PMD20K200
Abstract: 1N4435 20K150 20K120 20K200
Text: A LAMBDA SWITCHING POWER DARLINGTONS PMD 20K SERIES 150 WATT 14 AMP CONTINUOUS, 20 AMP PEAK ABSOLUTE MAXIMUM RATINGS PA RA M ET ER FEATURES • Electrical specifications guaranteed for operating junction temperature range of 0 - 150°C • Guaranteed and 100% tested for lSB
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80 amp 30v npn darlington
Abstract: No abstract text available
Text: SENTECH CORP 5Ö E D • fllB’ilB'i D O D B E T S Süß 150 WATT 9 AMP CONTINUOUS, 12 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAM ETER FEATURES • Electrical specifications guaranteed for operating junction temperature range of 0 - 150°C • Guaranteed and 100% tested for lSB
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25K120
25K150
25K200
DD32c
80 amp 30v npn darlington
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ADA4850-1
Abstract: ADA4850-2 MO-220-VEED-2 Differential Video Amplifier
Text: High Speed, Rail-to-Rail Output, Op Amp with Ultralow Power-Down ADA4850-1/ADA4850-2 PIN CONFIGURATIONS Ultralow power-down current: 150 nA/amp max Low quiescent current: 2.4 mA/amp High speed 175 MHz −3 dB bandwidth 220 V/µs slew rate 85 ns settling time to 0.1%
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ADA4850-1/ADA4850-2
ADA4850-1
ADA4850-2
16-Lead
CP-16-3
ADA4850-1
ADA4850-2
MO-220-VEED-2
Differential Video Amplifier
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2N6059
Abstract: 2N6051 2N6058 2N60S2 2N6052 DARLINGTON 3A 100V npn
Text: A LAMBDA COMPLEMENTARY POWER DARLINGTONS 2N6051, 2N6052, 2N6058,2N6059 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK ‘ MAXIMUM RATINGS PA RA M ET ER Collector Emitter Voltage 2N6051, 2N6058 2N6052, 2N6059 Collector Base Voltage 2N 6 05 1, 2N6058 2N6052, 2N6059
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2N6051,
2N6052,
2N6058
2N6059
2N6058,
2N6059
2N6052
2N6059)
2N6051
2N60S2
DARLINGTON 3A 100V npn
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PM 3000
Abstract: PM26K380 PM-26K-380 PM29K380 PM-29K-380 380 transistor pmd26k PM26K
Text: % • Fast power switching at 150°C junction temperature PM-26K, PM-29K Switching transistors • -65°C to +150°C operating • Designed to switch 3 or 5 Amp at 20 KHz • 1-5 /jSec maximum turn off time • V0EQ 380V Vq b o 450V • Guaranteed secondary breakdown
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PM-26K,
PM-29K
PM-26K-380
PM-29K-380
PM26K380
PM29K380
VCBo450V
PM-26K
PM-29K
PM 3000
PM26K380
PM29K380
380 transistor
pmd26k
PM26K
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pmd10K80
Abstract: 10 amp npn darlington power transistors PMD10K 5 amp npn darlington power transistors PMD10K100 PMD11K100 PMD11K80 10 amp npn darlington power transistors with low saturation voltage PMD-10K
Text: A LAMBDA COMPLEMENTARY POWER DARL1NGTONS PM D 10K , 11K SERIES 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAMETER FEATURES • Electrical specifications guaranteed for operating junction temperature range of 0 - 200°C • Guaranteed and 100% tested for lSB
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PMD10K,
pmd10K80
10 amp npn darlington power transistors
PMD10K
5 amp npn darlington power transistors
PMD10K100
PMD11K100
PMD11K80
10 amp npn darlington power transistors with low saturation voltage
PMD-10K
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25K120
Abstract: 80 amp 30v npn darlington OA 70 25K200 pmd25k120 PMD25K200
Text: A LAMBDA SWITCHING POWER DARLINGTONS PMD 25K SERIES 150 WATT 9 AMP CONTINUOUS, 12 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAMETER Collector Emitter Voltage P M D 25K120 P M D 25K150 PM D 25K200 FEATURES • Electrical specifications guaranteed for operating junction temperature range of
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MMST8098
Abstract: MMST5088 marking RAV marking GAA
Text: Transistors/"Surface Mounting Type • SST3 Package/NPN Type Application Pre Amp Low Noise Amp Part No. BVceo V lc (mA) @|c & VCE f r (MHz) Cob (pF; Marking BC817-25 45 800 160 400 100 m A /1 V 150 6 G6B D15 BSR14 40 800 100 300 1 50m A /10V 300 8 GU8 D15
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BC817-25
BSR14
BC847A
BC847B
BC847C
BC848A
BC848B
BC848C
BCW31
BCW32
MMST8098
MMST5088
marking RAV
marking GAA
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pmd20k200
Abstract: diode OA-70 20K150
Text: SEflTECH CORP 56E D • fiia H B I 000320b 204 150 WATT 14 AMP CONTINUOUS, 20 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAM ETER SYM BO L Collector Emitter Voltage PMD 20K120 PMD 20K150 PMD 20K200 Collector Base Voltage PMD 20K120 PMD 20K150 PMD 20K200 FEATURES
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000320b
20K120
20K150
20K200
pmd20k200
diode OA-70
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80 amp 80v npn darlington
Abstract: 10 amp npn darlington power transistors with low saturation voltage
Text: SEMTECH CORP S ñE D • Û I B T I B 11! 00032Sti 577 150 WATT 12 AMP CONTINUOUS, 20 AMP PEAK ABSOLUTE MAXIMUM RATINGS PARAM ETER SYM BO L Collector Emitter Voltage PMD10K, 11K80 PMD10K, 11K100 V ceO Collector Base Voltage PMD10K, 11K80 PMD10K, 11K100 V c 80
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00032Sti
PMD10K,
11K80
11K100
DGD32tjO
80 amp 80v npn darlington
10 amp npn darlington power transistors with low saturation voltage
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2N1202
Abstract: 539A 5392n 2n1203 2N1501 SO45 2N2266 5402N Germanium power 2N539A
Text: germanium power transistors 143 PNP ALLOY TRANSISTORS 3.5-5 Amp NORMALIZED CURRENT GAIN 200 - ,- . . 175 .!. ~ w ~ 150 ~ z. ;( 125 C) ~ Z ~ 100 GI: ~ - VCEo-2V ~ u 75 50 o -Q5 -1.0 -1.5 -. -3.0 -2.5 -2.0 COLLECTOR CURRENT, IC (AMPS)
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MIL-S-19500/3SB
MIL-S-19500/3SB
8-32NC-2A
2N1202
539A
5392n
2n1203
2N1501
SO45
2N2266
5402N
Germanium power
2N539A
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2N1552
Abstract: Germanium power 2N1559a 2N1560 2N1555
Text: germanium. power transistors 150 T03/ See Pg. 147 for outline d PNP ALLOY TRANSISTORS 10.0 Amp BREAKDOWN VOLTAGES TYPE NUMBER V eB 2N677 2N677A 2N677B 2N677C 2N678 2N678A 2N678B 2N678C 2N1031 2N1031A 2N1031B 2N1031C 2N1032 2N1032A 2N1032B 2N1032C 2N1120
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2N677
2N677A
2N677B
2N677C
2N678
2N678A
2N678B
2N678C
2N1031
2N1031A
2N1552
Germanium power
2N1559a
2N1560
2N1555
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ZTX654
Abstract: ZTX655 DSA003771
Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX654 ZTX655 ISSUE 2 JULY 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt TYPICAL CHARACTERISTICS 0.18 hFE - Normalised Gain % VCE(sat) - (Volts) 100 IC/IB=10
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ZTX654
ZTX655
500mA,
200mA*
20MHz
ZTX654
ZTX655
DSA003771
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2N6354
Abstract: 2NG354 2N6496 2ng3 150V15
Text: 2N6354 2 N6496 POWER TRANSISTORS 20 Amp, 150 V, Double Diffused NPN Mesa FEATURES DESCRIPTION • • • • These double diffused glass passivated mesa power transistors combine fastswitching, low saturation voltage and rugged Es/b capability. They are de
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2N6354
N6496
500ns
2N6496
2NG354
2N6496
2ng3
150V15
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2N3771 power circuit
Abstract: 2N3771 MBD5300 MSD6100
Text: HIGH POWER 2N3771 NPN POWER TRANSISTORS 40 VOLTS 30 AMP, 150 WATTS These high power NPN power transistors are designed for linear amplifiers, series pass regulators, and inductive switch ing applications. Features: • Forward biased second breakdown current capability
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2N3771
T0-204AA
2N3771 power circuit
2N3771
MBD5300
MSD6100
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bsw68a
Abstract: BSW67A MOTOROLA
Text: MOTOROLA SC XSTRS/R F 15E D | t-3b72S4 G GflbM n 3 | T -ie -if BSW67A BSW68A MAXIMUM RATINGS Symbol BSW67A BSW68A Unit VCEO 120 150 Vdc Collector-Base Voltage VCBO 120 150 Vdc Emitter-Base Voltage Vebo 6.0 Vdc Collector Current — Continuous ic 2.0 Amp Total Device Dissipation @ Ta “ 25°C
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t-3b72S4
BSW67A
BSW68A
BSW68A
BSW67A MOTOROLA
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ZTX654
Abstract: No abstract text available
Text: ZTX654 Not Recommended for New Design Please Use ZTX655 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX654 ZTX655 ISSUE 2 JULY 94 FEATURES * 150 Volt VCEO * 1 Amp continuous current * Low saturation voltage * Ptot= 1 Watt TYPICAL CHARACTERISTICS 0.18 hFE - Normalised Gain %
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ZTX654
ZTX655
ZTX655
IC/10
100ms
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH 94 FEATURES * 150 Volt VCE0 * 1 Amp continuous current * Ptot= 1 Watt ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX554 ZTX555 UNIT Collector-Base Voltage V CBO -140 -160 V C ollector-Em itter Voltage
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ZTX554
ZTX555
-120V
-140V
-100mA,
-10mA*
ZTX555
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Untitled
Abstract: No abstract text available
Text: PNP SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH 94 FEATURES * 150 Volt V,CEO 1 Amp continuous current P,o,= 1 Watt E-Line TQ92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO C ollector-Em itter Voltage ZTX555
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ZTX554
ZTX555
001G35S
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mbd5300
Abstract: mbd-5300 2N6487 MSD6100
Text: 2N6487 NPH POWER TRANSISTORS 60 VOLTS 15 AMP, 75 WATTS These are designed for use in general-purpose amplifier and switching applications. NPN COLLECTOR Features: • DC Current Gain specified to 15 Amperes hFE = 20-150 @ IQ = 5.0 A = 5.0 Min @ lc = 15 A
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2N6487
O-22QAB
T0-220-AB
2N6487
mbd5300
mbd-5300
MSD6100
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LTVW
Abstract: BPW21 application note BPW21 SFH213FA Amplifier c4 F3141 si quad PHOTodiode G02A LT1880 Q581
Text: LT1880 SOT-23, Rail-to-Rail Output, Picoamp Input Current Precision Op Amp U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO The LT 1880 op amp brings high accuracy input performance and rail-to-rail output swing to the SOT-23 package. Input offset voltage is trimmed to less than 150µV and
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LT1880
OT-23,
OT-23
900pA
13nV/Hz
MMBT3904
SFH213FA
100kHz,
LT1782
LTVW
BPW21 application note
BPW21
Amplifier c4
F3141
si quad PHOTodiode
G02A
LT1880
Q581
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Untitled
Abstract: No abstract text available
Text: LT1880 SOT-23, Rail-to-Rail Output, Picoamp Input Current Precision Op Amp DESCRIPTION FEATURES n n n n n n n n n n n The LT 1880 op amp brings high accuracy input performance and rail-to-rail output swing to the SOT-23 package. Input offset voltage is trimmed to less than 150 V and
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LT1880
OT-23,
OT-23
900pA
900pA
13nV/â
100kHz,
LT1782
LT1792
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LTVW
Abstract: bpw21 op BPW21 resistor parasitic capacitance LT1880 LTVW MARKING siemens thermocouple 2N5486 LT1806 LT1880CS5
Text: Final Electrical Specifications LT1880 SOT-23, Rail-to-Rail Output, Picoamp Input Current Precision Op Amp U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 1880 op amp brings high accuracy input performance and rail-to-rail output swing to the SOT-23 package. Input offset voltage is trimmed to less than 150µV and
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LT1880
OT-23,
OT-23
900pA
LT1782
LT1792
LT1881/LT1882
200pA
LTVW
bpw21 op
BPW21
resistor parasitic capacitance
LT1880
LTVW MARKING
siemens thermocouple
2N5486
LT1806
LT1880CS5
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MTM20N08
Abstract: MTP2P45 MTM35N05 IRF123 IRF150 MTM10N08 MTM12N08 MTM12P08 MTM25N08 MTM55N08
Text: POWER TRANSISTORS — TMOS METAL continued Metal TMOS Power MOSFETs — TO-204AA (continued) CASE 1-04 and CASE 1-05 rDS(on) @ ID VBR(DSS) (Volts) Min (Ohms) Max (Amp) 100 0.055 20 0.04 27.5 0.5 4 80 Device 0.4 40 150 55 250 MTM8N08 8 75 0.33 5 MTM10N08
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O-204AA
IRF150*
MTM55N10
MTM8N08
MTM8P08*
MTM10N08
MTM12P08*
MTM12N08
MTM20N08
MTM25N08Â
MTP2P45
MTM35N05
IRF123
IRF150
MTM12N08
MTM12P08
MTM25N08
MTM55N08
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