Diode BA 148
Abstract: BA 811
Text: SKT 250 power semiconductor power electronics igbt bridge rectifier diode thyristor cib rectifier ipm driver inverter converter thyristor module gleichrichter brückengleichrichter leistungselektronik Stud Thyristor Line Thyristor /- /- /$- / 11 ?11
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BAR16-1
Abstract: top marking c2 sot23 BAR14-1 MARKING GP SOT23 BAR15-1 marking L8s
Text: BAR14-1.BAR16-1 Silicon PIN Diodes 3 RF switch, RF attenuator for frequencies above 10 MHz Low distortion faktor Long-term stability of electrical characteristics BAR14-1 BAR15-1 BAR16-1 3 3 3 1 2 2 1 2 1 VPS05161 2 EHA07006 EHA07004 EHA07005 1 Type
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BAR14-1.
BAR16-1
BAR15-1
BAR14-1
EHA07006
EHA07004
EHA07005
VPS05161
BAR16-1
top marking c2 sot23
BAR14-1
MARKING GP SOT23
BAR15-1
marking L8s
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829B
Abstract: marking j5a 832B ZC836BTA ON code 829B ZV931 ZC930 MARKING CF sot23 ZC829ATA marking j3a
Text: 830 series SILICON 28V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise
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ZC829,
ZDC833,
ZMV829,
ZMDC830,
ZV831
200pA)
829B
marking j5a
832B
ZC836BTA
ON code 829B
ZV931
ZC930
MARKING CF sot23
ZC829ATA
marking j3a
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ON code 829B
Abstract: sot23 mark code CB 829B 832B ZMDC830 ZMV835BTA sot23 mark code AE marking j3a marking j5a ZV931
Text: 830 SERIES SILICON 25V HYPERABRUPT VARACTOR DIODES ZC829, ZDC833, ZMV829, ZMDC830, ZV831 Series Device description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low
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ZC829,
ZDC833,
ZMV829,
ZMDC830,
ZV831
OT323
OD523
OD323
200pA)
ON code 829B
sot23 mark code CB
829B
832B
ZMDC830
ZMV835BTA
sot23 mark code AE
marking j3a
marking j5a
ZV931
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4420 Transistor
Abstract: transistor b 622 pnp transistor d 640 Schottky Diode 40V 5A ZXTS1000E6 ZXTS1000E6TA ZXTS1000E6TC 0118 transistor High voltage fast switching power transistor pnp DSA003748
Text: ZXTS1000E6 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR AND SCHOTTKY DIODE SUMMARY Transistor: VCEO=-12V, I C= -1.25A Schottky Diode: VR=40V; IC= 0.5A DESCRIPTION A PNP transistor and a Schottky Barrier diode contained in a single 6 leaded SOT23 package.
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ZXTS1000E6
OT23-6
ZXTS1000E6TA
ZXTS1000E6TC
4420 Transistor
transistor b 622
pnp transistor d 640
Schottky Diode 40V 5A
ZXTS1000E6
ZXTS1000E6TA
ZXTS1000E6TC
0118 transistor
High voltage fast switching power transistor pnp
DSA003748
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HC4-DC24V
Abstract: digital relay 12v 3a datasheet HC2-H-DC24V-F relay 12v 100A HC1-H-AC12V-F HC1-H-AC24V-F HC4-H-AC120V HC4E-H-DC48V HC3-DC24V r0123
Text: HC Standard type Amber sealed type Keep Latching relay With diode type FROM SEQUENCE TO POWER CIRCUITS COMPATIBLE WORLDWIDE HC RELAY PRODUCT TYPES FEATURES TYPICAL APPLICATIONS 1. Long track record means reliable quality. 2. Can provide switching across the
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081008D
HC4-DC24V
digital relay 12v 3a datasheet
HC2-H-DC24V-F
relay 12v 100A
HC1-H-AC12V-F
HC1-H-AC24V-F
HC4-H-AC120V
HC4E-H-DC48V
HC3-DC24V
r0123
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Untitled
Abstract: No abstract text available
Text: HC FROM SEQUENCE TO POWER CIRCUITS COMPATIBLE WORLDWIDE Standard type Amber sealed type Keep Latching relay With diode type HC RELAY PRODUCT TYPES FEATURES TYPICAL APPLICATIONS 1. Long track record means reliable quality. 2. Can provide switching across the
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auto12
081008D
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HC4-H-DC24V
Abstract: HC2K-DC48V-F HC2K-DC24V-F dc 6v to dc12v circuit diagram digital relay 12v 3a datasheet HC2-H-DC24V-F HC4-DC24V HC1-H-AC12V-F HC1-H-AC24V-F HC1-HP-DC24V
Text: HC Standard type Amber sealed type Keep Latching relay With diode type FROM SEQUENCE TO POWER CIRCUITS COMPATIBLE WORLDWIDE HC RELAY PRODUCT TYPES FEATURES TYPICAL APPLICATIONS 1. Long track record means reliable quality. 2. Can provide switching across the
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081008D
HC4-H-DC24V
HC2K-DC48V-F
HC2K-DC24V-F
dc 6v to dc12v circuit diagram
digital relay 12v 3a datasheet
HC2-H-DC24V-F
HC4-DC24V
HC1-H-AC12V-F
HC1-H-AC24V-F
HC1-HP-DC24V
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MARKING SOT23
Abstract: sot23 mark code A17 ZC930 ZV931 ZC930TA ZC931TA ZC932TA ZC933ATA ZC933TA ZC934ATA
Text: ZC930, ZMV930, ZV931 series SILICON 12V HYPERABRUPT VARACTOR DIODES Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise performance. Available in
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ZC930,
ZMV930,
ZV931
200pA)
MARKING SOT23
sot23 mark code A17
ZC930
ZC930TA
ZC931TA
ZC932TA
ZC933ATA
ZC933TA
ZC934ATA
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bzx85c180
Abstract: BZX85
Text: BZX85 Series Zener Diodes e V Range 3.6 to 200V g a t l o Power Dissipation 1.3W V ed e d n g e t n x a E R Z DO-204AL DO-41 max. .161 (4.1) min. 1.102 (28.0) min. 1.102 (28.0) Features max. ∅ 0.102 (2.6) Cathode Mark max. ∅ 0.034 (0.86) • Silicon Planar Power Zener Diodes.
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BZX85
DO-204AL
DO-41)
DO-41Glass
10K/box
10K/box
bzx85c180
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BZX85
Abstract: BZX85-B39 BZX85 1.3W B20 zener diode glass BZX85-Series BZX85-C3V6 BZX85-C3V9 BZX85-C4V3 BZX85-C4V7 BZX85-C5V1
Text: BZX85 Series Zener Diodes e V Range 3.6 to 200V g a t l o Power Dissipation 1.3W V ed e d n g e t n x a E R Z DO-204AL DO-41 Glass max. .161 (4.1) min. 1.102 (28.0) min. 1.102 (28.0) Features max. ∅ 0.102 (2.6) Cathode Mark max. ∅ 0.034 (0.86) • Silicon Planar Power Zener Diodes.
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BZX85
DO-204AL
DO-41
DO-41Glass
10K/box
BZX85-B120
BZX85-C130
BZX85-B130
BZX85-C150
BZX85-B150
BZX85-B39
BZX85 1.3W
B20 zener diode glass
BZX85-Series
BZX85-C3V6
BZX85-C3V9
BZX85-C4V3
BZX85-C4V7
BZX85-C5V1
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ZC930
Abstract: ZV931 AK 2025 ZC930TA ZC931TA ZC932TA ZC933ATA ZC933TA ZC934ATA ZC934TA
Text: ZC930, ZMV930, ZV931 series SILICON 12V HYPERABRUPT VARACTOR DIODES Device Description A range of silicon varactor diodes for use in frequency control and filtering. Featuring closely controlled CV characteristics and high Q. Low reverse current ensures very low phase noise
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ZC930,
ZMV930,
ZV931
OD323
200pA)
OD523
APRI6100
ZC930
AK 2025
ZC930TA
ZC931TA
ZC932TA
ZC933ATA
ZC933TA
ZC934ATA
ZC934TA
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Untitled
Abstract: No abstract text available
Text: BZW06-5V8.BZW06-376 BZW06-5V8B.BZW06-376B 600 W Unidirectional and Bidirectional Transient Voltage Suppressor Diodes DO-15 Plastic ø3.05±0.1 ø0.8±0.05 Dimensions in mm. Peak Pulse Power Rating At 1 ms. Exp. 600 W Reverse stand-off Voltage
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BZW06-5V8.
BZW06-376
BZW06-5V8B.
BZW06-376B
DO-15
Oct-09
BZW06
BZW06B
100ns
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marking 47s
Abstract: No abstract text available
Text: BAS 40-07W Silicon Schottky Diode • General-purpose diode for high-speed switching 3 • Circuit protection 4 • Voltage clamping • High-level detecting and mixing 2 1 VPS05605 4 1 3 2 EHA07008 Type Marking BAS 40-07W 47s Pin Configuration 1=C1 2=C2 3=A2
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0-07W
VPS05605
EHA07008
OT-343
EHB00040
EHB00041
Oct-07-1999
EHD07068
marking 47s
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BYY58
Abstract: BYY57 800 byy58 1200 BYY58-400 BYY57/700 Byy57 BYY58/400 "Power rectifier Diode" BYY58-600 BYY57-150
Text: BYY57 / BYY58 35A Silicon Power Rectifier Diode Part no. Description The BYY57/58 are hermetically sealed 35Adiodes, which are available in different reverse voltage classes up to 1500V. The diodes can be delivered with limited forward voltage and reverse current differences for
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BYY57
BYY58
BYY57/58
35Adiodes,
BYY57-1200
BYY58sales
BYY58
BYY57 800
byy58 1200
BYY58-400
BYY57/700
BYY58/400
"Power rectifier Diode"
BYY58-600
BYY57-150
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Untitled
Abstract: No abstract text available
Text: Bulletin 127101 rev.A 09/97 International IQR Rectifier IRK. SERIES THYRISTOR/ DIODE and THYRISTOR/THYRISTOR INT-A-pak Power Modules 135 A 140 A 160 A Features • H ig h v o lta g e ■ E lectrically Isolated base plate ■ 3000 V RMSIsolating voltage
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ULE78996
D03QQb5
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IRKH135-16D25
Abstract: RK135
Text: Bulletin 127101 rev. A 09/97 International lö R Rectifier IRK. SERIES THYRISTOR/DIODE and INT-A-pak Power Modules THYRISTOR/THYRISTOR Features • H igh v o lta g e I E le c tric a lly is o la te d b a s e p la te ■ 3 0 0 0 V R M gis o la tin g v o lta g e
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Untitled
Abstract: No abstract text available
Text: Bulletin 127101 rev. B 04/98 International IO R Rectifier IRK. SERIES THYRISTOR/ DIODE and INT-A-pak Power Modules THYRISTOR/THYRISTOR Features 1 3 5 A • H ig h v o lt a g e I E le c t r ic a lly is o la te d b a s e p la te ■ 3 0 0 0 V RMS is o la tin g v o lt a g e
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L1385
Abstract: IRK42 IRKH162
Text: 5*ÌE D • IINR MÖSSMSH QOIBETO 70S U M - . 1 3 5 , SCR I SCR and SCR / DIODE , 3 e , , | R, | NEW INT-A-pak Power Modules INTERNATIONAL RECTIFIER Features ■ H igh v o lta g e ■ E le c tric a lly is o la te d b a s e p la te ■ 3 0 0 0 V RMS iso latin g v o lta g e
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10ohri
L1385
IRK42
IRKH162
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IRKH162-14D20
Abstract: IRKH135-16D25
Text: I 4Ô55452 0Glb7S5 157 M I N R SERIES IRK.135, .136, .141, .142, .161, .162 International S Rectifier SCR I SCR and SCR / DIODE Features NEW INT-A-pak Power Modules INTERNATIONAL RECTIFIER • High voltage ■ Electrically isolated base plate ■ 3000 V RMS isolating voltage
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10ohri
36-Thermal
IRKH162-14D20
IRKH135-16D25
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Untitled
Abstract: No abstract text available
Text: S1E D • Û 1 3 tib71 Q D D 3 4 0 ^ 713 M S E K C SEMIKRDN S E M I K R O N INC Thyr istor Vrsm Vdrm Vrrm V V Diode Vrsm Vrrm V 1500 1400 2000 1700 1600 2500 2300 2200 3000 = 90 °<2 R.M.S. motor current pe phase) IMRMS 320 A (T e a s e | 410 A 360 A SKKH 131/14 E 20 SKKH 161/14 E 20 SKKH 210/14 E 20
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tib71
SKKH131
SKKL131
SKKH161
SKKL161
SKKH210
SKKL210
SKKT131,
SKKT161,
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ixsn35n100au1
Abstract: No abstract text available
Text: 4bflbEEb GGanL»? D34 IIX Y nixYS IXSN35N100AU1 PRELIMINARY D ATA SHEET IGBT miniBLOC with Diode C 25 <TÎ VC ES T e s t C o n d itio n s VcES T j =25°C to 150°C 600 V v CGR T,J = 25°C to 150°C; RIjc „ = 1 MQ 600 V VOES C ontinuous ±20 V v GEM Transient
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IXSN35N100AU1
OT-227B
1250C,
80A/us
D-68916;
ixsn35n100au1
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ERZC14DK911
Abstract: 15g470km ERZ-C20DK112 ERZ-C05DK201u varistor tnr TNR15G470K TNR G Series ERZC07DK471 10DK471 15G470K
Text: TYPE VSA VARISTORS TRANSIENT / SURGE ABSORBER APPLICATIONS FEATURES Transistor, diode, IC, thyristor and triac semiconductor protection. Surge protection in consumer electronics. Surge protection in industrial electronics. Surge protection in communication, measuring and
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18vto
zAC14DK911
tVSAC20DK911
ERZ-C10DK911
ERZ-C14DK911
ERZ-C20DK911
AC10DK102
tVSAC14DK102
fVSAC20DK102
ERZ-C10DK102
ERZC14DK911
15g470km
ERZ-C20DK112
ERZ-C05DK201u
varistor tnr
TNR15G470K
TNR G Series
ERZC07DK471
10DK471
15G470K
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12 sot-23
Abstract: BAW100 ration BGX50A Schottky Diode SOT-89 BAV70 BAV74 BAV99 d400 78 sot-89
Text: Discrete Semiconductors Schottky diodes Type BAS 40-04 BAS 40-05 BAS 40-06 BAS 70-04 BAS 70-05 BAS 70-06 BAT 14-038 BAT 14-039 Maximum ratings h mA V 40 40 40 70 70 70 2 2 >40 >40 >40 >15 >15 >15 20 20 nA Cd pF Package outlines Pin configu Type ration No.
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