187 TRANSISTOR PNP Search Results

187 TRANSISTOR PNP Result Highlights (5)

Part	Manufacturer	Description
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
2SA1213	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-2 A / hFE=70~240 / VCE(sat)=-0.5 V / PW-Mini
2SA1943	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-230 V / IC=-15 A / hFE=55~160 / VCE(sat)=-3.0 V / TO-3P(L)
TTA012	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-80 V / IC=-4 A / hFE=100~200 / VCE(sat)=-0.22 V / tf=35 ns / PW-Mini
TTA004B	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-160 V / IC=-1.5 A / hFE=140~280 / VCE(sat)=-0.5 V / TO-126N

187 TRANSISTOR PNP Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Transistor AC 188 Abstract: AC 188 pnp transistor TO 1 ac188 TL 187 TRANSISTOR PNP TL 188 TRANSISTOR PNP Transistor AC 187 valvo AC 188 germanium transistor ac 188 ac187 Text: NICHT FUR N E U E N T W I C K L U N G E N AC 188 GERMANIUM - PNP - NF - TRANSISTOR für Endstufen, mit AC 187 als komplementäres Paar Mechanische Daten: Gehäuse: Metall, JEDEC TO-1, 1 A 3 DIN 41 871 Alle Elektroden sind vom Gehäuse isoliert. Farbpunkt: Kol1ektorseite	OCR Scan	hl3che11e Transistor AC 188 AC 188 pnp transistor TO 1 ac188 TL 187 TRANSISTOR PNP TL 188 TRANSISTOR PNP Transistor AC 187 valvo AC 188 germanium transistor ac 188 ac187	PDF
Untitled Abstract: No abstract text available Text: 2SB1355 Transistor, PNP Features Dimensions U n its : mm • • • • available in HRT package excellent current-to-gain characteristics low collector saturation voltage, typically VCE(sat) =-0.5 V at lc/lB = -3A /-0.3A 2SB1355 (HRT) 8.0±0.2 4.5±0.2	OCR Scan	2SB1355 2SB1355	PDF
Untitled Abstract: No abstract text available Text: Preset Counters with Dual LED Display and Advanced Counter Functionality Model DPC-21 187 $ Shown ߜ 1/16 DIN Cutout ߜ Large Dual-Line LED Display for Easy Preset and Count Value Viewing ߜ Scale Function Allows Display in Engineering Units e.g., Length, Volume	Original	DPC-21 NEMA-4/IP65 DPC-22 DPC-23 DPC23, M-133	PDF
187 TRANSISTOR PNP Abstract: 2sa684 TRANSISTOR 187 datasheet 815 transistor Text: MCC omponents 21201 Itasca Street Chatsworth !"# $ % !"# 2SA684 Features • • PNP EPITAXIAL Automatic insertion by radial taping possible. Complementary pair with 2SC1384 PLANAR TRANSISTOR TO-92NL	Original	2SA684 2SC1384 O-92NL -500mA -50mA 200MHz 187 TRANSISTOR PNP 2sa684 TRANSISTOR 187 datasheet 815 transistor	PDF
2SA1036K L T146 Abstract: No abstract text available Text: Transistors Medium Power Transistor -32V, - 0.5A 2SA1036K/2SA1577/2SA854S •External dimensions (Units: mm) 2SA1577 2SA1036K 1 1+0.2 ; -0;1 [0.&SQ.95] 0 .8 ± 0 .1 U (ß 1.3±0.1 f 1 0.65 0 65 y fa +J i! (3)01 _ •Structure Epitaxial planar type PNP silicon transistor	OCR Scan	2SA1036K/2SA1577/2SA854S -500mA 2SC2411K/ 2SC1741S 2SC4097. 2SA1036K 2SA1577 2SA854S 2SA1036K L T146	PDF
power transistor vce 600 volt Abstract: 2N2907A 2N2907AUA SFT2907A SFT2907A-4 transistor A 562 Text: SFT2907A Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 600 mA 60 Volts PNP High Speed Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information 1/	Original	SFT2907A 2N2907A 2N2907AUA SFT2222A) TR0022C power transistor vce 600 volt 2N2907AUA SFT2907A SFT2907A-4 transistor A 562	PDF
MICROPROCESSOR Z80 Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call	Original	Z80TM V20TM, V20HLTM, V25TM, V25HSTM, V30TM, V30HLTM, V33TM, V33ATM, V35TM, MICROPROCESSOR Z80 uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro	PDF
TR0022B Abstract: No abstract text available Text: SFT2907A Series Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, CA 90638 Phone: 562 404-4474 * Fax: (562) 404-1773 [email protected] * www.ssdi-power.com 600 mA 60 Volts PNP High Speed Transistor DESIGNER’S DATA SHEET Part Number / Ordering Information 1/	Original	SFT2907A 2N2907A 2N2907AUA SFT2222A) SFT2907A TR0022B TR0022B	PDF
BD81010 Abstract: No abstract text available Text: ON Semiconductor NPN BD809 Plastic High Power Silicon Transistor PNP BD810 . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. • DC Current Gain — ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ	Original	BD809 BD810 BD81010	PDF
bt39 Abstract: No abstract text available Text: M C C SOT-23 P la s tic -E n c a p s u la te T ra n s is to rs ^ M M BT3906LT1 TRANSISTOR PNP 1 .BASE 2 .EMITTER 3.COLLECTOR FEATURES Power dissipation PcM: 0.2 W (Tamb=25'C ) C ollector current ICM: -0.2 A 2.4 u_1.3 ;CoHector-base voltage ^ V(br>cbo :-40V	OCR Scan	OT-23 BT3906LT1 MMBT3906LT1 MMBT3906LT1 bt39	PDF
transistor d 188 Abstract: BD188 bd186 BD186 motorola BD190 3299 transistor Text: M O T O R O L A SC Î X S T R S / R F> 6367254 MOTOROLA Th SC DT\|b3b7ES4 96D <X ST R S/R _.F J 80565 GOflOSbS 4 D MOTOROLA E l SEMICONDUCTOR TECHNICAL DATA PLASTIC M E D IU M POWER SILICO N PNP TRANSISTOR 4 AM PERE POWER TRANSISTOR . . . designed for use in 5 to 10 Watt audio amplifiers utilizing	OCR Scan		PDF
Untitled Abstract: No abstract text available Text: Ordering number: EN 1392A _ 2SA1339/2SC3393 N0.1392A SA\YO PNP/ NPN Epitaxial Planar Silicon Transistors High-Speed Switching Applications Features • • • • Very small-sized package permitting sets to be small-sized, slim High breakdown voltage: Vc e o = ” 50V	OCR Scan	2SA1339/2SC3393 2SA1339 3197KI/1114KI	PDF
IFRZ44 Abstract: IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N Text: PRODUCT INDEX ALPHA NUMERIC INDEX Part numbers In BOLD are preferred standard parts. PART NO. 2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IRF510 IRF511 IRF512 IRF513 IRF520 IRF521 IRF522 IRF523 IRFS30 IRF531 IRF532 IRF533 IRF540 IRF541	OCR Scan	2N3904 2N3906 2N4400 2N4401 2N4402 2N4403 2N5087 2NS088 2NS551 2N6S15 IFRZ44 IRFZ43 KA3842D irf510 switch TRANSISTOR MC7805CT KA336Z Transistor mc7812ct high voltage pnp transistor 700v IRFZ44 PNP KS82C670N	PDF
2SB1516F Abstract: No abstract text available Text: 2SB1516F5 V ~ 7 > v 7s $ /Transistors a q q j v ' J ^ = \ > V ÿ > v 7 , $ " W w E p ita x ia l Planar PNP Silicon Transistor fê.M :â M t} W fà /\- Q v i Freq. Power Amp. W Rttj£ /Dimensions Unit : mm 1) VcE(sat) VcE(sat)^—0.3V 6.5 ±0.2 z-3rS ;t	OCR Scan	2SB1516F5 2SB1516F	PDF

Untitled Abstract: No abstract text available Text: UMZ1NT1G Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com Features • • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A	Original	200X400 SC-88	PDF
rjl ce Abstract: Dual General Purpose Amplifier Transistor Text: UMZ1NT1G Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com Features • • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A	Original	200X400 SC-88 rjl ce Dual General Purpose Amplifier Transistor	PDF
Untitled Abstract: No abstract text available Text: UMZ1NT1G Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com Features • • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A	Original	200X400	PDF
Untitled Abstract: No abstract text available Text: UMZ1NT1 Complementary Dual General Purpose Amplifier Transistor PNP and NPN Surface Mount http://onsemi.com Features • • • • • High Voltage and High Current: VCEO = 50 V, IC = 200 mA High hFE: hFE = 200X400 Moisture Sensitivity Level: 1 ESD Rating − Human Body Model: 3A	Original	200X400	PDF
Untitled Abstract: No abstract text available Text: um ZXT12P12DX u p e rS O T 4 UAL 12V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR UMMARY ceo=-12V; Rsat = 47 m il; lc= -3A ESCRIPTION his new 4th generation ultra low saturation transistor utilises the Zetex atrix structure com bined with advanced assem bly techniques to give	OCR Scan	ZXT12P12DX ZXT12P	PDF
TL 187 TRANSISTOR PNP Abstract: BA672 TL 188 TRANSISTOR PNP TL 188 TRANSISTOR PIN DIAGRAM aafe Text: BA6722 BA6722 h 7 > v * £ * < y K -7 < / \ V Transistor Switch Driver / Series Regulator BA6722 l i , v 'J - X U i 1CT ' t <, 2 0 0 5V U + ' z l U - S • W ^ T ^ S / D im e n s io n s (Unit : mm PNP I ! ï § T '8 t / 3 c è f t T t 'Î l'o Vcc ü(7) PNP h 7 > v X * £ f f l l ' T * ] « l ê Î l Î t o	OCR Scan	BA6722 BA6722 TL 187 TRANSISTOR PNP BA672 TL 188 TRANSISTOR PNP TL 188 TRANSISTOR PIN DIAGRAM aafe	PDF
2SD661 TRANSISTOR PNP Abstract: riaa 2SB0745 2SB0745A 2SB745 2SB745A 2SD0661 2SD661 2SD661A Text: Transistor 2SB0745, 2SB0745A 2SB745, 2SB745A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SD0661 (2SD661) and 2SD0661A (2SD661A) Parameter Symbol Collector to 2SB0745 base voltage 2SB0745A Collector to	Original	2SB0745, 2SB0745A 2SB745, 2SB745A) 2SD0661 2SD661) 2SD0661A 2SD661A) 2SB0745 2SD661 TRANSISTOR PNP riaa 2SB0745 2SB0745A 2SB745 2SB745A 2SD0661 2SD661 2SD661A	PDF
NSB4904DW1T1G Abstract: NSB4904DW1T2G "two TRANSISTORs" sot-363 pnp npn Text: NSB4904DW1T1G, NSB4904DW1T2G Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com 6 The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base	Original	NSB4904DW1T1G, NSB4904DW1T2G NSB4904DW1T1G NSB4904DW1T2G, SC-88/SOT-363 NSB4904DW1T1G/D NSB4904DW1T2G "two TRANSISTORs" sot-363 pnp npn	PDF
419B-02 Abstract: NSB4904DW1T1G NSB4904DW1T2G RESISTOR footprint Text: NSB4904DW1T1G, NSB4904DW1T2G Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http://onsemi.com 6 The Bias Resistor Transistor BRT contains a single transistor with a monolithic bias network consisting of two resistors; a series base	Original	NSB4904DW1T1G, NSB4904DW1T2G NSB4904DW1T1G NSB4904DW1T2G, SC-88/SOT-363 NSB4904DW1T1G/D 419B-02 NSB4904DW1T2G RESISTOR footprint	PDF
BSX29 Abstract: "pnp switch" Text: SILICON PLANAR PNP SWITCH A N D RF A M P L IF IE R The B S X 29 is a silicon planar epitaxial PN P transistor in Jedec T O - 18 metal case. It is designed for saturated and nonsaturated switching circuits requiring up to 2 0 0 m A of collec tor current.	OCR Scan	BSX29 BSX29 300/Us, "pnp switch"	PDF

187 TRANSISTOR PNP Search Results

187 TRANSISTOR PNP Result Highlights (5)

187 TRANSISTOR PNP Datasheets Context Search

Transistor AC 188

Untitled

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187 TRANSISTOR PNP

2SA1036K L T146

power transistor vce 600 volt

MICROPROCESSOR Z80

TR0022B

BD81010

bt39

transistor d 188

Untitled

IFRZ44

2SB1516F

Untitled

rjl ce

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TL 187 TRANSISTOR PNP

2SD661 TRANSISTOR PNP

NSB4904DW1T1G

419B-02

BSX29