12.7-16GHZ MMIC POWER AMPLIFIER FUNCTIONAL SCHEMATIC: FEATURES: • • • • • Balanced Topology 37dBm OIP3 30dB Gain Input Return Loss <-15dB Output Return Loss <-15dB VDD RF Input RF Output GENERAL DESCRIPTION: The FMA3011 is a high performance 12.716GHz Gallium Arsenide monolithic power	Original	FMA3011 7-16GHZ 37dBm -15dB FMA3011 716GHz ImS21 15100000 214-3556 2068d	PDF
mmics Abstract: No abstract text available Text: AM204437WM-BM-R AM204437WM-FM-R Aug 2010 Rev 4 GaAs MMIC Power Amplifier DESCRIPTION AMCOM’s AM204437WM-BM/FM-R is part of the GaAs MMIC power amplifier series. It has 30dB gain and 37dBm output power over the 2.2 to 4.2GHz band. This MMIC is in a ceramic package with both RF and DC leads at the	Original	AM204437WM-BM-R AM204437WM-FM-R AM204437WM-BM/FM-R 37dBm AN700 AM204437WM-FM-R 100mA, 300mA 1400mA mmics	PDF
2068D Abstract: 2068 d ImS21 FMA3011 MIL-HDBK-263 141259 214-3556 Text: FMA3011 Preliminary Datasheet v2.1 12.7-16GHZ MMIC POWER AMPLIFIER FEATURES: • • • • • FUNCTIONAL SCHEMATIC: Balanced Topology 37dBm OIP3 30dB Gain Input Return Loss < -15dB Output Return Loss < -15dB VDD RF Input RF Output GENERAL DESCRIPTION: The FMA3011 is a high performance 12.716GHz Gallium Arsenide monolithic power	Original	FMA3011 7-16GHZ 37dBm -15dB FMA3011 716GHz 22A114. MIL-STD-1686 MIL-HDBK-263. 2068D 2068 d ImS21 MIL-HDBK-263 141259 214-3556	PDF
Untitled Abstract: No abstract text available Text: AM204437WM-BM-R March 2008 Rev. 2 DESCRIPTION AMCOM’s AM204437WM-BM-R is part of the GaAs MMIC power amplifier series. It has 30dB gain, 37dBm output power over the 2.2 to 4.2 GHz band. This MMIC is in a ceramic package with both RF and DC leads at the bottom level of the package to facilitate low-cost SMT assembly to the PC board. This MMIC is RoHS compliant.	Original	AM204437WM-BM-R AM204437WM-BM-R 37dBm 50-ohm 1800mA, 10mils 100mA, 300mA 1400mA	PDF
Untitled Abstract: No abstract text available Text: AM204437WM-BM-R August 2007 Rev. 1 DESCRIPTION AMCOM’s AM204437WM-BM-R is part of the GaAs MMIC power amplifier series. It has 30dB gain, 37dBm output power over the 2.2 to 4.2 GHz band. This MMIC is in a ceramic package with both RF and DC leads at the	Original	AM204437WM-BM-R AM204437WM-BM-R 37dBm 50-ohm 1800mA, 10mils 100mA, 300mA 1400mA	PDF
Untitled Abstract: No abstract text available Text: TGA2586-FL 7.9 – 8.4 GHz 50W GaN Power Amplifier Applications • Satellite Communications Product Features         Functional Block Diagram Frequency Range: 7.9 – 8.4 GHz PSAT: 47 dBm CW P1dB: 43 dBm PAE: 36% Small Signal Gain: 14 dB	Original	TGA2586-FL TGA2586-FL 47dBm	PDF
Untitled Abstract: No abstract text available Text: AM204437WM-BM-R AM204437WM-FM-R December 2008 Rev. 3 DESCRIPTION AMCOM’s AM204437WM-BM-R and AM204437WM-FM-R are part of the GaAs MMIC power amplifier series. Both MMICs have 30dB gain, 37dBm output power over the 2.2 to 4.2 GHz band. These MMIC are in a ceramic	Original	AM204437WM-BM-R AM204437WM-FM-R AM204437WM-BM-R AM204437WM-FM-R 37dBm 10mils 100mA, 300mA 1400mA	PDF

diode p1000 Abstract: P1000 diode OC 140 germanium transistor sl353 P1000 84-1LMI XP1000 XU1000 pHEMT transistor MTBF gold detector circuit diagram Text: 17.0-24.0 GHz GaAs MMIC Power Amplifier P1000 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent for Modulations up to 64 QAM High Linearity Output Amplifier Balanced Design Provides Good Input/Output Match On-Chip Temperature Compensated Output Power Detector	Original	P1000 01-May-02 MIL-STD-883 diode p1000 P1000 diode OC 140 germanium transistor sl353 P1000 84-1LMI XP1000 XU1000 pHEMT transistor MTBF gold detector circuit diagram	PDF
B1001 Abstract: XB1001 XP1000 XU1000 Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1001 May 2003 - Rev 10-May-03 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 20.0 dB Small Signal Gain 3.0 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing	Original	B1001 10-May-03 MIL-STD-883 B1001 XB1001 XP1000 XU1000	PDF
B1000 Abstract: Mimix xb1000 Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1000 May 2003 - Rev 10-May-03 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.8 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing	Original	10-May-03 B1000 MIL-STD-883 Mimix xb1000	PDF
B1000 Abstract: Mimix xb1000 XU1000 pHEMT transistor MTBF Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1000 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 21.0 dB Small Signal Gain 2.8 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing	Original	B1000 01-May-02 MIL-STD-883 B1000 Mimix xb1000 XU1000 pHEMT transistor MTBF	PDF
XB1001 Abstract: 84-1LMI B1001 XP1000 XU1000 GERMANIUM SMALL SIGNAL TRANSISTORS Text: 17.0-27.0 GHz GaAs MMIC Buffer Amplifier B1001 May 2002 - Rev 01-May-02 Features Chip Device Layout Excellent LO Driver/Buffer Amplifier Low Noise or Power Bias Configurations 20.0 dB Small Signal Gain 3.0 dB Noise Figure +13 dBm P1dB Compression Point 100% On-Wafer RF, DC and Noise Figure Testing	Original	B1001 01-May-02 MIL-STD-883 XB1001 84-1LMI B1001 XP1000 XU1000 GERMANIUM SMALL SIGNAL TRANSISTORS	PDF
TA081-083-30-37 Abstract: No abstract text available Text: TA081-083-30-37 REV1_20040412 8.1 – 8.3 GHz 37dBm Power Amplifier FEATURES • P1dB: 37 dBm • Noise Figure: 5 dB • Small Signal Gain: 30 dB • Bias Condition: 3.7A @ 12 V ELECTRICAL SPECIFICATIONS SYMBOL DESCRIPTION MIN Frequency Range 8.1 SSG Small Signal Gain @ 25°C	Original	TA081-083-30-37 37dBm TA081-083-30-37	PDF
Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications Abstract: CGH55030 CGH55030-TB Tower Mounted Amplifiers GaN Bias 25 watt cgh55015 CGH55015-TB RO4350 rogers MICROWAVE TRANSISTOR Text: Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications Bradley J. Millon1, Simon M. Wood, Raymond S. Pengelly Cree Inc. 3026 E Cornwallis Rd Research Triangle Park, NC 27709, USA 1 [email protected] Abstract — 2.5 and 5 Watt average power 15 and 30 Watt peak	Original	5030-TB Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications CGH55030 CGH55030-TB Tower Mounted Amplifiers GaN Bias 25 watt cgh55015 CGH55015-TB RO4350 rogers MICROWAVE TRANSISTOR	PDF
AMMC-6345 Abstract: AMMC-6430 Text: Agilent AMMC-6430 25 – 33 GHz Power Amplifier Data Sheet Features • Wide frequency range: 25 - 33 GHz • High gain: 17 dB • Power: @30 GHz, P-1dB=29 dBm Description The AMMC-6430 MMIC is a broadband nearly 1W power amplifier designed for use in transmitters that operate in	Original	AMMC-6430 AMMC-6430 25GHz 33GHz. 37dBm. 30GHz 29dBm 5989-1702EN AMMC-6345	PDF
AMMC-6345 Abstract: AMMC-6430 Text: AMMC - 6430 25 - 33 GHz Power Amplifier Data Sheet Chip Size: 2500 x 1750 µm 100 x 69 mils Chip Size Tolerance: ± 10µm (±0.4 mils) Chip Thickness: 100 ± 10µm (4 ± 0.4 mils) Pad Dimensions: 100 x 100 µm (4 ± 0.4 mils) Description Features The AMMC-6430 MMIC is a broadband nearly 1W power	Original	AMMC-6430 25GHz 33GHz. 37dBm. 30GHz 29dBm AMMC-6430-W10 AMMC-6430-W50 AMMC-6345	PDF
Untitled Abstract: No abstract text available Text: AMMC - 6430 25 - 33 GHz Power Amplifier Data Sheet Chip Size: 2500 x 1750 µm 100 x 69 mils Chip Size Tolerance: ± 10µm (±0.4 mils) Chip Thickness: 100 ± 10µm (4 ± 0.4 mils) Pad Dimensions: 100 x 100 µm (4 ± 0.4 mils) Description Features The AMMC-6430 MMIC is a broadband nearly 1W power	Original	AMMC-6430 25GHz 33GHz. 37dBm. 30GHz 29dBm AMMC-6430-W10 AMMC-6430-W50	PDF

15 GHZ POWER AMPLIFIER OUTPUT POWER 37DBM Search Results

15 GHZ POWER AMPLIFIER OUTPUT POWER 37DBM Result Highlights (5)

15 GHZ POWER AMPLIFIER OUTPUT POWER 37DBM Datasheets Context Search

Untitled

FMM5826X

CGB8002-SC

Bookham

"p1db 37dbm"

VP610

2068d

ImS21

mmics

2068D

Untitled

Untitled

Untitled

Untitled

diode p1000

B1001

B1000

B1000

XB1001

TA081-083-30-37

Design of GaN HEMT Transistor Based Amplifiers for 5 - 6 GHz WiMAX Applications

AMMC-6345

AMMC-6345

Untitled