Untitled
Abstract: No abstract text available
Text: SU532043574F6BP May 11, 2005 Ordering Information Part Numbers Description SM532043574F6BP 4Mx32 16MB , SDRAM, 100-pin DIMM, Unbuffered, Non-ECC, 4Mx16 Based, PC100, CL 2.0 & 3.0, 25.40mm. SG532043574F6BP 4Mx32 (16MB), SDRAM, 100-pin DIMM, Unbuffered, Non-ECC, 4Mx16 Based, PC100,
|
Original
|
SU532043574F6BP
SM532043574F6BP
SG532043574F6BP
4Mx32
100-pin
4Mx16
PC100,
|
PDF
|
EEPROM 16MB
Abstract: 100-pin dimm 1 Meg x32 DIMM 100-pin DIMM 100-pin 100-PIN DQ1572 16Mb SDRAM MICRON MICRON POWER RESISTOR 2W
Text: 16MB, 32MB, 64MB, 128MB x32 100-PIN SDRAM DIMM SYNCHRONOUS DRAM MODULE MT2LSDT432U – 16MB, MT4LSDT832UD – 32MB, MT4LSDT1632UD – 64MB, MT4LSDT3232UD – 128MB For the latest data sheet, please refer to the Micronâ Web site: www.micron.com/moduleds
|
Original
|
128MB
100-PIN
MT2LSDT432U
MT4LSDT832UD
MT4LSDT1632UD
MT4LSDT3232UD
100-pin,
EEPROM 16MB
100-pin dimm
1 Meg x32 DIMM 100-pin
DIMM 100-pin
DQ1572
16Mb SDRAM MICRON
MICRON POWER RESISTOR 2W
|
PDF
|
MT48LC8M16A2P
Abstract: No abstract text available
Text: 16MB x32, SR ; 32MB, 64MB, 128MB (x32, DR) 100-PIN SDRAM UDIMM SYNCHRONOUS DRAM MODULE MT2LSDT432U – 16MB MT4LSDT832UD – 32MB MT4LSDT1632UD – 64MB MT4LSDT3232UD – 128MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/modules
|
Original
|
128MB
100-PIN
100-pin,
PC133-compliant
096-cycle
128MB
192erature
09005aef80948ad4
32x32UDG
MT48LC8M16A2P
|
PDF
|
DS1270W
Abstract: No abstract text available
Text: Rev 0; 8/06 3.3V Single-Piece 16Mb Nonvolatile SRAM Features The DS2070W is a 16Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in
|
Original
|
DS2070W
256-ball
microA19
DS2070W
DS1270W
|
PDF
|
MT48LC8M16A2P
Abstract: 100-PIN 3CK10
Text: 16MB x32, SR ; 32MB, 64MB, 128MB (x32, DR) 100-PIN SDRAM UDIMM SYNCHRONOUS DRAM MODULE MT2LSDT432U – 16MB MT4LSDT832UD – 32MB MT4LSDT1632UD – 64MB MT4LSDT3232UD – 128MB For the latest data sheet, please refer to the Micron Web site: www.micron.com/products/modules
|
Original
|
128MB
100-PIN
MT2LSDT432U
MT4LSDT832UD
MT4LSDT1632UD
MT4LSDT3232UD
100-pin,
PC133-compliant
MT48LC8M16A2P
3CK10
|
PDF
|
DS1270W
Abstract: DS2070W-100 DS2070W
Text: Rev 0; 8/06 3.3V Single-Piece 16Mb Nonvolatile SRAM Features The DS2070W is a 16Mb reflowable nonvolatile NV SRAM, which consists of a static RAM (SRAM), an NV controller, and an internal rechargeable manganese lithium (ML) battery. These components are encased in
|
Original
|
DS2070W
256-ball
DS2070W
DS1270W
DS2070W-100
|
PDF
|
39vf3201
Abstract: 39vf1602 39vf1601 sst39vf1602 SST39VF160X S71223-05-000 SST39VF1601 SST39VF1601-70-4C-B3KE sst39vf1601-70-4c-eke SST39VF1602-70-4C-EKE
Text: 16 Mbit / 32 Mbit / x16 Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 SST39VF1602 / SST39VF3202 SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 1M x16: SST39VF1601/1602 2M x16: SST39VF3201/3202
|
Original
|
SST39VF1601
SST39VF3201
SST39VF1602
SST39VF3202
SST39VF160x
640x2
SST39VF1601/1602
SST39VF3201/3202
SST39VF1602/3202
SST39VF1ved
39vf3201
39vf1602
39vf1601
S71223-05-000
SST39VF1601-70-4C-B3KE
sst39vf1601-70-4c-eke
SST39VF1602-70-4C-EKE
|
PDF
|
39vf1601c
Abstract: 1602c 555H SST39VF1602C
Text: 16 Mbit x16 Multi-Purpose Flash Plus SST39VF1601C / SST39VF1602C SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories Preliminary Specification FEATURES: • Organized as 1M x16: SST39VF1601C/1602C • Single Voltage Read and Write Operations
|
Original
|
SST39VF1601C
SST39VF1602C
SST39VF160x
640x2
SST39VF1601C/1602C
48-tfbga-B3K-6x8-450mic-4
48-ball
S71380-02-000
39vf1601c
1602c
555H
SST39VF1602C
|
PDF
|
39vf3201
Abstract: 39vf1601 39vf1601 70-4c-eke 39VF3202 39vf1602 39vf160 39VF6401 xx029 S71223-04-000 SST39VF1601
Text: 16 Mbit / 32 Mbit / 64 Mbit x16 Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 / SST39VF6401 SST39VF1602 / SST39VF3202 / SST39VF6402 SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 1M x16: SST39VF1601/1602
|
Original
|
SST39VF1601
SST39VF3201
SST39VF6401
SST39VF1602
SST39VF3202
SST39VF6402
SST39VF160x
640x2
SST39VF1601/1602
SST39VF3201/3202
39vf3201
39vf1601
39vf1601 70-4c-eke
39VF3202
39vf1602
39vf160
39VF6401
xx029
S71223-04-000
|
PDF
|
multipurpose
Abstract: FE000H-FFFFFH sst39vf1602c
Text: 16 Mbit x16 Multi-Purpose Flash Plus SST39VF1601C / SST39VF1602C SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories Preliminary Specification FEATURES: • Organized as 1M x16: SST39VF1601C/1602C • Single Voltage Read and Write Operations
|
Original
|
SST39VF1601C
SST39VF1602C
SST39VF160x
640x2
SST39VF1601C/1602C
MO-210,
48-tfbga-B3K-6x8-450mic-4
48-ball
S71380-01-000
multipurpose
FE000H-FFFFFH
sst39vf1602c
|
PDF
|
39vf3201
Abstract: 39vf1601 39vf1602 39vf1601 70-4c-eke 39VF3202 sst39vf1602 SST39VF160X 39vf6401 SST39VF1601 SST39VF6401-70-4C-B1KE
Text: 16 Mbit / 32 Mbit / 64 Mbit x16 Multi-Purpose Flash Plus SST39VF1601 / SST39VF3201 / SST39VF6401 SST39VF1602 / SST39VF3202 / SST39VF6402 SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories Preliminary Specifications FEATURES: • Organized as 1M x16: SST39VF1601/1602
|
Original
|
SST39VF1601
SST39VF3201
SST39VF6401
SST39VF1602
SST39VF3202
SST39VF6402
SST39VF160x
640x2
SST39VF1601/1602
SST39VF3201/3202
39vf3201
39vf1601
39vf1602
39vf1601 70-4c-eke
39VF3202
39vf6401
SST39VF6401-70-4C-B1KE
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 16Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W160ET, M29W160EB Features • Common Flash interface – 64-bit security code • Low power consumption: Standby and automatic mode • 100,000 PROGRAM/ERASE cycles per block
|
Original
|
M29W160ET,
M29W160EB
64-bit
0020h
M29W160ET:
22C4h
M29W160EB:
2249h
48-pin
48-ball
|
PDF
|
F24-12
Abstract: No abstract text available
Text: 16 Mbit Concurrent SuperFlash SST36VF1601 SST36VF16012.7V 16Mb x16 Concurrent SuperFlash Data Sheet FEATURES: • Organized as 1M x16 • Dual Bank Architecture for Concurrent Read/Write Operation – 16 Mbit Bottom Sector Protection - SST36VF1601: 12 Mbit + 4 Mbit
|
Original
|
SST36VF1601
SST36VF16012
SST36VF1601:
48-tfbga-BK-8x10-300mic-13
MO-210,
48-BALL
S71142-07-000
F24-12
|
PDF
|
39VF1601C
Abstract: 39VF1602C 1602c 39vf160 SST39VF1601C-70-4C-EKE 39vf1601 sst39vf1602c 555H SST39VF1602C-70-4C-EKE sst39vf1601C
Text: 16 Mbit x16 Multi-Purpose Flash Plus SST39VF1601C / SST39VF1602C SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 1M x16: SST39VF1601C/1602C • Single Voltage Read and Write Operations – 2.7-3.6V
|
Original
|
SST39VF1601C
SST39VF1602C
SST39VF160x
640x2
SST39VF1601C/1602C
S71380-04-000
39VF1601C
39VF1602C
1602c
39vf160
SST39VF1601C-70-4C-EKE
39vf1601
sst39vf1602c
555H
SST39VF1602C-70-4C-EKE
|
PDF
|
|
|
SST39WF160x
Abstract: SST39WF1601-90-4C-B3K SST39WF1601-90-4I-B3KE SST39WF1601 SST39WF1602
Text: 16 Mbit x16 Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 SST39WF160x2.7V 16Mb (x16) MPF+ memories Preliminary Specifications FEATURES: • Organized as 1M x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (Typical)
|
Original
|
SST39WF1601
SST39WF1602
SST39WF160x2
SST39WF1601
48-wfbga-MBQ-5x6-32mic-0
48-ball
S71297-01-000
SST39WF160x
SST39WF1601-90-4C-B3K
SST39WF1601-90-4I-B3KE
SST39WF1602
|
PDF
|
a103 636 transistor
Abstract: BF274 SST39WF1601-90-4C-MBQE SST39WF1601 SST39WF1602
Text: 16 Mbit x16 Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 SST39WF160x2.7V 16Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 1M x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (Typical)
|
Original
|
SST39WF1601
SST39WF1602
SST39WF160x2
SST39WF1601
S71297-02-000
a103 636 transistor
BF274
SST39WF1601-90-4C-MBQE
SST39WF1602
|
PDF
|
SST39WF1601
Abstract: SST39WF1602
Text: 16 Mbit x16 Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 SST39WF160x2.7V 16Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 1M x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (Typical)
|
Original
|
SST39WF1601
SST39WF1602
SST39WF160x2
SST39WF1601
000010H
000017H
000008H
00000FH
SST39WF1601-70-4C-Y1QE,
SST39WF1602
|
PDF
|
T1129
Abstract: 1j63
Text: MSC23S4721E-8BS18 98.07.17 Semiconductor MSC23S4721E-8BS18 4,194,304 Word x 72 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK):_ DESCRIPTION The Oki MSC23S4721E-8BS18 is a fully decoded, 4,194,304 x 72bit synchronous dynamic random access memory composed of eighteen 16Mb DRAMs (2Mx8) in TSOP
|
OCR Scan
|
MSC23S4721E-8BS18
MSC23S4721E-8BS18
72bit
168-pin
72-Bit
T1129
1j63
|
PDF
|
P106H
Abstract: SST39VF1681 SST39VF1682 SST39VF168x
Text: 16 Mbit x8 Multi-Purpose Flash Plus SST39VF1681 / SST39VF1682 SST39VF1681 / 16822.7V 16Mb (x8) MPF+ memories Preliminary Specifications FEATURES: • Organized as 2M x8 • Single Voltage Read and Write Operations – 2.7-3.6V • Superior Reliability – Endurance: 100,000 Cycles (Typical)
|
Original
|
SST39VF1681
SST39VF1682
SST39VF1681
48-tfbga-B3K-6x8-450mic-4
48-BALL
S71243-03-000
P106H
SST39VF1682
SST39VF168x
|
PDF
|
39vf1601c
Abstract: 39vf1602 39vf1601 jedec package MO-220 SST39VF1601C-70-4C-EKE sst39vf1602c 555H 39VF1602C
Text: 16 Mbit x16 Multi-Purpose Flash Plus SST39VF1601C / SST39VF1602C SST39VF160x / 320x / 640x2.7V 16Mb / 32Mb / 64Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 1M x16: SST39VF1601C/1602C • Single Voltage Read and Write Operations – 2.7-3.6V
|
Original
|
SST39VF1601C
SST39VF1602C
SST39VF160x
640x2
SST39VF1601C/1602C
S71380-03-000
39vf1601c
39vf1602
39vf1601
jedec package MO-220
SST39VF1601C-70-4C-EKE
sst39vf1602c
555H
39VF1602C
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 16 Mbit Concurrent SuperFlash SST36VF1601 SST36VF16012.7V 16Mb x16 Concurrent SuperFlash Data Sheet FEATURES: • Organized as 1M x16 • Dual Bank Architecture for Concurrent Read/Write Operation – 16 Mbit Bottom Sector Protection - SST36VF1601: 12 Mbit + 4 Mbit
|
Original
|
SST36VF1601
SST36VF16012
SST36VF1601:
48-tfbga-BK-8x10-300mic-13
MO-210,
48-BALL
S71142-06-000
|
PDF
|
SST39WF1601
Abstract: SST39WF1602
Text: 16 Mbit x16 Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 SST39WF160x2.7V 16Mb (x16) MPF+ memories EOL Data Sheet FEATURES: • Organized as 1M x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (Typical)
|
Original
|
SST39WF1601
SST39WF1602
SST39WF160x2
SST39WF1601
MO-225,
48-wfbga-MBQ-5x6-32mic-0
48-ball
S71297
-00-EOL
SST39WF1602
|
PDF
|
BF274
Abstract: No abstract text available
Text: 16 Mbit x16 Multi-Purpose Flash Plus SST39WF1601 / SST39WF1602 SST39WF160x2.7V 16Mb (x16) MPF+ memories Data Sheet FEATURES: • Organized as 1M x16 • Single Voltage Read and Write Operations – 1.65-1.95V • Superior Reliability – Endurance: 100,000 Cycles (Typical)
|
Original
|
SST39WF1601
SST39WF1602
SST39WF160x2
SST39WF1601
S71297-02-000
BF274
|
PDF
|
MSC23S4641E-8BS16
Abstract: No abstract text available
Text: MSC23S4641E-8BS16 98.06.22 Semiconductor MSC23S4641E-8BS16 4,194,304 Word x 64 Bit SYNCHRONOUS DYNAMIC RAM MODULE (2BANK): DESCRIPTION The Oki MSC23S4641E-8BS16 is a fully decoded, 4,194,304 x 64bit synchronous dynamic random access memory composed of sixteen 16Mb DRAMs(2Mx8) in TSOP
|
Original
|
MSC23S4641E-8BS16
MSC23S4641E-8BS16
64bit
168-pin
64-Bit
|
PDF
|
