R1560G2
Abstract: IRF450 ISL9R1560G2 TA49410 dt3800
Text: [ /Title ISL9R 1560G 2 /Subjec t (15A, 600V Stealth Diode) /Autho r () /Keyw ords (Intersi l Corpor ation, semico nducto r, 15A, 600V Stealth ™ Diode, TO247) /Creato r () /DOCI NFO pdfmar k [ /Page Mode /UseO ISL9R1560G2 TM Data Sheet September 2000
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1560G
ISL9R1560G2
ISL9R1560G2
R1560G2
IRF450
TA49410
dt3800
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Untitled
Abstract: No abstract text available
Text: 1200V XPTTM GenX3TM IGBTs VCES IC110 VCE sat tfi(typ) IXYP30N120C3 IXYH30N120C3 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 30A 4.0V 86ns TO-220 (IXYP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IC110
IXYP30N120C3
IXYH30N120C3
O-220
30N120C3
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IXYP30N120C3
Abstract: No abstract text available
Text: IXYP30N120C3 IXYH30N120C3 1200V XPTTM GenX3TM IGBTs VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 30A 4.0V 86ns TO-220 (IXYP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IXYP30N120C3
IXYH30N120C3
IC110
O-220
062in.
O-220
O-247
30N120C3
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information GenX3TM 600V IGBT Ultra Low Vsat PT IGBT for up to 5kHz switching IXGA36N60A3 IXGP36N60A3 IXGH36N60A3 VCES = 600V IC110 = 36A VCE sat ≤ 1.4V TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C
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IXGA36N60A3
IXGP36N60A3
IXGH36N60A3
IC110
O-263
O-220
36N60A3
7-03-08-A
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IXGH36N60A3
Abstract: 36N60 IXGA36N60A3 IXGP36N60A3 mj 330 36N60A3
Text: Preliminary Technical Information GenX3TM 600V IGBT Ultra Low Vsat PT IGBT for up to 5kHz switching IXGA36N60A3 IXGP36N60A3 IXGH36N60A3 VCES = 600V IC110 = 36A VCE sat ≤ 1.4V TO-263 (IXGA) G Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C
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IXGA36N60A3
IXGP36N60A3
IXGH36N60A3
IC110
O-263
O-220
O-247
36N60A3
7-03-08-A
IXGH36N60A3
36N60
IXGA36N60A3
IXGP36N60A3
mj 330
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mosfet 1200V 40A
Abstract: igbt 20A 1200v Igbts guide mosfet 1200V 30a smps HGTG11N120CND MOSFET 1200v 30a HGTD3N60A4S HGTP20N60A4 igbt 1200V 60A HGTD3N60B3S
Text: LC-96585.5 2-sided r2 8/24/00 7:22 PM Page 1 HOLE PUNCH THIS EDGE www.intersil.com Industrial IGBT family features a range of 600V Punch Through And 1200V Non Punch Through NPT . Solutions and Support 600V IGBT SELECTION GUIDE PACKAGE USABLE CURRENT TO-252AA
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LC-96585
O-252AA
HGTD3N60A4S
O-220AB
O-263AB
O-247
O-264AA
O-268AA
HGTD3N60C3S
HGT1S3N60A4S*
mosfet 1200V 40A
igbt 20A 1200v
Igbts guide
mosfet 1200V 30a smps
HGTG11N120CND
MOSFET 1200v 30a
HGTD3N60A4S
HGTP20N60A4
igbt 1200V 60A
HGTD3N60B3S
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swiching 30A current source
Abstract: 48N60C3 ixgh48n60c3 IXGH 48n60c3
Text: Preliminary Technical Information GenX3TM 600V IGBT IXGA48N60C3 IXGH48N60C3 IXGP48N60C3 High Speed PT IGBTs for 40-100kHz switching VCES = IC110 = VCE sat ≤ tfi(typ) = 600V 48A 2.5V 38ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C
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40-100kHz
IXGA48N60C3
IXGH48N60C3
IXGP48N60C3
IC110
O-263
IC110
O-220
48N60C3
0-07-A
swiching 30A current source
IXGH 48n60c3
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48N60C3
Abstract: IXGH48N60C3 IXGH 48n60c3 swiching 30A current source IXGA48N60C3 IXGP48N60C3 48N60
Text: GenX3TM 600V IGBT High Speed PT IGBTs for 40-100kHz switching IXGA48N60C3 IXGH48N60C3 IXGP48N60C3 VCES = IC110 = VCE sat ≤ tfi(typ) = 600V 48A 2.5V 38ns TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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40-100kHz
IXGA48N60C3
IXGH48N60C3
IXGP48N60C3
IC110
O-263
48N60C3
1-23-09-B
IXGH48N60C3
IXGH 48n60c3
swiching 30A current source
IXGA48N60C3
IXGP48N60C3
48N60
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IXGH48N60
Abstract: IXGH48N60B3 IXGA48N60B3 48n60 IXGP48N60 IXGP48N60B3
Text: GenX3TM 600V IGBT Medium speed low Vsat PT IGBTs 5-40 kHz switching IXGA48N60B3 IXGP48N60B3 IXGH48N60B3 VCES = 600V IC110 = 48A VCE sat ≤ 1.8V TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGA48N60B3
IXGP48N60B3
IXGH48N60B3
IC110
O-263
O-220
O-247
48N60B3D1
5-05-08-A
IXGH48N60
IXGH48N60B3
IXGA48N60B3
48n60
IXGP48N60
IXGP48N60B3
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Untitled
Abstract: No abstract text available
Text: GenX3TM 600V IGBT IXGA48N60B3 IXGP48N60B3 IXGH48N60B3 VCES = 600V IC110 = 48A VCE sat ≤ 1.8V Medium speed low Vsat PT IGBTs 5-40 kHz switching TO-263 (IXGA) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGA48N60B3
IXGP48N60B3
IXGH48N60B3
IC110
O-263
O-220
O-247
48N60B3D1
5-05-08-A
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Untitled
Abstract: No abstract text available
Text: SGTN15C120HW Insulated Gate Bipolar Transistor, IGBT 1200V, 15A High Speed Field Stop IGBT Features • Low gate charge Field Sotp Technology Low saturation voltage: VCE sat = 1.8V (@ IC = 15A, TC = 25C) RoHS compliant product Applications
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SGTN15C120HW
O-247
N15C120H
28-NOV-13
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HGTG30N60A4
Abstract: HGTD3N60A4S HGTG20N60A4D HGT1Y30N120CN HGTG5N120BND HGT1S3N60A4S HGT1S3N60B3S HGTD3N60B3S HGTP5N120BND HGTD7N60A4S
Text: IGBT Selection Guide TM 600V FAMILIES NOTE 1 IC RATED OR IC AT 110oC 3A TO-252AA (D-PAK) TO-220AB TO-263AB (D2-PAK) HGTD3N60A4S 2.7V 100ns HGTP3N60A4 2.7V 100ns HGT1S3N60A4S 2.7V 100ns HGTD3N60B3S 2.1V 175ns HGTP3N60B3 2.1V 175ns HGT1S3N60B3S 2.1V 175ns
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110oC
O-220AB
O-263AB
HGTD3N60A4S
100ns
HGTP3N60A4
HGT1S3N60A4S
HGTD3N60B3S
HGTG30N60A4
HGTD3N60A4S
HGTG20N60A4D
HGT1Y30N120CN
HGTG5N120BND
HGT1S3N60A4S
HGT1S3N60B3S
HGTD3N60B3S
HGTP5N120BND
HGTD7N60A4S
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Untitled
Abstract: No abstract text available
Text: GenX3TM 600V IGBTs IXGA36N60A3 IXGP36N60A3 IXGH36N60A3 VCES = 600V IC110 = 36A VCE sat 1.4V TO-263 AA (IXGA) Ultra Low Vsat PT IGBT for up to 5kHz Switching G E C (Tab) Symbol Test Conditions Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1M
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IXGA36N60A3
IXGP36N60A3
IXGH36N60A3
IC110
O-263
O-220AB
36N60A3
7-22-13-B
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Untitled
Abstract: No abstract text available
Text: 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) IXYH30N120C3D1 High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 30A 4.0V 86ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ
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IC110
IXYH30N120C3D1
O-247
IF110
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Untitled
Abstract: No abstract text available
Text: STGW20IH125DF STGWT20IH125DF 1250 V, 20 A IH series trench gate field-stop IGBT Datasheet - production data Features • Designed for soft commutation only TAB • Maximum junction temperature: TJ = 175 °C • Minimized tail current 2 • VCE sat = 2.0 V (typ.) @ IC = 15 A
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STGW20IH125DF
STGWT20IH125DF
O-247
DocID025269
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IXYH30N120C3D1
Abstract: No abstract text available
Text: Preliminary Technical Information IXYH30N120C3D1 1200V XPTTM GenX3TM IGBT w/ Diode VCES IC110 VCE sat tfi(typ) High-Speed IGBT for 20-50 kHz Switching = = ≤ = 1200V 30A 4.0V 86ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C
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IXYH30N120C3D1
IC110
O-247
IF110
062in.
IXYH30N120C3D1
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IRG4PC30S
Abstract: igbt 20A 1200v IRG4BC20 IRG4PC40W IRGS14 IRGS14C40L 100C IRG4BC20W IRG4BC30W IRG4BC30W-S
Text: International Rectifier EXISTING Products The IR IGBT Navigator NEW UPCOMING Products Products released to to be released within production in last 6next 3-4 months 9 months POTENTIAL Products no current plans. see bus.mgmt. Effective 15 June 2000 Voltage
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O-220
Pak/TO-262
O-220
O-247
Super247
IRGP20B120UD-E
IRG4BC40K
IRG4PC30K
IRG4PC40K
IRG4PC50K
IRG4PC30S
igbt 20A 1200v
IRG4BC20
IRG4PC40W
IRGS14
IRGS14C40L
100C
IRG4BC20W
IRG4BC30W
IRG4BC30W-S
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Untitled
Abstract: No abstract text available
Text: GenX3TM 600V IGBTs IXGI48N60C3 IXGA48N60C3 IXGP48N60C3 IXGH48N60C3 High-Speed PT IGBTs for 40-100kHz Switching Symbol Test Conditions VCES = IC110 = VCE sat ≤ tfi(typ) = Maximum Ratings VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ
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IXGI48N60C3
IXGA48N60C3
IXGP48N60C3
IXGH48N60C3
40-100kHz
IC110
48N60C3
6-23-11-C
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Untitled
Abstract: No abstract text available
Text: IXYP30N120C3 IXYH30N120C3 1200V XPTTM GenX3TM IGBTs VCES = IC110 = VCE sat tfi(typ) = High-Speed IGBT for 20-50 kHz Switching 1200V 30A 3.3V 88ns TO-220 (IXYP) Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 175°C TJ = 25°C to 175°C, RGE = 1M
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IXYP30N120C3
IXYH30N120C3
IC110
O-220
O-247
30N120C3
4N-C91)
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IXGH48N60C3
Abstract: IXGA48N60C3 IXGP48N60C3 IXGI48N60C3 IXGH48N60 48n60 IXGP48N60 48N60C3 IXGH 48n60c3 IXGH48N60C
Text: GenX3TM 600V IGBTs IXGI48N60C3 IXGA48N60C3 IXGP48N60C3 IXGH48N60C3 High-Speed PT IGBTs for 40-100kHz Switching VCES = IC110 = VCE sat ≤ tfi(typ) = Symbol Test Conditions VCES TC = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C, RGE = 1MΩ 600 V VGES Continuous
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40-100kHz
IXGI48N60C3
IXGA48N60C3
IXGP48N60C3
IXGH48N60C3
IC110
IC110
48N60C3
6-23-11-C
IXGH48N60C3
IXGH48N60
48n60
IXGP48N60
IXGH 48n60c3
IXGH48N60C
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APT28GA60BD15
Abstract: No abstract text available
Text: APT28GA60BD15 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT28GA60BD15
APT28GA60BD15
efficiency20
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400v 20A ultra fast recovery diode
Abstract: DIODE ED 15 APT36GA60BD15 APT6017LLL MIC4452
Text: APT36GA60BD15 600V High Speed PT IGBT T O24 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 7 through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
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APT36GA60BD15
400v 20A ultra fast recovery diode
DIODE ED 15
APT36GA60BD15
APT6017LLL
MIC4452
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Untitled
Abstract: No abstract text available
Text: IXYH30N120C3D1 1200V XPTTM IGBT GenX3TM w/ Diode VCES = IC110 = VCE sat tfi(typ) = High-Speed IGBT for 20-50 kHz Switching 1200V 30A 3.3V 88ns TO-247 AD Symbol Test Conditions Maximum Ratings VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1M
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IXYH30N120C3D1
IC110
O-247
IF110
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anode common fast recovery diode 15A 200V
Abstract: SML15SUZ06BC common anode 600v
Text: SML15SUZ06BC SEME LAB Ultrafast Recovery Diode 600 Volt, 2 x 15 Amp TO-247 Package Back of Case Cathode TECHNOLOGY The planar passivated and standard ultrafast recovery SML 15SUZ06BC diode features a triple charge control action utilising Semelab’s Graded Buffer Zone technology combined with
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SML15SUZ06BC
O-247
15SUZ06BC
anode common fast recovery diode 15A 200V
SML15SUZ06BC
common anode 600v
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