MLPQ-16L
Abstract: SCHEMATIC DIAGRAM lcd 12v 5A 16SEPC270 LX2750 MMBT3904 NTD60N02R NTD70N03R op 2950
Text: LX2750 SINGLE INPUT SUPPLY PWM CONTROLLER WITH LDO CONTROLLER PRODUCTION DATA SHEET Pb Free Product DESCRIPTION The LX2750 controller IC is a compact synchronous Buck controller IC with 16 lead MLPQ package designed for step-down DC to DC converter applications.
|
Original
|
LX2750
LX2750
203REF
008REF
50BSC
059REF
MLPQ-16L
SCHEMATIC DIAGRAM lcd 12v 5A
16SEPC270
MMBT3904
NTD60N02R
NTD70N03R
op 2950
|
PDF
|
Untitled
Abstract: No abstract text available
Text: LX2750 SINGLE INPUT SUPPLY PWM CONTROLLER WITH LDO CONTROLLER PRODUCTION DATA SHEET Pb Free Product DESCRIPTION The LX2750 controller IC is a compact synchronous Buck controller IC with 16 lead MLPQ package designed for step-down DC to DC converter applications.
|
Original
|
LX2750
LX2750
203REF
008REF
50BSC
059REF
|
PDF
|
LX27
Abstract: H11M1
Text: LX2750 SINGLE INPUT SUPPLY PWM CONTROLLER WITH LDO CONTROLLER PRODUCTION DATA SHEET Pb Free Product FEATURES DESCRIPTION Single Input 12V Bus Voltage Excellent Dynamic Response with Selectable Feedforward Voltage Mode Control or Constant On Time Control Diode Emulation Mode Available
|
Original
|
LX2750
LX2750
203REF
50BSC
008REF
059REF
LX27
H11M1
|
PDF
|
MB8264
Abstract: MB8264-15 i-117 mb81416
Text: NMOS Dynamic RAMs Quick Cuide To Products in This Section D ev Ice O rg an ization Ac c m « Tim « max Pow er S u p p ly Volts P o w er D issip atio n Package P ag e MRM17-10 V U i117-12 16K x 1 16K x 1 100 nS 120 nS +5 +5 182/20 mW 160/20 mW 16-pin 16-pin
|
OCR Scan
|
MB8264A-10
r264A-12
B264A-15
-264A-12W
MBH264A-15W
H265-20
bk265A-l0
MB8265A-12
Vbc265A
MB8266A-1G
MB8264
MB8264-15
i-117
mb81416
|
PDF
|
MC3480
Abstract: Dynamic Memory Refresh Controller MC3242A RA54 64k nmos dynamic ram M6800 nmos to ttl interface CASE-710
Text: INTERFACE CIRCUITS continued gïïû ^ Offifetfife}©© ©oû(o] ©©oüSd^D NMOS Memories to TTL Systems MULTIPLEXED 16-PIN RAM CONTROL (For 4K, 16K, and 64K Dynamic Memories) MC3480 — Memory Controller. Used with all three levels of RAM. The memory controller chip is designed to greatly sim
|
OCR Scan
|
16-PIN
MC3480
M6800.
MC3242A
MC3480
MC3242A
A12/14
A13/15
Dynamic Memory Refresh Controller
RA54
64k nmos dynamic ram
M6800
nmos to ttl interface
CASE-710
|
PDF
|
a5 gnd
Abstract: NTE4164 NTE2117 NTE2164 BB 298 NTE2102 64k dynamic RAM 64k nmos static ram NTE2114 NTE2128
Text: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8 -B it Multiplying D/A Converter NTE2102 16-Lead DIP, See Diag. 249 NMOS, 1K Static RAM (SRAM), 350ns NTE2104 16-Lead DIP, See Diag. 249 NMOS, 4K Dynamic RAM (DRAM), 200ns
|
OCR Scan
|
NTE2056
16-Lead
NTE2102
350ns
NTE2104
200ns
NTE2107
22-Lead
a5 gnd
NTE4164
NTE2117
NTE2164
BB 298
64k dynamic RAM
64k nmos static ram
NTE2114
NTE2128
|
PDF
|
MCM2114P20
Abstract: MCM2114 MCM68A10 MCM6810 rams Sub-100 M6800 MCM2016H MCM2167H MCM4517
Text: Memories-MOS Random Access MemoBios NMOS RAMs — Dynamic High speed, high density and low cost have made N-Channel dynamic Random Access Memories the cornerstones of the expanding computer industries. Motorola NMOS RAMs combine high performance with excellent reliability.
|
OCR Scan
|
MCM4517
M6800
MCM2114
MCM2016H
N45/P45
N55/P55
N70/P70
sub-100
MCM2167H
P45/Z45
MCM2114P20
MCM68A10
MCM6810
rams
|
PDF
|
MC68121
Abstract: M6800 MCM2016 MC68120 MCM6810 MCM2114 MCM4517 MCM2016H MC6801 mc681
Text: MC6844 MCM68HC34 MC68120 MC68121 MC146818A M6800-Compatible Memory Parallel/Serial. 128 x 8-Bit Static RAM — Available in plastic and ceramic packages to coincide with the speed and tem perature specifications of the M6800 Family. MCM6810 Intelligent Peripheral Controller — This highly so
|
OCR Scan
|
MCM68HC34
MC6844
M6800-Compatible
M6800
MCM6810
MCM68HC34
MCM2114
MCM2016H
N45/P45
MC68121
MCM2016
MC68120
MCM6810
MCM4517
MC6801
mc681
|
PDF
|
Untitled
Abstract: No abstract text available
Text: MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2056 16-Lead DIP, See Diag. 249 8-B it Multiplying D/A Converter Range Control 0 Compensation A6 n 0 A7 0 V ret(-) A 5B ^ A1 Q 0 A8 (LSB) A2 B 0 Data Out a: Q A7 A3 Q Q Data In A 2 g 0 A6 A4 Q j A0 Q
|
OCR Scan
|
NTE2056
16-Lead
NTE2102
350ns
NTE2104
200ns
NTE2107
22-Lead
|
PDF
|
LM33256
Abstract: LM33256N 64K x 8 BIT DYNAMIC RAM LM33256K sanyo LC3564PL lc3664* sanyo LC324256 4m static ram 8K Static RAM 16k nmos dynamic ram
Text: SANYO SEMICONDUCTOR CORP Continued from preceding page. 3SE D • 7 n 7 D 7 b 0QD75b3 S ■ T'W'Zl-V- M E M O R I E S monolithic integrated circuit —-v.y *f* ; Type 1 . ij Package' Pins 4 Package’ -■Circuit Functions & Applications c : * j: MainSjedficafibns
|
OCR Scan
|
0QD75b3
150ns,
versionofLC3518B
ofLC3518B
ofLC3518BL
120ns,
LM33256
LM33256N
64K x 8 BIT DYNAMIC RAM
LM33256K
sanyo LC3564PL
lc3664* sanyo
LC324256 4m
static ram 8K
Static RAM
16k nmos dynamic ram
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors CMOS and NMOS 8-bit microcontroller family 3300 FAMILY CMOS continued TYPE 3359A ROM 2 RAM SPEED (MHz) 64 1-16 PACKAGE DIL28 S028 LQFP32 3745A 4.5k (OTP) 256 1-16 FUNCTIONS OM5501/2 16 I/O lines, 8-bit timer, RTC, VDD 1.8V-6V 2 Programmable
|
OCR Scan
|
DIL28
LQFP32
OM5501/2
755A/3756A
DIL28/S028
3354B
|
PDF
|
S443
Abstract: idt71682 s448 16k nmos dynamic ram S447
Text: C M O S STATIC RAMS 1 6 K 4 K x 4-B IT IDT 71681SA/LA IDT 71682SA/LA Separate Data Inputs and Outputs FEATURES: DESCRIPTION: • Separate data inputs and outputs • IDT71681SA/LA: outputs track inputs during write mode • IDT71682/SA/LA: high impedance outputs during write mode
|
OCR Scan
|
IDT71681SA/LA:
IDT71682/SA/LA:
15/20/25/35/45/55/70/85/100ns
12/15/20/25/35/45ns
IDT71681/2SA
225mW
100yw
IDT71681/2LA
24-pin
S443
idt71682
s448
16k nmos dynamic ram
S447
|
PDF
|
sc1007
Abstract: dt6167
Text: INTEGRATED DEVICE 14E D • 4Ö25771 00035tb 4 ■ IDT 6167SA IDT 6167LA CMOS STATIC RAM 16K 16K x 1-BIT TW6-23-05 FEATURES: DESCRIPTION: • High-speed (equal access and cycle time) The IDT6167 Is a 16,384-blt high-speed static RAM organized as 16K x 1. The part Is fabricated using IDT's high-performance, hlghreiiabllity tech nolog y-C E M O S . This state-of-the-art technology,
|
OCR Scan
|
00035tb
15/20/25/35/45/55/70/85/100ns
12/15/20/25/35ns
IDT6167SA
200mW
100pW
IDT6167LA
150mW
6167SA
6167LA
sc1007
dt6167
|
PDF
|
Y24121
Abstract: S444 S443
Text: INTEGRATE» DEVICE IME D • 4055771 0003304 fl CMOS STATIC RAMS 1 6K 4K x 4-BIT Integrated DevfceTèchnoiogy Inc ID T 7 1 6 8 1 S A /L A ID T 7 1 6 8 2 S A /L A Separate Data Inputs and Outputs T -yt> -Z 3 -0 $ FEATURES: DESCRIPTION: • Separate data Inputs and outputs
|
OCR Scan
|
IDT71681SA
IDT71681LA
IDT71682SA
IDT71682LAT
IDT71681/IDT71682are
384-bit
550mW.
DT71681SA/LA
IDT716B2SA/LA
BS771
Y24121
S444
S443
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 16K 2 K X 8 BIT IDT6116SA IDT6116LA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • Optimized for fast RISC processors including the IDT79R3000 • High-speed — Military: 20/25/35/45/55/70/90/120/150ns (max.) — Commercial: 15/20/25/35/45ns (max.)
|
OCR Scan
|
IDT6116SA
IDT6116LA
IDT79R3000
20/25/35/45/55/70/90/120/150ns
15/20/25/35/45ns
180mW
MIL-STD-883,
32-pin)
|
PDF
|
IC cs 4852
Abstract: dt6116 S0244
Text: INTEGRATE] DEVICE 3ÖE D • 4 Ö 2 S 7 7 1 G Q 0 Ö 1 4 1 =î « I D T _ - r - t u - 2 - V - l Z . IDT6116SA IDT6116LA CMOS STATIC RAM 1 6 K 2 K X 8 BIT) NOTICE SEE ORDER OF DATA FOR ERRATA IN FO RM AT IO N FEATURES: DESCRIPTION:
|
OCR Scan
|
2S771
IDT6116SA
1DT6116LA
IDT79R3000
20/25/35/45/55/70/90/120/150ns
15/20/25/35/45ns
180mW
100nW
IDT6116LA
IC cs 4852
dt6116
S0244
|
PDF
|
DS01003
Abstract: idt6116s GQ-01 MA5S771 IDT6116L s116l B-116S b116s
Text: INTEGRATE] DEVICE 3ÖE D • 4 Ö 2 S 7 7 1 G Q 0 Ö 1 4 1 =î « I D T _ - r - t u - 2 - V - l Z . IDT6116SA IDT6116LA CMOS STATIC RAM 1 6 K 2 K X 8 BIT) NOTICE SEE ORDER OF DATA FOR ERRATA IN FO RM AT IO N FEATURES: DESCRIPTION:
|
OCR Scan
|
2S771
IDT6116SA
IDT6116LA
IDT79R3000
20/25/35/45/55/70/90/120/150ns
15/20/25/35/45ns
IDT6116LA
MIL-STD-883,
32-pin)
DS01003
idt6116s
GQ-01
MA5S771
IDT6116L
s116l
B-116S
b116s
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CMOS STATIC RAM 16K 2 KX8 BIT IDT6116SA IDT6116LA Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • Optimized lo r fast RISC processors including the IDT79R3000 • High-speed — Military: 20/25/35/45/55/70/90/120/150ns (max.) — Commercial: 15/20/25/35/45ns (max.)
|
OCR Scan
|
IDT6116SA
IDT6116LA
IDT79R3000
20/25/35/45/55/70/90/120/150ns
15/20/25/35/45ns
180mW
IDT6116LA
MIL-STD-883,
32-pin)
|
PDF
|
KM424C256Z
Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J
|
OCR Scan
|
KM4164BP
KM41C256P
KM41C256J
KM41C256Z
KM41C257P
KM41C257J
KM41C257Z
KM41C258P
KM41C258J
KM41C258Z
KM424C256Z
SIMM 30-pin
30-pin SIMM RAM
KM44C256bp
KM41C1000BJ
257J
KM44C256BZ
1K x4 static ram
30-pin simm memory "16m x 8"
|
PDF
|
IC cs 4852
Abstract: s4148 S4-144
Text: INTEGRATED 14E D D E VI CE • 4 Ô 5 S 7 7 1 0 0 0 3 4 0 0 =i H CMOS STATIC RAM 1 6 K 2K x 8-BIT ID T 6 1 1 6 S A ID T 6 1 1 6 L A 'T - H 6 '2 S - \ Z FEATURES: DESCRIPTION: • Optimized for fast RISC processors Including the IDT79R3000 • High-speed
|
OCR Scan
|
5S771
6116SA
6116LA
23-\Z
theIDT79R3000
25/30/35/45/55/70/90/120/150ns
15/19/20/25/30/35/45ns
IDT6116SA
180mW
100pW
IC cs 4852
s4148
S4-144
|
PDF
|
S4-144
Abstract: IC cs 4852 T6116 6116LA25
Text: CMOS STATIC RAM 16K 2Kx 8-BIT (*/ integrated Devte Technology Inc IDT 6116SA IDT 6116LA FEATURES: DESCRIPTION: • O p tim ize d for fast RISC proce sso rs in clu d in g the IDT79R3000 • H igh-speed T h e ID T6116SA /LA is a 16,384-blt h ig h -sp ee d static RAM or
|
OCR Scan
|
6116SA
6116LA
IDT79R3000
5/19/20/25/30/35/45ns
IDT6116SA
100pW
IDT6116LA
160mW
S4-152
IDT6116SA/IDT6116LA
S4-144
IC cs 4852
T6116
6116LA25
|
PDF
|
2164 dynamic ram
Abstract: intel 8203 2164A 8202a intel microprocessor pin diagram 8202A intel 4002 8088 ram 256K pin diagram of intel IC 8203 diagram of IC 8203 Intel 2164
Text: in t e i 82C03 CMOS 64K DYNAMIC RAM CONTROLLER • Provides All Signals Necessary to NMOS 2164A and CMOS Control (51C64) 64K Dynamic Memories Internal Clock Capability ■ Directly Addresses and Drives Up to 64 Devices Without External Drivers Provides System Acknowledge and Trans
|
OCR Scan
|
82C03
51C64)
82C03
51C64
82C03.
2164 dynamic ram
intel 8203
2164A
8202a intel microprocessor pin diagram
8202A
intel 4002
8088 ram 256K
pin diagram of intel IC 8203
diagram of IC 8203
Intel 2164
|
PDF
|
Untitled
Abstract: No abstract text available
Text: in te i 82C03 CMOS 64K DYNAMIC RAM CONTROLLER Provides All Signals Necessary to NMOS 2164A and CMOS Control (51C64) 64K Dynamic Memories • Provides Refresh/Access Arbitration ■ Internal Clock Capability ■ Directly Addresses and Drives Up to 64 Devices Without External Drivers
|
OCR Scan
|
82C03
51C64)
82C03
51C6nd
82C03.
AFN-02144B
|
PDF
|
BIPOLAR PROM PROGRAMMING SPECIFICATION
Abstract: Cypress introduction to CMOS PROMs CMOS differential amplifier cascode Bipolar PROM programming sense amplifier bitline memory device cypress eproms
Text: Introduction to C M O S P R O M s SEMICONDUCTOR 1: Product Line Overview 3: Design Approach The Cypress CMOS family of PROMs span 4K to 512K bit densities, three functional configurations, and are all byte-wide. The product line is available in both 0.3 and 0.6
|
OCR Scan
|
|
PDF
|
