TPS74X01
Abstract: No abstract text available
Text: User's Guide SLVU189A – February 2007 – Revised December 2007 TPS74701EVM-177 and TPS74801EVM-177 This user's guide describes the characteristics, operation, and use of the TPS74x01EVM-177 evaluation module EVM . This EVM contains either the TPS74701 or TPS74801 low-dropout linear regulator IC. This
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SLVU189A
TPS74701EVM-177
TPS74801EVM-177
TPS74x01EVM-177
TPS74701
TPS74801
TPS74X01
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PMBFJ174
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995 NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel
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PMBFJ174
MAM386
R77/02/8
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PMBFJ174
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification April 1995 NXP Semiconductors Product specification P-channel silicon field-effect transistors PMBFJ174 to 177 DESCRIPTION Silicon symmetrical p-channel
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PMBFJ174
MAM386
R77/02/8
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BD175
Abstract: No abstract text available
Text: BD175/177/179 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol
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BD175/177/179
O-126
BD175
BD177
BD179
BD179
BD175
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equivalent bd177
Abstract: BD175 BD177 BD179
Text: BD175/177/179 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively TO-126 1 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol
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BD175/177/179
O-126
BD175
BD177
BD179
equivalent bd177
BD175
BD177
BD179
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bd175
Abstract: bd177
Text: BD175/177/179 BD175/177/179 Medium Power Linear and Switching Applications • Complement to BD 176/178/180 respectively TO-126 1. Emitter 2.Collector 3.Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO
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BD175/177/179
O-126
BD175
BD177
BD179
BD179
bd175
bd177
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free transistor data base book A.Z
Abstract: OPA177FP AD707 OP-07 OP-177 OP-77 OPA177 OPA177F OPA177G Amplifier thermocouple op177
Text: OPA 177 OPA177 OPA 177 Precision OPERATIONAL AMPLIFIER FEATURES APPLICATIONS ● LOW OFFSET VOLTAGE: 25µV max ● PRECISION INSTRUMENTATION ● LOW DRIFT: 0.3µV/°C ● DATA ACQUISITION ● HIGH OPEN-LOOP GAIN: 130dB min ● LOW QUIESCENT CURRENT: 1.5mA typ
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OPA177
130dB
OP-07,
OP-77,
OP-177,
AD707,
OPA177
free transistor data base book A.Z
OPA177FP
AD707
OP-07
OP-177
OP-77
OPA177F
OPA177G
Amplifier thermocouple op177
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FSQ510 Equivalent
Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2
Text: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178
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GP-20)
FSQ510 Equivalent
BTA12 6008
bta16 6008
ZIGBEE interface with AVR ATmega16
Precision triac control thermostat
thyristor t 558 f eupec
gw 5819 diode
transistor a564
A564 transistor
BSM25GP120 b2
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ctx128
Abstract: IC 8021-2 CTX128 diode SE271 CSA 20.00MX ZTT-4.00MG ZTB455E CSX750PCC ECS-327SMO ECS-10-13-1H
Text: Section Reference Index Connectors, Cable Assemblies, IC Sockets. . . . . . . . . . . . . . . . 14-176 Semiconductors, ICs, Transistors, Diodes, Rectifiers . . . 177-313 INCLUDES SMT INCLUDES SMT A B S C 6E 3. I Crystals, Oscillators . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 314-333
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pmbfj174
Abstract: marking p6s P6S SMD
Text: DISCRETE SEMICONDUCTORS DATA SHEET PMBFJ174 to 177 P-channel silicon field-effect transistors Product specification File under Discrete Semiconductors, SC07 April 1995 Philips Semiconductors Product specification P-channel silicon field-effect transistors
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PMBFJ174
MAM386
marking p6s
P6S SMD
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BD176
Abstract: BD178 BD180 BD175
Text: Inchange Semiconductor Product Specification BD176 BD178 BD180 Silicon PNP Power Transistors ・ DESCRIPTION With TO-126 package ・Complement to type BD175 /177 /179 APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION
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BD176
BD178
BD180
O-126
BD175
BD176
BD178
BD180
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BD180
Abstract: BD178 BD176 BD175
Text: SavantIC Semiconductor Product Specification BD176 BD178 BD180 Silicon PNP Power Transistors DESCRIPTION With TO-126 package •Complement to type BD175 /177 /179 APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter
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BD176
BD178
BD180
O-126
BD175
BD176
BD178
BD180
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2N1132
Abstract: 2N1131 2N1131L 2N1132L
Text: TECHNICAL DATA LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 Devices Qualified Level 2N1131 2N1131L 2N1132 2N1132L JAN JANTX TO-39* MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
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MIL-PRF-19500/177
2N1131
2N1131L
2N1132
2N1132L
2N1131,
2N1311L,
2N1312L
2N1132
2N1131
2N1131L
2N1132L
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2N1132
Abstract: 2N1131 2N1311 2N1131L 2N1132L ic4050 2n1312 low power pnp
Text: TECHNICAL DATA LOW POWER PNP SILICON TRANSISTOR Qualified per MIL-PRF-19500/177 Devices Qualified Level 2N1131 2N1131L 2N1132 2N1132L JAN JANTX TO-39* MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current
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MIL-PRF-19500/177
2N1131
2N1131L
2N1132
2N1132L
2N1131,
2N1311L,
2N1312L
2N1132
2N1131
2N1311
2N1131L
2N1132L
ic4050
2n1312
low power pnp
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BC 179
Abstract: transistor af 178 BC179 BC178B Q62702-C685 TI-5045 BC179E C154 TRANSISTOR BC 177 transistor
Text: 2SC ì> • 023SbOS O D Q m iS 7 H S I E 6 ¿pc xj*tLL^ —- jO D '*y* <Ky PNP Silicon Transistors * " BC 177 -S IE M E N S AKTIENGESELLSCHAF -BC179 BC 177, BC 178, and BC 179 are epitaxial PNP silicon planar transistors in TO 18 case
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023SbOS
--------------------------------BC179
62702-C
Q62702-C141
62702-C142
Q62702-C685
62702-C153
62702-C154
62702-C686
BC 179
transistor af 178
BC179
BC178B
TI-5045
BC179E
C154 TRANSISTOR
BC 177 transistor
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BC179
Abstract: 27kII bc109 gain bc177 BC 179 bc1782 BC108 BC109 BC178 em 179
Text: BC 177 BC 178 BC 179 S I L I C O N P L A N A R PNP LOW NOISE GENERAL PURPOSE AUDIO AMPLIFIERS The BC 177, BC 178 and BC 179 are silico n planar epitaxial PNP transistors in TO-18 metal case. They are suitable fo r use in driver audio stages, low noise input
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BCt79
BC108,
BC109.
1BC177
BC178
BC179
BC179
27kII
bc109 gain
bc177
BC 179
bc1782
BC108
BC109
em 179
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transistor bc 325
Abstract: transistor bf 179 Transistor BC 177 TO-18 BC-177 pnp transistor transistor BC 324 transistor bc 102 low noise transistor bc 179 transistor bc 321 BC 177 transistor BC 109 Transistor
Text: ^ BC 177 * BC178 BC179 PNP SILICON TRANSISTORS, EP ITAXIAL PLANAR TRANSISTORS PNP S ILIC IU M , PLAN A R E P IT A X IA U X Compì, of BC 107, BC 108, BC 109 H* Preferred device Dispositif recommandé The PNP planar epitaxial transistors BC 177, 3C 178 and BC 179 are intended for use in L.F.
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h21e-
transistor bc 325
transistor bf 179
Transistor BC 177
TO-18 BC-177 pnp transistor
transistor BC 324
transistor bc 102
low noise transistor bc 179
transistor bc 321
BC 177 transistor
BC 109 Transistor
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transistor af 178
Abstract: bc 162 transistor TRANSISTOR BC 157 BC179 BC179 transistor bc 106 transistor TO-18 BC-177 pnp transistor Q62702-C141 BG177 bc 103 transistor
Text: 2SC ì> • 023SbOS O D Q m i S 7 H S I E 6 — ¿p c xj*tLL^ D '*y * <Ky PNP Silicon Transistors * jO " BC 177 -SIEMENS AKTIENGESELLSCHAF - BC179 BC 177, BC 178, and BC 179 are epitaxial PNP silicon planar transistors in TO 18 case 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors are
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23SbOS
-BC179
Q62702-C684
Q62702-C141
Q62702-C142
Q62702-C685
Q62702-C153
Q62702-C154
Q62702-C155
BC1791Â
transistor af 178
bc 162 transistor
TRANSISTOR BC 157
BC179
BC179 transistor
bc 106 transistor
TO-18 BC-177 pnp transistor
Q62702-C141
BG177
bc 103 transistor
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BC179
Abstract: BC pnp 200mA UL2466 BC 179 j246 em 179
Text: BC 177 BC 178 BC179 SILICON PLANAR PNP LOW N O IS E G E N E R A L P U R P O S E A U D I O A M P L I F I E R S The B C 177, B C 178 and B C 179 are silicon planar epitaxial P N P transistors in T O - 1 8 metal case. They are suitable for use in driver audio stages, low noise input audio stages and as low
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BC179
BC pnp 200mA
UL2466
BC 179
j246
em 179
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Untitled
Abstract: No abstract text available
Text: BD176/178/180 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 175/177/179 respectively ABSOLUTE MAXIMUM RATINGS C haracteristic ‘ Collector Base Voltage : BD176 : BD178 : BD180 Collector Emitter Voltage
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BD176/178/180
BD176
BD178
BD180
BD176
BD178
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transistor bd176
Abstract: bd178 bd180 E434
Text: BD176/178/180 PNP EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS TO-126 • Complement to BD 175/177/179 respectively ABSOLUTE MAXIMUM RATINGS Characteristic ‘ Collector Base Voltage Collector Emitter Voltage Rating Unit -45
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BD176/178/180
O-126
BD176
BD178
BD180
150mA
250mA
transistor bd176
bd178
bd180
E434
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TRANSISTOR 431
Abstract: transistor 431 c BD177
Text: BD175/177/179 NPN EPITAXIAL SILICON TRANSISTOR MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS • Complement to BD 176/178/180 respectively VABSOLUTE MAXIMUM RATINGS Characteristic ‘ Collector Base Voltage Symbol : BD175 : BD177 Rating VcBO : BD179 Collector Emitter Voltage
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BD175/177/179
BD175
BD177
BD179
BD179
300uS,
150mA
250mA
TRANSISTOR 431
transistor 431 c
BD177
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BD NPN transistors 177
Abstract: IC 74157 BD 2418 BD179 BD175 BD177 bd 175 236 TFK BD176 din 125a
Text: BD 175 • BD 177 • BD 179 Silizium-NPN-Epibasis-Leistungstransistoren Silicon NPN Epibase Power Transistors Anw endungen: Audio-Verstärker, -Treiber und -Endstufen Applications: Allgemein im NF-Bereich Audio amplifier, driver and output stages General in AF-range
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CEOsus80
BD NPN transistors 177
IC 74157
BD 2418
BD179
BD175
BD177
bd 175
236 TFK
BD176
din 125a
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2N3735
Abstract: No abstract text available
Text: k\v\ SEMICONDUCTOR! TECHNICAL DATA Ä 3735,ai4T737 m CHWAUONCS ' 2885 yefc»rsm9 Highway SuM» 14 Ronkontom«, N.Y. 177^ 1 NPN Silicon Small-Signal Transistors designed for general-purpose switching and amplifier applications MAXIMUM RA TIN GS Symbol Valu»
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ai4T737
2N3737
2N3735
2N3735
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