AN7254
Abstract: AN7260 RFL1N12L RFL1N15L
Text: [ /Title RFL1N 12L, RFL1N1 5L /Subject (1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, Logic Level, N-Channel Power MOSFETs, TO205AF) RFL1N12L, RFL1N15L Semiconductor 1A, 120V and 150V, 1.900 Ohm,
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O205AF)
RFL1N12L,
RFL1N15L
RFL1N12L
O-205AF
AN7254
AN7260.
AN7260
RFL1N12L
RFL1N15L
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FDB2570
Abstract: FDP2570
Text: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and
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FDP2570/FDB2570
FDB2570
FDP2570
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CBVK741B019
Abstract: EO70 F63TNR FDB2570 FDP2570 FDP7060 NDP4060L D2Pak Package dimensions
Text: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and
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FDP2570/FDB2570
CBVK741B019
EO70
F63TNR
FDB2570
FDP2570
FDP7060
NDP4060L
D2Pak Package dimensions
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2539a
Abstract: No abstract text available
Text: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and
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FDP2570/FDB2570
2539a
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FDP79N15
Abstract: FDPF79N15
Text: UniFET TM FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 79A, 150V, RDS on = 0.03Ω @VGS = 10 V
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FDP79N15
FDPF79N15
O-220
FDPF79N15
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marking 66a
Abstract: FDB66N15
Text: UniFET TM FDB66N15 150V N-Channel MOSFET Features Description • 66A, 150V, RDS on = 0.036Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)
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FDB66N15
marking 66a
FDB66N15
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FDPF79N15
Abstract: FDP79N15
Text: UniFET TM FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 79A, 150V, RDS on = 0.03Ω @VGS = 10 V
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FDP79N15
FDPF79N15
O-220
FDPF79N15
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FDA79N15
Abstract: No abstract text available
Text: TM FDA79N15 150V N-Channel MOSFET Features Description • 79A, 150V, RDS on = 0.03Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 56 nC)
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FDA79N15
FDA79N15
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79a diode
Abstract: 150V n-channel MOSFET D 3410 A FDA79N15
Text: TM FDA79N15 150V N-Channel MOSFET Features Description • 79A, 150V, RDS on = 0.03Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 56 nC)
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FDA79N15
79a diode
150V n-channel MOSFET
D 3410 A
FDA79N15
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Untitled
Abstract: No abstract text available
Text: UniFET TM FDB66N15 150V N-Channel MOSFET Features Description • 66A, 150V, RDS on = 0.036Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)
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FDB66N15
FDB66N15
FDB66N15TM
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IRF232
Abstract: IRF230 IRF231 IRF233 TB334
Text: IRF230, IRF231, IRF232, IRF233 Semiconductor 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF230,
IRF231,
IRF232,
IRF233
IRF232
IRF230
IRF231
IRF233
TB334
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IRF220
Abstract: IRF223 irf2210 IRF221 IRF222 TB334 MOSFET IRF220
Text: IRF220, IRF221, IRF222, IRF223 Semiconductor 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 4.0A and 5.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power
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IRF220,
IRF221,
IRF222,
IRF223
IRF220
IRF223
irf2210
IRF221
IRF222
TB334
MOSFET IRF220
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IRF640 applications note
Abstract: IRF640 irf6401 IRF641 IRF643 harris IRF642 RF1S640SM9A IRF643 RF1S640SM TB334
Text: IRF640, IRF641, IRF642, IRF643, RF1S640, RF1S640SM S E M I C O N D U C T O R 16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 16A and 18A, 150V and 200V These are N-Channel enhancement mode silicon gate
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IRF640,
IRF641,
IRF642,
IRF643,
RF1S640,
RF1S640SM
IRF640 applications note
IRF640
irf6401
IRF641
IRF643 harris
IRF642
RF1S640SM9A
IRF643
RF1S640SM
TB334
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IRF640 applications note
Abstract: IRF640 IRF642 IRF643 harris IRF640 circuit TA17422 IRF643 RF1S640SM9A for irf640 irf641
Text: IRF640, IRF641, IRF642, SEMICONDUCTOR IRF643, RF1S640, RF1S640SM IHARRIS 16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 16A and 18A, 150V and 200V These are N-Channel enhancement mode silicon gate
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IRF640,
IRF641,
IRF642,
IRF643,
RF1S640,
RF1S640SM
RF642,
IRF640 applications note
IRF640
IRF642
IRF643 harris
IRF640 circuit
TA17422
IRF643
RF1S640SM9A
for irf640
irf641
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Untitled
Abstract: No abstract text available
Text: y *“ * RFL1N12, RFL1N15 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Description Features 1A, 120V and 150V Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such
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OCR Scan
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RFL1N12,
RFL1N15
TA09196.
AN7254
AN7260.
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Untitled
Abstract: No abstract text available
Text: IRF230, IRF231, IRF232, IRF233 Semiconductor 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate
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IRF230,
IRF231,
IRF232,
IRF233
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Untitled
Abstract: No abstract text available
Text: W vys s' RFP2N12, RFP2N15 Semiconductor 7 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 2A, 120V and 150V These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such
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RFP2N12,
RFP2N15
TA09196.
RFP2N12
TB334
AN7254
AN7260
RFP2N15
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ta9192
Abstract: No abstract text available
Text: W vys S RFL4N12, RFL4N15 Semiconductor y 4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 4A, 120V and 150V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such
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RFL4N12,
RFL4N15
TA9192.
AN7254
AN7260.
ta9192
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Untitled
Abstract: No abstract text available
Text: P *3 3 S IRFR220, IRFR221, IRFR222, IRFU220, IRFU221, IRFU222 3.8A and 4.6A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.8A and 4.6A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate
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IRFR220,
IRFR221,
IRFR222,
IRFU220,
IRFU221,
IRFU222
RFR220,
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ifr220
Abstract: IFU220 IRFU221 IRFU222 ifu221 IRFR222 IFR221 ta96 IRFR220 irfu220
Text: IRFR220, IRFR221, IRFR222, IRFU220, IR FU221, IRFU222 H A R R IS SEMICONDUCTOR 3.8A and 4.6A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.8A and 4.6A, 150V and 200V These are N-Channel enhancement mode silicon gate
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IRFR220,
IRFR221,
IRFR222,
IRFU220,
FU221,
IRFU222
RFR220,
RFR221,
RFR222,
ifr220
IFU220
IRFU221
IRFU222
ifu221
IRFR222
IFR221
ta96
IRFR220
irfu220
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Untitled
Abstract: No abstract text available
Text: if* ? S IRF250, IRF251, IRF252, IRF253 Semiconductor y y 25A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 25A and 30A, 150V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate
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IRF250,
IRF251,
IRF252,
IRF253
RF251,
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TB334
Abstract: RFP10N12 AN7254 RFM10N12 RFM10N15 RFP10N15 TB-334
Text: R M S RFM10N12, RFM10N15, RFP10N12, RFP10N15 Semiconductor October 1998 Data Sheet File Number 1445.2 Features 10A, 120V and 150V, 0.300 Ohm, N-Channel Power MOSFETs • 10A, 120V and 150V These are N-channel enhancement-mode silicon-gate power field effect transistors designed for applications such
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RFM10N12,
RFM10N15,
RFP10N12,
RFP10N15
TA09192.
RFM10N12
T0-204AA
RFM10N12
RFM10N15
TB334
RFP10N12
AN7254
RFP10N15
TB-334
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Untitled
Abstract: No abstract text available
Text: tyvvys S IRFP240, IRFP241, IRFP242, IRFP243 Semiconductor y y 18A and 20A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 18A and 20A, 200V and 150V • High Input Impedance These are N-Channel enhancement mode silicon gate
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IRFP240,
IRFP241,
IRFP242,
IRFP243
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TA17442
Abstract: TA-1744
Text: IRFF210, IRFF211, IRFF212, IRFF213 HARRIS S E M I C O N D U C T O R A.BA, January 1998 and 2.2A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs Features Description • 1 .8A and 2.2A, 150V to 200V These are N-Channel enhancement mode silicon gate
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IRFF210,
IRFF211,
IRFF212,
IRFF213
TB334
RFF210,
RFF211,
RFF212,
IRFF213
TA17442
TA-1744
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