BPV10NF
Abstract: 161401
Text: BPV10NF Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions in mm : Ø 5 • Leads with stand-off • Radiant sensitive area (in mm2): 0.78 • High radiant sensitivity • Daylight blocking filter matched with 870 nm to
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BPV10NF
BPV10NF
2002/95/EC
2002/96/EC
11-Mar-11
161401
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16SEP
Abstract: transformer rm8 20X16
Text: FW30, FW100 Vishay Aztronic Transformer and Inductor for Military and Aeronautic Forward Power Supplies FEATURES • Design for aeronautics and military power supply applications • Frequency: 100 to 200 kHz • Power: 30 to 100 W • Efficiency > 95 % • UL94V0 material
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FW100
UL94V0
18-Jul-08
16SEP
transformer rm8
20X16
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DDR3 SPD
Abstract: marking code onsemi Diode B14 1E70 JC42 MO-229 marking b14 sot
Text: CAT6095 Digital Output Temperature Sensor FEATURES DESCRIPTION JEDEC JC42.4 Compliant Temperature Sensor Temperature Range: - 40°C to 125°C Supply Range: 3.3 V ± 10% I2C /SMBus Interface Schmitt Triggers and Noise Suppression Filters on SCL and SDA Inputs
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CAT6095
CAT6095
MD-1124
DDR3 SPD
marking code onsemi Diode B14
1E70
JC42
MO-229
marking b14 sot
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Untitled
Abstract: No abstract text available
Text: TSHF4410 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : ∅ 3 • Peak wavelength: λp = 890 nm • High reliability • High radiant power
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TSHF4410
2002/95/EC
2002/96/EC
TSHF4410
11-Mar-11
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TSFF5510
Abstract: No abstract text available
Text: TSFF5510 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 870 nm, GaAlAs Double Hetero FEATURES • • • • • • • • • • • • • • 21061 DESCRIPTION TSFF5510 is an infrared, 870 nm emitting diode in GaAlAs double hetero DH technology with high radiant power and
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TSFF5510
TSFF5510
18-Jul-08
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TEFT4300
Abstract: 8239 Silicon NPN Phototransistor TSAL4400 TSUS4300 npn phototransistor 86-36-2
Text: TEFT4300 Vishay Semiconductors Silicon NPN Phototransistor, RoHS Compliant FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • High radiant sensitivity • Daylight blocking filter matched with 940 nm emitters • Fast response times
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TEFT4300
TSUS4300
TSAL4400
2002/95/EC
2002/96/EC
TEFT4300
18-Jul-08
8239
Silicon NPN Phototransistor
TSAL4400
npn phototransistor
86-36-2
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phototriac
Abstract: optocoupler drive relay VO3526 snubber circuit
Text: VISHAY SEMICONDUCTORS Optocouplers and Solid-State Relays Application Note VO3526 Power Phototriac Design Considerations The VO3526 power phototriac also termed a solid-state relay in the industrial and process control industries is designed to be used as a solid-state AC switch for loads of
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VO3526
16-Sep-08
phototriac
optocoupler drive relay
snubber circuit
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CVCO55CC-2269-2580
Abstract: No abstract text available
Text: M ICROWAVE A Division of Crystek Corporation PERFORMANCE SPECIFICATION MIN TYP Lower Frequency: Upper Frequency: MAX UNITS 2269 MHz 16 VDC 2580 MHz Tuning Voltage: 0.1 Supply Voltage: 7.6 8.0 8.4 VDC Output Power: +3.0 +5.0 +7.0 dBm 25 35 mA Harmonic Suppression 2 Harmonic :
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10kHz
100kHz
CVCO55CC
CVCO55CC-2269-2580
16-Sep-08
CVCO55CC-2269-2580
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Untitled
Abstract: No abstract text available
Text: APPLICATION NOTE: AN-83-001 TITLE: Mechanical Switch Extended Life Test Report Reference: RF Mechanical Switch, RF Relay Switch Report Date: August, 21.2009 Report Issued by: Ted Heil Report Reviewed by: Harvey Kaylie Report Status: Initial Release File Name
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AN-83-001
13\life
AN-83-001
M142736
AN83001
documeN-83-001
10038NA
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Untitled
Abstract: No abstract text available
Text: TEMD5120X01 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant, Released for Lead Pb -free Reflow Soldering, AEC-Q101 Released FEATURES • Package type: surface mount • Package form: top view • Dimensions (L x W x H in mm): 5 x 4.24 x 1.12
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TEMD5120X01
AEC-Q101
J-STD-020
2002/95/EC
2002/96/EC
TEMD5120X01
18-Jul-08
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TEMD5010X01
Abstract: No abstract text available
Text: TEMD5010X01 Vishay Semiconductors Silicon PIN Photodiode, RoHS Compliant, Released for Lead Pb -free Reflow Soldering, AEC-Q101 Released FEATURES • Package type: surface mount • Package form: top view • Dimensions (L x W x H in mm): 5 x 4.24 x 1.12
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TEMD5010X01
AEC-Q101
J-STD-020
2002/95/EC
2002/96/EC
TEMD5010X01
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: TSAL4400 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : ∅ 3 • Peak wavelength: λp = 940 nm • High reliability • High radiant power
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TSAL4400
TSAL4400
TEFT4300
2002/95/EC
2002/96/EC
11-Mar-11
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PDF
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HFA30PB120
Abstract: IRFP250
Text: HFA30PB120PbF Vishay High Power Products HEXFRED Ultrafast Soft Recovery Diode, 30 A FEATURES • • • • • • • • Base common cathode Pb-free Available RoHS* COMPLIANT BENEFITS • • • • • 2 1 Cathode Ultrafast recovery Ultrasoft recovery
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HFA30PB120PbF
HFA30PB120
18-Jul-08
IRFP250
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16tts12 SCR device
Abstract: 16TTS12 equivalent of 16tts12 scr 16tts12 16TTS 16TTS08
Text: 16TTS. High Voltage Series Vishay High Power Products Phase Control SCR, 10 A DESCRIPTION/FEATURES 2 A TO-220AB The 16TTS. High Voltage Series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. The glass
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16TTS.
O-220AB
18-Jul-08
16tts12 SCR device
16TTS12
equivalent of 16tts12
scr 16tts12
16TTS
16TTS08
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Leader 8020 schematics Oscilloscope
Abstract: smd diode schottky code marking GW sn 16848 APPLICATION NOTE BpW77 IEC-60050 BPw104 PHOTO TRANSISTOR BPW77 BPW34 PHOTODIODE THEORY Marking Code SMD databook 2010 bpw104s
Text: VISHAY INTERTECHNO L O G Y , INC . INTERACTIVE data book infrared emitters and detectors vishay semiconductors vse-db0103-0810 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0103-0810
Leader 8020 schematics Oscilloscope
smd diode schottky code marking GW
sn 16848
APPLICATION NOTE BpW77
IEC-60050
BPw104
PHOTO TRANSISTOR BPW77
BPW34 PHOTODIODE THEORY
Marking Code SMD databook 2010
bpw104s
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TSHF4410
Abstract: No abstract text available
Text: TSHF4410 Vishay Semiconductors High Speed Infrared Emitting Diode, RoHS Compliant, 890 nm, GaAlAs Double Hetero FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : ∅ 3 • Peak wavelength: λp = 890 nm • High reliability • High radiant power
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TSHF4410
2002/95/EC
2002/96/EC
TSHF4410
18-Jul-08
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PDF
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TSHA4401
Abstract: TSHA440 TSHA4400
Text: TSHA4400, TSHA4401 Vishay Semiconductors Infrared Emitting Diode, RoHS Compliant, 875 nm, GaAlAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : Ø 3 • Peak wavelength: λp = 875 nm • High reliability • Angle of half intensity: ϕ = ± 20°
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TSHA4400,
TSHA4401
2002/95/EC
2002/96/EC
TSHA440.
18-Jul-08
TSHA4401
TSHA440
TSHA4400
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PDF
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TSAL4400
Abstract: APPLICATION CIRCUIT OF TSAL4400 Application NOTES TSAL4400 TEFT4300 high power infrared led
Text: TSAL4400 Vishay Semiconductors High Power Infrared Emitting Diode, RoHS Compliant, 940 nm, GaAlAs/GaAs FEATURES • Package type: leaded • Package form: T-1 • Dimensions in mm : ∅ 3 • Peak wavelength: λp = 940 nm • High reliability • High radiant power
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TSAL4400
TEFT4300
TSAL4400
2002/95/EC
2002/96/EC
18-Jul-08
APPLICATION CIRCUIT OF TSAL4400
Application NOTES TSAL4400
TEFT4300
high power infrared led
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Untitled
Abstract: No abstract text available
Text: 3 4 T H IS D R AW IN G IS U N P U B L IS H E D . C O PYR IG H T 2 R E LE A S E D FO R P U B LIC A TIO N BY TYCO ELEC TR O N IC S CO RPO RATIO N. LOC R EVISIO N S D IS T Hr 00 A LL INTERNATIONAL RIGHTS R ESERVED. D E S C R IP T IO N REVECO—0 8 —0 2 2 4 5 5
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16SEP08
20MAR97
12/CARTON
50/CARTON
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 1471-9 1 /0 8 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL INTERNATIONAL RIGHTS RESERVED. LOC DIST HM 00 R E V IS IO N S p LTR D E 1 . DESCRIPTION REDWN & ADD: 6 /1 ; NPR 97- 0 5 3 & EC 0801-0009-97
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24MAR97
16SEP08
24MAR97
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PDF
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T7NS5D4
Abstract: T7NS5D 700514 16-SEP-08
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT LOC RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. DIST R E V IS IO N S HB P DESCRIPTION LTR REDRAW THE DRAWING A ’D’ DATE ECN 16-SEP-08 DWN APVD z .z BH.Y PART A in o +1 S DH ÊÊ MC K
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16-SEP-08
UL94V-0
T7NS5D4
T7NS5D
700514
16-SEP-08
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PDF
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION DIST LOC BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. COPYRIGHT HH R E V IS IO N S P LTR DESCRIPTION A R ELEA S E A1 AD D NEW T Y P E © © © © DATE ECN DWN APVD 16-SEP-08 z ,z BH,Y EC O —08—029446
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16-SEP-08
14-NOV-08
T73S5D15-48
T73S5D15â
T73S5D15-09
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700514
Abstract: T7CS5D-12 2-1393190-2 T7CV5D-05 4-1393190-6 T7CV5D-12 t7cs5d-12 T7CS5D-24 T7CV5D-05 D-12 T7CV5D-24 T7CV5D-09 4-1393190-9
Text: 3 4 2 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. COPYRIGHT DIST LOC uu MM R E V IS IO N S P V D DESCRIPTION LTR A A1 R ELEA SE ADD NEW TYPE AND MODIFY MISTAKE 4. DRILLING DIAGRAM B0TT0M VIEW
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14-NOV-08
UL94V-0
700514
T7CS5D-12 2-1393190-2
T7CV5D-05 4-1393190-6
T7CV5D-12
t7cs5d-12
T7CS5D-24
T7CV5D-05
D-12
T7CV5D-24
T7CV5D-09 4-1393190-9
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SUS304-WPB
Abstract: TYCO PCLH-206A1S PCLH-206A1S SUS304-WPB MATERIAL 206a1s 203A1 SUS304WPB
Text: COPYRIGHT 2 3 4 THIS DRAWING IS UNPUBLISHED. LOC RELEASED FOR PUBUCATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. DIST HB P 107-79058 107-79058 107-79058 107-79058 107-79058 107-79058 107-79058 PACKING SPEC 7-1440007-5 5-1461068-9 5-1461068-8
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50V-res.
EH302Ã
PCLH-208A1S
220/240V-
UL94HB
SUS304-WPB
TYCO PCLH-206A1S
PCLH-206A1S
SUS304-WPB MATERIAL
206a1s
203A1
SUS304WPB
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