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    17400D Search Results

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    17400D Price and Stock

    Vishay Sfernice RCMA0217400DES03

    SFERNICE FIXED RESISTORS
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    DigiKey RCMA0217400DES03 Bag 10
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    SiTime Corporation SIT1408BI-11-XXN-8.017400D

    OSCILLATOR, SIT1408, -40 to 85C, 2520, 20ppm, 2.25V-3.63V, 8.0174MHz, ST, T&R - Tape and Reel (Alt: SIT1408BI-11-XXN-8)
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    Avnet Americas SIT1408BI-11-XXN-8.017400D Reel 12 Weeks 3,000
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    SiTime Corporation SIT8008AI-11-XXS-8.017400D

    PROGRAMMABLE, LOW POWER OSCILLATOR, -40 TO 85C, 2520, 20PPM, 2.25V-3.63V, 8.0174MHZ, ST, SMD, NRND - Tape and Reel (Alt: SIT8008AI-11-XXS-8)
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    Avnet Americas SIT8008AI-11-XXS-8.017400D Reel 12 Weeks 3,000
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    SiTime Corporation SIT8008BI-11-XXS-8.017400D

    PROGRAMMABLE, LOW POWER OSCILLATOR, -40 TO 85C, 2520, 20PPM, 2.25V-3.63V, 8.0174MHZ, ST, SMD - Tape and Reel (Alt: SIT8008BI-11-XXS-8)
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    Avnet Americas SIT8008BI-11-XXS-8.017400D Reel 12 Weeks 3,000
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    SiTime Corporation SIT8008BI-11-YYS-8.017400D

    MEMS Crystal Oscillator 8.0174MHz 1.62V to 3.63V 15pF 4-Pin SMD T/R - Tape and Reel (Alt: SIT8008BI-11-YYS-8)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SIT8008BI-11-YYS-8.017400D Reel 12 Weeks 3,000
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    17400D Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: VG26 V (S)17400D 4,194,304 x 4 - Bit CMOS Dynamic RAM VIS Description The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power


    Original
    PDF 17400D 127mm) 025mm) 1G5-0126

    Untitled

    Abstract: No abstract text available
    Text: VG26 V (S)17400D 4,194,304 x 4 - Bit CMOS Dynamic RAM VIS Description The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power


    Original
    PDF 17400D 127mm) 025mm) 1G5-0126

    Untitled

    Abstract: No abstract text available
    Text: VG26 V (S)17400D 4,194,304 x 4 - Bit CMOS Dynamic RAM VIS Description The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power


    Original
    PDF 17400D 127mm) 025mm) 1G5-0126

    Untitled

    Abstract: No abstract text available
    Text: VG26 V (S)17400D 4,194,304 x 4 - Bit CMOS Dynamic RAM VIS Description The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power


    Original
    PDF 17400D 127mm) 025mm) 1G5-0126

    G5012

    Abstract: No abstract text available
    Text: VIS VG26 V (S)17400D 4 ,1 9 4 ,3 0 4 x 4 - Bit CMOS Dynamic RAM D escription The device is C M O S D ynam ic RAM organized as 4 ,1 9 4 ,3 0 4 w ords x 4 bits. It is fabricated w ith an advanced subm icron C M O S te ch n o lo g y and designed to operate from a single 5V only or 3.3V only pow er


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    PDF 17400D 17400D 17400DJ 26/24-Pin 127mm) G5-0126 age25 G5012

    Untitled

    Abstract: No abstract text available
    Text: VG26 V (S)17400D 4,194,304x4-Bit CMOS Dynamic RAM Description The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power


    OCR Scan
    PDF 17400D 304x4-Bit 396/36astic l27raru)

    Untitled

    Abstract: No abstract text available
    Text: VIS VG26 V (S)17400D 4 ,1 9 4 ,3 0 4 x 4 - Bit CMOS Dynamic RAM Description The device is CMOS Dynamic RAM organized as 4,194,304 words x 4 bits. It is fabricated with an advanced submicron CMOS technology and designed to operate from a single 5V only or 3.3V only power


    OCR Scan
    PDF 17400D 17400DJ 300mil 26/24-Pin 127irun) G5-0126

    D-50

    Abstract: MSM5117400 MSM5117400D MSM5117400D-50 MSM5117400D-60 MSM5117400D-70
    Text: O K I Semiconductor This version:Apr,1999 M S M 5 1 1 7 4 0 0 P _ 4,194,304-W o rd x 4-B it D Y N A M IC RAM : FA ST PAGE M O D E TYPE D ESC R IP TIO N The 17400D is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS


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    PDF 7400D 304-Word MSM5117400D 26/24-pin cycles/32 D-50 MSM5117400 MSM5117400D-50 MSM5117400D-60 MSM5117400D-70

    VG264265

    Abstract: VG46VS8325AQ VM43217405CJSA VP4-64 VS46417801BTGC VG46VS8325BO VG264 VM83217400CJSA vs46417801bt VG46VS8325
    Text: Product Selection Guide 1.2. Product Selection Guide DRAM DRAM Part Number 4 M h D ii V.M Description Conf./Vol. Access Time ns VG264260CJ VG26V4265CJ VG264265CJ 1 256K xl6 256Kxl6 256K xl6 5V 3,3V 5V 25/28/30/35 40/50/60 25/28/30/35 VG26(S)17400CJ VG26(S)17405CJ


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    PDF VG264260CJ VG26V4265CJ VG264265CJ 256Kxl6 17400CJ 17405CJ VG26V 17400DJ 17405DJ VG264265 VG46VS8325AQ VM43217405CJSA VP4-64 VS46417801BTGC VG46VS8325BO VG264 VM83217400CJSA vs46417801bt VG46VS8325