transistor 2SC2539
Abstract: 2SC2539
Text: 1 1 I 1 DESCRIPTION 2SC2539 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. OUTLINE DRAWING Dimensions in mm FEATURES @ High power gain: Gpe& 14.5dB @V o. = 13.5V, PO = 14W, f = 175MHr
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2SC2539
175MHr
175MHt,
T-31E
transistor 2SC2539
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Untitled
Abstract: No abstract text available
Text: , Unc. RF POWER TRANSISTOR 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2SC1946A NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1946A is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHP band mobile radio
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2SC1946A
2SC1946A
i10dB
175MHr
175MHz,
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