M22-XST
Abstract: KSS cable marker wago 870 3d printer 200913 plotter 350 XM-L 25817-8 plotter ip-220
Text: Item no. 258-297 Item no. 258-298 Thermal transfer printers Printing method Thermal/Thermal transfer Printing method Thermal/thermal transfer Ink ribbon for marker strips Print resolution 203 dpi Print width max. 104 mm Print resolution 300 dpi Label width
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SOP 8 200MIL
Abstract: serial flash 256Mb fast erase spi TM 1628 IC SOP Micron 512MB NOR FLASH HN29V1G91T-30 HN58C1001FPI-15 M5M51008DFP-70HI 256mb EEPROM Memory CSP-48 TSOP 28 SPI memory Package flash
Text: Renesas Memory General Catalog 2003.11 Renesas Memory General Catalog Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with
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D-85622
REJ01C0001-0100Z
SOP 8 200MIL
serial flash 256Mb fast erase spi
TM 1628 IC SOP
Micron 512MB NOR FLASH
HN29V1G91T-30
HN58C1001FPI-15
M5M51008DFP-70HI
256mb EEPROM Memory
CSP-48
TSOP 28 SPI memory Package flash
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Untitled
Abstract: No abstract text available
Text: IS61DDP2B22M18A IS61DDP2B21M36A 2Mx18, 1Mx36 36Mb DDR-IIP Burst 2 CIO Synchronous SRAM (2.0 Cycle Read Latency) FEATURES • 1Mx36 and 2Mx18 configuration available. On-chip delay-locked loop (DLL) for wide data valid
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IS61DDP2B22M18A
IS61DDP2B21M36A
2Mx18,
1Mx36
2Mx18
400MHz
333MHz
300MHz
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Untitled
Abstract: No abstract text available
Text: IS61QDP2B41M18A IS61QDP2B451236A 1Mx18 , 512Kx36 18Mb QUAD-P Burst 4 SYNCHRONOUS SRAM (2.0 Cycle Read Latency) FEATURES • 512Kx36 and 1Mx18 configuration available. On-chip delay-locked loop (DLL) for wide data valid
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IS61QDP2B41M18A
IS61QDP2B451236A
1Mx18
512Kx36
1Mx18
400MHz
333MHz
300MHz
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Untitled
Abstract: No abstract text available
Text: IS61QDB41M18A IS61QDB451236A 1Mx18, 512Kx36 18Mb QUAD Burst 4 SYNCHRONOUS SRAM FEATURES • 512Kx36 and 1Mx18 configuration available. On-chip delay-locked loop (DLL) for wide data valid
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IS61QDB41M18A
IS61QDB451236A
1Mx18,
512Kx36
1Mx18
IS61QDB451236A
15x17x1
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Untitled
Abstract: No abstract text available
Text: IS61DDP2B21M18A IS61DDP2B251236A 1Mx18, 512Kx36 18Mb DDR-IIP Burst 2 CIO Synchronous SRAM (2.0 Cycle Read Latency) FEATURES • 512Kx36 and 1Mx18 configuration available. On-chip delay-locked loop (DLL) for wide data valid
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IS61DDP2B21M18A
IS61DDP2B251236A
1Mx18,
512Kx36
1Mx18
400MHz
333MHz
300MHz
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Untitled
Abstract: No abstract text available
Text: IS61DDP2B44M18A/A1/A2 IS61DDP2B42M36A/A1/A2 4Mx18, 2Mx36 72Mb DDR-IIP Burst 4 CIO SYNCHRONOUS SRAM (2.0 Cycle Read Latency) FEATURES • 2Mx36 and 4Mx18 configuration available.
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IS61DDP2B44M18A/A1/A2
IS61DDP2B42M36A/A1/A2
4Mx18,
2Mx36
4Mx18
13x15
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Untitled
Abstract: No abstract text available
Text: IS61QDP2B41M18A/A1/A2 IS61QDP2B451236A/A1/A2 1Mx18 , 512Kx36 18Mb QUADP Burst 4 SYNCHRONOUS SRAM (2.0 Cycle Read Latency) FEATURES • 512Kx36 and 1Mx18 configuration available.
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IS61QDP2B41M18A/A1/A2
IS61QDP2B451236A/A1/A2
1Mx18
512Kx36
1Mx18
13x15
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Untitled
Abstract: No abstract text available
Text: K7Q323684M K7Q321884M 1Mx36 & 2Mx18 Preliminary b4 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. September 5, 2001 Advance 0.1 1. Changed Pin configuration at x36 organization.
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K7Q323684M
K7Q321884M
1Mx36
2Mx18
1Mx36-bit,
2Mx18-bit
K7Q3236
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Untitled
Abstract: No abstract text available
Text: K7Q323682M K7Q321882M 1Mx36 & 2Mx18 Preliminary b2 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. September, 5 2001 Advance 0.1 1. Changed Pin configuration at x36 organization.
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K7Q323682M
K7Q321882M
1Mx36
2Mx18
1Mx36-bit,
2Mx18-bit
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capacitor 0.33uf x2
Abstract: .0068uf "class x2" capacitor 0.15 .1uf M 275 vac MKP
Text: MKP Class X2 EMI/RFI Boxed Metallized polypropylene film capacitors Features • Metallized polypropylene High dvdt Small size Low self inductance Low ESR Across the line Antenna coupling Applications EMI Filter Line by pass
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100VDC
500VDC
100VDC
500VDC
0068uF,
E317135
E317132
SE/0252-3
GB/T14472-1998
capacitor 0.33uf x2
.0068uf
"class x2" capacitor 0.15
.1uf M 275 vac MKP
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JTAG 10P
Abstract: K7R641882M-FC25 K7R640982M-FC25 K7R643682M-FC20
Text: K7R643682M K7R641882M K7R640982M Preliminary 2Mx36 & 4Mx18 & 8Mx9 QDRTM II b2 SRAM Document Title 2Mx36-bit, 4Mx18-bit, 8Mx9-bit QDRTM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Sep, 14 2002 Advance 0.1 1. Update AC timing characteristics.
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K7R643682M
K7R641882M
K7R640982M
2Mx36
4Mx18
2Mx36-bit,
4Mx18-bit,
K7R640982M
JTAG 10P
K7R641882M-FC25
K7R640982M-FC25
K7R643682M-FC20
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Untitled
Abstract: No abstract text available
Text: K7R323682M K7R321882M K7R320982M K7R320882M 1Mx36 & 2Mx18 & 4Mx9 & 4Mx8 QDRTM II b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx9-bit, 4Mx8-bit QDR TM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June, 30 2001 Advance 0.1
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K7R323682M
K7R321882M
K7R320982M
K7R320882M
1Mx36
2Mx18
1Mx36-bit,
2Mx18-bit,
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K7R643684
Abstract: No abstract text available
Text: K7R643684M K7R641884M 2Mx36 & 4Mx18 QDRTM II b4 SRAM 72Mb M-die QDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7R643684M
K7R641884M
2Mx36
4Mx18
11x15
K7R643684
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Untitled
Abstract: No abstract text available
Text: K7Q323652M K7Q321852M 1Mx36 & 2Mx18 Preliminary b2 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Sep. 5. 2001 Advance 0.1 1. Reserved pin for high density name change from NC to Vss/SA
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K7Q323652M
K7Q321852M
1Mx36-bit,
2Mx18-bit
1Mx36
2Mx18
-20part
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Untitled
Abstract: No abstract text available
Text: K7I323684C K7I321884C Preliminary 1Mx36 & 2Mx18 DDRII CIO b4 SRAM 36Mb DDRII SRAM Specification 165 FBGA with Pb & Pb-Free RoHS compliant INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K7I323684C
K7I321884C
1Mx36
2Mx18
11x15
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Untitled
Abstract: No abstract text available
Text: K7J643682M K7J641882M Preliminary 2Mx36 & 4Mx18 DDR II SIO b2 SRAM Document Title 2Mx36-bit, 4Mx18-bit DDR II SIO b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. Mar. 9, 2003 Advance 0.1 1. Correct the JTAG ID register definition
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K7J643682M
K7J641882M
2Mx36
4Mx18
2Mx36-bit,
4Mx18-bit
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Untitled
Abstract: No abstract text available
Text: Samsung Samsung Secret Secret SAMSUNG QDRII+/DDRII+ 16Mb C-die Specification Change Notice July, 2008 Product Planning & Application Engineering Team MEMORY DIVISION SAMSUNG ELECTRONICS Co., LTD Product Product Planning Planning & & Application Application Eng.
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K7K1636T2C
K7K1618T2C
512Kx36
K7S1636T4C
K7S1618T4C
1Mx18
11x15
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Untitled
Abstract: No abstract text available
Text: K7Q323654M K7Q321854M 1Mx36 & 2Mx18 Preliminary b4 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Sep. 5, 2001 Advance 0.1 1. Reserved pin for high density name change from NC to Vss/SA
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K7Q323654M
K7Q321854M
1Mx36-bit,
2Mx18-bit
1Mx36
2Mx18
-20part
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Untitled
Abstract: No abstract text available
Text: Preliminary K7I643682M K7I641882M 2Mx36 & 4Mx18 DDRII CIO b2 SRAM Document Title 2Mx36-bit, 4Mx18-bit DDRII CIO b2 SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Mar. 9, 2003 Advance 0.1 1. Correct the JTAG ID register definition
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K7I643682M
K7I641882M
2Mx36-bit,
4Mx18-bit
2Mx36
4Mx18
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Untitled
Abstract: No abstract text available
Text: K7Q323682M K7Q321882M 1Mx36 & 2Mx18 Preliminary b2 SRAM QDRTM Document Title 1Mx36-bit, 2Mx18-bit QDRTM SRAM Revision History Rev. No. History Draft Date Remark 0.0 1. Initial document. Sep, 5 2001 Advance 0.1 1. Changed Pin configuration at x36 organization.
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K7Q323682M
K7Q321882M
1Mx36-bit,
2Mx18-bit
1Mx36
2Mx18
-20part
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K7R323682M-FC20
Abstract: K7R320982M-FC20
Text: K7R323682M K7R321882M K7R320982M K7R320882M Preliminary 1Mx36 & 2Mx18 & 4Mx9 & 4Mx8 QDRTM II b2 SRAM Document Title 1Mx36-bit, 2Mx18-bit, 4Mx9-bit, 4Mx8-bit QDR TM II b2 SRAM Revision History History Draft Date Remark 0.0 1. Initial document. June, 30 2001
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K7R323682M
K7R321882M
K7R320982M
K7R320882M
1Mx36
2Mx18
1Mx36-bit,
2Mx18-bit,
K7R323682M-FC20
K7R320982M-FC20
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Untitled
Abstract: No abstract text available
Text: 10 -HE A A\ S M L — / -7 TRADE MARK I HOUSING (PA, UL9AV-0) z : A - ? -ft u Pz z TERMINAL I (7x7) i r h r h r h r h r h r h r h r h n n n n r 1 i n n n Mn n Ji I A o„4 I f (0.32) ILLl=j^4±4 1 (15x17^77177) I I ( 'I PAYfi. —7 V/cTIE I T T 1= 0.32)
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15x17
5330T,
Lflt777â
20DoA7/E1
EN-02JA
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Untitled
Abstract: No abstract text available
Text: 5 4 .3 6 max. 4 4 max. K o d ie r u n g / c odin g , ~ \ , _ _i_ _ i _ 16 E ia 15x12341 = 1381 1 0 4 - 9 0 0 3 5 C32F a,c H a n d lo t / m a n u e l s o ld e r in g 5.5mm 49.36±0.1 15x17341 = 1381 QK II / c la s s 2 Standard Kontakt / Standard Contact |5.Sinin|
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15x12341
15x17341
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