WTC2303
Abstract: No abstract text available
Text: WTC2303 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -1.9 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS ON R DS(ON) <240mΩ@V GS =-10V *Rugged and Reliable *Simple Drive Requirement
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WTC2303
OT-23
OT-23
16-May-05
WTC2303
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PDF
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Si4360DY
Abstract: si4360
Text: SPICE Device Model Si4360DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si4360DY
S-50836Rev.
16-May-05
si4360
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PDF
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PQFP208
Abstract: AT91C140 PA11 PA12 PA19 ARM processor data flow
Text: Features • ARM7TDMI ARM® Thumb® Processor Core – In-Circuit Emulator, 36 MHz Operation • Ethernet Bridge • • • • • • • • • • – Dual Ethernet 10/100 Mbps MAC Interface – 16-Kbyte Frame Buffer 1 K-Byte Boot ROM, Embedding a Boot Program
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Original
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16-Kbyte
16-bit
208-lead
6069CS
15-Sep-05
PQFP208
AT91C140
PA11
PA12
PA19
ARM processor data flow
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PDF
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Untitled
Abstract: No abstract text available
Text: WTC2307 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -4.0 AMPERS * “G” Lead Pb -Free DRAIN SOUCE VOLTAGE -16 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS(ON) R DS(ON) <60m Ω@V GS=-4.5V *Rugged and Reliable
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Original
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WTC2307
OT-23
OT-23
Unit00
16-May-05
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PDF
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Si4336DY
Abstract: No abstract text available
Text: SPICE Device Model Si4336DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si4336DY
18-Jul-08
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PDF
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Si4346DY
Abstract: No abstract text available
Text: SPICE Device Model Si4346DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si4346DY
18-Jul-08
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PDF
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Si3499DV
Abstract: No abstract text available
Text: SPICE Device Model Si3499DV Vishay Siliconix P-Channel 8-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si3499DV
18-Jul-08
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PDF
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Si3909DV
Abstract: No abstract text available
Text: SPICE Device Model Si3909DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si3909DV
18-Jul-08
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PDF
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72711
Abstract: Si3469DV
Text: SPICE Device Model Si3469DV Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si3469DV
18-Jul-08
72711
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PDF
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Si4368DY
Abstract: No abstract text available
Text: SPICE Device Model Si4368DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si4368DY
18-Jul-08
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PDF
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Si4348DY
Abstract: No abstract text available
Text: SPICE Device Model Si4348DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si4348DY
18-Jul-08
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PDF
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mv silicon mp3 player
Abstract: 100-W Si91842 Si91842DT-12-T1 Si91842DT-18-T1 Si91842DT-25-T1 Si91842DT-26-T1 Si91842DT-285-T1 Si91842DT-28-T1 Si91842DT-29-T1
Text: Si91842 Vishay Siliconix 150-mA Low-Noise LDO Regulator With Error Flag and Discharge Option FEATURES D Output—Auto-Discharge In Shutdown Mode D Fixed 1.2, 1.8, 2.5, 2.6, 2.8, 2.85, 3.0, 3.3, 5.0-V Output Voltage Options D Thin SOT23-5 Package D Ultra Low Dropout—130 mV at 150-mA Load
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Si91842
150-mA
OT23-5
Dropout--130
Noise--75
10-Hz
100-kHz
110-mA
mv silicon mp3 player
100-W
Si91842DT-12-T1
Si91842DT-18-T1
Si91842DT-25-T1
Si91842DT-26-T1
Si91842DT-285-T1
Si91842DT-28-T1
Si91842DT-29-T1
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PDF
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Si3948DV
Abstract: No abstract text available
Text: SPICE Device Model Si3948DV Vishay Siliconix Dual N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si3948DV
18-Jul-08
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PDF
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Si4378DY
Abstract: No abstract text available
Text: SPICE Device Model Si4378DY Vishay Siliconix N-Channel 20-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si4378DY
18-Jul-08
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PDF
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Si4362DY
Abstract: No abstract text available
Text: SPICE Device Model Si4362DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si4362DY
18-Jul-08
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PDF
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atmel 638
Abstract: PQFP208 drawing Atmel AT91C140 AT91C140 PQFP208 PA25 PA26 PA20 PA21 tSMC14
Text: Features • ARM7TDMI ARM® Thumb® Processor Core – In-Circuit Emulator, 36 MHz Operation • Ethernet Bridge • • • • • • • • • • – Dual Ethernet 10/100 Mbps MAC Interface – 16-Kbyte Frame Buffer 1 Kbyte Boot ROM, Embedding a Boot Program
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Original
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16-Kbyte
32-bit
16-bit
208-lead
6102B
16-May-05
atmel 638
PQFP208 drawing
Atmel AT91C140
AT91C140
PQFP208
PA25
PA26
PA20
PA21
tSMC14
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PDF
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Untitled
Abstract: No abstract text available
Text: SiP11203, SiP11204 Vishay Siliconix Synchronous Rectifier Driver with Power Up/Down Control, Output OVP, Error Amplifier and Precision Reference DESCRIPTION The SiP11203/SiP11204 provide the secondary side error amplifier, reference voltage and synchronous
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SiP11203
SiP11204
SiP11203/SiP11204
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Product is End of Life 3/2014 SiP11205 Vishay Siliconix Feed-Forward Controller with Primary MOSFET Drivers for Intermediate Bus Converters DESCRIPTION FEATURES SiP11205 is a feed-forward controller for the primary side of a half-bridge intermediate bus converter IBC . It is ideally
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SiP11205
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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PDF
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GPP3A
Abstract: 202E
Text: GPP3A THRU GPP3M GLASS PASSIVATED JUNCTION RECTIFIER VOLTAGE: 50 TO 1000V CURRENT: 3.0A FEATURE DO - 201AD Molded case feature for auto insertion High current capability Low leakage current High surge capability High temperature soldering guaranteed 250°C /10sec/0.375" lead length at 5 lbs tension
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Original
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201AD
/10sec/0
UL-94
16-May-05
GPP3A
202E
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PDF
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SI4346DY
Abstract: a26-32
Text: SPICE Device Model Si4346DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Original
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Si4346DY
S-50836Rev.
16-May-05
a26-32
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PDF
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Untitled
Abstract: No abstract text available
Text: Si9181 Vishay Siliconix Micropower 350-mA CMOS LDO Regulator With Error Flag/Power-On-Reset FEATURES Low 150-mV Dropout at 350-mA Load Guaranteed 350-mA Output Current 600-mA Peak Output Current Capability Uses Low ESR Ceramic Output Capacitor Fast Load and Line Transient Response
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Si9181
350-mA
150-mV
600-mA
100-mV
01-mF
S-50955--Rev.
16-May-05
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PDF
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Untitled
Abstract: No abstract text available
Text: Si9185 Vishay Siliconix Micropower 500-mA CMOS LDO Regulator With Error Flag/Power-On-Reset FEATURES D D D D D D D D D D Input Voltage 2 V to 6 V Low 150-mV Dropout at 500-mA Load Available Guaranteed 500-mA Output Current Uses Low ESR Ceramic Output Capacitor
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Original
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Si9185
500-mA
150-mV
100-mV
MLP33
S-50955--Rev.
16-May-05
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PDF
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Untitled
Abstract: No abstract text available
Text: SiP21102 Vishay Siliconix New Product 150-mA Low-Noise LDO Regulator With Error Flag and Discharge FEATURES D Ultra Low Dropout—130 mV at 150-mA Load D Low Noise—75 mV rms (10-Hz to 100-kHz Bandwidth) D Out−of−Regulation Error Flag (power good) D Shutdown Control
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Original
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SiP21102
150-mA
Dropout--130
Noise--75
10-Hz
100-kHz
110-mA
300-mA
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PDF
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Untitled
Abstract: No abstract text available
Text: WTC2303 P-Channel Enhancement Mode Power MOSFET DRAIN CURRENT 3 DRAIN -1.9 AMPERES DRAIN SOURCE VOLTAGE -30 VOLTAGE 1 GATE 2 Features: SOURCE 3 *Super High Dense Cell Design For Low R DS ON R DS(ON) <240mΩ@V GS =-10V *Rugged and Reliable *Simple Drive Requirement
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Original
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WTC2303
SC-59
SC-59
16-May-05
26-Nov-08
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PDF
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