MIL-STD-1835
Abstract: D22 PACKAGE DIAGRAM 40 PIN CERDIP D2 Package diagram D2 Package MIL-STD d 1835 D5011 cerdip cerdip 16 lead
Text: Package Diagram Ceramic Dual-In-Line Packages 16-Lead 300-Mil CerDIP D2 MIL-STD-1835 D-2 Config. A 18-Lead (300-Mil) CerDIP D4 MIL-STD-1835 D-6 Config. A 1 Package Diagram 20-Lead (300-Mil) CerDIP D6 MIL-STD-1835 D-8 Config. A 22–Lead (400–Mil) CerDIP D8
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16-Lead
300-Mil)
MIL-STD-1835
18-Lead
20-Lead
D22 PACKAGE DIAGRAM
40 PIN CERDIP
D2 Package diagram
D2 Package
MIL-STD
d 1835
D5011
cerdip
cerdip 16 lead
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GDIP1-T18
Abstract: EA MARK 18-LEAD D-6 PACKAGE
Text: Hermetic Packages for Integrated Circuits Ceramic Dual-In-Line Frit Seal Packages CERDIP F18.3 MIL-STD-1835 GDIP1-T18 (D-6, CONFIGURATION A) LEAD FINISH c1 18 LEAD CERAMIC DUAL-IN-LINE FRIT SEAL PACKAGE -D- -A- BASE METAL E M -Bbbb S C A-B S -C- S1 0.200
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MIL-STD-1835
GDIP1-T18
59errun.
GDIP1-T18
EA MARK
18-LEAD D-6 PACKAGE
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Untitled
Abstract: No abstract text available
Text: a FEATURES 18 MSPS Correlated Double Sampler CDS 6 dB to 40 dB 10-Bit Variable Gain Amplifier (VGA) Low Noise Clamp Circuits Preblanking Function 10-Bit 18 MSPS A/D Converter 3-Wire Serial Digital Interface 3 V Single Supply Operation Low Power CMOS 48-Lead LQFP Package
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10-Bit
48-Lead
AD9804
AD9804
48-Lead,
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CDIP2-T18
Abstract: 2N18 18-LEAD D-6 PACKAGE
Text: Hermetic Packages for Integrated Circuits Ceramic Dual-In-Line Metal Seal Packages SBDIP D18.3 MIL-STD-1835 CDIP2-T18 (D-6, CONFIGURATION C) LEAD FINISH c1 -A- 18 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE -DBASE METAL E b1 M (b) M -Bbbb S C A - B S SECTION A-A
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MIL-STD-1835
CDIP2-T18
CDIP2-T18
2N18
18-LEAD D-6 PACKAGE
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27BSC
Abstract: marking 62m
Text: WTK9410 8 D S 7 D S 2 P b Lead Pb -Free 1 Surface Mount N-Channel Enhancement Mode MOSFET 6 D 3 S DRAIN CURRENT 18 AMPERES DRAIN SOURCE VOLTAGE 30 VOLTAGE 5 D 4 G Features: * Simple Drive Requirement. * Low On-Resistance. * Fast Switching. * Super high dense cell design for low RDS(ON)
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WTK9410
300us,
12-Mar-07
27BSC
27BSC
marking 62m
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Untitled
Abstract: No abstract text available
Text: MN103SK7 Series MN103SK7N Type MN103SK7R Mask ROM Internal ROM type ROM byte 512K 1024K RAM (byte) 32K 40K Package (Lead-free) Minimum Instruction Execution Time UBGA257-P-1111A 16.7 ns (at 2.7 V to 3.6 V, 60 MHz) • Interrupts RESET. IRQ x 11. NMI. Key input. Timer × 32. Input capture × 16. PWM × 6. SIF × 24. I2C × 4. DMA × 18. WDT. A/D. System error
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MN103SK7
UBGA257-P-1111A
MN103SK7N
1024K
MN103SK7R
16-bit
32-bit
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Untitled
Abstract: No abstract text available
Text: MN103SD0 Series MN103SD0Q MN103SFD0R Mask ROM FLASH ROM byte 768K 1024K RAM (byte) 32K 40K Type Internal ROM type Package (Lead-free) Minimum Instruction Execution Time UBGA257-P-1111A 16.7 ns (at 2.7 V to 3.6 V, 60 MHz) • Interrupts RESET. IRQ x 11. NMI. Key input. Timer × 32. Input capture × 16. PWM × 6. SIF × 24. I2C × 4. DMA × 18. WDT. A/D. System error
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MN103SD0
MN103SD0Q
UBGA257-P-1111A
MN103SFD0R
1024K
16-bit
32-bit
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MS-001-BB
Abstract: MS-001-AA dip-10 MS-001-AD MS-001BB MS-001-BA 77-1 ms-001aa ma003 010AA
Text: PACKAGE OUTLINES PLASTIC DIP 0.300" row spacing PACKAGE DESIGNATORS A, B, or M Dimensions in Inches 0.014 0.008 N 0.430 MAX 0.280 0.240 0.300 BSC N/2 1 0.070 0.045 0.100 0.005 BSC MIN NOTE 2 NOTE 6 D NOTE 1 0.210 MAX 0.005 0.015 MIN 0.150 0.115 MIN 0.022
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MA-001B
MA-003A
MS-011AB
MS-011AC
MS-001-BB
MS-001-AA
dip-10
MS-001-AD
MS-001BB
MS-001-BA
77-1
ms-001aa
ma003
010AA
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IRS21064
Abstract: IRS2106 IRFBC30 IRFBC20 IRFBC40 IRFPE50
Text: PRELIMINARY Data Sheet No. PD60246 revB IRS2106/IRS21064 S PbF HIGH AND LOW SIDE DRIVER Features Packages • Floating channel designed for bootstrap operation • Fully operational to +600 V 8-Lead SOIC • Tolerant to negative transient voltage, dV/dt immune
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PD60246
IRS2106/IRS21064
IRS2106)
14-Lead
Input6/IRS21064
IRS2106PbF
IRS2106SPbF
IRS2106STRPbF
IRS21064
IRS2106
IRFBC30
IRFBC20
IRFBC40
IRFPE50
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IRFBC30
Abstract: IRFBC20 IRFBC40 IRFPE50 IRS2106 IRS21064
Text: Data Sheet No. PD60246 IRS2106/IRS21064 S PbF HIGH AND LOW SIDE DRIVER Features Packages • Floating channel designed for bootstrap operation • Fully operational to +600 V • Tolerant to negative transient voltage, dV/dt immune 8-Lead PDIP • Gate drive supply range from 10 V to 20 V
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PD60246
IRS2106/IRS21064
14-Lead
IRS2106)
IRS2106PbF
IRS2106SPbF
IRS2106STRPbF
IRFBC30
IRFBC20
IRFBC40
IRFPE50
IRS2106
IRS21064
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RH1013MW
Abstract: RH1013M RH1013MH RH1013MJ8
Text: SPEC NO. 05-08-5013 REV. K RH1013M, DUAL PRECISION OPERATIONAL AMPLIFIER REVISION RECORD DESCRIPTION REV A B C D E DATE INITIAL RELEASE PARAGRAPH 3.8 NOW REFLECTS THE CORRECT FIGURES FOR BURN-IN CIRCUITS FOR EACH PERTINENT PACKAGE. DELETION OF PARAGRAPHS 3.12.1 AND 3.12.2, AND INCORPORATION
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RH1013M,
MIL-STD-883
MIL-STD-883.
RH1013MW
RH1013M
RH1013MH
RH1013MJ8
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IRFBC30
Abstract: IRS2108 IR21084 IRFBC20 IRFBC40 IRFPE50 IRS21084 IRS2108S
Text: Data Sheet No. PD60260 IRS2108/IRS21084 S PbF HALF-BRIDGE DRIVER Features • Floating channel designed for bootstrap operation • Fully operational to +600 V • Tolerant to negative transient voltage, dV/dt • • • • • • • • • • Packages
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PD60260
IRS2108/IRS21084
IRS21084)
IRS2108PbF
IRS2108SPbF
IRS2108STRPbF
14-Lead
IRS21084PbF
IRS21084SPbF
IRFBC30
IRS2108
IR21084
IRFBC20
IRFBC40
IRFPE50
IRS21084
IRS2108S
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DD 127 D TRANSISTOR
Abstract: FK 231 SA 220 transistor fn 1016 LTC DWG FN 1016 dp 502 t TO 220 MOT E SO18 TI 3-Lead Plastic DD Pak ltc m 5-Lead Plastic DD Pak ltc Q
Text: PACKAGE PACKAGE CROSSDIMENSIONS REFERENCE LCC METAL CAN CERDIP Ceramic Dual-In-Line METAL CANS SSOP Shrink Small Outline TSSOP Thin Shrink Small Outline SIDE BRAZED PACKAGE OUTLINE DESCRIPTION LTC NSC MOT TI LINFIN MAXIM 8-Lead Side Brazed Hermetic D8 D
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20-Lead
20-Lead
28-Lead
O-226)
DD 127 D TRANSISTOR
FK 231 SA 220
transistor fn 1016
LTC DWG
FN 1016
dp 502 t
TO 220 MOT E
SO18 TI
3-Lead Plastic DD Pak ltc m
5-Lead Plastic DD Pak ltc Q
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Untitled
Abstract: No abstract text available
Text: SPEC NO. 05-08-5014 REV. U REV A B C D E F G H J RH1014M, QUAD PRECISION OPERATIONAL AMPLIFIER REVISION RECORD DESCRIPTION INITIAL RELEASE • PAGE 2, ADDED PARAGRAPHS 3.2.1 AND 3.2.2 TO IDENTIFY “01” AND “02” AS PACKAGE OPTIONS. CHANGED THE PART NUMBER FROM”RH1014MWB14 TO “RH1014MWB”.
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RH1014M,
RH1014MWB14
RH1014MWBâ
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ASEA
Abstract: MS-013-AB MS-012-AC MS 013AA MS-013-AA MA007 MS-012AB Package
Text: PACKAGE OUTLINES PLASTIC SOIC 0.150” body width PACKAGE DESIGNATOR L Dimensions in Inches (for reference only) N 0.0098 0.0075 0.1574 0.1497 0.020 0.013 0.2440 0.2284 1 2 0.050 3 BSC D 0.050 0.016 0° TO 8° 0.0688 0.0532 0.0040 MIN. N Number of Leads
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MA-007
MS-012AA
MS-013AA
MS-013AB
MS-013AC
MS-013AD
MS-013AE
OT-23/TO-236AB)
ASEA
MS-013-AB
MS-012-AC
MS 013AA
MS-013-AA
MA007
MS-012AB Package
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Untitled
Abstract: No abstract text available
Text: TPM Multianode Tantalum Ultra Low ESR Capacitor Low ESR, high capacitance and high ripple current are the key parameters for processor filtering. Multianode configuration within a standard E case package meets these requirements. Parameters such as ESR 15mΩ, capacitance 1500 F and ripple
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1500F
120Hz,
J-STD-020C.
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Untitled
Abstract: No abstract text available
Text: GaAs 1C SPDT Switch Reflective DC-18 GHz ESAlpha AS018R2-65 Features •65 ■ Broadband D C -18 GHz 0 .3 8 8 9 .8 6 m m 0 0 .0 7 0 (1 .7 8 m m 0 .1 1 5 (2 .9 2 m m ) ■ Reflective, Short ± 0.002 ■ 5 Lead Hermetic Package in IS^$ KOVAR 0 .1 6 4 (4 .1 6 m m ) {
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DC-18
AS018R2-65
AS018R2-65
3/99A
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Untitled
Abstract: No abstract text available
Text: CMOS DUAL SyncFlFO DUAL 256 x 18, DUAL 512 x 18, DUAL 1024x18 d ty IDT72805LB IDT72815LB IDT72825LB Integrated Device Technology, Inc. • Enable puts output data bus in high impedance state • High-performance submicron CMOS technology • Available in a 121-lead, 1 6 x 1 6 mm plastic Ball Grid
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1024x18
IDT72805LB
IDT72815LB
IDT72825LB
121-lead,
72205LB
72215LB
72225LB
IDT72805/72815/72825
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Faa23
Abstract: No abstract text available
Text: ~G E SOLID STATE 01 De | 3fl7S0fll QD13L73 Q 01E 13672 ' 3875081 G E SOLID STATE CA3300 Types D “p CMOS Video Speed 6-Bit Flash Analog-to-Digital Converter For Use in Low-Power Consumption, High-Sp Digitization Applications ;u 18-Lead Dual-ln-Llne kPlastic Package
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QD13L73
CA3300
18-Lead
15-MHz
66-ns
30-MHz
92CM-33324
CA3300H.
Faa23
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MS 21340-05
Abstract: MS24331 JCA 812 MIL-W-5088 MIL-S-8805 MS2508I-C6
Text: MICRO SWITCH r FREEPORT, IL L IN O IS . A D IV IS IO N OF M FG . 4 E N 1 -6 SWITCH-ENCLOSED U S A HONEYW ELL MILITARY STDS PART NO. MS 243 31 - 4 CODE 9 1 9 2 9 St FED. C A T A L O G L IS T IN G lf> 1.50 DIA 8 NO. 18 WIRE LEAD PER M IL - W - 2 2 7 5 9 / 7 MARKED WITH
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IC046777
IC07J8I5
787-C
MIL-W-5088
O-WITHIN-250
MIL-S-8805
MS 21340-05
MS24331
JCA 812
MIL-W-5088
MS2508I-C6
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NL235
Abstract: No abstract text available
Text: T L COMPATIBLE 10-TAP LOGIC DELAY MODULE # T2L input and outputs # Delays stable and precise # 14-pin Space Saver package ^1»*# Leads - thru-hole, J, Gull Wing or Tucked # Available in delays from 15 to 1000ns # Output and nine 9 taps - each isolated and with 10 T^L fan-out capacity
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10-TAP
14-pin
1000ns
positiveM-7TL-350
SEFXLDM-TTL-400
SSFXLDM-TTL-450
SSFXLDM-TTL-500
SSFXLDM-TTL-600
SSFXLDM-TTL-700
SSFXLDM-TTL-800
NL235
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TDS05160
Abstract: TDS05150 TDS03160 TDS03150 TDSR5150 9999 DIODE tsop1736 TLU02401 BPW2 silver ag wire Bond
Text: V I^ W Y Vishay Telefunken Table of Package Forms Part Number Package Form Part Number Package Form Part Number Package Form TLBR5410 8 TLHR4401 11 TLMH3100 1 TLDR4400 11 TLHR4405 11 TLMH3101 1 TLDR4900 11 TLHR4600 11 TLMK3100 1 TLDR5400 TLDR5800 8 TLHR4601
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TLBR5410
TLDR4400
TLDR4900
TLDR5400
TLDR5800
TLHE4900
TLHE5100
TLHE5101
TLHE5102
TLHE5800
TDS05160
TDS05150
TDS03160
TDS03150
TDSR5150
9999 DIODE
tsop1736
TLU02401
BPW2
silver ag wire Bond
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D2412A
Abstract: No abstract text available
Text: I* jmaam i hm HHj I HBj • *IWÊ■ * ■ WÊÊ I ■ I■ WÊÊ I Silicon Rectifiers Fast-Recovery Types Forward Current RMS RCA TYPE ■ ■ ■ ■ ■ Av. ^ R M S •o A A ■ Surge Temp. Range Operating Voltage Package ■f s m A Temp.-T^ c V RRM
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D2406F
D2406A
D2406B
D2406C
D2406D
D2406M
1N3879
1N3880
1N3881
1N3882
D2412A
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Untitled
Abstract: No abstract text available
Text: lozu profite t 2l COMPATIBLE 10-TAP tO G IC DELAY MODULE # T2L input and outputs # Delays stable and precise # 14-pin DIP package time is measured at the +1.5V level on the leading edge. Rise time for all modules is 4ns maximum when measured from 0.8V to 2.0V. Temperature coefficient of delay is approxi
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10-TAP
14-pin
1000ns
C/111592
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