15N60C5 Search Results

15N60C5 Price and Stock

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IXYS Corporation IXKC15N60C5 MOSFET N-CH 600V 15A ISOPLUS220
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXKC15N60C5	Tube			50	1 - 10 - 100 $3.2088 1000 $3.2088 10000 $3.2088	Buy Now
TME	IXKC15N60C5				1	1 $3.64 10 $2.6 100 $2.6 1000 $2.6 10000 $2.6	Get Quote
New Advantage Corporation	IXKC15N60C5		734		1	1 - 10 - 100 $9.65 1000 $9 10000 $9	Buy Now
IXYS Integrated Circuits Division IXKC15N60C5 MOSFET DIS.15A 600V N-CH ISOPLUS220 COOLMOS THT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ozdisan Elektronik	IXKC15N60C5		934			1 $7.42456 10 $7.42456 100 $6.7496 1000 $6.7496 10000 $6.7496	Buy Now

15N60C5 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: IXKC 15N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge	Original	15N60C5 ISOPLUS220TM E72873	PDF
Untitled Abstract: No abstract text available Text: IXKC 15N60C5 Advanced Technical Information ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω CoolMOS Power MOSFET Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge ISOPLUS220TM	Original	15N60C5 ISOPLUS220TM E72873	PDF
Untitled Abstract: No abstract text available Text: IXKC 15N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 15 A VDSS = 600 V RDS on) max = 0.165 Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge	Original	15N60C5 ISOPLUS220TM E72873 20090209b	PDF
GS54 Abstract: No abstract text available Text: IXKC 15N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 15 A VDSS = 600 V RDS on) max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge	Original	15N60C5 ISOPLUS220TM E72873 20090209b GS54	PDF
GS54 Abstract: No abstract text available Text: IXKC 15N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 15 A VDSS = 600 V RDS on max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge	Original	15N60C5 ISOPLUS220TM E72873 GS54	PDF
15N60 Abstract: 15N60C5 E72873 15n60c Text: IXKC 15N60C5 Advanced Technical Information CoolMOS 1 Power MOSFET ID25 = 15 A VDSS = 600 V RDS on) max = 0.165 Ω Electrically isolated back surface 2500 V electrical isolation N-Channel Enhancement Mode Low RDSon, high VDSS MOSFET Ultra low gate charge	Original	15N60C5 ISOPLUS220TM E72873 20080523a 15N60 15N60C5 E72873 15n60c	PDF
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2	PDF