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    16M16 Search Results

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    16M16 Price and Stock

    Micron Technology Inc MT48LC16M16A2B4-6A-IT:G-TR

    IC DRAM 256MBIT PAR 54VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MT48LC16M16A2B4-6A-IT:G-TR Cut Tape 7,839 1
    • 1 $8.14
    • 10 $7.23
    • 100 $6.4178
    • 1000 $5.69345
    • 10000 $5.69345
    		Buy Now
    MT48LC16M16A2B4-6A-IT:G-TR Digi-Reel 7,839 1
    • 1 $8.14
    • 10 $7.23
    • 100 $6.4178
    • 1000 $5.69345
    • 10000 $5.69345
    		Buy Now
    MT48LC16M16A2B4-6A-IT:G-TR Reel 4,000 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $5.48106
    		Buy Now

    Micron Technology Inc MT46V16M16CY-5B-IT:M

    IC DRAM 256MBIT PARALLEL 60FBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MT46V16M16CY-5B-IT:M Tray 7,138 1
    • 1 $8.02
    • 10 $7.117
    • 100 $6.38913
    • 1000 $5.84684
    • 10000 $5.51094
    		Buy Now

    Micron Technology Inc MT48LC16M16A2P-6A:G-TR

    IC DRAM 256MBIT PAR 54TSOP II
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MT48LC16M16A2P-6A:G-TR Reel 2,000 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $3.33248
    		Buy Now

    Micron Technology Inc MT48LC16M16A2B4-6A-IT:G

    IC DRAM 256MBIT PAR 54VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MT48LC16M16A2B4-6A-IT:G Bulk 1,984 1
    • 1 $8.14
    • 10 $7.221
    • 100 $6.4071
    • 1000 $5.89232
    • 10000 $5.55271
    		Buy Now

    Micron Technology Inc MT48LC16M16A2B4-7E-IT:G

    IC DRAM 256MBIT PAR 54VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey MT48LC16M16A2B4-7E-IT:G Tray 1,956 1
    • 1 $8.14
    • 10 $7.221
    • 100 $6.48188
    • 1000 $5.9317
    • 10000 $5.55271
    		Buy Now
    Find more 16M16 price and stock on Findchips.com

    16M16 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    KM29U128

    Abstract: No abstract text available
    Text: ADVANCE INFORMATION Part No. ISC-MPD-16M16F Irvine Sensors Corporation Microelectronics Products Division ¼ Gigabit FLASH Memory Stack 528-Byte Page Read Operation


    Original     		PDF ISC-MPD-16M16F 528-Byte KM29U128

    MT48H16M16LFFG

    Abstract: MT48V16M16LFFG
    Text: ADVANCE‡ 256Mb: x16 MOBILE SDRAM MOBILE SDRAM 16M16LFFG, 16M16LFFG– 4 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds FEATURES • Temperature Compensated Self Refresh TCSR


    Original     		PDF 256Mb: MT48V16M16LFFG, MT48H16M16LFFG­ 192-cycle 54-ball, MobileRamY26L MT48H16M16LFFG MT48V16M16LFFG

    57256

    Abstract: DDR200 DDR266B MT46V16M16 MT46V32M8 MT46V64M4
    Text: PRELIMINARY‡ 256Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V64M4 – 16 Meg x 4 x 4 banks MT46V32M8 – 8 Meg x 8 x 4 banks 16M16 – 4 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/datasheets/


    Original     		PDF 256Mb: MT46V64M4 MT46V32M8 MT46V16M16 256Mx4x8x16DDR 57256 DDR200 DDR266B MT46V16M16 MT46V32M8 MT46V64M4

    MT48LC16M16

    Abstract: 57256 A11 MARKING CODE MT48LC16M16A2 MT48LC32M8A2 MT48LC64M4A2 PC133 registered reference design mt48lc16m16a2fg-7e
    Text: 256Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC64M4A2 – 16 Meg x 4 x 4 banks MT48LC32M8A2 – 8 Meg x 8 x 4 banks 16M16A2 – 4 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES • PC66-, PC100-, and PC133-compliant


    Original     		PDF 256Mb: MT48LC64M4A2 MT48LC32M8A2 MT48LC16M16A2 PC66-, PC100-, PC133-compliant 192-cycle 60-ball, 8x16mm MT48LC16M16 57256 A11 MARKING CODE MT48LC16M16A2 MT48LC32M8A2 MT48LC64M4A2 PC133 registered reference design mt48lc16m16a2fg-7e

    CK1519

    Abstract: No abstract text available
    Text: 256Mb: x8, x16 Automotive DDR SDRAM Features Automotive DDR SDRAM MT46V32M8 – 8 Meg x 8 x 4 banks 16M16 – 4 Meg x 16 x 4 banks Features Options • VDD = 2.5V ±0.2V, VDDQ = 2.5V ±0.2V VDD = 2.6V ±0.1V, VDDQ = 2.6V ±0.1V DDR400 1 • Bidirectional data strobe (DQS) transmitted/


    Original     		PDF 256Mb: MT46V32M8 MT46V16M16 DDR400 write006, 09005aef848ea6ef/Source: 09005aef845d3b9c x4x8x16 CK1519

    TSOP 54 PIN

    Abstract: MT48LC16M16LFTG
    Text: PRELIMINARY‡ 256Mb: x16 MOBILE SDRAM MOBILE SDRAM MT48LC16LFFG, 16M16LFBG, MT48V16MLFFG, 16M16LFBG, 16M16LFFG, 16M16LFBG 4 Meg x 16 x 4 banks For the latest data sheet revisions, please refer to the Micron Web site: www.micron.com/dramds


    Original     		PDF 256Mb: 192-cycle MT48LC16LFFG, MT48LC16M16LFBG, MT48V16MLFFG, MT48V16M16LFBG, MT48H16M16LFFG, MT48H16M16LFBG MobileRamY26L TSOP 54 PIN MT48LC16M16LFTG

    09005aef8091e6a8

    Abstract: No abstract text available
    Text: 256Mb: x4, x8, x16 SDRAM Features Synchronous DRAM MT48LC64M4A2 – 16 Meg x 4 x 4 banks MT48LC32M8A2 – 8 Meg x 8 x 4 banks 16M16A2 – 4 Meg x 16 x 4 banks For the latest data sheet, refer to Micron’s Web site: www.micron.com Features Options • PC100- and PC133-compliant


    Original     		PDF 256Mb: MT48LC64M4A2 MT48LC32M8A2 MT48LC16M16A2 PC100- PC133-compliant 192-cycle auto08-368-3900 09005aef8091e6d1/Source: 09005aef8091e6a8

    09005aef8091e6d1

    Abstract: PC133 registered reference design
    Text: 256Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC64M4A2 – 16 Meg x 4 x 4 banks MT48LC32M8A2 – 8 Meg x 8 x 4 banks 16M16A2 – 4 Meg x 16 x 4 banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive


    Original     		PDF 256Mb: MT48LC64M4A2 MT48LC32M8A2 MT48LC16M16A2 PC100- PC133-compliant 8192-cycle 09005aef8091e6d1 PC133 registered reference design

    PC133 registered reference design

    Abstract: No abstract text available
    Text: 256Mb: x4, x8, x16 SDRAM SYNCHRONOUS DRAM MT48LC64M4A2 – 16 Meg x 4 x 4 banks MT48LC32M8A2 – 8 Meg x 8 x 4 banks 16M16A2 – 4 Meg x 16 x 4 banks For the latest data sheet, please refer to the Micron Web site: www.micron.com/dramds FEATURES • PC66-, PC100-, and PC133-compliant


    Original     		PDF 256Mb: PC66-, PC100-, PC133-compliant 192-cycle MT48LC64M4A2 MT48LC32M8A2 MT48LC16M16A2 MT48LC64M4A2FB-75 MT48LC64M4A2FB-7E PC133 registered reference design

    mt46v16m16 rev

    Abstract: mt46v16m16 die MT46V16M16
    Text: PRELIMINARY‡ 256Mb: x8, x16 DDR 400 SDRAM Addendum DOUBLE DATA RATE DDR SDRAM MT46V32M8 – 8 MEG X 8 X 4 BANKS 16M16 – 4 MEG X 16 X 4 BANKS Features General Description • • • • • The DDR400 SDRAM is a high-speed CMOS, dynamic random-access memory that operates at a


    Original     		PDF 256Mb: DDR400B 09005aef80a6e50f 256Mbx8x16DDR400 mt46v16m16 rev mt46v16m16 die MT46V16M16

    Untitled

    Abstract: No abstract text available
    Text: 256Mb: x4, x8, x16 DDR SDRAM Features Double Data Rate DDR SDRAM MT46V64M4 – 16 Meg x 4 x 4 banks MT46V32M8 – 8 Meg x 8 x 4 banks 16M16 – 4 Meg x 16 x 4 banks For the most current data sheet, please refer to the Micron Web site: www.micron.com/datasheets


    Original     		PDF 256Mb: MT46V64M4 MT46V32M8 MT46V16M16 DDR400) 09005aef8076894f 256MBDDRx4x8x16

    MT48v32m16

    Abstract: No abstract text available
    Text: PRELIMINARY‡ 256Mb and 512Mb: x16 TwinDie MOBILE SDRAM SYNCHRONOUS DRAM MT48LC32M16S2 16M16T2 16M16B2 Features • • • • • • • • • • • • • 16M16B2 MT48H32M16S2 16M16T2 16M16B2 1 2 3 A VSS DQ15 B DQ14 C 4


    Original     		PDF 256Mb 512Mb: 192-cycle MT48LC32M16S2 MT48LC16M16T2 MT48LC16M16B2 MT48V32M16S2 MT48H32M16S2 MT48V16M16T2 MT48H1a MT48v32m16

    Untitled

    Abstract: No abstract text available
    Text: 256Mb: x4, x8, x16 DDR SDRAM DOUBLE DATA RATE DDR SDRAM MT46V64M4 – 16 MEG x 4 x 4 BANKS MT46V32M8 – 8 MEG x 8 x 4 BANKS 16M16 – 4 MEG x 16 x 4 BANKS For the latest data sheet revisions, please refer to the Micronâ Web site: www.micron.com/datasheets


    Original     		PDF 256Mb: DDR400) 09005aef8076894f 256MBDDRx4x8x16

    Untitled

    Abstract: No abstract text available
    Text: 256Mb: x4, x8, x16 DDR2 SDRAM DDR2 SDRAM MT47H64M4 – 16 MEG X 4 X 4 MT47H32M8 – 8 MEG X 8 X 4 16M16 – 4 MEG X 16 X 4 For the latest data sheet, please refer to the Micron Web site: http://www.micron.com/products/dram/ddr2sdram/ Features • •


    Original     		PDF 256Mb: 18-compatible) 192-cycle MT47H64M4 MT47H32M8 MT47H16M16 09005aef80b12a05

    TOP SIDE MARKING OF MICRON

    Abstract: 84 FBGA 84-PIN MT6V16M16F2-3C MT6V16M16F2-3M MT6V16M18F2-3M RDRAM FBGA 84 MICRON fBGA package code
    Text: ADVANCE 256Mb/288Mb: 16 MEG x 16/18 RDRAM RAMBUS DRAM 16M16 - 512K x 16 x 32 banks MT6V16M18 - 512K x 18 x 32 banks For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/datasheet.html FEATURES 84-PIN FBGA TOP VIEW


    Original     		PDF 256Mb/288Mb: MT6V16M16 MT6V16M18 84-PIN 18-bit) 256MRDRAM TOP SIDE MARKING OF MICRON 84 FBGA MT6V16M16F2-3C MT6V16M16F2-3M MT6V16M18F2-3M RDRAM FBGA 84 MICRON fBGA package code

    Untitled

    Abstract: No abstract text available
    Text: 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile SDRAM Features Mobile Low-Power SDR SDRAM 16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks Features Options Marking • VDD/VDDQ: 1.8V/1.8V • Addressing – Standard addressing option • Configuration


    Original     		PDF 256Mb: MT48H16M16LF MT48H8M32LF 09005aef834c13d2

    Untitled

    Abstract: No abstract text available
    Text: 256Mb: x4, x8, x16 DDR2 SDRAM DDR2 SDRAM SAA64M4.– 16 Meg x 4 x 4 SAA32M8.– 8 Meg x 8 x 4 16M16.– 4 Meg x 16 x 4 For the latest data sheet, please refer to the SpecTek Web site: http://www.spectek.com Features • • • • • •


    Original     		PDF 256Mb: SAA64M4. SAA32M8. SAA16M16. 192-cycle

    Untitled

    Abstract: No abstract text available
    Text: 256Mb: x4, x8, x16 DDR2 SDRAM DDR2 SDRAM SAA64M4.– 16 Meg x 4 x 4 SAA32M8.– 8 Meg x 8 x 4 16M16.– 4 Meg x 16 x 4 For the latest data sheet, please refer to the SpecTek Web site: http://www.spectek.com Features • • • • • •


    Original     		PDF 256Mb: SAA64M4. SAA32M8. SAA16M16. 18-compatible) 09005aef81548c1c/Source: 09005aef819e80c5

    nanya 8gb DDR3

    Abstract: nanya 4gb DDR3 SODIMM DDR3 DIMM 16H16 DDR3 rDIMM SODIMM ddr2 8gb TSOPII inphi PC3-12800 SSTL-15
    Text: NANYA Module Part Numbering Guide NT 4GT T 64 U 8 H NANYA Technology Module Density Product Family T=DDR2 SDRAM Data Width 64=x64 U N AC Speed 256=256MB 512=512MB 1G=1GB 2G=2GB 4G=4GB 8G=8GB 16T=16GB Stacking 32T=32GB (Stacking) D=DDR SDRAM C=DDR3 SDRAM


    Original     		PDF 256MB 512MB SSTL-18 SSTL-15 SSTL-13 PC2-3200-3-3-3 PC2-4200-4-4-4 PC2-5300-5-5-5 PC2-6400-5-5-5 PC2-6400-6-6-6 nanya 8gb DDR3 nanya 4gb DDR3 SODIMM DDR3 DIMM 16H16 DDR3 rDIMM SODIMM ddr2 8gb TSOPII inphi PC3-12800 SSTL-15

    0.1U_0402_16V4Z

    Abstract: mda48 aos3401 BLM18PG121SN1D Compal Electronics M54-p r2561 BSS84S compal efl50 ls
    Text: 5 4 3 2 1 Digitally signed by fdsf DN: cn=fdsf, o=fsdfsd, ou=ffsdf, email=fdfsd@fsdff, c=US Date: 2010.02.15 18:47:35 +07'00' D C D Mini EFL50 ATI VGA/B M52-P C www.kythuatvitinh.com Revision 1.0 B B A A Compal Secret Data Security Classification Issued Date


    Original     		PDF EFL50) M52-P EFL50 LS-2766P 0.1U_0402_16V4Z mda48 aos3401 BLM18PG121SN1D Compal Electronics M54-p r2561 BSS84S compal efl50 ls

    88396

    Abstract: r2561 AOS3401 BLM15AG102SN1D AOS340 BLM18PG121SN1D Compal Electronics M54-p CHB2012U121 Compal ls- vga
    Text: 5 4 3 2 1 D C D Mini EFL50 ATI VGA/B M52-P C Revision 1.0 B B A A Compal Secret Data Security Classification Issued Date 2005/12/22 Deciphered Date 2006/12/22 THIS SHEET OF ENGINEERING DRAWING IS THE PROPRIETARY PROPERTY OF COMPAL ELECTRONICS, INC. AND CONTAINS CONFIDENTIAL


    Original     		PDF EFL50) M52-P EFL50 SA00000JW00 EFL50 LS-2766P 88396 r2561 AOS3401 BLM15AG102SN1D AOS340 BLM18PG121SN1D Compal Electronics M54-p CHB2012U121 Compal ls- vga

    mt48h8m32lfb5-75lit

    Abstract: 256Mb MT48 MT48H16M16LF MT48H8M32LF mt48h8m32lfb5 rev g
    Text: 256Mb: x16, x32 Mobile SDRAM Features Mobile SDRAM 16M16LF – 4 Meg x 16 x 4 banks MT48H8M32LF – 2 Meg x 32 x 4 banks Features Table 1: • Fully synchronous; all signals registered on positive edge of system clock • VDD/VDDQ = 1.70–1.95V • Internal, pipelined operation; column address can


    Original     		PDF 256Mb: MT48H16M16LF MT48H8M32LF 09005aef8219eeeb/Source: 09005aef8219eedd mt48h8m32lfb5-75lit 256Mb MT48 MT48H16M16LF MT48H8M32LF mt48h8m32lfb5 rev g

    Untitled

    Abstract: No abstract text available
    Text: 256Mb: x4, x8, x16 SDRAM Features SDR SDRAM MT48LC64M4A2 – 16 Meg x 4 x 4 banks MT48LC32M8A2 – 8 Meg x 8 x 4 banks 16M16A2 – 4 Meg x 16 x 4 banks Features Options • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive


    Original     		PDF 256Mb: MT48LC64M4A2 MT48LC32M8A2 MT48LC16M16A2 PC100- PC133-compliant 8192-cycle 09005aef8091e6d1

    Lpddr2 Idd7

    Abstract: 216-ball LPDDR2 NT6SM16M32 NT6SM16M32AK-S1
    Text: 512Mb LPSDR SDRAM NT6SM16M32AK Feature  Options Fully synchronous; all signals registered on positive edge of Marking  VDD /VDDQ system clock -1.8V/1.8V  M Internal, pipelined operation; column address can be changed  Configuration every clock cycle


    Original     		PDF 512Mb NT6SM16M32AK -16Meg -90-ball x13mm) 16M32 Lpddr2 Idd7 216-ball LPDDR2 NT6SM16M32 NT6SM16M32AK-S1