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    150V N-CHANNEL MOSFET Search Results

    150V N-CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    150V N-CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN7254

    Abstract: AN7260 RFL1N12L RFL1N15L
    Text: [ /Title RFL1N 12L, RFL1N1 5L /Subject (1A, 120V and 150V, 1.900 Ohm, Logic Level, N-Channel Power MOSFETs) /Author () /Keywords (Harris Semiconductor, Logic Level, N-Channel Power MOSFETs, TO205AF) RFL1N12L, RFL1N15L Semiconductor 1A, 120V and 150V, 1.900 Ohm,


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    PDF O205AF) RFL1N12L, RFL1N15L RFL1N12L O-205AF AN7254 AN7260. AN7260 RFL1N12L RFL1N15L

    FDB2570

    Abstract: FDP2570
    Text: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and


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    PDF FDP2570/FDB2570 FDB2570 FDP2570

    CBVK741B019

    Abstract: EO70 F63TNR FDB2570 FDP2570 FDP7060 NDP4060L D2Pak Package dimensions
    Text: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and


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    PDF FDP2570/FDB2570 CBVK741B019 EO70 F63TNR FDB2570 FDP2570 FDP7060 NDP4060L D2Pak Package dimensions

    2539a

    Abstract: No abstract text available
    Text: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and


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    PDF FDP2570/FDB2570 2539a

    FDP79N15

    Abstract: FDPF79N15
    Text: UniFET TM FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 79A, 150V, RDS on = 0.03Ω @VGS = 10 V


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    PDF FDP79N15 FDPF79N15 O-220 FDPF79N15

    marking 66a

    Abstract: FDB66N15
    Text: UniFET TM FDB66N15 150V N-Channel MOSFET Features Description • 66A, 150V, RDS on = 0.036Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)


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    PDF FDB66N15 marking 66a FDB66N15

    FDPF79N15

    Abstract: FDP79N15
    Text: UniFET TM FDP79N15 / FDPF79N15 150V N-Channel MOSFET Features Description • • • • • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. 79A, 150V, RDS on = 0.03Ω @VGS = 10 V


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    PDF FDP79N15 FDPF79N15 O-220 FDPF79N15

    FDA79N15

    Abstract: No abstract text available
    Text: TM FDA79N15 150V N-Channel MOSFET Features Description • 79A, 150V, RDS on = 0.03Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 56 nC)


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    PDF FDA79N15 FDA79N15

    79a diode

    Abstract: 150V n-channel MOSFET D 3410 A FDA79N15
    Text: TM FDA79N15 150V N-Channel MOSFET Features Description • 79A, 150V, RDS on = 0.03Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 56 nC)


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    PDF FDA79N15 79a diode 150V n-channel MOSFET D 3410 A FDA79N15

    Untitled

    Abstract: No abstract text available
    Text: UniFET TM FDB66N15 150V N-Channel MOSFET Features Description • 66A, 150V, RDS on = 0.036Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 49 nC)


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    PDF FDB66N15 FDB66N15 FDB66N15TM

    IRF232

    Abstract: IRF230 IRF231 IRF233 TB334
    Text: IRF230, IRF231, IRF232, IRF233 Semiconductor 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


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    PDF IRF230, IRF231, IRF232, IRF233 IRF232 IRF230 IRF231 IRF233 TB334

    IRF220

    Abstract: IRF223 irf2210 IRF221 IRF222 TB334 MOSFET IRF220
    Text: IRF220, IRF221, IRF222, IRF223 Semiconductor 4.0A and 5.0A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 4.0A and 5.0A, 150V and 200V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power


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    PDF IRF220, IRF221, IRF222, IRF223 IRF220 IRF223 irf2210 IRF221 IRF222 TB334 MOSFET IRF220

    IRF640 applications note

    Abstract: IRF640 irf6401 IRF641 IRF643 harris IRF642 RF1S640SM9A IRF643 RF1S640SM TB334
    Text: IRF640, IRF641, IRF642, IRF643, RF1S640, RF1S640SM S E M I C O N D U C T O R 16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 16A and 18A, 150V and 200V These are N-Channel enhancement mode silicon gate


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    PDF IRF640, IRF641, IRF642, IRF643, RF1S640, RF1S640SM IRF640 applications note IRF640 irf6401 IRF641 IRF643 harris IRF642 RF1S640SM9A IRF643 RF1S640SM TB334

    IRF640 applications note

    Abstract: IRF640 IRF642 IRF643 harris IRF640 circuit TA17422 IRF643 RF1S640SM9A for irf640 irf641
    Text: IRF640, IRF641, IRF642, SEMICONDUCTOR IRF643, RF1S640, RF1S640SM IHARRIS 16A and 18A, 150V and 200V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 16A and 18A, 150V and 200V These are N-Channel enhancement mode silicon gate


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    PDF IRF640, IRF641, IRF642, IRF643, RF1S640, RF1S640SM RF642, IRF640 applications note IRF640 IRF642 IRF643 harris IRF640 circuit TA17422 IRF643 RF1S640SM9A for irf640 irf641

    Untitled

    Abstract: No abstract text available
    Text: y *“ * RFL1N12, RFL1N15 1A, 120V and 150V, 1.9 Ohm, N-Channel Power MOSFETs January 1998 Description Features 1A, 120V and 150V Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


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    PDF RFL1N12, RFL1N15 TA09196. AN7254 AN7260.

    Untitled

    Abstract: No abstract text available
    Text: IRF230, IRF231, IRF232, IRF233 Semiconductor 8.0A and 9.0A, 150V and 200V, 0.4 and 0.6 Ohm, N-Channel Power MOSFETs October 1997 Features Description • 8.0A and 9.0A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate


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    PDF IRF230, IRF231, IRF232, IRF233

    Untitled

    Abstract: No abstract text available
    Text: W vys s' RFP2N12, RFP2N15 Semiconductor 7 2A, 120V and 150V, 1.750 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 2A, 120V and 150V These are N-Channel enhancem ent mode silicon gate power field effect transistors designed for applications such


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    PDF RFP2N12, RFP2N15 TA09196. RFP2N12 TB334 AN7254 AN7260 RFP2N15

    ta9192

    Abstract: No abstract text available
    Text: W vys S RFL4N12, RFL4N15 Semiconductor y 4A, 120V and 150V, 0.400 Ohm, N-Channel Power MOSFETs September 1998 Features Description • 4A, 120V and 150V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such


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    PDF RFL4N12, RFL4N15 TA9192. AN7254 AN7260. ta9192

    Untitled

    Abstract: No abstract text available
    Text: P *3 3 S IRFR220, IRFR221, IRFR222, IRFU220, IRFU221, IRFU222 3.8A and 4.6A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.8A and 4.6A, 150V and 200V • High Input Impedance These are N-Channel enhancement mode silicon gate


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    PDF IRFR220, IRFR221, IRFR222, IRFU220, IRFU221, IRFU222 RFR220,

    ifr220

    Abstract: IFU220 IRFU221 IRFU222 ifu221 IRFR222 IFR221 ta96 IRFR220 irfu220
    Text: IRFR220, IRFR221, IRFR222, IRFU220, IR FU221, IRFU222 H A R R IS SEMICONDUCTOR 3.8A and 4.6A, 150V and 200V, 0.8 and 1.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 3.8A and 4.6A, 150V and 200V These are N-Channel enhancement mode silicon gate


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    PDF IRFR220, IRFR221, IRFR222, IRFU220, FU221, IRFU222 RFR220, RFR221, RFR222, ifr220 IFU220 IRFU221 IRFU222 ifu221 IRFR222 IFR221 ta96 IRFR220 irfu220

    Untitled

    Abstract: No abstract text available
    Text: if* ? S IRF250, IRF251, IRF252, IRF253 Semiconductor y y 25A and 30A, 150V and 200V, 0.085 and 0.120 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 25A and 30A, 150V and 200V • Linear Transfer Characteristics These are N-Channel enhancement mode silicon gate


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    PDF IRF250, IRF251, IRF252, IRF253 RF251,

    TB334

    Abstract: RFP10N12 AN7254 RFM10N12 RFM10N15 RFP10N15 TB-334
    Text: R M S RFM10N12, RFM10N15, RFP10N12, RFP10N15 Semiconductor October 1998 Data Sheet File Number 1445.2 Features 10A, 120V and 150V, 0.300 Ohm, N-Channel Power MOSFETs • 10A, 120V and 150V These are N-channel enhancement-mode silicon-gate power field effect transistors designed for applications such


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    PDF RFM10N12, RFM10N15, RFP10N12, RFP10N15 TA09192. RFM10N12 T0-204AA RFM10N12 RFM10N15 TB334 RFP10N12 AN7254 RFP10N15 TB-334

    Untitled

    Abstract: No abstract text available
    Text: tyvvys S IRFP240, IRFP241, IRFP242, IRFP243 Semiconductor y y 18A and 20A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 18A and 20A, 200V and 150V • High Input Impedance These are N-Channel enhancement mode silicon gate


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    PDF IRFP240, IRFP241, IRFP242, IRFP243

    TA17442

    Abstract: TA-1744
    Text: IRFF210, IRFF211, IRFF212, IRFF213 HARRIS S E M I C O N D U C T O R A.BA, January 1998 and 2.2A, 150V and 200V, 1.5 and 2.4 Ohm, N-Channel Power MOSFETs Features Description • 1 .8A and 2.2A, 150V to 200V These are N-Channel enhancement mode silicon gate


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    PDF IRFF210, IRFF211, IRFF212, IRFF213 TB334 RFF210, RFF211, RFF212, IRFF213 TA17442 TA-1744