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    161-250 DIODE Search Results

    161-250 DIODE Result Highlights (5)

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    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    161-250 DIODE Datasheets Context Search

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    Diode BA 148

    Abstract: BA 811
    Text: SKT 250 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Stud Thyristor Line Thyristor /- /- /$- / 11 ?11


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    BAR16-1

    Abstract: top marking c2 sot23 BAR14-1 MARKING GP SOT23 BAR15-1 marking L8s
    Text: BAR14-1.BAR16-1 Silicon PIN Diodes 3  RF switch, RF attenuator for frequencies above 10 MHz  Low distortion faktor  Long-term stability of electrical characteristics BAR14-1 BAR15-1 BAR16-1 3 3 3 1 2 2 1 2 1 VPS05161 2 EHA07006 EHA07004 EHA07005 1 Type


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    BAR14-1. BAR16-1 BAR15-1 BAR14-1 EHA07006 EHA07004 EHA07005 VPS05161 BAR16-1 top marking c2 sot23 BAR14-1 MARKING GP SOT23 BAR15-1 marking L8s PDF

    829B

    Abstract: marking j5a 832B ZC836BTA ON code 829B ZV931 ZC930 MARKING CF sot23 ZC829ATA marking j3a
    Text: 830 series SILICON 28V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise


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    ZC829, ZDC833, ZMV829, ZMDC830, ZV831 200pA) 829B marking j5a 832B ZC836BTA ON code 829B ZV931 ZC930 MARKING CF sot23 ZC829ATA marking j3a PDF

    ON code 829B

    Abstract: sot23 mark code CB 829B 832B ZMDC830 ZMV835BTA sot23 mark code AE marking j3a marking j5a ZV931
    Text: 830 SERIES SILICON 25V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low


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    ZC829, ZDC833, ZMV829, ZMDC830, ZV831 OT323 OD523 OD323 200pA) ON code 829B sot23 mark code CB 829B 832B ZMDC830 ZMV835BTA sot23 mark code AE marking j3a marking j5a ZV931 PDF

    4420 Transistor

    Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
    Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.


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    ZXTS1000E6 OT23-6 ZXTS1000E6TA ZXTS1000E6TC 4420 Transistor transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748 PDF

    HC4-DC24V

    Abstract: digital relay 12v 3a datasheet HC2-H-DC24V-F relay 12v 100A HC1-H-AC12V-F HC1-H-AC24V-F HC4-H-AC120V HC4E-H-DC48V HC3-DC24V r0123
    Text: HC Standard type Amber sealed type Keep Latching relay With diode type FROM SEQUENCE TO POWER CIRCUITS COMPATIBLE WORLDWIDE HC RELAY PRODUCT TYPES FEATURES TYPICAL APPLICATIONS 1. Long track record means reliable quality. 2. Can provide switching across the


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    081008D HC4-DC24V digital relay 12v 3a datasheet HC2-H-DC24V-F relay 12v 100A HC1-H-AC12V-F HC1-H-AC24V-F HC4-H-AC120V HC4E-H-DC48V HC3-DC24V r0123 PDF

    Untitled

    Abstract: No abstract text available
    Text: HC FROM SEQUENCE TO POWER CIRCUITS COMPATIBLE WORLDWIDE Standard type Amber sealed type Keep Latching relay With diode type HC RELAY PRODUCT TYPES FEATURES TYPICAL APPLICATIONS 1. Long track record means reliable quality. 2. Can provide switching across the


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    auto12 081008D PDF

    HC4-H-DC24V

    Abstract: HC2K-DC48V-F HC2K-DC24V-F dc 6v to dc12v circuit diagram digital relay 12v 3a datasheet HC2-H-DC24V-F HC4-DC24V HC1-H-AC12V-F HC1-H-AC24V-F HC1-HP-DC24V
    Text: HC Standard type Amber sealed type Keep Latching relay With diode type FROM SEQUENCE TO POWER CIRCUITS COMPATIBLE WORLDWIDE HC RELAY PRODUCT TYPES FEATURES TYPICAL APPLICATIONS 1. Long track record means reliable quality. 2. Can provide switching across the


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    081008D HC4-H-DC24V HC2K-DC48V-F HC2K-DC24V-F dc 6v to dc12v circuit diagram digital relay 12v 3a datasheet HC2-H-DC24V-F HC4-DC24V HC1-H-AC12V-F HC1-H-AC24V-F HC1-HP-DC24V PDF

    MARKING SOT23

    Abstract: sot23 mark code A17 ZC930 ZV931 ZC930TA ZC931TA ZC932TA ZC933ATA ZC933TA ZC934ATA
    Text: ZC930, ZMV930, ZV931 series SILICON 12V HYPERABRUPT VARACTOR DIODES Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in


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    ZC930, ZMV930, ZV931 200pA) MARKING SOT23 sot23 mark code A17 ZC930 ZC930TA ZC931TA ZC932TA ZC933ATA ZC933TA ZC934ATA PDF

    bzx85c180

    Abstract: BZX85
    Text: BZX85 Series Zener Diodes e V Range 3.6 to 200V g a t l o Power Dissipation 1.3W V ed e d n g e t n x a E R Z DO-204AL DO-41 max. .161 (4.1) min. 1.102 (28.0) min. 1.102 (28.0) Features max. ∅ 0.102 (2.6) Cathode Mark max. ∅ 0.034 (0.86) • Silicon Planar Power Zener Diodes.


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    BZX85 DO-204AL DO-41) DO-41Glass 10K/box 10K/box bzx85c180 PDF

    BZX85

    Abstract: BZX85-B39 BZX85 1.3W B20 zener diode glass BZX85-Series BZX85-C3V6 BZX85-C3V9 BZX85-C4V3 BZX85-C4V7 BZX85-C5V1
    Text: BZX85 Series Zener Diodes e V Range 3.6 to 200V g a t l o Power Dissipation 1.3W V ed e d n g e t n x a E R Z DO-204AL DO-41 Glass max. .161 (4.1) min. 1.102 (28.0) min. 1.102 (28.0) Features max. ∅ 0.102 (2.6) Cathode Mark max. ∅ 0.034 (0.86) • Silicon Planar Power Zener Diodes.


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    BZX85 DO-204AL DO-41 DO-41Glass 10K/box BZX85-B120 BZX85-C130 BZX85-B130 BZX85-C150 BZX85-B150 BZX85-B39 BZX85 1.3W B20 zener diode glass BZX85-Series BZX85-C3V6 BZX85-C3V9 BZX85-C4V3 BZX85-C4V7 BZX85-C5V1 PDF

    ZC930

    Abstract: ZV931 AK 2025 ZC930TA ZC931TA ZC932TA ZC933ATA ZC933TA ZC934ATA ZC934TA
    Text: ZC930, ZMV930, ZV931 series SILICON 12V HYPERABRUPT VARACTOR DIODES Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise


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    ZC930, ZMV930, ZV931 OD323 200pA) OD523 APRI6100 ZC930 AK 2025 ZC930TA ZC931TA ZC932TA ZC933ATA ZC933TA ZC934ATA ZC934TA PDF

    Untitled

    Abstract: No abstract text available
    Text: BZW06-5V8.BZW06-376 BZW06-5V8B.BZW06-376B 600 W Unidirectional and Bidirectional Transient Voltage Suppressor Diodes DO-15 Plastic ø3.05±0.1 ø0.8±0.05 Dimensions in mm. Peak Pulse Power Rating At 1 ms. Exp. 600 W Reverse stand-off Voltage


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    BZW06-5V8. BZW06-376 BZW06-5V8B. BZW06-376B DO-15 Oct-09 BZW06 BZW06B 100ns PDF

    marking 47s

    Abstract: No abstract text available
    Text: BAS 40-07W Silicon Schottky Diode • General-purpose diode for high-speed switching 3 • Circuit protection 4 • Voltage clamping • High-level detecting and mixing 2 1 VPS05605 4 1 3 2 EHA07008 Type Marking BAS 40-07W 47s Pin Configuration 1=C1 2=C2 3=A2


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    0-07W VPS05605 EHA07008 OT-343 EHB00040 EHB00041 Oct-07-1999 EHD07068 marking 47s PDF

    BYY58

    Abstract: BYY57 800 byy58 1200 BYY58-400 BYY57/700 Byy57 BYY58/400 "Power rectifier Diode" BYY58-600 BYY57-150
    Text: BYY57 / BYY58 35A Silicon Power Rectifier Diode Part no. Description The BYY57/58 are hermetically sealed 35Adiodes, which are available in different reverse voltage classes up to 1500V. The diodes can be delivered with limited forward voltage and reverse current differences for


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    BYY57 BYY58 BYY57/58 35Adiodes, BYY57-1200 BYY58sales BYY58 BYY57 800 byy58 1200 BYY58-400 BYY57/700 BYY58/400 "Power rectifier Diode" BYY58-600 BYY57-150 PDF

    Untitled

    Abstract: No abstract text available
    Text: Bulletin 127101 rev.A 09/97 International IQR Rectifier IRK. SERIES THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules 135 A 140 A 160 A Features • H ig h v o lta g e ■ E lectrically Isolated base plate ■ 3000 V RMSIsolating voltage


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    ULE78996 D03QQb5 PDF

    IRKH135-16D25

    Abstract: RK135
    Text: Bulletin 127101 rev. A 09/97 International lö R Rectifier IRK. SERIES THYRISTOR/DIODE and INT-A-pak Power Modules THYRISTOR/THYRISTOR Features • H igh v o lta g e I E le c tric a lly is o la te d b a s e p la te ■ 3 0 0 0 V R M gis o la tin g v o lta g e


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    Untitled

    Abstract: No abstract text available
    Text: Bulletin 127101 rev. B 04/98 International IO R Rectifier IRK. SERIES THYRISTOR/ DIODE and INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 1 3 5 A • H ig h v o lt a g e I E le c t r ic a lly is o la te d b a s e p la te ■ 3 0 0 0 V RMS is o la tin g v o lt a g e


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    L1385

    Abstract: IRK42 IRKH162
    Text: 5*ÌE D • IINR MÖSSMSH QOIBETO 70S U M - . 1 3 5 , SCR I SCR and SCR / DIODE , 3 e , , | R, | NEW INT-A-pak Power Modules INTERNATIONAL RECTIFIER Features ■ H igh v o lta g e ■ E le c tric a lly is o la te d b a s e p la te ■ 3 0 0 0 V RMS iso latin g v o lta g e


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    10ohri L1385 IRK42 IRKH162 PDF

    IRKH162-14D20

    Abstract: IRKH135-16D25
    Text: I 4Ô55452 0Glb7S5 157 M I N R SERIES IRK.135, .136, .141, .142, .161, .162 International S Rectifier SCR I SCR and SCR / DIODE Features NEW INT-A-pak Power Modules INTERNATIONAL RECTIFIER • High voltage ■ Electrically isolated base plate ■ 3000 V RMS isolating voltage


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    10ohri 36-Thermal IRKH162-14D20 IRKH135-16D25 PDF

    Untitled

    Abstract: No abstract text available
    Text: S1E D • Û 1 3 tib71 Q D D 3 4 0 ^ 713 M S E K C SEMIKRDN S E M I K R O N INC Thyr istor Vrsm Vdrm Vrrm V V Diode Vrsm Vrrm V 1500 1400 2000 1700 1600 2500 2300 2200 3000 = 90 °<2 R.M.S. motor current pe phase) IMRMS 320 A (T e a s e | 410 A 360 A SKKH 131/14 E 20 SKKH 161/14 E 20 SKKH 210/14 E 20


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    tib71 SKKH131 SKKL131 SKKH161 SKKL161 SKKH210 SKKL210 SKKT131, SKKT161, PDF

    ixsn35n100au1

    Abstract: No abstract text available
    Text: 4bflbEEb GGanL»? D34 IIX Y nixYS IXSN35N100AU1 PRELIMINARY D ATA SHEET IGBT miniBLOC with Diode C 25 <TÎ VC ES T e s t C o n d itio n s VcES T j =25°C to 150°C 600 V v CGR T,J = 25°C to 150°C; RIjc „ = 1 MQ 600 V VOES C ontinuous ±20 V v GEM Transient


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    IXSN35N100AU1 OT-227B 1250C, 80A/us D-68916; ixsn35n100au1 PDF

    ERZC14DK911

    Abstract: 15g470km ERZ-C20DK112 ERZ-C05DK201u varistor tnr TNR15G470K TNR G Series ERZC07DK471 10DK471 15G470K
    Text: TYPE VSA VARISTORS TRANSIENT / SURGE ABSORBER APPLICATIONS FEATURES Transistor, diode, IC, thyristor and triac semiconductor protection. Surge protection in consumer electronics. Surge protection in industrial electronics. Surge protection in communication, measuring and


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    18vto zAC14DK911 tVSAC20DK911 ERZ-C10DK911 ERZ-C14DK911 ERZ-C20DK911 AC10DK102 tVSAC14DK102 fVSAC20DK102 ERZ-C10DK102 ERZC14DK911 15g470km ERZ-C20DK112 ERZ-C05DK201u varistor tnr TNR15G470K TNR G Series ERZC07DK471 10DK471 15G470K PDF

    12 sot-23

    Abstract: BAW100 ration BGX50A Schottky Diode SOT-89 BAV70 BAV74 BAV99 d400 78 sot-89
    Text: Discrete Semiconductors Schottky diodes Type BAS 40-04 BAS 40-05 BAS 40-06 BAS 70-04 BAS 70-05 BAS 70-06 BAT 14-038 BAT 14-039 Maximum ratings h mA V 40 40 40 70 70 70 2 2 >40 >40 >40 >15 >15 >15 20 20 nA Cd pF Package outlines Pin configu­ Type ration No.


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