r58 ah16
Abstract: ISL62883HRZ ISL62883C fairchild sot23 v31 Burndy y35 r39 ah16 TP35 1557 b transistor rPGA-989 ISL6208
Text: Application Note 1557 Author: Jia Wei ISL62883CEVAL2Z User Guide Introduction Interface Connections The ISL62883CEVAL2Z evaluation board demonstrates the performance of the ISL62883 multiphase synchronous-buck PWM VCORE controller implementing Intel IMVP-6.5 protocol. The ISL62883 features Intersil's
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ISL62883CEVAL2Z
ISL62883
AN1557
r58 ah16
ISL62883HRZ
ISL62883C
fairchild sot23 v31
Burndy y35
r39 ah16
TP35
1557 b transistor
rPGA-989
ISL6208
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PDF
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EL2018CN
Abstract: metal detector plans metal detector plans schematic EL2018 EL2018CH EL2018CJ MIL-I-45208A R2KN
Text: ELANTEC INC Ifl D E | 312=1557 □□□□574 7 HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS Fast, High Voltage Comparator with Transparent latch Features General Description • Fast response tim e -2 0 ns • Wide input differential voltage range —24 V on ± 15 V
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EL2018/EL2018C
time-20
Hz-20
EL2018
EL2018CN
metal detector plans
metal detector plans schematic
EL2018CH
EL2018CJ
MIL-I-45208A
R2KN
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PDF
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metal detector plans
Abstract: metal detector plans schematic el2019h/883b EL2019CH EL2019CN EL2019H flipflop application TI5C
Text: E L A N T E C INC ìfl"" Ì>E| 315=1557 GDOOSflM □ HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS Fast, High Voltage Comparator with Master Slave Flip-Flop F e a tu re s G eneral D escription • Comparator cannot oscillate • Fast response - 5 ns data to
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EL2019/EL2019C
30/iV)
EL2019
3121S57
fj-73-Si
metal detector plans
metal detector plans schematic
el2019h/883b
EL2019CH
EL2019CN
EL2019H
flipflop application
TI5C
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Untitled
Abstract: No abstract text available
Text: 19-1557; Rev 0; 10/99 +2.7V to +5.5V, Low-Power, Quad, Parallel 8-Bit DAC with Rail-to-Rail Voltage Outputs The MAX5100 provides double-buffered logic inputs: four 8-bit buffer registers followed by four 8-bit DAC registers. This keeps the DAC outputs from changing
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MAX5100
20-pin
MAX5100
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Untitled
Abstract: No abstract text available
Text: 19-1557; Rev 0; 10/99 +2.7V to +5.5V, Low-Power, Quad, Parallel 8-Bit DAC with Rail-to-Rail Voltage Outputs Features ♦ +2.7V to +5.5V Single-Supply Operation The MAX5100 provides double-buffered logic inputs: four 8-bit buffer registers followed by four 8-bit DAC
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MAX5100
20-Pin
MAX5100
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Untitled
Abstract: No abstract text available
Text: EN2016D 312=1557 OOQllGa M SÔE D ELANTEC INC EN20J6D Die Fast QuadNPN Array A b s o lu te M a xim u m R a tin g s w T~</3 -as t a = 25°c> Pd Power Dissipation Each Transistor 500 mW (T^ = 25°C Ta Operating Temperature Range —55°Cto+125°C Ts Storage Temperature
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EN20J6D
500mW
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PDF
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zener 4b7
Abstract: No abstract text available
Text: EL2041/EL2041C SflE D • 312=1557 □□□2110 fill H E L A ELANTEC INC F eatu res G eneral D escrip tion • Open loop unity bandwidth—90 MHz • Unity gain stable • High gain—10k typ. • High slew rate—250 V/ju.s • Low offset voltage—0.5 mV typ.,
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EL2041/EL2041C
MIL-STD-883
HA2541
EL2041CG
864E-18
312SS57
00DS122
EL2041/EL2041C
EL2041
zener 4b7
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PDF
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74LS138C
Abstract: metal detector plans schematic metal detector diagram PI metal detector plans q815 EL2018CH EL2018CJ EL2018CN EL2018H 0DD25
Text: 312*1557 0DD25D7 ^SD MIELA SÖE D ia n t e c EL2018/EL2018 C Fast, High Voltage Comparator with Transparent Latch HIGH PERFORMANCE ANALOG INTEGR/TEC CIRCUITS •■ ELANTEC INC F eatu res G eneral D escrip tion • F ast response time—20 ns • Wide input differential voltage
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312TSS7
0DD25D7
EL2018/EL2018C
EL2018/EL2018C
EL2018
74LS138C
metal detector plans schematic
metal detector diagram PI
metal detector plans
q815
EL2018CH
EL2018CJ
EL2018CN
EL2018H
0DD25
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PDF
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SRF 3775
Abstract: EL2041CG pot 100K smd smd diode JC 7K EL2041CJ EL2041G EL2041J HA2541 zener 4b7
Text: EL2041/EL2041C SflE D • 312=1557 □□□2110 fill H E L A ELANTEC INC F eatu res G eneral D escrip tion • Open loop unity bandwidth—90 MHz • Unity gain stable • High gain—10k typ. • High slew rate—250 V/ju.s • Low offset voltage—0.5 mV typ.,
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EL2041/EL2041C
MIL-STD-883
HA2541
864E-18
312SS57
00DS122
EL2041/EL2041C
EL2041
SRF 3775
EL2041CG
pot 100K smd
smd diode JC 7K
EL2041CJ
EL2041G
EL2041J
HA2541
zener 4b7
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basic circuit diagram of AC servo motor
Abstract: 3 phase AC servo drive schematic TI EL2037CM 3 phase AC servo drive schematic Control AC servo motor EL2037 floppy motor driver IN4000 mos short circuit protection schematic diagram short circuit protection schematic diagram
Text: ELANTEC 4 IE D INC 315=1557 Servo Motor Drivers G0017B3 b ÜELA " T S ¿ -i V 2 S F e a tu r e s G e n e ra l D e sc r ip tio n • No crossover distortion • Low output offset current • Maximum output swing • Short circuit protected • Programmable park voltage
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EL2036C/EL2037C
basic circuit diagram of AC servo motor
3 phase AC servo drive schematic TI
EL2037CM
3 phase AC servo drive schematic
Control AC servo motor
EL2037
floppy motor driver
IN4000
mos short circuit protection schematic diagram
short circuit protection schematic diagram
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PDF
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1557 b transistor
Abstract: transistor IC 1557 b 1557 transistor transistor 1557 b transistor 1557 TRANSISTOR 2SC 2SC1557 C4053 uhf transistor amplifier K8J5
Text: S /U D :/N P N l£ 9 * 5 /? J I/7 b -* fê h 5 > 5 tt9 SILICON NPN EPITAXIAL PLANAR TRANSISTOR 2SC , 1557 i f i i i f f l o -f » b ttxib nmmm INDUSTRIAL APPLICATIONS o VHP , UHF o M icrowave H igh Power A m p lifie r A p p lic a tio n s o VHF, UHF Band CATV A p p l i c a t io n s
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30MHz
2SC1557
1557 b transistor
transistor IC 1557 b
1557 transistor
transistor 1557 b
transistor 1557
TRANSISTOR 2SC
C4053
uhf transistor amplifier
K8J5
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PDF
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EL2070
Abstract: EL2070CN EL2070CS MIL-I-45208A 7710 8 pin dip
Text: SflE D 312=1557 0002147 S03 « E L A HlGH PERfORMAf^CE ANALOG INTEGRATED CIRCUITS EL2070/EL2070C 200 MHz Current Feedback Am plifier ELANTEC INC F e a tu r e s G e n e ra l D e s c rip tio n • 200 M Hz —3 dB bandwidth, The EL2070 is a wide bandwidth, fast settling monolithic am
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DD02147
EL2070/EL207OC
ns/100
conversio30
EL2070/EL2070C
EL2070
EL2070CN
EL2070CS
MIL-I-45208A
7710 8 pin dip
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PDF
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SD1557
Abstract: 2804lSL CB-50 SD1513
Text: SGS-THOMSON TELECOM AND DATA COMMUNICATIONS RÆD [^ ô [i[L[!(g¥(H3(Q)R0[(gS RF & MICROWAVE TRANSISTORS < .400 X .500 2LFL HERM .280 4LSL (A) .400 SQ 2WL FL HERM .250 SQ 2LFL .280 2LFL (A) 960 . 1220 MHz Package Type Config. Vcc CLASS C PULSE FOR DME / IFF / TACAN
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transistor D 1557
Abstract: 1557 b transistor F88 diode transistor IC 1557 B transistor 1557 b AF280 Germanium power
Text: 5SC » • fi235bOS GG04QÔ1 S H S I E â PNP Germanium UHF Transistor - SIEMENS À F 280 S AKTIENGESELLSCHAF “ fo r m ixe r and o sc illa to r c irc u its up to 9 0 0 M H z - 7^ 3/-07 AF 2 8 0 S is a germanium PNP UHF planar transistor with passivated surface in lowcapacitance 50 B 3 DIN 41867 plastic package similar to T 0 119. This transistor Is particularly
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fi235bOS
GG04Q
2701-F88
transistor D 1557
1557 b transistor
F88 diode
transistor IC 1557 B
transistor 1557 b
AF280
Germanium power
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PDF
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2N6547
Abstract: 2N6546
Text: s G S-THOHSON - D7E D | 7 ^ 5 3 7 . : 6 -7 C- 1 5 5- 7 1 D OQlTBia"!] 1" - / S ’- T^- 2N6546 IVIULTIEPITAXIAL MESA NPN H IG H V O L T A G E , H IG H C U R R E N T P O W E R SW IT C H The 2N6546 and 2N6547 are multiepitaxial mesa NPN transistors in Jedec TO-3
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2N6546
2N6546
2N6547
300/is,
F--01
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PDF
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Untitled
Abstract: No abstract text available
Text: 711002b QObTSTfl bS3 • P H I N BSS83 7V MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.
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711002b
BSS83
OT143
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PDF
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transistor d 1557
Abstract: No abstract text available
Text: ^53^31 DDSSblc! bfiS H A P X N AUER PHILIPS/D ISCR ETE BSS83 b?E D J V MOSFET N-CHANNEL ENHANCEMENT SWITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor o f the N-channel enhancement mode type. The transistor is sealed in a SOT143 envelope and features a low ON resistance and low capacitances.
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BSS83
OT143
transistor d 1557
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PDF
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Untitled
Abstract: No abstract text available
Text: ELANTEC la n te c HIGH PERFORMANCE ANAUQGINTEGSMÊO CIRCUITS D • 312TSS7 Dual Fast Single-Supply Decompensated Op Amp 0000054 E ■ "7- "7 T ~ /Q ' F eatu res G eneral D escrip tion • Inputs and outputs operate at negative supply rail • Gain bandw idth
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312TSS7
MIL-STD-883
EL2243
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PDF
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t559
Abstract: No abstract text available
Text: SIEMENS BFP 280 NPN Silicon RF Transistor • For low noise, low-power amplifiers in mobile communication systems pager, cordless telephone at collector currents from 0.2mA to 8mA • fT = 7,5GHz F = 1 .5 d B at 900MHz ESP: Electrostatic discharge sensitive device, observe handling precaution!
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900MHz
Q62702-F1378
OT-143
fl235bG5
53SLDS
t559
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PDF
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Untitled
Abstract: No abstract text available
Text: ELANTEC 3129557 ELANTEC INC Tfl » E j 312TSS7 DDDD5S2 INC fl 98° 00 55 2 D ~}' 7 ^ - / 5 ^ EL2 O04:/EL,20O4C HIGH PERFORMANCE ANALOG INTEGRATED CIRCUITS 350M H z FET Buffer M C O O w oo c F i- Features General Description • • • • • • • The EL2004 is a very high-speed, FET input buffer/line driver de
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312TSS7
EL2004
350MHz.
500V/ys
EL2004/EL2004C
20MHz
EL2004â
EL2004.
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PDF
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transistor d 1557
Abstract: BSS83 BR B6S M74 marking philips bss83 BSS83 M74
Text: • fc,b53em []D25fel2 bßS H A P X N AUER PHILIPS/DISCRETE BSS83 b?E D _ MOSFET N-CHANNEL ENHANCEMENT SW ITCHING TRANSISTOR Symmetrical insulated-gate silicon MOS field-effect transistor of the N-channel enhancement mode type. The transistor is sealed in a SO T143 envelope and features a low ON resistance and low capacitances.
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D25fel2
BSS83
OT143
Z87623
7Z92669
transistor d 1557
BSS83
BR B6S
M74 marking
philips bss83
BSS83 M74
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PDF
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M74 marking
Abstract: BSS83 M74 MARKING J1A 50J2 BSS83 m74 lg
Text: 71 lOfl2b 001^570 bS3 • P H I N B SS8 3 7 V . MOSFET N-CHANNEL ENHANCEMENT S W I T C H IN G TRA N S IS TO R S ym m etrical insulated-gate silicon MOS fie ld -e ffe c t transistor o f the N-channel enhancem ent m ode type. The tran sisto r is sealed in a S O T 143 envelope and features a lo w ON resistance and lo w capacitances.
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BSS83
OT143
7Z87623
711062b
7Z92669.
M74 marking
BSS83 M74
MARKING J1A
50J2
BSS83
m74 lg
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PDF
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transistor D 1557
Abstract: d 1556 transistor transistor d 1556 1557 b transistor transistor 1555
Text: Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding, DC/DC and AC/DC
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PHP12N10E
T0220AB
transistor D 1557
d 1556 transistor
transistor d 1556
1557 b transistor
transistor 1555
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PDF
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current mirrors wilson
Abstract: 8E-15 2N3906 EP2015ACN EP2015C EP2015CM EP2015CN MPQ3906 TPQ3906 PNP Monolithic Transistor Pair
Text: EP2015C/EP2015AC HIGH PERFORMANCE ANALOG INTEGRATED ClRCunS FastQuad PNP Array F eatu res G eneral D escrip tion • • • • • The EP2015 family are quad monolithic vertical P N P transistor arrays which offer excellent parametric matching and high speed performance. The 350 M Hz ft provides A.C. performance
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EP2015C/EP2015AC
2N3906
TPQ3906
MPQ3906
EP2015CN
MDP0031
EP2015ACN
EP2015CM
20-Lead
current mirrors wilson
8E-15
2N3906
EP2015C
MPQ3906
PNP Monolithic Transistor Pair
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PDF
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