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    Untitled

    Abstract: No abstract text available
    Text: The line up for the small 2 3 Device Parallel schottky barrier diode has increased. ★ For signal Line Level shift. ★ High speed signal switching. TYPE. NO. VRM IO * VF@IO LOW IR SBD 30V 100mA 0.53V Max. PC・Cellular LOW VF SBD 30V 100mA 0.43V Max. PHS・Hybrid IC


    Original     		PDF RB480Y RB481Y RB480K RB481K RB731XN 1612size 100mA 200mA

    RB053L-30

    Abstract: No abstract text available
    Text: Schottky barrier diode Silicon Epitaxial Planer RB063L-30 Limits Reverse voltage (repetitive peak) VRM 30V Reverse voltage (DC) VR IO* 30V IFSM 70A Average rectified forward current Forward current surge peak (60Hz: ) DIMENSION (UNIT:mm) CATHODE MARK 1.5±0.2


    Original     		PDF RB063L-30 100mA RB053L-30

    ultra low drop, high current diode

    Abstract: sot23 a60 SOD123 footprint sot23 footprint PBSS4160T PBSS4350X PBSS5240V PMEG1020EV PMEG3005AEA PMEM4010PD
    Text: Semiconductors Taking the heat out of transistors and rectifiers Philips’ highly efficient low VCEsat BISS transistors and ultra low VF (MEGA) Schottky barrier rectifiers All electronic switches drain power and generate heat. But what could you do with transistors and rectifiers that are significantly more


    Original     		PDF OT666 PBSS5240V ultra low drop, high current diode sot23 a60 SOD123 footprint sot23 footprint PBSS4160T PBSS4350X PMEG1020EV PMEG3005AEA PMEM4010PD