Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    1880 LM Search Results

    1880 LM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SK1880STL-E Renesas Electronics Corporation Nch Mosfet For Switching Visit Renesas Electronics Corporation
    10118807-003LF Amphenol Communications Solutions HPCE VERT REC 48P12S Visit Amphenol Communications Solutions
    65188-001LF Amphenol Communications Solutions Din Accessory, Backplane Connectors, Latching Frame 3x32 Visit Amphenol Communications Solutions
    RJE021880310 Amphenol Communications Solutions Modular Jack - Right Angle, Input Output Connectors 8P8C, Shield. Visit Amphenol Communications Solutions
    RJE031880310 Amphenol Communications Solutions Modular Jack - Right Angle, Input Output Connectors 8P8C, Without Shield, Without Panel Stop. Visit Amphenol Communications Solutions
    SF Impression Pixel

    1880 LM Price and Stock

    Bivar Inc ELM 1-880

    LED Mounting Hardware LED Mount Self Ret 5mm Black .880 inch
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics ELM 1-880
    • 1 $0.33
    • 10 $0.221
    • 100 $0.156
    • 1000 $0.097
    • 10000 $0.094
    		Get Quote

    Pulse Electronics Corporation BPF1608LM02R1880A

    Signal Conditioning 1608 1.88GHz BPF Type02,
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics BPF1608LM02R1880A
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.061
    		Get Quote

    Pulse Electronics Corporation LPF1005LM53R1880A

    Signal Conditioning 1005 1880MHz LPF, Type53
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics LPF1005LM53R1880A
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.054
    		Get Quote

    1880 LM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PTFA181001GL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 100 W, 1805 – 1880 MHz Description The PTFA181001GL is a 100-watt LDMOS FET designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz


    Original     		PDF PTFA181001GL PTFA181001GL 100-watt PG-63248-2 PTFA181001HL PG-64248-2

    10 ohms potentiometer

    Abstract: 08051J100GBTTR BCP56 LM7805 PTFA182001E RO4350
    Text: PTFA182001E Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 – 1880 MHz Description The PTFA182001E is a 200-watt LDMOS FET intended for EDGE applications from 1805 to 1880 MHz. Features include input and output


    Original     		PDF PTFA182001E PTFA182001E 200-watt 10 ohms potentiometer 08051J100GBTTR BCP56 LM7805 RO4350

    d683

    Abstract: elna 50v BCP56 LM7805 PTFA181001GL
    Text: PTFA181001GL Use GL only Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 100 W, 1805 – 1880 MHz Description The PTFA181001GL is a 100-watt LDMOS FET designed for EDGE and WCDMA power amplifier applications in the 1805 to 1880 MHz


    Original     		PDF PTFA181001GL PTFA181001GL 100-watt d683 elna 50v BCP56 LM7805

    PTFB182503FL

    Abstract: TRANSISTOR tl131 LM78L05ACM-ND LM78L05ACMND tl136 PTFB182503 ER805 tl1182 ptfb182503el tl239
    Text: PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input


    Original     		PDF PTFB182503EL PTFB182503FL 240-watt H-33288-6 H-34288-4/2 TRANSISTOR tl131 LM78L05ACM-ND LM78L05ACMND tl136 PTFB182503 ER805 tl1182 tl239

    Untitled

    Abstract: No abstract text available
    Text: PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input


    Original     		PDF PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6 H-34288-4/2

    Untitled

    Abstract: No abstract text available
    Text: PTFB182503EL PTFB182503FL Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications in the 1805 to 1880 MHz frequency band. Features include input


    Original     		PDF PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6 H-34288-4/2

    a1807

    Abstract: LM7805 PTFA180701E PTFA180701F RO4350 BCP56
    Text: PTFA180701E PTFA180701F Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 – 1880 MHz Description The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed for GSM and GSM EDGE power amplifier applications in the 1805 MHz to 1880 MHz band. Features include input and output matching, and thermallyenhanced packages with slotted or earless flanges. Manufactured with


    Original     		PDF PTFA180701E PTFA180701F PTFA180701E PTFA180701F 70-watt H-36265-2 H-37265-2 a1807 LM7805 RO4350 BCP56

    Untitled

    Abstract: No abstract text available
    Text: PTFB183408SV High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to 1880 MHz frequency band. Features include input and output matching, high gain and thermally-enhanced package with earless flange.


    Original     		PDF PTFB183408SV PTFB183408SV 340-watt

    a1807

    Abstract: PTFA180701E PTF180701E A3563 1800 ldmos BCP56 LM7805 PTFA180701F RO4350 H-36265-2
    Text: PTFA180701E PTFA180701F Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 – 1880 MHz Description The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed for GSM and GSM EDGE power amplifier applications in the 1805 MHz to 1880 MHz band. Features include input and output matching, and thermallyenhanced packages with slotted or earless flanges. Manufactured with


    Original     		PDF PTFA180701E PTFA180701F PTFA180701E PTFA180701F 70-watt H-36265-2 H-37265-2 a1807 PTF180701E A3563 1800 ldmos BCP56 LM7805 RO4350 H-36265-2

    Untitled

    Abstract: No abstract text available
    Text: PTFA180701E PTFA180701F Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 – 1880 MHz Description The PTFA180701E and PTFA180701F are 70-watt LDMOS FETs designed for GSM and GSM EDGE power amplifier applications in the 1805 MHz to 1880 MHz band. Features include input and output matching, and thermallyenhanced packages with slotted or earless flanges. Manufactured with


    Original     		PDF PTFA180701E PTFA180701F PTFA180701E PTFA180701F 70-watt H-36265-2 H-37265-2

    TL172

    Abstract: TL170
    Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power ampliier applications


    Original     		PDF PTFB183404E PTFB183404F PTFB183404E PTFB183404F 340-watt H-37275-6/2 TL172 TL170

    tl249

    Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242
    Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier


    Original     		PDF PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt H-33288-6, H-34288-6, tl249 tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 tl250 TL242

    atc200b104kw50

    Abstract: TL170 TL235 TL138 TL140 tl239 Tl141 TL163 tl172 tl147
    Text: PTFB183404F Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 340 W, 1805 – 1880 MHz Description The PTFB183404F is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PDF PTFB183404F PTFB183404F 340-watt atc200b104kw50 TL170 TL235 TL138 TL140 tl239 Tl141 TL163 tl172 tl147

    Untitled

    Abstract: No abstract text available
    Text: PTFA181001E PTFA181001F Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001E and PTFA181001F are 100-watt, internallymatched GOLDMOS FETs intended for EDGE and WCDMA applications in the DCS band. Full gold metallization ensures


    Original     		PDF PTFA181001E PTFA181001F 100-watt, H-30248-2 H-31248-2 1880dangerous

    a1807

    Abstract: BCP56 LM7805 PTFA180701E PTFA180701F RO4350 PTF180701E
    Text: PTFA180701E PTFA180701F Thermally-Enhanced High Power RF LDMOS FETs 70 W, 1805 – 1880 MHz Description PTFA180701E Package H-30265-2 The PTFA180701E and PTFA180701F are thermally-enhanced, 70-watt, internally-matched GOLDMOS FETs intended for EDGE applications in


    Original     		PDF PTFA180701E PTFA180701F H-30265-2 PTFA180701E PTFA180701F 70-watt, H-31265-2 a1807 BCP56 LM7805 RO4350 PTF180701E

    TRANSISTOR tl131

    Abstract: ptfb192503 tl134 TL105B PTFB182503FL TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117
    Text: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


    Original     		PDF PTFB182503EL PTFB182503FL PTFB182503EL PTFB182503FL 240-watt TRANSISTOR tl131 ptfb192503 tl134 TL105B TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117

    TL139

    Abstract: TL205 PTFB183404 ptfb183404f transistor TL131
    Text: PTFB183404E PTFB183404F Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistors 340 W, 1805 – 1880 MHz Description The PTFB183404E and PTFB183404F are 340-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications


    Original     		PDF PTFB183404E PTFB183404F PTFB183404F 340-watt H-36275-8 H-37275-6/2 TL139 TL205 PTFB183404 transistor TL131

    SM4W103-ND

    Abstract: diode t25 4 j6 sot23 theta jc value SM4W-5 SM4W502-ND potentiometer 10kohms
    Text: PRELIMINARY PFM18030 SPECIFICATION 1805-1880 MHz, 30W, 2-Stage Power Module Enhancement-Mode Lateral MOSFETs This versatile DCS module provides excellent linearity and efficiency in a low-cost surface mount package. The PFM18030SM includes two stages Package Type: Surface Mount


    Original     		PDF PFM18030 PFM18030SM SM4W103-ND diode t25 4 j6 sot23 theta jc value SM4W-5 SM4W502-ND potentiometer 10kohms

    LM7805

    Abstract: elna 50v, 1uF LM7805 voltage regulator d 1879 TRANSISTOR BCP56 PTFA181001GL ELNA capacitor 100 uf 50v
    Text: Preliminary PTFA181001GL PTFA181001HL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 100 W, 1805 – 1880 MHz Description The PTFA181001GL and PTFA181001GL are 100-watt LDMOS FETs designed for EDGE and WCDMA power amplifier applications in the


    Original     		PDF PTFA181001GL PTFA181001HL PTFA181001GL 100-watt LM7805 elna 50v, 1uF LM7805 voltage regulator d 1879 TRANSISTOR BCP56 ELNA capacitor 100 uf 50v

    TL107 linear

    Abstract: TRANSISTOR tl131
    Text: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET speciically designed for use in Doherty cellular power ampliier applications in the 1805


    Original     		PDF PTFB182557SH PTFB182557SH 250-watt H-34288G-4/2 TL107 linear TRANSISTOR tl131

    Untitled

    Abstract: No abstract text available
    Text: User's Guide SNVA358B – August 2008 – Revised May 2013 AN-1880 LM2854 1MHz Buck Regulator Demo Board 1 Introduction The LM2854 PowerWise SIMPLE SWITCHER buck regulator demonstration board is a 1 MHz stepdown voltage regulator capable of driving 0A up to 4A load current with excellent power conversion


    Original     		PDF SNVA358B AN-1880 LM2854

    Untitled

    Abstract: No abstract text available
    Text: PTFB183408SV Confidential, Limited Internal Distribution High Power RF LDMOS Field Effect Transistor 340 W, 30 V, 1805 – 1880 MHz Description The PTFB183408SV is a 340-watt LDMOS FET intended for use in multi-standard cellular power amplifier applications in the 1805 to


    Original     		PDF PTFB183408SV PTFB183408SV 340-watt

    Untitled

    Abstract: No abstract text available
    Text: PTFB182557SH Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 250 W, 28 V, 1805 – 1880 MHz Description The PTFB182557SH is a 250-watt LDMOS FET specifically designed for use in Doherty cellular power amplifier applications in the 1805


    Original     		PDF PTFB182557SH PTFB182557SH 250-watt

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED FREQUENCY SYNTHESIZERS ! New FRACTIONAL-N FREQUENCY RANGE STEP SIZE MHz (KHz) 824 - 894 870 - 960 900 - 1300 950 - 1700 1470 - 2070 1710 - 1880 1850 - 1990 2040 - 2540 197 DC BIAS REQUIREMENTS Vcc1 & 2 (Volts) 30 50 50 100 25 50 50 100 +5/+12


    Original     		PDF KHz/100 -20oC LMX2350