FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178
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GP-20)
FSQ510 Equivalent
BTA12 6008
bta16 6008
ZIGBEE interface with AVR ATmega16
Precision triac control thermostat
thyristor t 558 f eupec
gw 5819 diode
transistor a564
A564 transistor
BSM25GP120 b2
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quicklogic an20
Abstract: 901M AA13 LVCMOS25 MIPS32 PC-100 QL901M R4000 Building An AMBA AHB Compliant Memory Controller
Text: QL901M QuickMIPS Data Sheet •••••• QuickMIPS Embedded Standard Product ESP Family Device Highlights Two Ethernet Controllers CPU Core • Two 10/100 MACs • 32-bit MIPS 4Kc processor runs up to 133 MHz (173 Dhrystone MIPS) • 1.3 Dhrystone MIPS per MHz
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QL901M
32-bit
PC-100
quicklogic an20
901M
AA13
LVCMOS25
MIPS32
R4000
Building An AMBA AHB Compliant Memory Controller
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Untitled
Abstract: No abstract text available
Text: QL901M QuickMIPS Data Sheet •••••• QuickMIPS Embedded Standard Product ESP Family Device Highlights Two Ethernet Controllers CPU Core • Two 10/100 MACs • 32-bit MIPS 4Kc processor runs up to 133 MHz (173 Dhrystone MIPS) • 1.3 Dhrystone MIPS per MHz
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QL901M
32-bit
16-bit
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AA13
Abstract: LVCMOS25 MIPS32 PC-100 QL901M R4000 7180-X
Text: QL901M QuickMIPS Data Sheet •••••• QuickMIPS Embedded Standard Product ESP Family Device Highlights Two Ethernet Controllers CPU Core • Two 10/100 MACs • 32-bit MIPS 4Kc processor runs up to 133 MHz (173 Dhrystone MIPS) • 1.3 Dhrystone MIPS per MHz
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QL901M
32-bit
PC-100
AA13
LVCMOS25
MIPS32
R4000
7180-X
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PDF
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STM32F21xxx reference manual
Abstract: STM32 F4 touch frame STM32F20xxx reference manual Connecting the FSMC to the LCD Intel STM32F20x Connecting the FSMC to the LCD DCMI timing specification STM32F10xx diode S6 78A stm32f217xx
Text: STM32F215xx STM32F217xx ARM-based 32-bit MCU, 150DMIPs, up to 1 MB Flash/128+4KB RAM, crypto, USB OTG HS/FS, Ethernet, 17 TIMs, 3 ADCs, 15 comm. interfaces & camera Datasheet − production data Features • ■ FBGA Core: ARM 32-bit Cortex -M3 CPU 120 MHz
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STM32F215xx
STM32F217xx
32-bit
150DMIPs,
Flash/128
STM32F21xxx reference manual
STM32 F4 touch frame
STM32F20xxx reference manual
Connecting the FSMC to the LCD Intel
STM32F20x
Connecting the FSMC to the LCD
DCMI timing specification
STM32F10xx
diode S6 78A
stm32f217xx
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Untitled
Abstract: No abstract text available
Text: F-213-1 ZSTMM–112–75–L–D–285 STMM–110–02–F–D–RA STMM–113–02–T–D 2,00 mm .0787" STMM, ZSTMM SERIES SHROUDED IDC HEADER & STACKER Mates with: TCSD NO. PINS PER ROW 1 STMM PLATING OPTION 02 D TAIL OPTION OTHER OPTION SPECIFICATIONS
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F-213-1
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Untitled
Abstract: No abstract text available
Text: Specification: TS-S09D262A March, 2010 Preliminary SXP3102DA-Fxxx Rev. A February 10, 2010 Standard 1. INTRODUCTION This document is a preliminary specification for a single channel XFP MSA transceiver module. The transceiver shall be SDH STM DW100U-2A2C(F) compliant. The transceiver is a bi-directional device with a transmitter and receiver in a
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TS-S09D262A
SXP3102DA-Fxxx
DW100U-2A2C
1550nm
IEC60825-1
SXP3102DA-M-Fxxx,
SXP3102
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Untitled
Abstract: No abstract text available
Text: Specification: TS-S09D227A February, 2010 Preliminary SXP3102DA-M-Fxxx Rev. A February 3, 2010 Standard 1. INTRODUCTION This document is a preliminary specification for a single channel XFP MSA transceiver module. The transceiver shall be SDH STM DW100U-2A2C(F) compliant. The transceiver is a bi-directional device with a transmitter and receiver in a
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TS-S09D227A
SXP3102DA-M-Fxxx
DW100U-2A2C
1550nm
SXP3102LV-M,
SXP3102
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Untitled
Abstract: No abstract text available
Text: STEVAL-IDB001V1 Bluetooth low energy development kit based on the STBLC01 Data brief Features • STBLC01 Bluetooth low energy controller in a standalone RF module ■ STM32L Discovery board, including STLINK ■ Associated STBLC01 development kit, including documentation, firmware for STM32L
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STEVAL-IDB001V1
STBLC01
STBLC01
STM32L
STM32L
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30F126
Abstract: CB417 P6KE200A equivalent 28b 237 LDP24A SM5908 SMAJ12CA-TR P6KE15CA SMB BZW04-48B SMBJ13CA
Text: PROTECTION and IPADS The Immunity of your system Quick Reference Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions DATA PROTECTION • EMI FILTERS Data protection: ESD suppression IRM max @ VRM µA (V) VBR min @ IR (V) (mA) Array Function
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SGPROTEC/0201
30F126
CB417
P6KE200A equivalent
28b 237
LDP24A
SM5908
SMAJ12CA-TR
P6KE15CA SMB
BZW04-48B
SMBJ13CA
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PDF
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transistor Bs 998
Abstract: AN1294 PD55008 PD55008S
Text: PD55008 PD55008S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V • NEW RF PLASTIC PACKAGE DESCRIPTION
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PD55008
PD55008S
PD55008
PowerSO-10RF.
transistor Bs 998
AN1294
PD55008S
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Untitled
Abstract: No abstract text available
Text: PD55008-E PD55008S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 17dB gain @ 500 MHz/12.5 V ■ New RF plastic package PowerSO-10RF
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PD55008-E
PD55008S-E
Hz/12
PowerSO-10RF
PowerSO-10RF.
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AN1294
Abstract: PD55008 PD55008S 11 0741
Text: PD55008 PD55008S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V • NEW RF PLASTIC PACKAGE DESCRIPTION
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PD55008
PD55008S
PD55008
PowerSO-10RF.
AN1294
PD55008S
11 0741
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PDF
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smd z5 transistor
Abstract: AN1294 PD55008 PD55008S
Text: PD55008 PD55008S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V • NEW RF PLASTIC PACKAGE
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PD55008
PD55008S
PD55008
PowerSO-10RF.
smd z5 transistor
AN1294
PD55008S
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PDF
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Untitled
Abstract: No abstract text available
Text: SD57045 RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • ■ ■ ■ EXCELLENT THERMAL STABILITY COMMON SOURCE CONFIGURATION POUT = 45 W PEP with 13 dB gain @ 945 MHz BeO FREE PACKAGE DESCRIPTION The SD57045 is a common source N-Channel
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SD57045
SD57045
TSD57045
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PD55003
Abstract: PD55003S
Text: PD55003 PD55003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE
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PD55003
PD55003S
PD55003
PowerSO-10RF.
PD55003S
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PD55008
Abstract: AN1294 J-STD-020B PD54003S-E PD55008-E PD55008S PD55008S-E PD55008STR-E PD55008TR-E
Text: PD55008-E PD55008S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 17dB gain @ 500 MHz/12.5 V ■ New RF plastic package PowerSO-10RF
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PD55008-E
PD55008S-E
Hz/12
PowerSO-10RF
PowerSO-10RF.
PD55008
AN1294
J-STD-020B
PD54003S-E
PD55008-E
PD55008S
PD55008S-E
PD55008STR-E
PD55008TR-E
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PD55008
Abstract: PD55008-E PD55008S PD55008S-E PD55008STR-E PD55008TR-E AN1294
Text: PD55008-E PD55008S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 8W with 17dB gain @ 500MHz / 12.5V ■ New RF plastic package
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PD55008-E
PD55008S-E
500MHz
PowerSO-10RF
PD55008
PowerSO-10RF.
PD5500and
PD55008-E
PD55008S
PD55008S-E
PD55008STR-E
PD55008TR-E
AN1294
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PDF
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PD54003
Abstract: PD54003S AN1294
Text: PD54003 PD54003S RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W WITH 12 dB gain @ 500 MHz • NEW RF PLASTIC PACKAGE PowerSO-10RF formed lead
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PD54003
PD54003S
PowerSO-10RF
PD54003
PowerSO-10RF.
PD54003S
AN1294
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PDF
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702 TRANSISTOR smd
Abstract: SU 179 702 Z smd TRANSISTOR electrolitic capacitor Hitano smd transistor w J 3 58 SMD Transistor z6 smd z5 transistor transistor 702 smd power transistor smd z9 AN1294
Text: PD54003 PD54003S RF POWER TRANSISTORS The LdmoST FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W WITH 12 dB gain @ 500 MHz • NEW RF PLASTIC PACKAGE PowerSO-10RF
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PD54003
PD54003S
PowerSO-10RF
PD54003
PowerSO-10RF.
702 TRANSISTOR smd
SU 179
702 Z smd TRANSISTOR
electrolitic capacitor Hitano
smd transistor w J 3 58
SMD Transistor z6
smd z5 transistor
transistor 702 smd power
transistor smd z9
AN1294
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PDF
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J-STD-020B
Abstract: PD55008L 0951
Text: PD55008L RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCED DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V • INTEGRATED ESD PROTECTION
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PD55008L
PD55008L
J-STD-020B
0951
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Untitled
Abstract: No abstract text available
Text: D DO NOT BEALE _ ICV 1S 10N FECOW>_ 30JA96 Al WAS PE054296 & RELEASED 96000S RDS JAK 94AP96 4.06 WA5 3.50 Z.44 WAS 3.00 Z4SE96 Bl NOTES Z4JL97 REVISED NOTE #4 O GO O' Z4SE97 173 179Z49 3JZ DJZ REVISED DIMS 4 PLCS] & NOTE #7 ELECTRIC SYSTEMS
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OCR Scan
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30JA96
PE054296
96000S
94AP96
Z4SE96
Z4JL97
Z4SE97
179Z49
R0100194.
003BMM
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PDF
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20113
Abstract: Diode 20A/30v C20T03QL C20T03QL-11A S251 23S-I 10417 QL-11A
Text: SCHOTTKY BARRIER DIODE C20T03QL C20T03QL-UA 2 0 A /3 0 V 4.8UB9 ,. 4Ì4Ì.173) . I0.4i.409) r m m jy s) FE A T U R E S , 10.61417) I Ô.0.378) 10.K.398) I 8.5 .335)l o | SQUARE-PAK | TO-263AB (SMD) Packaged in 24mm T ape and Reel ; C 2 0 T -Q L •*-
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OCR Scan
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0A/30V
C20T03QL
C20T03QL-UA
O-263AB
C20T-QL
O-220
QL-11A
C20T03QL-11A
20113
Diode 20A/30v
C20T03QL-11A
S251
23S-I
10417
QL-11A
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PDF
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SC08010
Abstract: STH26N25 STH26N25FI
Text: 7 ^ 2 3 7 0045^35 173 « S G T H STH26N25 STH26N25FI SGS-THOMSON ^ SraOiDûS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STH 26N 25 STH 26N 25FI V d ss RDS(on Id 250 V 250 V < 0.11 n < 0 .1 1 n 26 A 16 A I . . . . . TYPICAL FtDS(on) = 0.085 Q AVALANCHE RUGGEDNESS TECHNOLOGY
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OCR Scan
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STH26N25
STH26N25FI
STH26N25
STH26N25FI
004ST41
STH26N25/FI
SC08010
SC08010
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